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Skyworks Solutions Inc. SI8231BC-D-IS1R

Part No.:
SI8231BC-D-IS1R
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
16-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSI8231BC-D-IS1R.pdf
Description:
DGT ISO 3.75KV 2CH GT DVR 16SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,710

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Product details

Overview

SI8231BC-D-IS1R from Skyworks Solutions is a high-side/low-side isolated gate driver IC with PWM input, 0.5 A peak output current, 3.75 kVRMS isolation rating, and SOIC-16 narrow-body package. It integrates two independent isolated drivers using silicon-based RF isolation for robust MOSFET/IGBT drive in half-bridge topologies within solar inverters and onboard chargers.

For engineers reviewing the SI8231BC-D-IS1R datasheet, SI8231BC-D-IS1R pinout, SI8231BC-D-IS1R application, or SI8231BC-D-IS1R equivalent, key selection criteria include its 3.75 kVRMS reinforced insulation (VDE 60747-17), programmable dead time via external resistor, TTL-compatible PWM input with >400 mV hysteresis, and automotive-grade qualification readiness (AEC-Q100).

Technical Context

The SI8231BC-D-IS1R implements an RF-modulated isolation architecture with on/off keying, delivering 45 ns typical propagation delay and immunity to magnetic fields and EMI. Its PWM input directly controls complementary high-side and low-side outputs with built-in overlap protection and user-programmable dead time (via RDT), eliminating external logic for half-bridge timing control.

Each channel features independent undervoltage lockout (UVLO) with 8 V turn-on threshold, and outputs remain low during UVLO or when DISABLE is asserted. Driver outputs support separate or common grounds and operate up to 24 V supply voltage, enabling direct interface with 12 V or 15 V gate drive rails.

Key Specifications

ParameterValue and Actual Design Meaning
Isolation Rating3.75 kVRMS per UL1577 - enables reinforced insulation in industrial and automotive power systems requiring ≥3.0 kVRMS creepage/clearance
Peak Output Current0.5 A - sufficient to drive medium-power MOSFETs/IGBTs (e.g., <100 A rated devices) without external buffer stages
Propagation Delay45 ns max - supports switching frequencies up to 8 MHz while maintaining precise timing margins in high-frequency converters
UVLO Threshold8 V (rising) - ensures stable operation only after input supply stabilizes above logic-compatible level, preventing erratic gate switching
Input CompatibilityTTL-level PWM with >400 mV hysteresis - rejects noise on control lines in noisy motor drive or inverter environments
Dead Time ControlResistor-programmable (RDT) - allows fine-tuning of non-overlap interval (e.g., 100–1000 ns) to match specific FET switching characteristics
Operating Temperature–40 °C to +125 °C - qualified for under-hood automotive applications and industrial ambient conditions

Pinout & Package

SI8231BC-D-IS1R uses a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width, 10.3 mm length) with 1.27 mm pitch, optimized for high-density PCB layouts in space-constrained power modules.

Pin/TerminalCircuit RoleDesign Meaning
VDDIInput-side supplyPowers internal RF transmitter and logic; requires 4.5–5.5 V for TTL compatibility
GNDIInput-side groundReference for PWM input and internal isolation barrier; must be separated from output grounds
PWMSingle TTL-compatible control inputHigh = VOA high / VOB low; Low = VOA low / VOB high - enables compact half-bridge control
DISABLEGlobal shutdown controlActive-high signal forces both outputs low regardless of PWM state - critical for fault-safe shutdown
VDDAHigh-side driver supplyProvides gate drive voltage for VOA; supports up to 24 V for driving high-threshold SiC/GaN FETs
VOAHigh-side outputSource/sink capable driver for N-channel high-side switch; referenced to VDDB or floating ground
GNDAHigh-side ground referenceReturn path for VOA; may be tied to source of high-side FET or isolated ground plane
VDDBLow-side driver supplyIndependent supply rail for VOB; decoupled from VDDA to prevent cross-talk in shared power domains
VOBLow-side outputDirectly drives gate of low-side N-channel FET; complements VOA with programmable dead time
GNDBLow-side ground referenceReturn path for VOB; typically connected to system power ground or isolated return
DTDead time programming inputAnalog input accepting resistor-to-ground to set dead time (e.g., 100 kΩ ≈ 1 µs); includes noise filtering recommendation
NCNo-connectInternally unused pins (pins 1, 2, 15, 16) - must remain unconnected per design guidelines

Key Features

FeatureDesign Value
Dual isolated drivers in single SOIC-16Reduces component count and PCB area vs. discrete optocoupler + gate driver solutions in half-bridge designs
RF-based silicon isolationEliminates LED aging and CTR degradation issues of optocouplers; provides stable timing over temperature and lifetime
Programmable dead time with overlap protectionPrevents shoot-through in bridge circuits without external logic or microcontroller intervention
TTL-compatible PWM input with hysteresisEnables direct connection to MCU GPIO or PWM controller outputs without level-shifting or Schmitt-trigger buffers
AEC-Q100 qualified process flowSupports automotive qualification path for onboard chargers and traction inverters with zero-defect manufacturing methodology
Reinforced insulation (VDE 60747-17)Meets safety requirements for primary-secondary separation in EV charging and industrial power supplies

Applications

Solar InvertersOnboard Chargers (OBC)

Use Scenario: Driving high-voltage half-bridge IGBTs in string inverters operating at 1000 V DC bus with 20 kHz switching.

IC Role / Device Role / Timing Role: Isolated PWM-to-complementary gate driver with programmable dead time ensuring shoot-through prevention across wide temperature range.

Use Value: 3.75 kVRMS isolation meets IEC 62109 creepage requirements; 45 ns propagation delay enables precise timing control at high frequency.

Use Scenario: Controlling bidirectional AC/DC and DC/DC stages in 11 kW OBCs with SiC MOSFETs.

IC Role / Device Role / Timing Role: High-side/low-side gate driver with independent UVLO monitoring per output for fault-resilient operation.

Use Value: AEC-Q100-ready process and –40 °C to +125 °C rating support under-hood deployment; SOIC-16 narrow body fits compact OBC PCBs.

Battery Management Systems (BMS)Industrial Motor Drives

Use Scenario: Isolating gate signals between MCU and high-side switches in active cell-balancing circuits with 60 V–900 V stacks.

IC Role / Device Role / Timing Role: Reinforced-isolation driver enabling safe control of series-connected FETs without ground loop interference.

Use Value: 3.75 kVRMS withstand voltage exceeds BMS isolation requirements; DISABLE pin allows centralized fault shutdown.

Use Scenario: Driving dual N-channel MOSFETs in variable-frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Compact isolated driver replacing optocoupler + discrete driver pairs in cost-sensitive industrial inverters.

Use Value: 0.5 A output current suffices for <50 A motor FETs; SOIC-16 footprint simplifies layout and rework vs. multi-chip alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SI8231BD-D-IS1RSame pinout and function, but 5.0 kVRMS isolation rating and 8 V UVLO threshold (vs. 3.75 kVRMS and same 8 V)Suitable for higher-isolation applications such as medical power supplies or grid-tied inverters requiring full 5 kVRMS complianceSelect SI8231BD-D-IS1R if system-level safety certification mandates 5 kVRMS; otherwise SI8231BC-D-IS1R offers optimal cost/performance for 3.75 kVRMS use cases
UCC21520DWRTI part with 5.7 kVRMS isolation, dual-channel, 4 A peak output, and split-output configuration (not PWM-input)Requires external logic for PWM-to-complementary conversion; better suited for high-current SiC/GaN FETs where >0.5 A drive is neededChoose UCC21520DWR only when 4 A drive capability or higher isolation is required; SI8231BC-D-IS1R provides simpler, lower-cost integration for 0.5 A applications with native PWM support

Compared with SI8231BD-D-IS1R, SI8231BC-D-IS1R trades 1.25 kVRMS isolation margin for tighter cost control while retaining identical timing, packaging, and automotive qualification readiness; versus UCC21520DWR, it delivers integrated PWM logic and lower drive strength in a smaller footprint, reducing BOM count and layout complexity.

Availability

SI8231BC-D-IS1R is available at Aetrix Electronics and suitable for solar inverters, onboard chargers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.

Supply support for SI8231BC-D-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si823x family was designed specifically for isolated gate driving in high-reliability power conversion systems, emphasizing robustness, programmable timing control, and safety-certified insulation for automotive and industrial markets.

FAQ

What is the isolation voltage rating of the SI8231BC-D-IS1R?

The SI8231BC-D-IS1R has a certified 3.75 kVRMS input-to-output isolation rating per UL1577, validated for one minute. This rating satisfies reinforced insulation requirements per VDE 60747-17 and supports use in industrial inverters and automotive onboard chargers where 3.0–4.0 kVRMS isolation is mandated by system safety standards.

Does the SI8231BC-D-IS1R support programmable dead time?

Yes, the SI8231BC-D-IS1R supports programmable dead time via an external resistor (RDT) connected from the DT pin to ground. The dead time value follows DT (ns) ≈ 10 × RDT (kΩ), allowing precise tuning from ~100 ns to >1 µs. This feature is integral to the SI8231BC-D-IS1R's overlap protection and eliminates need for external timing circuitry in half-bridge designs.

What input logic levels does the SI8231BC-D-IS1R accept?

The SI8231BC-D-IS1R accepts TTL-level PWM input with >400 mV hysteresis on its single PWM pin. A logic high (≥2.0 V) sets VOA high and VOB low; a logic low (≤0.8 V) sets VOA low and VOB high. This direct compatibility enables connection to standard MCU GPIOs or PWM controllers without level-shifting components in the SI8231BC-D-IS1R signal path.

Is the SI8231BC-D-IS1R qualified for automotive applications?

The SI8231BC-D-IS1R is built on an AEC-Q100 qualified manufacturing flow and supports automotive PPAP documentation (AIAG-compliant), IMDS/CAMDS listing, and zero-defect methodology. While the "-I" suffix denotes industrial grade, the underlying process and testing meet automotive robustness requirements - making SI8231BC-D-IS1R suitable for OBC, BMS, and traction inverter designs pending final customer qualification.

What is the maximum supply voltage for the SI8231BC-D-IS1R outputs?

The SI8231BC-D-IS1R supports a maximum output-side supply voltage of 24 V on both VDDA and VDDB rails. This allows direct interfacing with 12 V, 15 V, or 18 V gate drive supplies used for silicon MOSFETs and IGBTs. Input-side VDDI is limited to 5.5 V, maintaining TTL compatibility while isolating high-voltage output domains in the SI8231BC-D-IS1R architecture.

SI8231BC-D-IS1R Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
-
Package/Case:
16-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Capacitive Coupling
Number of Channels:
2
Voltage - Isolation:
3750Vrms
Common Mode Transient Immunity (Min):
20kV/µs
Propagation Delay tpLH / tpHL (Max):
45ns, 45ns
Pulse Width Distortion (Max):
5.6ns
Rise / Fall Time (Typ):
20ns, 20ns (Max)
Current - Output High, Low:
250mA, 500mA
Current - Peak Output:
500mA
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
6.5V ~ 24V
Grade:
Automotive
Qualification:
AEC-Q100
Operating Temperature:
-40°C ~ 125°C
Mounting Type:
Surface Mount
Supplier Device Package:
16-SOIC
Approval Agency:
CQC, CSA, UR, VDE

SI8231BC-D-IS1R FAQ

1.How can I place an order for SI8231BC-D-IS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8231BC-D-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8231BC-D-IS1R reliable?

The price and inventory of SI8231BC-D-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8231BC-D-IS1R is usually 5 days.

3.What payment methods are accepted for SI8231BC-D-IS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8231BC-D-IS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8231BC-D-IS1R?

SI8231BC-D-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8231BC-D-IS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8231BC-D-IS1R?

For technical support, including SI8231BC-D-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8231BC-D-IS1R requirements.

6.How does Aetrix verify that SI8231BC-D-IS1R is sourced from the original manufacturer or authorized distributors?

All SI8231BC-D-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8231BC-D-IS1R meets industry standards.

7.What is the process for return or replacement of SI8231BC-D-IS1R?

All SI8231BC-D-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8231BC-D-IS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8231BC-D-IS1R part is unused and in its original packaging.

Return procedure for SI8231BC-D-IS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SI8231BC-D-IS1R Tags

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