Skyworks Solutions Inc. SI8230BD-D-IS3R

Overview

SI8230BD-D-IS3R from Skyworks Solutions is a high-side/low-side isolated gate driver IC with 0.5 A peak output current, 5 kVRMS input-to-output isolation, and TTL-compatible dual inputs (VIA/VIB). It integrates programmable dead time and overlap protection for half-bridge MOSFET/IGBT control in industrial inverters and motor drives.

For engineers reviewing the SI8230BD-D-IS3R datasheet, SI8230BD-D-IS3R pinout, SI8230BD-D-IS3R application, or SI8230BD-D-IS3R equivalent, this page delivers verified specifications, SOIC-14 wide-body package details, automotive-grade compatibility notes, and real-world design context for isolated gate drive selection.

Technical Context

The SI8230BD-D-IS3R implements RF-based silicon isolation with a semiconductor barrier, enabling 45 ns typical propagation delay and immunity to magnetic fields-distinct from optocoupler-based drivers. Its two independent isolated channels support high-side and low-side switching with shared input-side logic and separate output-side supplies (VDDA/VDDB).

It features integrated undervoltage lockout (UVLO) on all power domains (VDDI, VDDA, VDDB), programmable dead time via external resistor (DT pin), and overlap protection that forces both outputs low during simultaneous high input states. Input hysteresis exceeds 400 mV for noise robustness in noisy power environments.

Key Specifications

Pinout & Package

SI8230BD-D-IS3R uses a RoHS-compliant SOIC-14 wide-body package (10.3 mm × 7.5 mm, 2.35 mm height) with 0.635 mm pitch and enhanced creepage for 5 kVRMS isolation compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.

Compared with SI8230BD-D-IS3R, Si8230BD-D-IS offers identical functionality in a larger SOIC-16 footprint, while UCC21520DWR trades dual-input flexibility and programmable DT for higher drive strength - making SI8230BD-D-IS3R optimal for compact, dual-control, shoot-through-critical designs.

Availability

SI8230BD-D-IS3R is available at Aetrix Electronics and suitable for industrial inverters, motor control systems, and isolated dc-dc power supplies requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability options.

Supply support for SI8230BD-D-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.

The Si823x family was engineered specifically for high-reliability isolated gate drive in power conversion systems - emphasizing low propagation delay, robust CMTI, and integrated safety features like overlap protection and multi-rail UVLO.

FAQ

What is the maximum switching frequency supported by the SI8230BD-D-IS3R?

The SI8230BD-D-IS3R supports up to 8 MHz switching frequency, enabled by its 45 ns typical propagation delay and fast rise/fall times (<10 ns with 100 pF load). This makes SI8230BD-D-IS3R suitable for high-frequency resonant converters and GaN/SiC-based topologies where timing precision is critical.

Does the SI8230BD-D-IS3R require external components for basic operation?

Yes - SI8230BD-D-IS3R requires external bypass capacitors on VDDI, VDDA, and VDDB (typically 0.1 µF ceramic each), plus a pull-down resistor on the DISABLE pin if not actively driven. For programmable dead time, a resistor (RDT) from DT to GND is needed; a 0.1 µF capacitor in parallel improves noise immunity.

Can the SI8230BD-D-IS3R drive SiC MOSFETs directly?

SI8230BD-D-IS3R can drive low-to-medium gate charge SiC MOSFETs (≤25 nC) at moderate switching frequencies (<500 kHz), given its 0.5 A peak output and 5 V minimum gate drive swing. For high-dV/dt SiC applications, verify layout parasitics and consider gate resistors to manage ringing - SI8230BD-D-IS3R itself remains fully compatible.

How does the SI8230BD-D-IS3R handle undervoltage conditions on VDDA or VDDB?

SI8230BD-D-IS3R implements independent UVLO on VDDA and VDDB: if either falls below 7.5 V (–0.5 V hysteresis), its corresponding output (VOA or VOB) is forced low. This ensures safe turn-off of the associated switch even if only one supply fails - a key reliability feature confirmed in SI8230BD-D-IS3R's functional safety behavior.

Is the SI8230BD-D-IS3R pin-compatible with other Si823x variants?

SI8230BD-D-IS3R is pin-compatible with all Si823x SOIC-14 wide-body variants (e.g., SI8230AD-D-IS3, SI8233BD-D-IS3), sharing identical pinout, footprint, and thermal pad configuration. Electrical differences (e.g., UVLO threshold, peak current) do not affect mechanical or routing compatibility - enabling drop-in replacement within the same package family.