Skyworks Solutions Inc. SI8233AC-D-IS1R

Overview

SI8233AC-D-IS1R from Skyworks Solutions is a high-side/low-side isolated gate driver IC with 4.0 A peak output current, 3.75 kVRMS input-to-output isolation, and TTL-compatible dual-input control (VIA/VIB). It integrates two independently isolated drivers in a single SOIC-16 narrow-body package and supports up to 8 MHz switching frequency for half-bridge MOSFET/IGBT drive in industrial inverters and onboard chargers.

For engineers reviewing the SI8233AC-D-IS1R datasheet, SI8233AC-D-IS1R pinout, SI8233AC-D-IS1R application, or SI8233AC-D-IS1R equivalent, key selection criteria include its 4.0 A sink/source capability, programmable dead time via external resistor, UVLO threshold of 5 V, and automotive-grade qualification readiness (AEC-Q100) - all critical for robust power stage design in solar inverters and traction systems.

Technical Context

The SI8233AC-D-IS1R implements RF-based isolation with semiconductor barrier technology, delivering 45 ns typical propagation delay and >400 mV input hysteresis for noise immunity. Its dual-channel architecture features independent undervoltage lockout (UVLO) on VDDI, VDDA, and VDDB rails, with outputs defaulting low during UVLO conditions.

It supports overlap protection and user-programmable dead time (via DT pin and external resistor), enabling safe half-bridge operation without shoot-through. The device operates across –40°C to +125°C and accepts 4.5–24 V supply voltage on all driver rails.

Key Specifications

Pinout & Package

SI8233AC-D-IS1R is housed in a RoHS-compliant SOIC-16 narrow-body package (5.3 mm × 10.3 mm, 1.75 mm height) with creepage ≥ 8.0 mm and clearance ≥ 7.0 mm per IEC 60664-1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.

Compared with SI8233AC-D-IS1R, Si8233BD-D-IS1R offers higher isolation and UVLO at the cost of reduced compatibility with 5 V microcontrollers, while UCC21540ADWKR adds integrated protection features but lacks programmable dead time - making SI8233AC-D-IS1R optimal for cost-sensitive, timing-critical half-bridge designs requiring field-tunable dead time.

Availability

SI8233AC-D-IS1R is available at Aetrix Electronics and suitable for solar inverters, onboard chargers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.

Supply support for SI8233AC-D-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global leader in analog and mixed-signal semiconductors, specializing in RF, isolation, timing, and power management technologies for communications, automotive, and industrial markets.

The Si823x family was designed specifically for isolated gate driving in high-efficiency power conversion systems - emphasizing low propagation delay, high noise immunity, and flexible configuration across MOSFET, IGBT, and wide-bandgap devices.

FAQ

What is the maximum recommended switching frequency for SI8233AC-D-IS1R?

The SI8233AC-D-IS1R supports up to 8 MHz switching frequency per datasheet specifications. This capability enables use in high-frequency resonant converters such as LLC and active-clamp forward topologies. Real-world implementation depends on gate charge, layout parasitics, and thermal management - but the 45 ns propagation delay and 4.0 A drive strength ensure clean edges even at 2–5 MHz in SiC/GaN designs. SI8233AC-D-IS1R maintains timing integrity across temperature and supply variations.

Does SI8233AC-D-IS1R require external components for basic operation?

Yes - SI8233AC-D-IS1R requires external bypass capacitors (0.1 µF ceramic near each VDD pin), a pull-up resistor on the DISABLE pin if not actively driven, and optionally an RDT resistor + 0.1 µF capacitor on the DT pin for programmable dead time. No external level shifters or optocouplers are needed due to its TTL-compatible inputs and integrated isolation. SI8233AC-D-IS1R operates without initialization firmware or configuration registers.

Can SI8233AC-D-IS1R drive both N-channel and P-channel MOSFETs?

SI8233AC-D-IS1R is optimized for N-channel MOSFET and IGBT gate driving in high-side/low-side configurations. Its VOA and VOB outputs are push-pull with 4.0 A sink/source capability, enabling direct drive of N-channel devices. Driving P-channel high-side switches would require inverted logic and additional level-shifting circuitry not supported natively - SI8233AC-D-IS1R is not intended for P-channel gate drive without external adaptation.

What safety certifications apply to SI8233AC-D-IS1R?

SI8233AC-D-IS1R carries UL 1577 recognition (3.75 kVRMS for one minute), CSA certification to IEC 62368-1 (reinforced insulation), and VDE 60747-17 (basic insulation). These approvals validate its suitability for industrial power supplies and EV charging equipment. While SI8233AC-D-IS1R itself is industrial-grade, its automotive counterpart SI8233AC-AS1R adds AEC-Q100 qualification and PPAP documentation support.

How does the DISABLE function behave during UVLO conditions?

When VDDI falls below the 5 V UVLO threshold, the SI8233AC-D-IS1R input logic becomes inactive and the DISABLE pin loses effect - VOA and VOB remain low regardless of DISABLE state. Once VDDI rises above UVLO+, the DISABLE pin resumes full control. This behavior ensures fail-safe operation: no spurious output transitions occur during power-up or brown-out events. SI8233AC-D-IS1R guarantees controlled shutdown even under partial supply failure.