Skyworks Solutions Inc. SI8233AB-C-ISR

Overview

SI8233AB-C-ISR from Silicon Labs is a high-side/low-side isolated gate driver IC with 4.0 A peak output current per channel, 5 kVRMS input-to-output isolation (wide-body SOIC-16), 60 ns max propagation delay, and programmable dead time. It operates from –40 to +125 °C and drives IGBTs/MOSFETs in high-voltage motor inverters and solar power converters.

For engineers reviewing the SI8233AB-C-ISR datasheet, SI8233AB-C-ISR pinout, SI8233AB-C-ISR application, or SI8233AB-C-ISR equivalent, key selection criteria include its reinforced insulation rating (UL 1577, VDE 0884-5), overlap protection logic, dual independent isolated channels, and compatibility with 12–24 V gate drive supplies under high CMTI (>45 kV/µs) conditions.

Technical Context

The SI8233AB-C-ISR implements RF-based on/off keying across a silicon isolation barrier-enabling robust noise immunity without optical degradation or startup initialization. Its two-channel architecture supports independent high-side and low-side control via TTL-compatible inputs (VIA/VIB) with >400 mV hysteresis.

It integrates programmable dead time (70–900 ns via external resistor), undervoltage lockout on both input (4.0 V typ) and output (5–12.5 V selectable) rails, and overlap protection that prevents shoot-through during simultaneous high/low transitions.

Key Specifications

Pinout & Package

SI8233AB-C-ISR is housed in a RoHS-compliant wide-body SOIC-16 package (WBSOIC-16) with 8.0 mm creepage/clearance and 5 kVRMS isolation rating. Pin assignments are validated per Silicon Labs Rev. 1.5 datasheet Section 5 ("Pin Descriptions") and Figure 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.

Compared with ADUM4223BRIZ and UCC21520DW, SI8233AB-C-ISR uniquely combines 4.0 A drive strength, hardware-enforced overlap protection, and programmable dead time in a single certified 5 kVRMS package-reducing BOM count and improving functional safety compliance in high-reliability inverters.

Availability

SI8233AB-C-ISR is available at Aetrix Electronics and suitable for motor control systems, solar inverters, and industrial power supplies requiring stable component supply, long-term lifecycle assurance, and full regulatory compliance (UL, VDE, CSA, CQC).

Supply support for SI8233AB-C-ISR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Silicon Labs is a fabless semiconductor company specializing in precision timing, isolation, and mixed-signal ICs for industrial, automotive, and communications markets.

The Si823x product line was designed specifically for high-reliability isolated gate driving in high-voltage power conversion-emphasizing robustness, safety certification, and integration of protection features like overlap logic and programmable dead time.

FAQ

What is the isolation voltage rating of the SI8233AB-C-ISR?

The SI8233AB-C-ISR is rated for 5 kVRMS input-to-output isolation (1 minute, UL 1577) in its wide-body SOIC-16 package. This corresponds to reinforced insulation per IEC 60950-1 and IEC 60601-1, and it is production-tested to 6.0 kVRMS per VDE 0884-5. The rating applies specifically to the SI8233AB-C-ISR variant with WBSOIC-16 packaging.

Does the SI8233AB-C-ISR support programmable dead time, and how is it configured?

Yes, the SI8233AB-C-ISR supports programmable dead time via an external resistor connected to the DT pin. With R_DT = 6 kΩ, dead time is ~70 ns; with R_DT = 100 kΩ, it is ~900 ns. The SI8233AB-C-ISR datasheet specifies a maximum R_DT of 220 kΩ. This feature is implemented in hardware and requires no firmware or configuration registers.

What is the peak output current capability of the SI8233AB-C-ISR, and how does it compare to other Si823x variants?

The SI8233AB-C-ISR delivers 4.0 A peak sink current and 2.0 A peak source current per channel. This distinguishes it from the 0.5 A variants (e.g., SI8230/1/2/7) and aligns it with the high-drive members of the Si823x family (SI8233/4/5/6/8). Its 1.0 Ω sink resistance and 2.7 Ω source resistance are optimized for fast gate charging of high-power devices.

How does the overlap protection function work in the SI8233AB-C-ISR?

The SI8233AB-C-ISR implements hardware-based overlap protection that detects simultaneous high logic states on VIA and VIB inputs and forces both VOA and VOB outputs low until one input returns low. This prevents shoot-through in half-bridge configurations regardless of input timing violations. The behavior is defined in the Si8230/3 truth table (Section 3.3.2) and requires no external components.

Is the SI8233AB-C-ISR qualified for automotive applications?

Yes, the SI8233AB-C-ISR is AEC-Q100 qualified (Grade 1, –40 to +125 °C) and certified to multiple safety standards including UL 1577, VDE 0884-5, CSA Component Notice 5A, and CQC GB4943.1. These qualifications make it suitable for automotive auxiliary inverters, onboard chargers, and 48 V mild-hybrid systems where reinforced isolation and thermal robustness are required.