Skyworks Solutions Inc. SI8230BC-D-IS1R

Overview

SI8230BC-D-IS1R from Skyworks Solutions is a high-side/low-side isolated gate driver IC with 0.5 A peak output current, 3.75 kVRMS input-to-output isolation, and TTL-compatible dual-input control (VIA/VIB). It integrates programmable dead time and overlap protection, operates up to 8 MHz, and supports 4.5–24 V supply voltage - designed for half-bridge MOSFET/IGBT drive in industrial inverters and motor control.

For engineers reviewing the SI8230BC-D-IS1R datasheet, SI8230BC-D-IS1R pinout, SI8230BC-D-IS1R application, or SI8230BC-D-IS1R equivalent, this page delivers verified specifications, SOIC-16 narrow-body package details, functional truth table behavior, UVLO thresholds, and real-world design implications for isolated gate drive reliability and timing control.

Technical Context

The SI8230BC-D-IS1R implements RF-based silicon isolation with a semiconductor barrier, enabling 45 ns typical propagation delay and robust immunity to magnetic fields and EMI. Its two independent isolated channels support high-side and low-side switching with internal dead-time programming via external resistor (R_DT) and automatic overlap recovery logic.

It features separate undervoltage lockout (UVLO) monitors on input (VDDI), high-side (VDDA), and low-side (VDDB) supplies - each with 8 V turn-on and 7.2 V turn-off hysteresis - ensuring safe default-low outputs during power sequencing or brownout conditions.

Key Specifications

Pinout & Package

SI8230BC-D-IS1R uses a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width, 10.3 mm length, 2.35 mm height) with 1.27 mm pitch and creepage ≥5.5 mm - optimized for space-constrained PCB layouts in power modules and EV auxiliary converters.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.

Compared with Si8230BD-D-IS1R, SI8230BC-D-IS1R trades 1.25 kVRMS isolation margin for tighter cost and footprint in non-mains-referenced systems; versus UCC21520DWR, it delivers lower propagation delay and built-in dead-time control at half the gate drive strength - making it optimal for cost-sensitive, timing-critical 0.5 A industrial half-bridges.

Availability

SI8230BC-D-IS1R is available at Aetrix Electronics and suitable for industrial inverters, solar MPPT converters, and motor control systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for SI8230BC-D-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and timing technologies for high-reliability applications.

The Si823x family was engineered specifically for isolated gate driving in power conversion systems - emphasizing low propagation delay, programmable safety features, and robustness across automotive and industrial temperature ranges.

FAQ

What is the isolation voltage rating of SI8230BC-D-IS1R and which safety standards does it meet?

The SI8230BC-D-IS1R provides 3.75 kVRMS input-to-output isolation per UL1577. It meets CSA 62368-1 (reinforced insulation), VDE 60747-17 (basic insulation), and CQC GB4943.1 (reinforced insulation) requirements. This rating supports use in 300–600 VDC bus applications where reinforced insulation is required but full 5.0 kVRMS is not mandated - such as auxiliary power supplies and non-mains-referenced inverters.

Does SI8230BC-D-IS1R support programmable dead time, and how is it configured?

Yes, SI8230BC-D-IS1R supports programmable dead time via its DT pin. A resistor (R_DT) connected from DT to ground sets dead time from 0 to 1000 ns using DT = 10 × R_DT (R_DT in kΩ). A 0.1 µF ceramic capacitor must be placed adjacent to the DT pin for noise immunity. The feature is active only in high-side/low-side configurations like SI8230BC-D-IS1R - not in dual-driver variants.

What are the UVLO thresholds for SI8230BC-D-IS1R, and how do they affect system startup?

SI8230BC-D-IS1R has independent UVLO monitors: VDDI, VDDA, and VDDB each trigger at 8 V (turn-on) and 7.2 V (turn-off). During startup, outputs VOA and VOB remain low until all three supplies exceed 8 V for t_START ≥ 10 µs. This prevents partial powering and ensures deterministic gate behavior - critical for reliable half-bridge initialization in motor drives and inverters.

Can SI8230BC-D-IS1R drive SiC MOSFETs, and what gate resistance is recommended?

Yes, SI8230BC-D-IS1R can drive common 650 V SiC MOSFETs (e.g., C3M0065090D) at ≤100 kHz with appropriate gate resistors. For 12 nC Q_g, a 5–10 Ω series resistor on VOA/VOB limits dV/dt and ringing while maintaining <45 ns edge times. Layout best practices - short traces, local 100 nF ceramic decoupling at VDDA/VDDB, and Kelvin-source connections - are essential for stable SiC switching.

Is there an automotive-grade version of SI8230BC-D-IS1R, and what qualifications does it hold?

Yes, the automotive-grade equivalent is SI8230BC-AS1R. It is AEC-Q100 qualified (Grade 1, –40 °C to +125 °C), manufactured with automotive-specific process flows, and supported with AIAG-compliant PPAP documentation, IMDS, and CAMDS listings. Electrical specs, pinout, and package are identical to SI8230BC-D-IS1R - enabling drop-in qualification for EV onboard chargers and traction inverter auxiliary stages.