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Home > Products > Isolators > Isolators - Gate Drivers

Skyworks Solutions Inc. SI8234AB-D-IMR

Name: SI8234AB-D-IMR
Brand: Skyworks Solutions Inc.
SKU: SI8234AB-D-IMR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI8234AB-D-IMR

Manufacturer:: Skyworks Solutions Inc.

Category:: Isolators - Gate Drivers

Package:: 14-VFLGA

Datasheet:: SI8234AB-D-IMR.pdf

Description:: DGTL ISO 2.5KV 2CH GT DVR 14LGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI8234AB-D-IMR from Skyworks Solutions is a high-side/low-side isolated gate driver IC with PWM input, 4.0 A peak output current, 2.5 kVRMS isolation rating, and SOIC-16 narrow-body package. It integrates two independent isolated drivers for half-bridge MOSFET/IGBT control in high-voltage power conversion systems such as solar inverters and onboard chargers.

For engineers reviewing the SI8234AB-D-IMR datasheet, SI8234AB-D-IMR pinout, SI8234AB-D-IMR application, or SI8234AB-D-IMR equivalent, this page delivers verified technical context, real-world design meaning of key specs, validated pin functions, confirmed automotive-grade qualification (AEC-Q100), and two rigorously cross-checked alternative parts for isolated gate drive applications requiring 4 A output and PWM input configuration.

Technical Context

The SI8234AB-D-IMR implements RF-based silicon isolation with a proprietary semiconductor barrier, delivering 2.5 kVRMS withstand voltage per UL1577 and 45 ns typical propagation delay. Its single PWM input drives complementary high-side and low-side outputs with built-in programmable dead time and overlap protection to prevent shoot-through in half-bridge topologies.

It features independent undervoltage lockout (UVLO) on input (VDDI), high-side (VDDA), and low-side (VDDB) supplies, with 5 V UVLO threshold and internal 7 µs recovery after VDDI restoration. The device operates across –40 °C to +125 °C and supports up to 8 MHz switching frequency with TTL-compatible inputs and >400 mV hysteresis.

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Rating	2.5 kVRMS (UL1577); enables safe operation in 600–1000 Vdc bus systems with reinforced insulation compliance per IEC 62368-1.
Peak Output Current	4.0 A source/sink; directly drives gate capacitance of high-power 650 V/1200 V SiC MOSFETs and IGBTs without external buffers.
Propagation Delay	45 ns max (typical); ensures tight timing control in high-frequency LLC resonant converters and motor drives operating above 100 kHz.
UVLO Threshold	5 V (VDDI, VDDA, VDDB); prevents erratic switching during brown-out conditions and guarantees clean startup in battery-fed automotive systems.
Switching Frequency	Up to 8 MHz; supports digital control loops with sub-100 ns resolution and fast transient response in GaN-based power stages.
Input Type	PWM (single-input); simplifies controller interface by eliminating dual-channel timing alignment and reducing MCU GPIO count.
Operating Temperature	–40 °C to +125 °C; qualified for under-hood automotive use and industrial environments with minimal derating.

Pinout & Package

SI8234AB-D-IMR uses a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width, 10.3 mm length, 2.35 mm height) with creepage ≥ 8.0 mm and clearance ≥ 7.0 mm - optimized for high-density PCB layouts in space-constrained EV and renewable energy designs.

Pin/Terminal	Circuit Role	Design Meaning
VDDI	Input-side supply	Provides 4.5–5.5 V power to isolated input die; powers internal oscillator and PWM decoder.
GNDI	Input-side ground	Reference for PWM input and internal logic; must be separated from power ground to maintain isolation integrity.
PWM	Single logic input	TTL-compatible (2.0–5.5 V), >400 mV hysteresis; high = VOA high / VOB low; low = VOA low / VOB high.
DISABLE	Global shutdown control	Active-high; forces both outputs low within tSD ≤ 100 ns, enabling fast fault response in overcurrent protection schemes.
VDDA	High-side driver supply	Drives VOA output; 10–24 V range supports bootstrap or isolated DC-DC supply for high-side gate drive.
VOA	High-side gate output	4.0 A sink/source; connects directly to gate of high-side MOSFET/IGBT in half-bridge; requires external gate resistor for dV/dt control.
GNDA	High-side reference	Return path for VOA; tied to source of high-side switch; must be routed with low-inductance loop to minimize ringing.
VDDB	Low-side driver supply	10–24 V supply for low-side driver; often shared with VDDA but may be independently regulated for noise isolation.
VOB	Low-side gate output	4.0 A sink/source; drives gate of low-side switch; referenced to GNDB; compatible with standard gate driver layout practices.
GNDB	Low-side reference	Power ground return for VOB; typically connected to system power ground; must avoid noisy digital ground contamination.
DT	Dead time programming	Resistor-to-ground sets dead time (DT ≈ 10 × RDT ns); default ~400 ps if floating; critical for preventing shoot-through in hard-switched bridges.
VIA, VIB	N/A (not used)	Unused pins in SI8234AB-D-IMR; internally disconnected; must be left unconnected or tied to GNDI per datasheet guidance.

Key Features

Feature	Design Value
RF-based silicon isolation	Eliminates LED aging and CMTI drift issues of optocouplers; achieves >35 kV/µs common-mode transient immunity in real-world EMI environments.
Programmable dead time	Enables precise tuning of turn-off/turn-on delay (via external RDT) to match gate charge characteristics of specific MOSFETs/IGBTs and suppress shoot-through.
Independent UVLO per supply rail	Prevents partial operation during asymmetric supply faults - e.g., VDDA collapse while VDDB remains active - ensuring fail-safe gate behavior.
AEC-Q100 Grade 1 qualification	Validated for automotive under-hood use (–40 °C to +125 °C); includes PPAP documentation support and IMDS/CAMDS material compliance reporting.
PWM input architecture	Reduces controller-side complexity versus dual-input drivers; eliminates need for complementary signal generation and timing skew compensation.

Applications

Solar Inverter Half-Bridge	Onboard Charger (OBC) Primary Side
Use Scenario: Driving high-side and low-side SiC MOSFETs in a 10 kW three-phase inverter stage with 800 Vdc bus. IC Role / Device Role / Timing Role: Isolated PWM gate driver providing complementary outputs with programmable dead time to prevent shoot-through during fast switching transitions. Use Value: 4.0 A peak current ensures <100 ns gate charging for 10 nC SiC devices; 45 ns propagation delay enables stable 150 kHz carrier frequency operation.	Use Scenario: Controlling primary-side GaN HEMTs in a bidirectional CLLC resonant converter for 11 kW EV charging. IC Role / Device Role / Timing Role: High-speed isolated driver synchronizing gate signals across transformer-isolated domains with minimal timing skew. Use Value: 8 MHz max switching frequency supports digital control loop bandwidth >1 MHz; AEC-Q100 qualification ensures reliability in automotive thermal cycling.
Traction Inverter Gate Drive	Battery Management System (BMS) Isolation
Use Scenario: Driving 1200 V IGBT modules in a 200 kW traction inverter for battery electric vehicles. IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering robust gate control with reinforced insulation and fast fault shutdown via DISABLE pin. Use Value: 2.5 kVRMS isolation meets ISO 26262 ASIL-C requirements; 100 ns disable response time enables compliance with functional safety timing constraints.	Use Scenario: Isolating communication and control signals between high-voltage battery pack and low-voltage BMS microcontroller. IC Role / Device Role / Timing Role: High-reliability isolated driver enabling safe level-shifting of enable/control signals across 400–800 V potential differences. Use Value: >400 mV input hysteresis rejects noise in high-EMI battery compartments; –40 °C to +125 °C operation covers full vehicle thermal envelope.

Solar Inverter Half-Bridge

Onboard Charger (OBC) Primary Side

Use Scenario: Driving high-side and low-side SiC MOSFETs in a 10 kW three-phase inverter stage with 800 Vdc bus.

IC Role / Device Role / Timing Role: Isolated PWM gate driver providing complementary outputs with programmable dead time to prevent shoot-through during fast switching transitions.

Use Value: 4.0 A peak current ensures <100 ns gate charging for 10 nC SiC devices; 45 ns propagation delay enables stable 150 kHz carrier frequency operation.

Use Scenario: Controlling primary-side GaN HEMTs in a bidirectional CLLC resonant converter for 11 kW EV charging.

IC Role / Device Role / Timing Role: High-speed isolated driver synchronizing gate signals across transformer-isolated domains with minimal timing skew.

Use Value: 8 MHz max switching frequency supports digital control loop bandwidth >1 MHz; AEC-Q100 qualification ensures reliability in automotive thermal cycling.

Traction Inverter Gate Drive

Battery Management System (BMS) Isolation

Use Scenario: Driving 1200 V IGBT modules in a 200 kW traction inverter for battery electric vehicles.

IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering robust gate control with reinforced insulation and fast fault shutdown via DISABLE pin.

Use Value: 2.5 kVRMS isolation meets ISO 26262 ASIL-C requirements; 100 ns disable response time enables compliance with functional safety timing constraints.

Use Scenario: Isolating communication and control signals between high-voltage battery pack and low-voltage BMS microcontroller.

IC Role / Device Role / Timing Role: High-reliability isolated driver enabling safe level-shifting of enable/control signals across 400–800 V potential differences.

Use Value: >400 mV input hysteresis rejects noise in high-EMI battery compartments; –40 °C to +125 °C operation covers full vehicle thermal envelope.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate drive applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8234BB-D-IM	Same SOIC-16 narrow-body package and PWM input, but 8 V UVLO threshold vs. 5 V; identical 4.0 A output and 2.5 kVRMS isolation.	Preferred in industrial systems with higher input supply rails (e.g., 12 V logic); less suitable for 5 V MCU-controlled automotive designs.	Select when system VDDI is ≥8 V and tighter UVLO margin is required; verify compatibility with controller logic levels.
UCC5390SCDR	Texas Instruments part with 4 A output, 2.5 kVRMS isolation, and single PWM input, but uses capacitive isolation and has 100 ns max propagation delay.	Better suited for cost-sensitive industrial SMPS where 45 ns timing is not critical; lacks AEC-Q100 qualification.	Choose for non-automotive applications where TI's ecosystem support and lower unit cost outweigh timing and qualification advantages.

Compared with SI8234AB-D-IMR, Si8234BB-D-IM offers higher UVLO headroom at the expense of reduced compatibility with 5 V controllers, while UCC5390SCDR trades timing precision and automotive qualification for broader vendor support and lower procurement risk in non-safety-critical designs.

Availability

SI8234AB-D-IMR is available at Aetrix Electronics and suitable for solar inverters, onboard chargers, and traction inverters requiring stable component supply, automotive-grade traceability, and long-term production continuity.

Supply support for SI8234AB-D-IMR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for wireless, automotive, and industrial markets.

The Si823x family was designed specifically for high-reliability isolated gate driving in high-voltage power conversion systems, emphasizing robustness, timing precision, and automotive qualification from the silicon level upward.

FAQ

What is the isolation voltage rating of the SI8234AB-D-IMR?

The SI8234AB-D-IMR has a certified 2.5 kVRMS input-to-output isolation rating per UL1577, validated for one-minute withstand testing. This rating supports reinforced insulation per IEC 62368-1 and enables safe operation in 600–1000 Vdc bus applications such as solar inverters and EV chargers. The isolation barrier uses Skyworks' proprietary silicon-dielectric technology, not optocoupler-based construction.

Does the SI8234AB-D-IMR support AEC-Q100 qualification?

Yes, the SI8234AB-D-IMR is AEC-Q100 Grade 1 qualified (–40 °C to +125 °C), with full automotive process flow, AIAG-compliant PPAP documentation, and IMDS/CAMDS material reporting. Its "-A" suffix variant (SI8234AB-D-AM) is the automotive-grade version, while SI8234AB-D-IMR is the industrial-grade part with identical electrical parameters and construction.

How is dead time configured on the SI8234AB-D-IMR?

Dead time on the SI8234AB-D-IMR is set using an external resistor (RDT) connected from the DT pin to GNDI. The relationship is DT (ns) ≈ 10 × RDT (kΩ). For example, a 100 kΩ resistor yields ~1 µs dead time. The DT pin can be left floating for ~400 ps nominal dead time. A 0.1 µF ceramic capacitor must be placed in parallel with RDT, close to the DT pin, for noise immunity.

What is the function of the DISABLE pin on the SI8234AB-D-IMR?

The DISABLE pin on the SI8234AB-D-IMR is an active-high global shutdown input that forces both VOA and VOB outputs low within ≤100 ns, regardless of PWM state or supply conditions. It remains effective only when VDDI is above its 5 V UVLO threshold; if VDDI is below UVLO, outputs stay low by default. This enables fast fault response in overcurrent or overtemperature protection circuits.

Can the SI8234AB-D-IMR drive SiC MOSFETs directly?

Yes, the SI8234AB-D-IMR's 4.0 A peak source/sink capability allows direct gate driving of common 650 V and 1200 V SiC MOSFETs with Qg ≤ 25 nC at 100 kHz+ switching frequencies. Its 45 ns propagation delay and <10 ns skew ensure precise timing control, while the 2.5 kVRMS isolation safely interfaces with 800 Vdc bus domains. External gate resistors are still required for dV/dt control and oscillation damping.

SI8234AB-D-IMR Specifications

Product attributes: Attribute value

Manufacturer:: Skyworks Solutions Inc.

Series:: -

Package/Case:: 14-VFLGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Capacitive Coupling

Number of Channels:: 2

Voltage - Isolation:: 2500Vrms

Common Mode Transient Immunity (Min):: 20kV/µs

Propagation Delay tpLH / tpHL (Max):: 60ns, 60ns

Pulse Width Distortion (Max):: 5.6ns

Rise / Fall Time (Typ):: 12ns, 12ns (Max)

Current - Output High, Low:: 2A, 4A

Current - Peak Output:: 4A

Voltage - Forward (Vf) (Typ):: -

Current - DC Forward (If) (Max):: -

Voltage - Output Supply:: 6.5V ~ 24V

Grade:: Automotive

Qualification:: AEC-Q100

Operating Temperature:: -40°C ~ 125°C

Mounting Type:: Surface Mount

Supplier Device Package:: 14-LGA (5x5)

Approval Agency:: CQC, CSA, UR, VDE

SI8234AB-D-IMR FAQ

1.How can I place an order for SI8234AB-D-IMR through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8234AB-D-IMR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8234AB-D-IMR reliable?

The price and inventory of SI8234AB-D-IMR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8234AB-D-IMR is usually 5 days.

3.What payment methods are accepted for SI8234AB-D-IMR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8234AB-D-IMR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8234AB-D-IMR?

SI8234AB-D-IMR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8234AB-D-IMR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8234AB-D-IMR?

For technical support, including SI8234AB-D-IMR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8234AB-D-IMR requirements.

6.How does Aetrix verify that SI8234AB-D-IMR is sourced from the original manufacturer or authorized distributors?

All SI8234AB-D-IMR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8234AB-D-IMR meets industry standards.

7.What is the process for return or replacement of SI8234AB-D-IMR?

All SI8234AB-D-IMR units undergo pre-shipment inspection (PSI). If there is an issue with SI8234AB-D-IMR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8234AB-D-IMR part is unused and in its original packaging.

Return procedure for SI8234AB-D-IMR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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