Skyworks Solutions Inc. SI8231AC-D-IS1R
- Part No.:
- SI8231AC-D-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8231AC-D-IS1R.pdf
- Description:
- DGT ISO 3.75KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
SI8231AC-D-IS1R from Skyworks Solutions is a high-side/low-side isolated gate driver IC with PWM input, 0.5 A peak output current, 3.75 kVRMS isolation rating, and 5 V undervoltage lockout (UVLO) threshold. It integrates two independent isolated channels using silicon-based RF isolation, enabling robust half-bridge MOSFET/IGBT drive in space-constrained industrial inverters and onboard chargers.
For engineers reviewing the SI8231AC-D-IS1R datasheet, SI8231AC-D-IS1R pinout, SI8231AC-D-IS1R application, or SI8231AC-D-IS1R equivalent, key selection criteria include its PWM-input architecture, programmable dead time support, automotive-grade qualification readiness, and SOIC-16 narrow-body package compatibility with 3.75 kVRMS reinforced insulation requirements.
Technical Context
The SI8231AC-D-IS1R implements a two-channel RF-modulated isolation architecture: one input die modulates an RF carrier via PWM signal, and two independent receiver dies decode and drive high-side (VOA) and low-side (VOB) outputs with overlap protection. Its internal dead time control uses an external resistor (RDT) to set delay from ~0 ns to >1 µs per Equation 1.
It features independent UVLO monitoring on VDDI (input side), VDDA (high-side supply), and VDDB (low-side supply), with all outputs forced low during any UVLO condition. The device operates across –40°C to +125°C and supports up to 8 MHz switching frequency with 45 ns typical propagation delay (L-H/H-L).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 3.75 kVRMS per UL1577 - enables reinforced insulation in 400 V AC mains-connected systems without additional creepage barriers |
| Peak Output Current | 0.5 A - sufficient to drive 1200 V SiC MOSFET gates with <100 ns turn-on in half-bridge topologies |
| UVLO Threshold | 5 V (VDDI) - ensures reliable startup only when controller logic rail is fully established |
| Propagation Delay | 45 ns max - supports precise timing alignment in high-frequency (>500 kHz) resonant LLC converters |
| Switching Frequency | Up to 8 MHz - allows direct PWM interface with modern digital controllers without external frequency limiting |
| Package | SOIC-16 narrow body - fits standard PCB footprints while maintaining 3.75 kVRMS clearance/creepage per IEC60664-1 |
| Operating Temp | –40°C to +125°C - qualified for under-hood automotive power stages and industrial motor drives |
Pinout & Package
SI8231AC-D-IS1R is housed in a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width), rated for 260 °C peak reflow per JEDEC J-STD-020. Creepage and clearance meet 3.75 kVRMS reinforced insulation requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Input-side supply | Powers internal RF transmitter and logic; must be ≥5 V to exit UVLO and enable output drive |
| GNDI | Input-side ground | Reference for PWM input and internal oscillator; galvanically isolated from output grounds |
| PWM | Single logic input | TTL-compatible (≥2.0 V high); controls complementary VOA/VOB states with built-in overlap protection |
| DISABLE | Global shutdown control | Active-high; forces both outputs low within tSD ≤ 100 ns, independent of VDDI state if powered |
| VDDA | High-side driver supply | Powers VOA output stage; UVLO triggers if <5 V, holding VOA low until recovery |
| GNDA | High-side ground reference | Return path for VOA; electrically isolated from GNDI and GNDB |
| VOA | High-side gate drive output | Sources/sinks 0.5 A peak; designed for bootstrap-fed high-side MOSFET gates up to 1500 V drain potential |
| VDDB | Low-side driver supply | Powers VOB output stage; independent UVLO monitoring prevents shoot-through during brownout |
| GNDB | Low-side ground reference | Return path for VOB; isolated from GNDA and GNDI to support floating low-side configurations |
| VOB | Low-side gate drive output | Complementary to VOA; sinks 0.5 A peak into standard N-channel MOSFET gates |
| DT | Dead time programming | Resistor-to-ground sets dead time (DT = 10 × RDT ns); floating or tied to VDDI yields ~400 ps nominal |
| NC | No connect | Pins 1, 9, 10, 15 - internally unused; must remain unconnected per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| PWM-input high-side/low-side configuration | Eliminates need for external logic inversion or dual PWM generation; reduces MCU GPIO count and PCB routing complexity |
| Programmable dead time with resistor control | Enables precise tuning of shoot-through prevention without firmware changes or layout redesign |
| Independent triple UVLO monitoring | Prevents unsafe operation during partial power loss - e.g., VDDA dropout while VDDI remains active |
| Silicon RF isolation barrier | Delivers 45 ns propagation delay and >100 kV/µs CMTI without LED aging or temperature drift issues of optocouplers |
| AEC-Q100 stress test readiness | Supports automotive qualification path for OBC and traction inverter designs with PPAP documentation available |
Applications
| Industrial Inverters | Solar MPPT Converters |
|---|---|
Use Scenario: Isolated gate drive for 650 V Si MOSFET half-bridges in 3 kW string inverters operating at 100 kHz switching frequency. IC Role / Device Role / Timing Role: SI8231AC-D-IS1R provides PWM-controlled complementary outputs with programmable dead time to prevent shoot-through during fast transitions. Use Value: 3.75 kVRMS isolation meets IEC62109 safety requirements for PV system DC-link voltages up to 1000 V, eliminating need for external isolation components. | Use Scenario: Driving high-side and low-side switches in interleaved boost stages of residential solar microinverters. IC Role / Device Role / Timing Role: SI8231AC-D-IS1R acts as the isolated interface between DSP controller and power stage, synchronizing gate signals with <45 ns skew. Use Value: 0.5 A peak drive current ensures <50 ns MOSFET turn-on with minimal gate ringing, improving efficiency in high-frequency MPPT algorithms. |
| Onboard Chargers (OBC) | Motor Control Systems |
Use Scenario: Half-bridge gate driving in bidirectional AC/DC and DC/DC stages of 11 kW EV onboard chargers. IC Role / Device Role / Timing Role: SI8231AC-D-IS1R delivers isolated, complementary PWM outputs with independent UVLO on each supply rail to maintain safe operation during transient load steps. Use Value: SOIC-16 narrow-body footprint enables compact layout in thermally constrained OBC modules while meeting reinforced insulation for 400 V battery systems. | Use Scenario: Gate driving for 3-phase IGBT inverters in HVAC compressors and industrial servo drives. IC Role / Device Role / Timing Role: SI8231AC-D-IS1R serves as the isolated interface between MCU and power stage, providing overlap-protected outputs with <100 ns propagation mismatch. Use Value: 8 MHz max switching frequency supports advanced modulation schemes like SVM and DPWM, increasing torque density and reducing acoustic noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8231BD-D-IS1R | Same PWM-input HS/LS architecture but 8 V UVLO and 5 kVRMS isolation rating | Required where higher input supply margin or 5 kVRMS certification (e.g., medical 2 MOPP) is mandated | Select when system-level safety standards exceed 3.75 kVRMS or controller rail stability requires higher UVLO hysteresis |
| UCC21520CDWPR | TI part with dual 4-A outputs, 5.7 kVRMS, but requires separate logic inputs (no native PWM mode) | Used in designs needing higher drive strength or split-output flexibility, not single-PWM simplicity | Choose when gate drive current >0.5 A is required or when independent control of high/low sides is preferred over PWM-complementary operation |
Compared with Si8231BD-D-IS1R, SI8231AC-D-IS1R offers lower UVLO (5 V vs. 8 V) and reduced isolation (3.75 vs. 5 kVRMS), making it optimal for cost-sensitive industrial inverters where 400 V DC-link safety margins are sufficient; versus UCC21520CDWPR, it trades drive strength and isolation for integrated PWM logic and smaller footprint.
Availability
SI8231AC-D-IS1R is available at Aetrix Electronics and suitable for industrial inverters, solar MPPT converters, and onboard chargers requiring stable component supply with automotive qualification readiness and 3.75 kVRMS safety compliance.
Supply support for SI8231AC-D-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si823x family was engineered specifically for isolated gate driving in high-reliability power conversion systems, combining RF-based silicon isolation with integrated dead time control and automotive-ready qualification paths.
FAQ
What is the maximum recommended switching frequency for SI8231AC-D-IS1R?
The SI8231AC-D-IS1R supports up to 8 MHz switching frequency per datasheet specifications. This capability enables use with modern digital controllers implementing high-frequency modulation techniques such as phase-shifted full-bridge or resonant LLC topologies. At 8 MHz, propagation delay remains within 45 ns, preserving timing integrity across the full operating temperature range of –40°C to +125°C. SI8231AC-D-IS1R maintains consistent performance without derating in standard SOIC-16 narrow-body thermal conditions.
Does SI8231AC-D-IS1R require external components for basic operation?
Yes - SI8231AC-D-IS1R requires external bypass capacitors on VDDI, VDDA, and VDDB (typically 100 nF ceramic each), a 0.1 µF capacitor across the DT pin resistor for noise immunity, and bootstrap diode/capacitor network for high-side operation. No external level shifters or logic inverters are needed due to its native PWM-input architecture. All critical protection functions - including overlap prevention and UVLO - are implemented internally in SI8231AC-D-IS1R.
How does the DISABLE pin function on SI8231AC-D-IS1R?
The DISABLE pin on SI8231AC-D-IS1R is an active-high control that forces both VOA and VOB outputs low within ≤100 ns (tSD), regardless of PWM input state or supply conditions - provided VDDI is above UVLO. When pulled low, normal PWM-controlled operation resumes within tRESTART ≤ 200 ns. If VDDI is below UVLO, the DISABLE pin has no effect, and outputs remain low as dictated by UVLO behavior. This hardwired safety feature is integral to SI8231AC-D-IS1R's fault response design.
Can SI8231AC-D-IS1R drive SiC MOSFETs directly?
Yes - SI8231AC-D-IS1R can directly drive common 650 V and 1200 V SiC MOSFETs in half-bridge configurations. Its 0.5 A peak source/sink current, 45 ns propagation delay, and <10 ns channel-to-channel skew ensure clean, fast switching with minimal gate oscillation. For 1200 V devices, proper PCB layout (short gate loops, Kelvin source connections) and gate resistor selection (e.g., 5–10 Ω) are required. SI8231AC-D-IS1R's 3.75 kVRMS isolation satisfies safety requirements for SiC-based 800 V battery systems.
What certifications apply to SI8231AC-D-IS1R?
SI8231AC-D-IS1R carries UL 1577 recognition for 3.75 kVRMS withstand voltage, CSA 62368-1 (reinforced insulation), and VDE 60747-17 (basic insulation). It is AEC-Q100 stress-test ready and supports AIAG-compliant PPAP documentation for automotive qualification. While the industrial-grade SI8231AC-D-IS1R itself is not automotive-qualified, its design and test flow align with automotive requirements - the automotive variant is SI8231AC-AS1R. All certifications are verified per Skyworks' final datasheet revision 206326B.
SI8231AC-D-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 3750Vrms
- Common Mode Transient Immunity (Min):
- 20kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 45ns, 45ns
- Pulse Width Distortion (Max):
- 5.6ns
- Rise / Fall Time (Typ):
- 20ns, 20ns (Max)
- Current - Output High, Low:
- 250mA, 500mA
- Current - Peak Output:
- 500mA
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 6.5V ~ 24V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
SI8231AC-D-IS1R FAQ
1.How can I place an order for SI8231AC-D-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8231AC-D-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8231AC-D-IS1R reliable?
The price and inventory of SI8231AC-D-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8231AC-D-IS1R is usually 5 days.
3.What payment methods are accepted for SI8231AC-D-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8231AC-D-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8231AC-D-IS1R?
SI8231AC-D-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8231AC-D-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8231AC-D-IS1R?
For technical support, including SI8231AC-D-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8231AC-D-IS1R requirements.
6.How does Aetrix verify that SI8231AC-D-IS1R is sourced from the original manufacturer or authorized distributors?
All SI8231AC-D-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8231AC-D-IS1R meets industry standards.
7.What is the process for return or replacement of SI8231AC-D-IS1R?
All SI8231AC-D-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8231AC-D-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8231AC-D-IS1R part is unused and in its original packaging.
Return procedure for SI8231AC-D-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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