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Skyworks Solutions Inc. SI8233BD-C-ISR
- Part No.:
- SI8233BD-C-ISR
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
SI8233BD-C-ISR.pdf
- Description:
- DGTL ISO 5KV 2CH GATE DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,223
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Product details
Overview
SI8233BD-C-ISR from Silicon Labs is a 4.0 A peak-output, high-side/low-side isolated gate driver with 5 kVRMS input-to-output isolation, 60 ns max propagation delay, and programmable dead time. It operates from 6.5–24 V driver supplies and –40 to +125 °C, targeting IGBT/MOSFET drive in solar inverters and motor control systems.
For engineers reviewing the SI8233BD-C-ISR datasheet, SI8233BD-C-ISR pinout, SI8233BD-C-ISR application, or SI8233BD-C-ISR equivalent, key selection criteria include its 4.0 A sink/source capability, dual-channel isolation barrier, TTL-compatible inputs with 400 mV hysteresis, overlap protection logic, and SOIC-16 wide-body package with reinforced insulation per UL1577, VDE 0884-5, and IEC 60950-1.
Technical Context
The SI8233BD-C-ISR implements RF-based on/off keying across a silicon isolation barrier-replacing optocoupler architectures with superior CMTI (>45 kV/µs), no startup initialization, and deterministic timing. Its two independent isolated channels support high-side/low-side switching with dedicated VIA/VIB inputs and integrated overlap protection.
It features programmable dead time via external resistor (70–900 ns range), undervoltage lockout on both input (4.0 V typ) and driver supplies (5/8/10/12.5 V selectable thresholds), and thermal derating compliant with DIN EN 60747-5-5 up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Output Current | 4.0 A sink / 2.0 A source per channel - drives high-gate-charge IGBTs and SiC MOSFETs without external buffers. |
| Isolation Rating | 5 kVRMS (1 min, UL1577) - enables reinforced insulation in 600 VRMS mains-connected systems like PV inverters. |
| Propagation Delay | ≤60 ns (max) - supports >8 MHz switching frequency with tight timing control for ZVS/ZCS topologies. |
| Common-Mode Transient Immunity | >45 kV/µs - maintains signal integrity in noisy motor drive and inverter environments with fast dV/dt edges. |
| Operating Temperature | –40 to +125 °C ambient - qualified per AEC-Q100 Grade 1, suitable for under-hood and industrial power stages. |
| Input Hysteresis | 400 mV - rejects noise on TTL-level control signals in electrically harsh ECU and PLC interfaces. |
| Driver Supply Range | 6.5–24 V - compatible with standard 12 V/15 V gate drive rails and supports overvoltage margin for transient conditions. |
Pinout & Package
SI8233BD-C-ISR is housed in a RoHS-compliant SOIC-16 wide-body package (10.3 mm × 10.3 mm, 2.3 mm height) with creepage/clearance ≥8.0 mm and 5 kVRMS isolation rating. Pin 1 is marked with a dot; pins 1–8 form the input-side domain (VDDI, GNDI, VIA, VIB, DISABLE), and pins 9–16 form the isolated output-side domain (VDDA, GNDA, VOA, VDDB, GNDB, VOB).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (VIA) | High-side input | TTL-compatible control signal for VOA output; 400 mV hysteresis prevents chatter during slow-rising edges. |
| 2 (VIB) | Low-side input | TTL-compatible control signal for VOB output; independent of VIA, enabling asymmetric PWM or phase-shifted operation. |
| 3 (GNDI) | Input ground reference | Reference for VDDI and all input pins; must be separated from output grounds to maintain isolation integrity. |
| 4 (VDDI) | Input supply | 2.7–5.5 V logic supply; includes UVLO (4.0 V typ) to disable outputs during brownout. |
| 5 (DISABLE) | Global shutdown | Active-low enable; pulls both outputs low within 60 ns when asserted, critical for fault-safe shutdown. |
| 9 (VOA) | High-side output | 4.0 A sink / 2.0 A source gate driver; referenced to GNDA; drives high-side switch gate directly. |
| 10 (GNDA) | High-side output ground | Return path for VOA; electrically isolated from GNDI and GNDB; must connect to high-side switch source/emitter. |
| 11 (VDDA) | High-side driver supply | 6.5–24 V supply for VOA; includes UVLO with selectable threshold (5/8/10/12.5 V) to prevent partial turn-on. |
| 14 (VOB) | Low-side output | 4.0 A sink / 2.0 A source gate driver; referenced to GNDB; drives low-side switch gate directly. |
| 15 (GNDB) | Low-side output ground | Return path for VOB; isolated from GNDA and GNDI; connects to system power ground or low-side switch source/emitter. |
| 16 (VDDB) | Low-side driver supply | 6.5–24 V supply for VOB; independently regulated; UVLO matches VDDA for coordinated fault response. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable dead time | 70–900 ns via single external resistor - eliminates shoot-through risk in half-bridge configurations without MCU intervention. |
| Overlap protection logic | Hardware-enforced blanking on simultaneous high inputs - prevents concurrent high-side/low-side conduction even during control glitches. |
| RF isolation architecture | No LED aging or temperature drift; 60 ns propagation delay stability across –40 to +125 °C - enables precise timing in wide-temp applications. |
| Reinforced insulation certification | UL1577 (5 kVRMS), VDE 0884-5, IEC 60950-1 - meets safety requirements for Class I/II AC-connected equipment without additional creepage barriers. |
| Thermal robustness | 150 °C max junction temperature with 100 °C/W θJA - sustains continuous operation in compact heatsinkless designs. |
Applications
| Motor Control Systems | Solar Inverters |
|---|---|
Use Scenario: Driving IGBT half-bridges in HVAC compressors and servo drives with <1 µs timing skew tolerance. IC Role / Device Role / Timing Role: High-side/low-side isolated gate driver providing independent, synchronized turn-on/turn-off with hardware dead-time enforcement. Use Value: 4.0 A peak current ensures fast MOSFET/IGBT switching at 20 kHz carrier frequencies; >45 kV/µs CMTI prevents false triggering during motor phase-current transients. | Use Scenario: Controlling string-level DC-AC conversion in residential photovoltaic inverters operating at 600–1000 VDC bus. IC Role / Device Role / Timing Role: Reinforced-isolation gate driver enabling safe high-voltage side control while maintaining galvanic separation from low-voltage MCU domain. Use Value: 5 kVRMS isolation and 8.0 mm creepage meet IEC 62109-1 requirements; programmable dead time accommodates varying IGBT gate charge profiles across temperature. |
| Industrial Power Supplies | Plasma Display Drivers |
Use Scenario: Isolated gate driving in 3 kW telecom rectifiers using SiC MOSFETs with fast dV/dt edges. IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering precise, jitter-free gate signals to high-frequency synchronous rectifiers and primary-side switches. Use Value: 60 ns max propagation delay and <5.6 ns pulse-width distortion enable accurate zero-voltage switching; 24 V driver supply headroom supports gate overdrive for low Rds(on) conduction. | Use Scenario: Row/column addressing in large-format plasma display panels requiring high-voltage, high-speed switching of sustain electrodes. IC Role / Device Role / Timing Role: High-current isolated driver managing rapid electrode voltage transitions (±200 V, 100 ns edges) with minimal timing skew. Use Value: 4.0 A sink capability handles high capacitive loads of plasma cells; SOIC-16 wide-body package provides required 8.0 mm clearance for 200 V peak electrode swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side isolated gate drive applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8233AD-C-ISR | Same 4.0 A output and SOIC-16 WB package, but with 2.5 kVRMS isolation rating and narrower 4.0 mm creepage. | Approved for lower working voltage systems (e.g., 24–48 VDC industrial controls) where 5 kVRMS is not mandated. | Select when regulatory compliance only requires basic insulation and board space constraints favor identical footprint. |
| UCC21520DWR | TI part with 4-A/6-A sink/source, 5.7 kVRMS isolation, and integrated Miller clamp; uses different pinout and requires separate enable logic. | Targeted at high-reliability automotive traction inverters with ASIL-B functional safety support. | Choose when Miller clamping and higher CMTI (100 kV/µs) are needed, accepting layout redesign and higher BOM cost. |
Compared with SI8233AD-C-ISR, the SI8233BD-C-ISR delivers 2× higher isolation voltage (5 vs. 2.5 kVRMS) and full reinforced insulation compliance, while versus UCC21520DWR it offers simpler dead-time programming and lower quiescent current (3 mA vs. 5.5 mA), but lacks integrated safety diagnostics.
Availability
SI8233BD-C-ISR is available at Aetrix Electronics and suitable for solar inverters, motor control systems, and industrial power supplies requiring stable component supply, long-term lifecycle support, and certified reinforced isolation.
Supply support for SI8233BD-C-ISR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Silicon Labs is a fabless semiconductor company specializing in precision timing, isolation, and mixed-signal ICs for industrial, automotive, and communications markets.
The Si823x family was designed specifically for high-reliability isolated gate driving in power conversion systems, combining RF isolation technology with programmable timing control and safety-certified packaging.
FAQ
What is the maximum recommended driver supply voltage for SI8233BD-C-ISR?
The absolute maximum driver supply voltage (VDDA/VDDB) for SI8233BD-C-ISR is 30 V, but the recommended operating range is 6.5–24 V per the datasheet. Operating above 24 V risks exceeding internal power dissipation limits and may trigger UVLO shutdown; sustained use at 30 V is not advised. The SI8233BD-C-ISR is optimized for 12 V and 15 V gate drive rails common in IGBT and SiC MOSFET applications.
Does SI8233BD-C-ISR support independent control of high-side and low-side outputs?
Yes, SI8233BD-C-ISR supports fully independent control via separate VIA (high-side) and VIB (low-side) inputs. Each input drives its respective output (VOA/VOB) with TTL-compatible logic levels and 400 mV hysteresis. This allows asymmetric PWM, phase-shifted operation, or independent enable/disable - unlike PWM-input variants (e.g., SI8234) which derive both outputs from a single signal.
How is dead time configured on SI8233BD-C-ISR?
Dead time on SI8233BD-C-ISR is configured using an external resistor (RDT) connected between the DT pin and VDDI. Values from 6 kΩ to 220 kΩ yield programmable dead times from 70 ns to 900 ns. The SI8233BD-C-ISR integrates hardware overlap protection that enforces minimum blanking regardless of RDT setting, ensuring shoot-through prevention even during control signal faults.
What safety certifications apply to SI8233BD-C-ISR?
SI8233BD-C-ISR holds UL1577 recognition (5000 Vrms, 1 min), VDE certification per IEC 60747-5-5 and EN 60950-1 (reinforced insulation), CSA Component Acceptance Notice 5A, and CQC GB4943.1-2011. These cover 600 Vrms reinforced working voltage and validate its use in Class I/II AC-connected equipment such as grid-tied inverters and industrial motor drives.
Can SI8233BD-C-ISR drive SiC MOSFETs effectively?
Yes, SI8233BD-C-ISR is well-suited for SiC MOSFET gate driving due to its 4.0 A peak sink current, 12 ns typical rise/fall time (CL = 200 pF), and >45 kV/µs CMTI - all critical for managing fast dV/dt and minimizing switching losses. Its 24 V max driver supply supports gate overdrive to ensure full enhancement, and the 60 ns propagation delay enables precise timing control in hard-switched and resonant topologies.
SI8233BD-C-ISR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 20kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 60ns, 60ns
- Pulse Width Distortion (Max):
- 5.6ns
- Rise / Fall Time (Typ):
- 12ns, 12ns (Max)
- Current - Output High, Low:
- 2A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 9.4V ~ 24V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
SI8233BD-C-ISR FAQ
1.How can I place an order for SI8233BD-C-ISR through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8233BD-C-ISR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8233BD-C-ISR reliable?
The price and inventory of SI8233BD-C-ISR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8233BD-C-ISR is usually 5 days.
3.What payment methods are accepted for SI8233BD-C-ISR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8233BD-C-ISR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8233BD-C-ISR?
SI8233BD-C-ISR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8233BD-C-ISR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8233BD-C-ISR?
For technical support, including SI8233BD-C-ISR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8233BD-C-ISR requirements.
6.How does Aetrix verify that SI8233BD-C-ISR is sourced from the original manufacturer or authorized distributors?
All SI8233BD-C-ISR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8233BD-C-ISR meets industry standards.
7.What is the process for return or replacement of SI8233BD-C-ISR?
All SI8233BD-C-ISR units undergo pre-shipment inspection (PSI). If there is an issue with SI8233BD-C-ISR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8233BD-C-ISR part is unused and in its original packaging.
Return procedure for SI8233BD-C-ISR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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