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Skyworks Solutions Inc. SI8231AB-B-IS1R
- Part No.:
- SI8231AB-B-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8231AB-B-IS1R.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,317
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Product details
Overview
SI8231AB-B-IS1R from Silicon Labs is a 0.5 A peak-output, high-side/low-side isolated gate driver with PWM input configuration, 5 kVRMS isolation (wide-body SOIC-16), 60 ns max propagation delay, and programmable dead time. It drives MOSFETs/IGBTs in half-bridge topologies for solar inverters and motor control systems.
For engineers reviewing the SI8231AB-B-IS1R datasheet, SI8231AB-B-IS1R pinout, SI8231AB-B-IS1R application, or SI8231AB-B-IS1R equivalent, key selection criteria include its PWM-input architecture, overlap protection, 400 mV input hysteresis, –40 to +125 °C operating range, and UL/VDE/CSA safety certifications.
Technical Context
The SI8231AB-B-IS1R implements RF-based on/off keying across a silicon isolation barrier, enabling robust noise immunity without startup initialization. Its dual-channel architecture features independent isolated power domains (VDDI, VDDA, VDDB) and integrated dead-time control via external resistor (RDT).
It supports TTL-compatible PWM input with >400 mV hysteresis, provides overlap protection to prevent shoot-through, and delivers 0.5 A peak sink/source current per channel with 12 ns typical rise/fall time (CL = 200 pF). Common-mode transient immunity exceeds 45 kV/µs at 1500 VCM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Voltage | 5 kVRMS (UL 1577), tested to 6.0 kVRMS for 1 sec - enables reinforced insulation in industrial mains-connected systems |
| Peak Output Current | 0.5 A sink / 0.25 A source - sufficient to drive medium-power MOSFET gates (e.g., QG ≤ 25 nC) at ≤8 MHz switching |
| Propagation Delay | 30–60 ns (max) - ensures precise timing alignment between HS/LS channels for tight dead-time control |
| Input Hysteresis | 400–450 mV - rejects noise on PWM signal lines in electrically noisy motor/inverter environments |
| Operating Temperature | –40 to +125 °C - supports under-hood automotive and industrial ambient conditions without derating |
| CMTI | ≥45 kV/µs - maintains signal integrity during fast dv/dt transients in SiC/GaN-based power stages |
| UVLO Thresholds | VDDI: 3.3–4.45 V (hysteresis 250 mV); VDDA/VDDB: 5.2–14.8 V selectable - prevents erratic operation during brownout |
Pinout & Package
SI8231AB-B-IS1R is housed in a RoHS-compliant wide-body SOIC-16 package (10.3 mm × 10.3 mm, 2.65 mm height) with 8.0 mm creepage/clearance, certified for 5 kVRMS isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 | Input-side ground & supply | Pins 1–7 form input-side GNDI/VDDI network; Pin 8 is DISABLE - enables global shutdown of both outputs |
| 9, 10 | High-side output | VOA and GNDA - drive high-side switch gate with referenced ground; supports floating or grounded configurations |
| 11, 12 | Low-side output | VOB and GNDB - drive low-side switch gate with separate or shared ground; differential voltage up to 1500 VDC |
| 13, 14, 15, 16 | Driver-side supplies | VDDA (13), VDDB (15), GNDA (10), GNDB (12) - isolated 6.5–24 V supplies per channel; decoupling required at each VDD pin |
Key Features
| Feature | Design Value |
|---|---|
| PWM-input architecture | Single PWM input controls complementary HS/LS outputs with built-in overlap protection - eliminates need for external logic or dead-time generators |
| Programmable dead time | Adjustable 70–900 ns via external RDT resistor (6–100 kΩ) - enables fine-tuning for specific MOSFET/QG combinations |
| RF isolation technology | Silicon Labs' proprietary barrier replaces optocouplers - delivers 60 ns propagation vs. >100 ns typical for opto-based drivers |
| AEC-Q100 qualified | Qualified to Grade 1 (–40 to +125 °C) - validated for automotive powertrain and onboard charger applications |
| Reinforced insulation | UL/VDE/CSA/CQC certified for 600 VRMS working voltage - meets IEC 60950-1, 61010-1, and 60601-1 safety standards |
Applications
| Solar Inverters | Industrial Motor Drives |
|---|---|
Use Scenario: Half-bridge IGBT gate driving in string inverters with 600–1000 V DC bus. IC Role / Device Role / Timing Role: Isolated PWM-to-complementary gate driver with programmable dead time and shoot-through prevention. Use Value: Enables reliable 16–20 kHz switching with <60 ns channel matching, reducing conduction losses and EMI. | Use Scenario: Three-phase inverter stage in HVAC compressors and servo drives. IC Role / Device Role / Timing Role: High-side/low-side gate driver with CMTI >45 kV/µs for noisy factory-floor environments. Use Value: Maintains accurate timing under 1000 V/µs bus transients, preventing false turn-on and device failure. |
| Onboard EV Chargers | UPS Systems |
Use Scenario: AC/DC PFC and DC/DC isolation stages in bidirectional OBCs. IC Role / Device Role / Timing Role: Isolated gate driver for SiC MOSFETs in totem-pole PFC and CLLC resonant converters. Use Value: Supports 100+ kHz operation with 12 ns rise/fall time and 0.5 A drive strength for low-Qg SiC devices. | Use Scenario: Double-conversion UPS with IGBT-based inverter stage and battery charging circuitry. IC Role / Device Role / Timing Role: Safety-certified isolated driver for high-voltage DC bus switching and battery isolation. Use Value: 5 kVRMS isolation and reinforced insulation meet UL 1778 and IEC 62040-1 requirements for datacenter UPS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8231AD-B-IS1R | Different UVLO threshold (12.5 V vs. 5 V on VDDA/VDDB); same pinout and PWM-input function | Targeted at higher-bus designs (e.g., 800 V DC link) requiring tighter VDDA undervoltage lockout | Select when system VDDA rail operates near 15 V and requires 12.5 V UVLO trip point |
| UCC21520DW | Ti's dual-channel 4-A isolated driver with split-output architecture; no programmable dead time; 3.75 kVRMS isolation | Lacks integrated overlap protection and dead-time programming; requires external logic for complementary control | Choose when higher peak current (4 A) is needed for large IGBTs, and dead-time control is handled externally |
Compared with Si8231AD-B-IS1R and UCC21520DW, the SI8231AB-B-IS1R uniquely combines PWM-input simplicity, on-chip overlap protection, and 5 kVRMS isolation in a single wide-body SOIC-16 package - reducing BOM count and layout complexity for cost-sensitive solar and industrial inverters.
Availability
SI8231AB-B-IS1R is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, and onboard EV chargers requiring stable component supply, long-term lifecycle support, and full regulatory compliance documentation.
Supply support for SI8231AB-B-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Silicon Labs is a fabless semiconductor company specializing in precision timing, isolation, and mixed-signal ICs for industrial, automotive, and communications markets.
The Si823x product line delivers isolated gate drivers optimized for high-reliability power conversion systems, emphasizing safety certification, noise immunity, and integration to replace optocoupler-based solutions.
FAQ
What is the isolation rating and safety certification status of the SI8231AB-B-IS1R?
The SI8231AB-B-IS1R is rated for 5 kVRMS input-to-output isolation (UL 1577), with production testing to 6.0 kVRMS for 1 second. It holds CSA Component Notice 5A, VDE IEC 60747-5-5, UL 1577, and CQC GB4943.1 certifications - confirming reinforced insulation for 600 VRMS working voltage in industrial and medical applications. These approvals apply specifically to the wide-body SOIC-16 package variant of the SI8231AB-B-IS1R.
Does the SI8231AB-B-IS1R support programmable dead time, and how is it configured?
Yes, the SI8231AB-B-IS1R supports programmable dead time via an external resistor (RDT) connected between the DT pin and VDDI. With RDT = 6 kΩ, dead time is ~70 ns; with RDT = 100 kΩ, it reaches ~900 ns. The SI8231AB-B-IS1R datasheet specifies a maximum RDT value of 220 kΩ. This feature allows precise tuning to match gate drive requirements of specific MOSFETs or IGBTs without external logic.
What is the input interface type of the SI8231AB-B-IS1R, and how does it differ from the Si8230 variants?
The SI8231AB-B-IS1R uses a single PWM input (pin 6), generating complementary high-side and low-side outputs with built-in overlap protection. In contrast, Si8230 variants accept two independent inputs (VIA and VIB) for direct HS/LS control. This PWM-input architecture simplifies controller interface and eliminates external XOR logic - a defining functional distinction confirmed in the Si823x family truth tables for the SI8231AB-B-IS1R.
What are the absolute maximum ratings for VDDA and VDDB on the SI8231AB-B-IS1R?
The SI8231AB-B-IS1R has an absolute maximum driver-side supply voltage rating of 30 V for both VDDA and VDDB. However, the recommended operating range is 6.5–24 V. The device includes undervoltage lockout (UVLO) with selectable thresholds (5 V, 8 V, 10 V, or 12.5 V) - the SI8231AB-B-IS1R is configured for 5 V UVLO on VDDA/VDDB, meaning outputs disable when either supply drops below 4.9–6.3 V (depending on hysteresis).
Can the SI8231AB-B-IS1R drive both N-channel and P-channel MOSFETs in high-side configuration?
The SI8231AB-B-IS1R is designed to drive N-channel MOSFETs in high-side configuration using bootstrapped or isolated DC/DC supplies - its VOA output is a low-side referenced driver (GNDA) capable of sinking 0.5 A and sourcing 0.25 A. It does not support direct P-channel high-side drive, as its architecture assumes N-channel topology with appropriate gate bias. The datasheet confirms this use case in Figure 41 (Half-Bridge Application) and Section 4.1 for the SI8231AB-B-IS1R.
SI8231AB-B-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 20kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 60ns, 60ns
- Pulse Width Distortion (Max):
- 5.6ns
- Rise / Fall Time (Typ):
- 20ns, 20ns (Max)
- Current - Output High, Low:
- 250mA, 500mA
- Current - Peak Output:
- 500mA
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 6.5V ~ 24V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
SI8231AB-B-IS1R FAQ
1.How can I place an order for SI8231AB-B-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8231AB-B-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8231AB-B-IS1R reliable?
The price and inventory of SI8231AB-B-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8231AB-B-IS1R is usually 5 days.
3.What payment methods are accepted for SI8231AB-B-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8231AB-B-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8231AB-B-IS1R?
SI8231AB-B-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8231AB-B-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8231AB-B-IS1R?
For technical support, including SI8231AB-B-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8231AB-B-IS1R requirements.
6.How does Aetrix verify that SI8231AB-B-IS1R is sourced from the original manufacturer or authorized distributors?
All SI8231AB-B-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8231AB-B-IS1R meets industry standards.
7.What is the process for return or replacement of SI8231AB-B-IS1R?
All SI8231AB-B-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8231AB-B-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8231AB-B-IS1R part is unused and in its original packaging.
Return procedure for SI8231AB-B-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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