Skyworks Solutions Inc. SI8233AD-C-ISR

Overview

SI8233AD-C-ISR from Silicon Labs is a high-side/low-side isolated gate driver IC with 4.0 A peak output current, 5 kVRMS input-to-output isolation (wide-body SOIC-16), 60 ns max propagation delay, and programmable dead time. It drives IGBTs and MOSFETs in half-bridge topologies for solar inverters and motor control systems requiring reinforced insulation and overlap protection.

For engineers reviewing the SI8233AD-C-ISR datasheet, SI8233AD-C-ISR pinout, SI8233AD-C-ISR application, or SI8233AD-C-ISR equivalent, key selection criteria include its 4.0 A drive strength, dual-channel isolation barrier, TTL-compatible inputs with 400 mV hysteresis, 125 °C operating temperature, and UL/VDE/CSA safety certifications for industrial power conversion designs.

Technical Context

The SI8233AD-C-ISR implements RF-based on/off keying across a silicon isolation barrier to achieve robust noise immunity and fast 30–60 ns propagation delay. Its architecture supports independent high-side and low-side control with integrated overlap protection and externally programmable dead time via resistor (70–900 ns range).

It features dual UVLO monitoring: input-side VDDI threshold of 4.0 V (±0.45 V) and driver-side VDDA/VDDB thresholds selectable at 5/8/10/12.5 V. Output drivers are rated for 24 V max supply and deliver 4.0 A sink / 2.0 A source peak current into capacitive loads up to 10 nF.

Key Specifications

Pinout & Package

SI8233AD-C-ISR is housed in a RoHS-compliant wide-body SOIC-16 package (10.3 mm × 10.3 mm, 2.65 mm height) with creepage/clearance ≥8.0 mm and 5 kVRMS isolation rating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.

Compared with Si8233BD-C-ISR, SI8233AD-C-ISR provides 2× higher isolation voltage and wider creepage for reinforced insulation compliance; versus UCC21520DW, it offers hardware-programmable dead time eliminating MCU timing dependency - critical for fail-safe motor control.

Availability

SI8233AD-C-ISR is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and certified reinforced isolation.

Supply support for SI8233AD-C-ISR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Silicon Labs is a fabless semiconductor company specializing in isolation, timing, and mixed-signal ICs for industrial, automotive, and communications markets.

The Si823x family was designed specifically for high-reliability isolated gate driving in power conversion systems - combining RF isolation, programmable timing, and safety certification in a single package.

FAQ

What is the isolation voltage rating of the SI8233AD-C-ISR?

The SI8233AD-C-ISR is rated for 5 kVRMS input-to-output isolation per UL1577 (1 minute test), validated for reinforced insulation in systems up to 600 VRMS working voltage. This rating applies specifically to the wide-body SOIC-16 package variant and is confirmed by UL, VDE, CSA, and CQC certifications cited in the official datasheet Rev. 1.5.

Does the SI8233AD-C-ISR support programmable dead time?

Yes, the SI8233AD-C-ISR supports hardware-programmable dead time via an external resistor (R_DT) connected to the DT pin. The dead time is adjustable from 70 ns to 900 ns, enabling precise shoot-through prevention in half-bridge topologies without firmware intervention - a key feature distinguishing it from fixed-dead-time alternatives.

What is the maximum operating temperature for the SI8233AD-C-ISR?

The SI8233AD-C-ISR is specified for continuous operation from –40 °C to +125 °C ambient temperature. Its thermal resistance (θ_JA) is 100 °C/W in the wide-body SOIC-16 package, and internal thermal protection activates at 150 °C junction temperature - ensuring reliable performance in enclosed industrial and automotive environments.

Can the SI8233AD-C-ISR drive both IGBTs and MOSFETs?

Yes, the SI8233AD-C-ISR delivers 4.0 A peak sink and 2.0 A peak source current per channel, with 24 V max driver supply voltage and low output resistances (1.0 Ω sink / 2.7 Ω source). These specifications enable direct gate driving of medium-power IGBTs (up to 1000 V) and fast-switching MOSFETs in hard-switched and resonant topologies.

How does the SI8233AD-C-ISR implement overlap protection?

The SI8233AD-C-ISR integrates hardware-based overlap protection that automatically blanks both outputs during input transitions, preventing simultaneous high-side and low-side conduction. This function operates independently of dead time programming and is active across the full –40 to +125 °C temperature range - ensuring fail-safe operation even under transient fault conditions.