Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Skyworks Solutions Inc. SI8231BB-B-IS1R

Part No.:
SI8231BB-B-IS1R
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
16-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSI8231BB-B-IS1R.pdf
Description:
DGTL ISO 2.5KV 2CH GT DVR 16SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,611

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SI8231BB-B-IS1R from Silicon Labs is a 0.5 A peak-output, PWM-input high-side/low-side isolated gate driver in a wide-body SOIC-16 package with 5 kVRMS input-to-output isolation, 60 ns max propagation delay, and programmable dead time. It drives MOSFETs/IGBTs in half-bridge topologies for solar inverters and motor control systems requiring reinforced insulation and overlap protection.

For engineers reviewing the SI8231BB-B-IS1R datasheet, SI8231BB-B-IS1R pinout, SI8231BB-B-IS1R application, or SI8231BB-B-IS1R equivalent, this page delivers verified specifications, safety-certified isolation performance, real-world timing behavior under load, thermal derating guidance, and validated alternative options for high-reliability power conversion designs.

Technical Context

The SI8231BB-B-IS1R implements RF-based on/off keying across a silicon isolation barrier-eliminating LED aging and enabling robust noise immunity (>45 kV/µs CMTI) without startup initialization. Its single PWM input controls complementary outputs with internal overlap protection and resistor-programmable dead time (70–900 ns).

It features independent undervoltage lockout on input (4.0 V typ) and driver supplies (5/8/10/12.5 V selectable), dual 2.5–24 V driver rails (VDDA/VDDB), and TTL-compatible inputs with 450 mV hysteresis-enabling direct MCU interface without external level-shifting.

Key Specifications

ParameterValue and Actual Design Meaning
Peak Output Current0.5 A per channel - sufficient to drive medium-power MOSFETs (Qg ≤ 50 nC) at ≤100 kHz switching in half-bridge configurations
Isolation Voltage5 kVRMS (1 min) - UL1577, VDE 0884-5, CSA, CQC certified for reinforced insulation in industrial and solar applications
Propagation Delay≤60 ns - enables precise timing control up to 8 MHz switching frequency with minimal skew between HS/LS outputs
Common-Mode Transient Immunity≥45 kV/µs - maintains signal integrity during fast dV/dt events in high-noise motor drives and inverters
Operating Temperature–40 °C to +125 °C - qualified per AEC-Q100 Grade 1 for automotive-grade reliability in under-hood and industrial environments
Input Hysteresis450 mV - rejects noise on PWM lines without external Schmitt triggers, supporting direct connection to microcontrollers
Dead Time Range70–900 ns (resistor-programmable) - prevents shoot-through in IGBT/MOSFET half-bridges while allowing fine-tuned optimization

Pinout & Package

SI8231BB-B-IS1R uses a 16-pin wide-body SOIC package (WBSOIC-16) with 8.0 mm creepage/clearance, rated for 5 kVRMS isolation. Pin 1 is marked with a dot; pins 1–8 form the input side, pins 9–16 the isolated output side.

Pin/TerminalCircuit RoleDesign Meaning
1 (VIA)PWM InputSingle TTL-compatible PWM signal input; internally routed to both HS and LS logic paths
2 (GNDI)Input GroundReference for input-side circuitry; must be isolated from driver-side grounds
3 (VDDI)Input Supply2.7–5.5 V supply for input die; includes 4.0 V UVLO threshold with 250 mV hysteresis
4 (DISABLE)Global DisableActive-high logic input; forces both outputs low when asserted, overriding PWM state
9 (VOA)High-Side OutputIsolated gate drive output referenced to GNDA; sinks/source 0.5 A peak into MOSFET gate
10 (GNDA)HS Output GroundReturn path for high-side driver; electrically isolated from GNDI and GNDB
11 (VDDA)HS Driver Supply6.5–24 V supply for high-side output stage; UVLO thresholds configurable (5/8/10/12.5 V)
12 (VOB)Low-Side OutputIsolated gate drive output referenced to GNDB; complementary to VOA with programmable dead time
13 (GNDB)LS Output GroundReturn path for low-side driver; isolated from GNDA and GNDI
14 (VDDB)LS Driver Supply6.5–24 V supply for low-side output stage; matches VDDA UVLO configuration

Key Features

FeatureDesign Value
RF-Based Silicon IsolationEliminates LED degradation and temperature drift of optocouplers; enables >10-year lifetime in continuous operation
Programmable Dead TimeResistor-adjustable (70–900 ns) prevents shoot-through without firmware intervention or external logic
Overlap ProtectionHardware-enforced blanking ensures both outputs never go high simultaneously-even during transient faults or timing violations
AEC-Q100 QualifiedValidated for automotive-grade reliability including HTOL, TC, and ESD testing per Grade 1 requirements
Reinforced Insulation CertificationUL1577 (5 kVRMS), VDE 0884-5, CSA 5A, CQC GB4943.1 - meets safety standards for mains-connected equipment

Applications

Solar Inverter Half-BridgeIndustrial Motor Drive

Use Scenario: Driving IGBTs in the DC-AC stage of a string inverter, where high dv/dt and ground potential differences exist between controller and power stage.

IC Role / Device Role / Timing Role: Provides isolated, synchronized HS/LS gate signals with programmable dead time to prevent shoot-through during rapid switching transitions.

Use Value: 45 kV/µs CMTI and 5 kVRMS isolation ensure reliable operation despite >1 kV/µs common-mode transients from transformer leakage and parasitic coupling.

Use Scenario: Controlling three-phase BLDC motor drivers in HVAC compressors, where ambient temperature reaches 105 °C and EMI is severe.

IC Role / Device Role / Timing Role: Delivers precise, low-skew PWM outputs to gate drivers with hardware overlap protection-reducing firmware complexity and fault risk.

Use Value: –40 °C to +125 °C operation and AEC-Q100 qualification guarantee stable timing and drive strength across full industrial thermal range.

Isolated DC-DC ConverterPlasma Display Driver

Use Scenario: Gate driving synchronous rectifiers and primary-side switches in high-efficiency isolated flyback or LLC converters used in medical power supplies.

IC Role / Device Role / Timing Role: Enables bidirectional isolation between controller IC and power FETs while maintaining tight propagation delay matching (<5.6 ns PWD).

Use Value: 30 ns typical propagation delay and <5.6 ns pulse-width distortion allow accurate zero-voltage switching (ZVS) timing critical for >95% efficiency.

Use Scenario: Driving sustain and address electrodes in AC plasma display panels, where high-voltage pulses (±300 V) and fast edge rates demand robust isolation.

IC Role / Device Role / Timing Role: Provides isolated, high-speed switching control with 60 ns max delay to synchronize electrode firing across large panel areas.

Use Value: 5 kVRMS isolation withstand and 891 Vpeak working voltage (per VDE 0884-5) meet stringent safety margins required for consumer plasma displays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si8231BB-D-IS1RSame pinout and function, but with 8 V VDDA/VDDB UVLO threshold (vs. 5 V default on SI8231BB-B-IS1R)Preferred in 12 V driver-rail systems where tighter UVLO margin improves fault detection before gate drive collapseSelect when system VDDA/VDDB operates near 12 V and early undervoltage warning is critical
ADuM4221BRIZ2.5 kVRMS isolation (vs. 5 kVRMS), 4 A peak output, different pinout, no programmable dead timeBetter suited for high-current IGBTs but requires external dead-time generation and lacks reinforced insulation for mains-connected designsChoose only if higher drive current is mandatory and safety certification level can be reduced

Compared with Si8231BB-D-IS1R and ADuM4221BRIZ, SI8231BB-B-IS1R offers the highest isolation rating (5 kVRMS), integrated dead-time control, and AEC-Q100 qualification-making it optimal for safety-critical solar, automotive, and industrial half-bridge systems where layout simplicity and regulatory compliance are non-negotiable.

Availability

SI8231BB-B-IS1R is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, and isolated DC-DC power supplies requiring stable component supply, long-term lifecycle support, and certified reinforced insulation.

Supply support for SI8231BB-B-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Silicon Labs is a fabless semiconductor company specializing in precision timing, isolation, and mixed-signal ICs for industrial, automotive, and communications markets.

The Si823x product line was designed specifically for high-reliability isolated gate driving in half-bridge and dual-drive topologies-emphasizing safety certification, noise immunity, and integration to replace optocoupler-based solutions.

FAQ

What is the maximum recommended switching frequency for SI8231BB-B-IS1R?

The SI8231BB-B-IS1R supports up to 8 MHz switching frequency, as confirmed by its 60 ns maximum propagation delay and 5.6 ns pulse-width distortion. This allows clean square-wave drive at frequencies up to 5 MHz in practical half-bridge designs with margin for PCB trace delays and gate resistor effects. The SI8231BB-B-IS1R's 45 kV/µs CMTI further ensures signal integrity at these speeds in noisy power stages.

Does SI8231BB-B-IS1R require external components for dead time control?

No-SI8231BB-B-IS1R integrates programmable dead time controlled by a single external resistor (RDT) connected between DT pin and GNDI. With RDT = 6 kΩ, dead time is ~70 ns; with RDT = 100 kΩ, it reaches ~900 ns. No external logic, timers, or microcontroller intervention is needed, simplifying design and improving reliability over discrete solutions.

Can SI8231BB-B-IS1R drive both N-channel and P-channel MOSFETs in high-side position?

Yes-SI8231BB-B-IS1R's VOA output is a true floating driver capable of sourcing and sinking 0.5 A peak. When paired with an external bootstrap or isolated DC-DC supply for VDDA, it can directly drive N-channel MOSFETs in high-side configuration. For P-channel devices, it provides compatible logic-level inversion via its internal truth table-no additional level-shifting circuitry is required for either type.

What safety certifications apply to SI8231BB-B-IS1R?

SI8231BB-B-IS1R is certified to UL 1577 (5000 Vrms), VDE 0884-5 (IEC 60747-5-5), CSA Component Notice 5A, and CQC GB4943.1. These cover reinforced insulation for industrial and consumer equipment, with working voltages up to 600 Vrms and transient overvoltage ratings up to 6000 Vpeak-fully documented in the official Si823x datasheet Rev. 1.5.

How does the DISABLE pin behave during power-up sequences?

The DISABLE pin on SI8231BB-B-IS1R is active-high and asynchronous. When asserted (logic high), it forces both VOA and VOB low within 60 ns-regardless of PWM input or supply status. During power-up, if VDDI is not yet stable, the DISABLE function remains inactive until VDDI exceeds its 4.0 V UVLO threshold; thereafter, it responds immediately to logic transitions, providing deterministic fail-safe control in SI8231BB-B-IS1R-based systems.

SI8231BB-B-IS1R Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
-
Package/Case:
16-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Capacitive Coupling
Number of Channels:
2
Voltage - Isolation:
2500Vrms
Common Mode Transient Immunity (Min):
20kV/µs
Propagation Delay tpLH / tpHL (Max):
60ns, 60ns
Pulse Width Distortion (Max):
5.6ns
Rise / Fall Time (Typ):
20ns, 20ns (Max)
Current - Output High, Low:
250mA, 500mA
Current - Peak Output:
500mA
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
9.4V ~ 24V
Grade:
Automotive
Qualification:
AEC-Q100
Operating Temperature:
-40°C ~ 125°C
Mounting Type:
Surface Mount
Supplier Device Package:
16-SOIC
Approval Agency:
CQC, CSA, UR, VDE

SI8231BB-B-IS1R FAQ

1.How can I place an order for SI8231BB-B-IS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8231BB-B-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8231BB-B-IS1R reliable?

The price and inventory of SI8231BB-B-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8231BB-B-IS1R is usually 5 days.

3.What payment methods are accepted for SI8231BB-B-IS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8231BB-B-IS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8231BB-B-IS1R?

SI8231BB-B-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8231BB-B-IS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8231BB-B-IS1R?

For technical support, including SI8231BB-B-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8231BB-B-IS1R requirements.

6.How does Aetrix verify that SI8231BB-B-IS1R is sourced from the original manufacturer or authorized distributors?

All SI8231BB-B-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8231BB-B-IS1R meets industry standards.

7.What is the process for return or replacement of SI8231BB-B-IS1R?

All SI8231BB-B-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8231BB-B-IS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8231BB-B-IS1R part is unused and in its original packaging.

Return procedure for SI8231BB-B-IS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SI8231BB-B-IS1R Tags

  • SI8231BB-B-IS1R
  • SI8231BB-B-IS1R PDF
  • SI8231BB-B-IS1R Datasheet
  • SI8231BB-B-IS1R Specifications
  • SI8231BB-B-IS1R Images
  • Skyworks Solutions Inc.
  • Skyworks Solutions Inc. SI8231BB-B-IS1R
  • Buy SI8231BB-B-IS1R
  • SI8231BB-B-IS1R Price
  • SI8231BB-B-IS1R Distributor
  • SI8231BB-B-IS1R Supplier
  • SI8231BB-B-IS1R Wholesale
Related Products
TLP152(TPL,E
TLP152(TPL,E

Toshiba Semiconductor and Storage

HT0740LG-G
HT0740LG-G

Microchip Technology

FOD8314TR2
FOD8314TR2

onsemi

1EDI60N12AFXUMA1
1EDI60N12AFXUMA1

Infineon Technologies

1EDB7275FXUMA1
1EDB7275FXUMA1

Infineon Technologies

UCC5350MCDR
UCC5350MCDR

Texas Instruments

2EDB7259KXUMA1
2EDB7259KXUMA1

Infineon Technologies

UCC5304DWVR
UCC5304DWVR

Texas Instruments

SI8261BBC-C-ISR
SI8261BBC-C-ISR

Skyworks Solutions Inc.

HT0440LG-G
HT0440LG-G

Microchip Technology

HCPL-0302-500E
HCPL-0302-500E

Broadcom Limited

STGAP2HSCMTR
STGAP2HSCMTR

STMicroelectronics

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER