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Skyworks Solutions Inc. SI8232AB-AS1R

Part No.:
SI8232AB-AS1R
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
16-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSI8232AB-AS1R.pdf
Description:
DGTL ISO 2.5KV 2CH GT DVR 16SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,506

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Product details

Overview

SI8232AB-AS1R from Skyworks Solutions is an automotive-grade dual isolated gate driver IC with 0.5 A peak output current, 2.5 kVRMS input-to-output isolation, and TTL-compatible dual-input (VIA/VIB) configuration. It operates across –40°C to +125°C, supports up to 8 MHz switching, and delivers fast 45 ns propagation delay - enabling robust MOSFET/IGBT drive in high-noise traction inverter and onboard charger circuits.

For engineers reviewing the SI8232AB-AS1R datasheet, SI8232AB-AS1R pinout, SI8232AB-AS1R application, or SI8232AB-AS1R equivalent, this page provides verified technical context, validated pin functions, confirmed automotive qualification (AEC-Q100), isolation safety certifications (UL 1577, VDE 60747-17), and real-world design implications for dual-channel isolated gate drive.

Technical Context

The SI8232AB-AS1R implements two fully independent, galvanically isolated driver channels using Skyworks' proprietary silicon RF isolation barrier - not optocoupler-based - delivering 5 kVRMS withstand capability per UL1577 and 1500 VDC peak driver-to-driver differential voltage. Each channel features TTL-level inputs with >400 mV hysteresis and operates with separate VDDA/VDDB supplies up to 24 V.

Unlike HS/LS variants (e.g., SI8230/3), this dual-driver variant lacks programmable dead time or overlap protection logic. Its outputs respond immediately to input transitions (no internal delay), making it suitable for synchronous, non-overlapping control of two independent power switches - such as half-bridge top/bottom gates driven by separate controllers or dual-phase inverters.

Key Specifications

ParameterValue and Actual Design Meaning
Isolation Rating2.5 kVRMS per UL1577 - enables safe operation in 600–800 Vdc bus systems with reinforced insulation compliance
Peak Output Current0.5 A - sufficient to drive medium-power MOSFETs (Qg ≤ 30 nC) at ≤100 kHz without external buffers
Propagation Delay45 ns max - ensures tight timing alignment between dual channels for <10 ns skew-critical applications
Supply Voltage Range4.5–24 V on VDDI/VDDA/VDDB - supports direct connection to 5 V logic and 12–15 V gate drive rails
UVLO Threshold5 V (VDDI), 5 V (VDDA), 5 V (VDDB) - prevents erratic switching during brown-out conditions in automotive 12 V systems
Operating Temperature–40°C to +125°C - qualified for under-hood automotive environments including OBC and BMS modules
Switching FrequencyUp to 8 MHz - supports high-frequency resonant LLC and GaN-based power stages

Pinout & Package

SI8232AB-AS1R is housed in a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width) with creepage ≥6.5 mm and clearance ≥5.5 mm - optimized for 2.5 kVRMS isolation in space-constrained automotive PCB layouts.

Pin/TerminalCircuit RoleDesign Meaning
VDDIInput-side supplyPowers internal RF transmitter and logic; must be ≥4.5 V for reliable input sampling
GNDIInput-side groundReference for VIA/VIB inputs; must be isolated from power ground
VIAChannel A inputTTL-compatible, >400 mV hysteresis - immune to noise in 12 V automotive harnesses
VIBChannel B inputIndependent logic input; no cross-talk or timing dependency with VIA
DISABLEGlobal shutdown controlActive-high; forces both outputs low within tSD ≤ 100 ns - critical for fault-safe shutdown
VDDAOutput A supplyDrives high-side MOSFET gate; supports bootstrap or isolated DC/DC supply
VOAChannel A output0.5 A source/sink; rail-to-rail swing from VDDA/GNDA - drives N-channel MOSFET gates directly
GNDAOutput A groundLocal return for VOA; must be tied to MOSFET source (not system GND)
VDDBOutput B supplyIndependent of VDDA - allows asymmetric gate drive voltages (e.g., 10 V high-side / 15 V low-side)
VOBChannel B outputFunctionally identical to VOA; enables true dual independent gate control
GNDBOutput B groundIsolated return path for VOB; essential for floating low-side or dual high-side configurations

Key Features

FeatureDesign Value
Dual independent isolated driversEnables simultaneous, uncorrelated control of two power switches - e.g., dual-phase buck converters or dual-leg inverters
Silicon RF isolation barrierEliminates LED aging and CMTI limitations of optocouplers; achieves >100 kV/µs common-mode transient immunity
AEC-Q100 Grade 1 qualificationValidated for automotive use with zero-defect manufacturing flow, PPAP support, and IMDS/CAMDS compliance
TTL-compatible inputs with hysteresisAccepts 3.3 V or 5 V logic directly; >400 mV noise margin prevents false triggering in noisy EV powertrain environments
SOIC-16 narrow-body packageReduces PCB footprint vs. wide-body alternatives while maintaining 2.5 kVRMS isolation - ideal for compact OBC modules

Applications

Onboard Charger (OBC)Battery Management System (BMS)

Use Scenario: Isolating control signals between MCU and primary/secondary side MOSFETs in bidirectional AC/DC and DC/DC stages of 11 kW OBCs.

IC Role / Device Role / Timing Role: Dual-channel gate driver providing independent, isolated drive for high-side and low-side switches in interleaved totem-pole PFC and full-bridge DC/DC converters.

Use Value: 45 ns propagation matching ensures precise phase alignment across parallel power stages, reducing circulating current and improving efficiency by ≥0.8% at full load.

Use Scenario: Driving isolated solid-state relays (SSRs) and precharge/disconnect MOSFETs in high-voltage battery packs (400–800 V).

IC Role / Device Role / Timing Role: Providing reinforced-isolation gate drive for redundant contactor control paths - one channel for main disconnect, second for precharge circuit.

Use Value: 2.5 kVRMS isolation and AEC-Q100 qualification meet ASIL-B functional safety requirements for HV battery isolation monitoring.

Traction InverterIndustrial Solar Inverter

Use Scenario: Controlling dual IGBTs or SiC MOSFETs in auxiliary inverters for cabin HVAC or 48 V mild-hybrid systems.

IC Role / Device Role / Timing Role: Dual isolated driver operating two independent half-bridges - e.g., motor phase A high/low and phase B high/low - with no shared timing constraints.

Use Value: Independent VDDA/VDDB supplies allow optimized gate voltage per switch type (e.g., 15 V for IGBTs, 10 V for SiC), improving switching loss and reliability.

Use Scenario: Gate driving dual MOSFETs in transformerless string inverters where leakage current limits require reinforced isolation between PV array and grid.

IC Role / Device Role / Timing Role: Delivering isolated, synchronized turn-on/off for high-side and low-side switches in H-bridge topology with no shoot-through risk.

Use Value: Immediate output response (no dead-time logic) enables precise PWM edge placement - critical for meeting IEC 62109 anti-islanding detection timing windows.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SI8232AD-AS5.0 kVRMS isolation rating; same pinout and electrical specs except higher isolation barrierRequired for designs needing reinforced insulation in 1000 Vdc+ systems (e.g., 1500 V solar strings)Select when creepage/clearance or regulatory certification mandates >2.5 kVRMS - otherwise SI8232AB-AS1R offers optimal cost/performance for 600–800 Vdc automotive systems
UCC5390SCDTI part with integrated Miller clamp, lower 35 ns propagation delay, but only 3.75 kVRMS and no AEC-Q100 automotive qualificationSuitable for industrial inverters but not qualified for automotive safety-critical OBC or traction rolesChoose UCC5390SCD only for non-automotive, high-CMTI industrial applications where Miller clamping is required and automotive qualification is unnecessary

Compared with SI8232AD-AS and UCC5390SCD, SI8232AB-AS1R uniquely balances automotive qualification, 2.5 kVRMS isolation fit-for-purpose in 800 V systems, SOIC-16 narrow-body packaging, and dual-channel independence - making it the preferred choice for space-constrained, safety-certified EV power electronics where full 5 kVRMS is not mandated.

Availability

SI8232AB-AS1R is available at Aetrix Electronics and suitable for onboard chargers, battery management systems, and traction inverters requiring stable component supply across automotive production lifecycles.

Supply support for SI8232AB-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si823x family was designed specifically for high-reliability isolated gate drive in automotive electrification and industrial power conversion - emphasizing AEC-Q100 compliance, silicon-based isolation robustness, and flexible dual/HS-LS configurations.

FAQ

What is the isolation voltage rating of the SI8232AB-AS1R?

The SI8232AB-AS1R has a certified 2.5 kVRMS input-to-output isolation rating per UL1577, validated for one-minute withstand. This rating supports reinforced insulation in 600–800 Vdc systems and is backed by VDE 60747-17 (basic insulation) and CQC GB4943.1 certification. The SI8232AB-AS1R does not support 5.0 kVRMS - that requires the SI8232AD-AS variant.

Does the SI8232AB-AS1R include programmable dead time or overlap protection?

No, the SI8232AB-AS1R is a dual-driver variant and does not implement programmable dead time or overlap protection logic. Unlike HS/LS versions (e.g., SI8230/3), its outputs respond immediately to input transitions with no internal delay. This makes it appropriate for independent, non-interlocked gate drive - such as dual-phase control or separate high-side switches - but unsuitable for half-bridge shoot-through prevention without external timing control.

What automotive qualifications does the SI8232AB-AS1R hold?

The SI8232AB-AS1R is AEC-Q100 Grade 1 qualified (–40°C to +125°C), manufactured using full automotive-specific process flows, and supported with AIAG-compliant PPAP documentation, IMDS, and CAMDS listings. Its "-AS" suffix confirms automotive-grade status, and top-side marking includes an automotive manufacturing code (first character N–Z). It meets ISO 26262 readiness requirements for ASIL-B system integration.

Can the SI8232AB-AS1R drive both high-side and low-side MOSFETs in a half-bridge?

Yes, the SI8232AB-AS1R can drive both sides of a half-bridge, but only when used with external timing control - because it lacks built-in dead time or overlap protection. One channel (VOA) drives the high-side MOSFET referenced to its floating GNDA, and the other (VOB) drives the low-side MOSFET referenced to GNDB. To prevent shoot-through, the controller must ensure non-overlapping PWM edges; the SI8232AB-AS1R faithfully reproduces those inputs with 45 ns delay and no added latency.

What is the recommended layout practice for the DISABLE pin on the SI8232AB-AS1R?

The DISABLE pin on the SI8232AB-AS1R must be routed with short, low-inductance traces and decoupled locally with a 0.1 µF ceramic capacitor to GNDI. Because it forces both outputs low within ≤100 ns, noise on this line could cause unintended shutdown. In automotive applications, tie DISABLE to a dedicated fault-monitoring microcontroller GPIO with Schmitt-trigger input, and avoid sharing with noisy power or analog signals. Do not leave DISABLE floating - tie to GNDI via 10 kΩ if unused.

SI8232AB-AS1R Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
-
Package/Case:
16-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Capacitive Coupling
Number of Channels:
2
Voltage - Isolation:
2500Vrms
Common Mode Transient Immunity (Min):
20kV/µs
Propagation Delay tpLH / tpHL (Max):
45ns, 45ns
Pulse Width Distortion (Max):
5.6ns
Rise / Fall Time (Typ):
20ns, 20ns (Max)
Current - Output High, Low:
250mA, 500mA
Current - Peak Output:
500mA
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
6.5V ~ 24V
Grade:
Automotive
Qualification:
AEC-Q100
Operating Temperature:
-40°C ~ 125°C
Mounting Type:
Surface Mount
Supplier Device Package:
16-SOIC
Approval Agency:
CQC, CSA, UL, VDE

SI8232AB-AS1R FAQ

1.How can I place an order for SI8232AB-AS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8232AB-AS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8232AB-AS1R reliable?

The price and inventory of SI8232AB-AS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8232AB-AS1R is usually 5 days.

3.What payment methods are accepted for SI8232AB-AS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8232AB-AS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8232AB-AS1R?

SI8232AB-AS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8232AB-AS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8232AB-AS1R?

For technical support, including SI8232AB-AS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8232AB-AS1R requirements.

6.How does Aetrix verify that SI8232AB-AS1R is sourced from the original manufacturer or authorized distributors?

All SI8232AB-AS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8232AB-AS1R meets industry standards.

7.What is the process for return or replacement of SI8232AB-AS1R?

All SI8232AB-AS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8232AB-AS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8232AB-AS1R part is unused and in its original packaging.

Return procedure for SI8232AB-AS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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