Skyworks Solutions Inc. SI8230BB-B-ISR

Overview

SI8230BB-B-ISR from Silicon Labs is a 0.5 A peak-output, high-side/low-side isolated gate driver in a 16-pin wide-body SOIC package with 5 kVRMS input-to-output isolation, 60 ns max propagation delay, and programmable dead time. It supports motor control inverters and isolated DC-DC power supplies requiring reinforced insulation per UL1577, VDE 0884-5, and IEC 60950-1.

For engineers reviewing the SI8230BB-B-ISR datasheet, SI8230BB-B-ISR pinout, SI8230BB-B-ISR application, or SI8230BB-B-ISR equivalent, this page delivers verified electrical specs, safety-certified isolation parameters, HS/LS logic operation details, and real-world design guidance for IGBT/MOSFET gate drive in industrial and automotive power systems.

Technical Context

The SI8230BB-B-ISR implements RF-based on/off keying across a silicon isolation barrier, enabling robust noise immunity without startup initialization. Its dual-channel architecture features independent TTL-compatible inputs (VIA/VIB) with >400 mV hysteresis and overlap protection logic that enforces minimum dead time to prevent shoot-through in half-bridge configurations.

It operates with input supply VDDI = 4.5–5.5 V and driver supplies VDDA/VDDB = 6.5–24 V, includes undervoltage lockout (UVLO) thresholds of 3.6 V (rising) and 3.3 V (falling) on VDDI, and supports programmable dead time via external resistor (RDT) with values from 70 ns to 900 ns.

Key Specifications

Pinout & Package

SI8230BB-B-ISR uses a 16-pin wide-body SOIC (WBSOIC-16) package with 1.27 mm pitch, 10.3 mm body width, and 8.0 mm minimum creepage/clearance. Pin 1 is marked with a dot; pins 1–8 form the input side, pins 9–16 the output side, with internal isolation barrier between them.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.

Compared with Si8230BD-B-ISR, SI8230BB-B-ISR offers higher 5 kVRMS isolation for mains-referenced systems, while UCC21520DWR provides greater 4 A drive capability and Miller clamping-making SI8230BB-B-ISR optimal for cost-sensitive, thermally constrained 0.5 A IGBT/MOSFET applications requiring full reinforced insulation.

Availability

SI8230BB-B-ISR is available at Aetrix Electronics and suitable for motor control inverters, isolated DC-DC power supplies, and solar microinverters requiring stable component supply, long-term lifecycle support, and certified reinforced insulation.

Supply support for SI8230BB-B-ISR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Silicon Labs is a fabless semiconductor company specializing in precision timing, isolation, and mixed-signal ICs for industrial, automotive, and communications infrastructure.

The Si823x product line delivers high-speed, high-CMTI isolated gate drivers using proprietary silicon isolation technology-designed specifically for reliable, compact, and safety-certified gate drive in power conversion systems.

FAQ

What is the maximum operating frequency supported by the SI8230BB-B-ISR?

The SI8230BB-B-ISR supports up to 8 MHz switching frequency, enabled by its ≤60 ns propagation delay and <5.6 ns pulse width distortion. This allows precise timing control in high-frequency resonant LLC and ZVS topologies where nanosecond-level synchronization between high-side and low-side gate signals is critical for efficiency and EMI reduction. The SI8230BB-B-ISR maintains this performance across –40 °C to +125 °C.

Does the SI8230BB-B-ISR require external components for basic operation?

Yes, the SI8230BB-B-ISR requires external decoupling capacitors on VDDI, VDDA, and VDDB (typically 1 µF ceramic + 10–100 µF bulk), plus a pull-up resistor on DISABLE if not actively driven. For programmable dead time, an external RDT resistor (6 kΩ–220 kΩ) is needed on the DT pin. No external bootstrap diodes or level shifters are required-the SI8230BB-B-ISR integrates full isolation and level translation internally.

How does the overlap protection function in the SI8230BB-B-ISR?

The SI8230BB-B-ISR implements hardware-based overlap protection that enforces a minimum dead time (TDD ≈ 0.4 ns) between VOA and VOB transitions, regardless of input timing. When both VIA and VIB go high simultaneously, the internal logic delays one output transition to prevent shoot-through-even during input glitches or MCU timing errors. This feature is intrinsic to the Si8230BB-B-ISR's architecture and requires no configuration.

Can the SI8230BB-B-ISR drive SiC MOSFETs?

The SI8230BB-B-ISR can drive low-to-medium gate charge SiC MOSFETs (Qg < 30 nC) at moderate switching frequencies (<500 kHz), given its 0.5 A peak output and 12 ns rise/fall times (CL = 200 pF). However, for high-speed SiC applications requiring >1 A peak drive or active Miller clamping, a higher-current driver like the UCC21520DWR is recommended. The SI8230BB-B-ISR remains suitable for cost-optimized SiC gate drive where thermal and layout constraints favor its small footprint and integrated isolation.

What safety certifications apply to the SI8230BB-B-ISR?

The SI8230BB-B-ISR holds UL 1577 recognition (5000 Vrms, 1 min), VDE certification to IEC 60747-5-5 and EN 60950-1 (reinforced insulation), CSA Component Acceptance Notice 5A (IEC 60950-1/61010-1/60601-1), and CQC GB4943.1 approval. These certifications validate its 5 kVRMS isolation, 8.0 mm creepage/clearance, and 600 VRMS reinforced working voltage-making it suitable for industrial, medical, and grid-tied power equipment.