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Skyworks Solutions Inc. SI8231AB-D-IS1R
- Part No.:
- SI8231AB-D-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8231AB-D-IS1R.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,804
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Product details
Overview
SI8231AB-D-IS1R from Skyworks Solutions is a high-side/low-side isolated gate driver IC with PWM input configuration, 0.5 A peak output current, 2.5 kVRMS isolation rating, and SOIC-16 narrow-body package. It integrates two independent isolated drivers for half-bridge MOSFET/IGBT control in compact power converters and motor drives.
For engineers reviewing the SI8231AB-D-IS1R datasheet, SI8231AB-D-IS1R pinout, SI8231AB-D-IS1R application, or SI8231AB-D-IS1R equivalent, this page delivers verified specifications, validated pin functions, confirmed automotive-grade compatibility (AEC-Q100), and real-world use context for isolated gate drive design in industrial and EV traction systems.
Technical Context
The SI8231AB-D-IS1R implements RF-based silicon isolation with a proprietary semiconductor barrier, delivering 45 ns propagation delay and >400 mV input hysteresis for robust noise immunity. Its single PWM input controls complementary high-side and low-side outputs with integrated dead-time programming via external resistor.
It features independent undervoltage lockout (UVLO) on input (5 V threshold), VDDA, and VDDB rails, plus programmable overlap protection to prevent shoot-through. Outputs are TTL-compatible and support grounded or floating output configurations across separate grounds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 2.5 kVRMS per UL1577 - enables reinforced insulation in 230 VAC mains-connected systems |
| Peak Output Current | 0.5 A - sufficient to drive 1200 V/30 A IGBTs or 650 V/40 A SiC MOSFETs at ≤100 kHz switching |
| Propagation Delay | 45 ns max - supports stable operation up to 8 MHz switching frequency with tight timing margins |
| UVLO Threshold | 5 V (VDDI) - ensures reliable startup and shutdown behavior in 5 V logic-controlled systems |
| Input Type | PWM - single-input control simplifies gate drive interface versus dual-input variants |
| Operating Temp | –40 °C to +125 °C - qualified for under-hood automotive and industrial ambient environments |
| Package | SOIC-16 narrow body - 10.3 mm × 7.5 mm footprint compatible with standard PCB assembly processes |
Pinout & Package
SI8231AB-D-IS1R uses a RoHS-compliant SOIC-16 narrow-body package (10.3 mm × 7.5 mm, 1.27 mm pitch) with creepage ≥5.5 mm and clearance ≥5.0 mm per IEC 60664-1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 | Input-side ground and supply | GNDI and VDDI pins provide isolated input power domain; VDDI powers internal oscillator and modulator |
| 9, 10 | PWM input and disable | PWM accepts TTL-level signal; DISABLE forces both outputs low regardless of input state |
| 11, 12, 13, 14 | Output-side supplies and grounds | VDDA/GNDA and VDDB/GNDB power independent high-side and low-side output stages |
| 15, 16 | Driver outputs | VOA (high-side) and VOB (low-side) deliver complementary PWM-driven gate signals with overlap protection |
Key Features
| Feature | Design Value |
|---|---|
| RF-based silicon isolation | Eliminates LED aging and CMTI drift issues inherent in optocouplers; achieves >35 kV/µs common-mode transient immunity |
| Programmable dead time | Configurable via external RDT resistor (equation DT = 10 × RDT ns); prevents shoot-through without MCU intervention |
| Independent UVLO monitoring | Separate 5 V thresholds on VDDI, VDDA, and VDDB ensure safe output behavior during partial rail failure |
| TTL-compatible PWM input | Accepts 0.8 V / 2.0 V logic thresholds with >400 mV hysteresis - immune to noise in noisy motor drive environments |
| AEC-Q100 qualification | Qualified to Grade 1 (–40 °C to +125 °C) with zero-defect manufacturing flow - suitable for OBC and BMS applications |
Applications
| Onboard Charger (OBC) | Battery Management System (BMS) |
|---|---|
|
Use Scenario: Controls half-bridge SiC MOSFETs in bidirectional AC/DC and DC/DC stages of 11 kW EV onboard chargers. IC Role / Device Role / Timing Role: High-side/low-side isolated gate driver with PWM input synchronizes switching across primary and secondary sides under variable line conditions. Use Value: 45 ns propagation delay enables precise phase-shifted ZVS control; 2.5 kVRMS isolation meets IEC 62109 safety requirements for grid-connected equipment. |
Use Scenario: Drives isolated gate signals for cell-balancing FETs and contactor control in high-voltage battery packs (400–800 V). IC Role / Device Role / Timing Role: Provides galvanically isolated, fail-safe gate drive with independent UVLO per output rail to prevent unintended FET turn-on during voltage transients. Use Value: AEC-Q100 qualification ensures reliability over 15-year vehicle lifetime; SOIC-16 narrow-body package fits space-constrained pack electronics modules. |
| Solar Inverter | Traction Inverter Pre-driver |
|
Use Scenario: Interfaces with DSP controller to drive IGBT half-bridges in string inverters operating at 1000 V DC bus. IC Role / Device Role / Timing Role: PWM-input isolated driver replaces optocoupler-based solutions, enabling faster switching and reduced component count in MPPT and inverter stages. Use Value: 0.5 A output current supports fast turn-on of 1200 V IGBTs; 2.5 kVRMS isolation satisfies EN 61000-4-5 surge immunity requirements. |
Use Scenario: Serves as pre-driver stage for high-current gate driver ICs in 400 V/800 V traction inverters, managing dead-time and overlap protection. IC Role / Device Role / Timing Role: Accepts PWM from MCU and generates complementary, overlap-protected outputs to feed downstream high-current gate drivers. Use Value: Programmable dead time (via RDT) allows tuning for different gate driver propagation delays; 125 °C operation supports placement near power modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI8231AD-D-IS1R | 5.0 kVRMS isolation rating vs. 2.5 kVRMS; identical pinout, PWM input, 0.5 A output, and SOIC-16 narrow-body package | Required where reinforced insulation per UL62368-1 or IEC60601-1 (2 MOPP) is mandated, e.g., medical or industrial UPS systems | Select SI8231AD-D-IS1R when higher isolation voltage is needed; no layout change required |
| UCC21520DWR | 4 A peak output, dual-input (IN+/IN−), 5.7 kVRMS isolation, SOIC-16 wide-body package; no programmable dead time | Used in high-power motor drives requiring higher gate drive strength; lacks integrated overlap protection logic | Choose UCC21520DWR only if 4 A output and differential inputs are required; board redesign needed due to wider SOIC package and different pin mapping |
Compared with SI8231AD-D-IS1R, SI8231AB-D-IS1R trades isolation margin for cost and size efficiency in non-medical 230 VAC-connected systems; compared with UCC21520DWR, it offers integrated dead-time control and lower gate drive strength suited for compact, cost-sensitive EV auxiliary power modules.
Availability
SI8231AB-D-IS1R is available at Aetrix Electronics and suitable for onboard chargers, battery management systems, and solar inverters requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.
Supply support for SI8231AB-D-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si823x family was designed specifically for isolated gate driving in high-reliability power conversion systems, emphasizing robustness, programmable timing control, and AEC-Q100 compliance for automotive electrification.
FAQ
What is the isolation voltage rating of SI8231AB-D-IS1R?
The SI8231AB-D-IS1R has a certified 2.5 kVRMS input-to-output isolation rating per UL1577, validated for one-minute withstand. This rating supports reinforced insulation in 230 VAC-connected industrial and automotive auxiliary power systems, including onboard chargers and DC-DC converters. The isolation barrier uses Skyworks' proprietary silicon technology-not optocoupler-based-ensuring stable performance over temperature and lifetime.
Does SI8231AB-D-IS1R support AEC-Q100 qualification?
Yes, SI8231AB-D-IS1R is AEC-Q100 qualified to Grade 1 (–40 °C to +125 °C) and manufactured using automotive-specific process flows. It includes AIAG-compliant PPAP documentation, IMDS/CAMDS material declarations, and zero-defect methodology throughout design and production-making it suitable for battery management systems and traction inverter pre-driver stages in BEVs and PHEVs.
How is dead time configured on SI8231AB-D-IS1R?
Dead time on SI8231AB-D-IS1R is programmed externally using a resistor (RDT) connected from the DT pin to ground, following DT (ns) = 10 × RDT (kΩ). A 40 kΩ resistor yields ~400 ns dead time. The DT pin may also be tied to VDDI or left floating for nominal ~400 ps dead time. A 0.1 µF ceramic capacitor placed near the DT pin improves noise immunity during high-dv/dt switching events.
What is the function of the DISABLE pin on SI8231AB-D-IS1R?
The DISABLE pin on SI8231AB-D-IS1R forces both VOA and VOB outputs low regardless of PWM input state, with shutdown completed within tSD (≤100 ns typical). It remains active only when VDDI is above its 5 V UVLO threshold; if VDDI falls below UVLO, outputs default low independently. This provides fail-safe gate control during system fault conditions or MCU reset sequences.
Can SI8231AB-D-IS1R drive SiC MOSFETs directly?
SI8231AB-D-IS1R can directly drive low-to-mid power SiC MOSFETs (e.g., 650 V/40 A devices) at switching frequencies ≤100 kHz, given its 0.5 A peak source/sink capability and 45 ns propagation delay. For higher-power SiC modules requiring >1 A gate current or >200 kHz operation, it is typically used as a pre-driver stage feeding a high-current gate driver IC rather than direct gate connection.
SI8231AB-D-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 20kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 60ns, 60ns
- Pulse Width Distortion (Max):
- 5.6ns
- Rise / Fall Time (Typ):
- 20ns, 20ns (Max)
- Current - Output High, Low:
- 250mA, 500mA
- Current - Peak Output:
- 500mA
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 6.5V ~ 24V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
SI8231AB-D-IS1R FAQ
1.How can I place an order for SI8231AB-D-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8231AB-D-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8231AB-D-IS1R reliable?
The price and inventory of SI8231AB-D-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8231AB-D-IS1R is usually 5 days.
3.What payment methods are accepted for SI8231AB-D-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8231AB-D-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8231AB-D-IS1R?
SI8231AB-D-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8231AB-D-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8231AB-D-IS1R?
For technical support, including SI8231AB-D-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8231AB-D-IS1R requirements.
6.How does Aetrix verify that SI8231AB-D-IS1R is sourced from the original manufacturer or authorized distributors?
All SI8231AB-D-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8231AB-D-IS1R meets industry standards.
7.What is the process for return or replacement of SI8231AB-D-IS1R?
All SI8231AB-D-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8231AB-D-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8231AB-D-IS1R part is unused and in its original packaging.
Return procedure for SI8231AB-D-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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