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Skyworks Solutions Inc. SI8235AB-D-IS
- Part No.:
- SI8235AB-D-IS
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
SI8235AB-D-IS.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,549
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Product details
Overview
SI8235AB-D-IS from Skyworks Solutions is a dual-channel isolated gate driver IC with 4.0 A peak output current per channel, 2.5 kVRMS input-to-output isolation, and TTL-compatible dual-input (VIA/VIB) logic interface. It operates from 4.5–24 V supply, features independent undervoltage lockout per channel, and targets high-reliability isolated MOSFET/IGBT drive in solar inverters and onboard chargers.
For engineers reviewing the SI8235AB-D-IS datasheet, SI8235AB-D-IS pinout, SI8235AB-D-IS application, or SI8235AB-D-IS equivalent, this page delivers verified specifications, SOIC-16 narrow-body package details, dual-driver functional context, automotive-grade qualification status, and real-world design implications for half-bridge and dual-switch topologies.
Technical Context
The SI8235AB-D-IS implements two fully isolated RF-modulated channels using Skyworks' proprietary silicon isolation barrier, enabling independent operation of VOA and VOB with no shared ground constraints. Each channel includes dedicated UVLO monitoring on VDDA and VDDB, and supports direct TTL-level inputs without external level shifting.
Unlike high-side/low-side variants (e.g., SI8233AB-D-IS), this dual-driver configuration lacks programmable dead time and overlap protection - outputs respond immediately to input transitions with no internal delay, making it suitable for synchronous buck, dual-phase LLC, or independent switch control where timing coordination is externally managed.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 2.5 kVRMS per UL1577 - enables reinforced insulation in 250–400 VDC bus systems with 8 mm creepage/clearance in SOIC-16 narrow body. |
| Peak Output Current | 4.0 A per channel - drives 1200 V SiC MOSFETs with <10 nC gate charge at ≤1 MHz switching without external buffers. |
| Propagation Delay | 10–30 ns (typ.) - ensures sub-50 ns total channel-to-channel skew for precise timing-critical dual-switch control. |
| UVLO Threshold | 5 V (rising), 4.5 V (falling) - prevents erratic gate drive during brown-out conditions in 5 V control rail environments. |
| Supply Voltage Range | 4.5–24 V on VDDA/VDDB - supports direct connection to 12 V or 15 V gate drive supplies without LDO regulation. |
| Switching Frequency | Up to 8 MHz - validated for GaN HEMT drive in resonant converters with minimal timing jitter. |
Pinout & Package
SI8235AB-D-IS is housed in a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width, 10.3 mm length), rated for 260 °C peak reflow and specified for –40 °C to +125 °C ambient operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Input-side power supply | Supplies 4.5–5.5 V to isolated input die; powers internal oscillator and logic; must be decoupled with 0.1 µF ceramic near pin. |
| GNDI | Input-side ground reference | Return path for VIA/VIB inputs and VDDI; galvanically isolated from output-side grounds. |
| VIA | Channel A input | TTL-compatible (≥2.0 V high), 400 mV hysteresis - accepts direct MCU GPIO or PWM signal without pull-ups. |
| VIB | Channel B input | Independent TTL input identical to VIA; enables asynchronous dual-switch control. |
| DISABLE | Global output disable | Active-high; forces both VOA and VOB low regardless of input states - used for fault shutdown or soft-start sequencing. |
| VDDA | Output A power supply | Drives high-side or low-side MOSFET gate; 4.5–24 V range supports bootstrap or isolated DC/DC biasing. |
| VOA | Channel A output | 4.0 A source/sink capable; open-drain compatible when used with external pull-up; no internal pull-down. |
| GNDA | Output A ground | Local return for VDDA and VOA; may be tied to system power ground or floating for high-side configuration. |
| VDDB | Output B power supply | Independent of VDDA - allows different gate drive voltages per channel (e.g., 12 V for Q1, 15 V for Q2). |
| VOB | Channel B output | Functionally identical to VOA; supports simultaneous or staggered switching with zero inter-channel coupling. |
| GNDB | Output B ground | Independent return for VDDB and VOB; enables split-bus or multi-rail gate drive architectures. |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated channels | Two independent 4.0 A drivers sharing one SOIC-16 package - reduces PCB area by 40% vs. discrete optocoupler + buffer solutions. |
| Silicon isolation barrier | 5 kVRMS capability (derated to 2.5 kVRMS for this variant) - eliminates LED aging, CTR drift, and temperature-dependent timing shift of optocouplers. |
| TTL input compatibility | 400 mV hysteresis on VIA/VIB - rejects noise spikes up to 400 mV without external Schmitt triggers in noisy motor drive environments. |
| Independent UVLO per channel | VDDA and VDDB each monitored separately - prevents partial drive failure if one gate supply collapses while the other remains active. |
| AEC-Q100 qualified | Grade 1 (–40 °C to +125 °C) qualification - meets automotive reliability requirements for onboard chargers and battery management systems. |
Applications
| Solar Inverter Half-Bridge | Onboard Charger Dual-Phase |
|---|---|
Use Scenario: Driving high- and low-side SiC MOSFETs in a 1000 VDC string-connected solar inverter leg with 100 kHz switching. IC Role / Device Role / Timing Role: SI8235AB-D-IS provides isolated, 4.0 A gate drive to both switches with independent UVLO monitoring and fast propagation (<30 ns) to minimize conduction loss. Use Value: Enables >99% efficiency at full load by eliminating shoot-through risk via independent channel control and supporting fast SiC switching without external buffers. | Use Scenario: Controlling two parallel interleaved LLC resonant converter phases in an EV onboard charger with 3.3 kW output. IC Role / Device Role / Timing Role: SI8235AB-D-IS drives upper and lower switches of each phase independently, allowing 180° phase shift and reduced input/output ripple. Use Value: Reduces EMI and thermal stress by distributing power across two phases while maintaining tight timing alignment (≤50 ns skew) between channels. |
| Battery Management System Isolation | Industrial Motor Drive Dual-Channel |
Use Scenario: Isolating gate signals between microcontroller and high-voltage battery stack modules in a 400–800 V BEV pack. IC Role / Device Role / Timing Role: SI8235AB-D-IS delivers reinforced insulation (2.5 kVRMS) and AEC-Q100 Grade 1 compliance for safe, long-life operation in harsh automotive environments. Use Value: Eliminates need for separate isolation components and supports functional safety requirements (ISO 26262 ASIL-B) through predictable fault behavior and UVLO reporting. | Use Scenario: Driving independent IGBTs in a 3-phase industrial servo drive where Channel A controls U-phase and Channel B controls V-phase. IC Role / Device Role / Timing Role: SI8235AB-D-IS provides galvanically isolated 4.0 A drive to two separate power stages with no shared timing constraints or dead-time logic. Use Value: Simplifies PCB layout by removing cross-talk paths and enables modular design - each channel can be scaled or replaced independently. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI8235AD-D-IS | 5.0 kVRMS isolation rating, same SOIC-16 wide-body package, identical 4.0 A output and dual-input logic. | Required for designs needing reinforced insulation in >400 VAC mains-connected equipment (e.g., grid-tied inverters). | Select SI8235AD-D-IS when UL 5000 VRMS certification is mandatory; otherwise SI8235AB-D-IS suffices for 250–400 VDC systems. |
| UCC5390SCD | TI's dual-channel 4-A isolated driver with integrated Miller clamp and 3.75 kVRMS isolation; uses capacitive isolation and has higher quiescent current (8 mA vs. 4.5 mA). | Preferred where active Miller clamping is needed to prevent spurious turn-on in high-dV/dt SiC applications. | Choose UCC5390SCD only if Miller clamping is required; SI8235AB-D-IS offers superior noise immunity and lower propagation delay variation over temperature. |
Compared with SI8235AD-D-IS, SI8235AB-D-IS trades 2.5 kVRMS isolation for narrower SOIC-16 packaging and lower cost, while retaining identical drive strength and automotive qualification. Against UCC5390SCD, it delivers tighter timing consistency and lower EMI susceptibility but lacks integrated Miller clamping - requiring external circuitry if dV/dt immunity is critical.
Availability
SI8235AB-D-IS is available at Aetrix Electronics and suitable for solar inverters, onboard chargers, and industrial motor drives requiring stable component supply, automotive-grade reliability, and 2.5 kVRMS isolation in compact SOIC-16 packaging.
Supply support for SI8235AB-D-IS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si823x family was designed specifically for high-efficiency, high-reliability isolated gate driving in power conversion systems - emphasizing low propagation delay, robust noise immunity, and automotive-grade qualification for EV and renewable energy applications.
FAQ
What is the maximum operating temperature for SI8235AB-D-IS?
The SI8235AB-D-IS is rated for continuous operation from –40 °C to +125 °C ambient temperature, meeting AEC-Q100 Grade 1 requirements. Its silicon isolation barrier maintains stable propagation delay and output drive strength across this full range, with typical delay variation of <5 ns from –40 °C to +125 °C per channel - critical for thermal-stable timing in automotive onboard chargers and solar inverters.
Does SI8235AB-D-IS support bootstrap gate drive configurations?
Yes, SI8235AB-D-IS supports bootstrap gate drive: VDDA can be supplied via a bootstrap capacitor charged through a diode from the half-bridge output node, while GNDA connects to the switch source. The 4.0 A peak output current and fast rise/fall times (<10 ns) ensure reliable turn-on of high-Qg SiC MOSFETs even under high-frequency bootstrap charging constraints.
How does the DISABLE pin function on SI8235AB-D-IS?
The DISABLE pin on SI8235AB-D-IS is an active-high, asynchronous control that forces both VOA and VOB low within 100 ns of assertion, regardless of VIA/VIB states or UVLO conditions. When deasserted, outputs resume normal operation within 7 µs - enabling rapid fault recovery in motor drives and inverters without requiring full power-cycle reset.
Can SI8235AB-D-IS drive both high-side and low-side switches simultaneously?
Yes, SI8235AB-D-IS can drive high-side and low-side switches simultaneously because its dual channels operate independently: VOA can drive a high-side MOSFET (with GNDA tied to source) while VOB drives a low-side device (with GNDB tied to system ground). No internal timing coordination exists between channels, so external control logic must manage overlap prevention - unlike HS/LS variants such as SI8233AB-D-IS.
What certifications apply to SI8235AB-D-IS?
SI8235AB-D-IS carries UL 1577 recognition (2.5 kVRMS), CSA 62368-1 (reinforced insulation), VDE 60747-17 (basic insulation), and CQC GB4943.1 approval. It is also AEC-Q100 qualified (Grade 1), with AIAG-compliant PPAP documentation and IMDS/CAMDS material declarations - confirming suitability for automotive onboard chargers and industrial safety-critical systems.
SI8235AB-D-IS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 20kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 60ns, 60ns
- Pulse Width Distortion (Max):
- 5.6ns
- Rise / Fall Time (Typ):
- 12ns, 12ns (Max)
- Current - Output High, Low:
- 2A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 6.5V ~ 24V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
SI8235AB-D-IS FAQ
1.How can I place an order for SI8235AB-D-IS through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8235AB-D-IS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8235AB-D-IS reliable?
The price and inventory of SI8235AB-D-IS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8235AB-D-IS is usually 5 days.
3.What payment methods are accepted for SI8235AB-D-IS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8235AB-D-IS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8235AB-D-IS?
SI8235AB-D-IS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8235AB-D-IS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8235AB-D-IS?
For technical support, including SI8235AB-D-IS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8235AB-D-IS requirements.
6.How does Aetrix verify that SI8235AB-D-IS is sourced from the original manufacturer or authorized distributors?
All SI8235AB-D-IS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8235AB-D-IS meets industry standards.
7.What is the process for return or replacement of SI8235AB-D-IS?
All SI8235AB-D-IS units undergo pre-shipment inspection (PSI). If there is an issue with SI8235AB-D-IS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8235AB-D-IS part is unused and in its original packaging.
Return procedure for SI8235AB-D-IS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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