Skyworks Solutions Inc. SI8235AC-AS1R

Overview

SI8235AC-AS1R from Skyworks Solutions is a dual-channel isolated gate driver IC with 4.0 A peak output current per channel, 3.75 kVRMS input-to-output isolation, and TTL-compatible dual-input (VIA/VIB) configuration. It operates across –40°C to +125°C, supports up to 8 MHz switching frequency, and delivers fast 45 ns propagation delay - designed for high-reliability isolated MOSFET/IGBT drive in automotive onboard chargers and industrial inverters.

For engineers reviewing the SI8235AC-AS1R datasheet, SI8235AC-AS1R pinout, SI8235AC-AS1R application, or SI8235AC-AS1R equivalent, this page provides verified technical context, package mapping, functional truth table behavior, automotive-grade qualification evidence (AEC-Q100), and real-world design implications of its dual-driver architecture, programmable UVLO (5 V), and absence of dead-time control - critical for half-bridge gate drive integrity and system-level fault tolerance.

Technical Context

The SI8235AC-AS1R implements two fully independent, galvanically isolated driver channels using Skyworks' proprietary silicon RF isolation barrier, enabling operation with separate or common grounds on output sides. Each channel features TTL-compatible inputs with >400 mV hysteresis and independent undervoltage lockout (UVLO) monitoring at 5 V threshold.

Unlike high-side/low-side variants (e.g., SI8233/34), the SI8235AC-AS1R lacks internal overlap protection and programmable dead time - confirmed by truth table behavior showing immediate, uncoupled output transitions on VIA/VIB edges. Its SOIC-16 narrow-body package supports creepage/clearance compliant with 3.75 kVRMS reinforced insulation per UL1577 and IEC 62368-1.

Key Specifications

Pinout & Package

SI8235AC-AS1R uses a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width, 10.3 mm length) with 1.27 mm pitch and 0.2 mm lead thickness - optimized for high-density PCB layouts while maintaining 3.75 kVRMS isolation clearance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Compared with SI8235BD-AS1R, SI8235AC-AS1R offers lower UVLO (5 V) for tighter control of early-stage power-up but reduced isolation (3.75 vs. 5.0 kVRMS); versus UCC5390SCDR, it provides AEC-Q100 qualification and superior noise immunity via RF modulation, at the expense of missing Miller clamping.

Availability

SI8235AC-AS1R is available at Aetrix Electronics and suitable for automotive onboard chargers, solar inverters, industrial motor drives, and battery management systems requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.

Supply support for SI8235AC-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si823x family was engineered specifically for high-reliability isolated gate driving in automotive and industrial power conversion - emphasizing robustness, fast propagation, and certified safety compliance over generic signal isolation.

FAQ

What is the isolation voltage rating of the SI8235AC-AS1R and which safety standards does it meet?

The SI8235AC-AS1R has a 3.75 kVRMS input-to-output isolation rating, validated per UL 1577. It meets reinforced insulation requirements of IEC 62368-1 and IEC 60601-1 (2 MOPP), and is certified by CSA and CQC for use in automotive and industrial equipment. This rating supports safe operation in 400 VAC mains-connected systems and 800 VDC battery architectures.

Does the SI8235AC-AS1R include dead-time control or overlap protection?

No, the SI8235AC-AS1R does not include dead-time control or overlap protection. As a dual-driver variant (not high-side/low-side), it lacks the DT pin and internal logic for forced delay between VOA and VOB transitions. Its truth table confirms immediate, independent output response to VIA and VIB - making external dead-time generation mandatory in half-bridge topologies using SI8235AC-AS1R.

What is the UVLO threshold for the SI8235AC-AS1R and how does it affect system startup?

The SI8235AC-AS1R has a 5 V UVLO threshold on VDDI, VDDA, and VDDB. All outputs remain low until each respective supply exceeds 5 V, preventing erratic gate drive during brown-out conditions. This ensures deterministic startup in automotive systems where 5 V rails stabilize before higher-voltage gate supplies - a key requirement for OBC and traction inverter reliability.

Is the SI8235AC-AS1R pin-compatible with other Si823x family members like SI8235BD-AS1R?

Yes, the SI8235AC-AS1R is pin-compatible with SI8235BD-AS1R and SI8235AB-AS1R - all share identical SOIC-16 narrow-body pinout, terminal functions, and mechanical footprint. Differences are limited to isolation rating (3.75 vs. 5.0 vs. 2.5 kVRMS) and UVLO threshold (5 V vs. 8 V vs. 5 V), allowing drop-in replacement where safety and startup timing requirements align.

How does the SI8235AC-AS1R achieve noise immunity in high-dV/dt environments such as motor drives?

The SI8235AC-AS1R achieves noise immunity through RF-based isolation (not optocoupler or capacitive), delivering >400 mV input hysteresis and 45 ns propagation delay with <1 ns channel skew. Its differential RF modulation rejects common-mode transients up to 100 kV/µs - validated in automotive EMC testing - ensuring reliable gate control in 650 V SiC inverter stages with dV/dt exceeding 50 V/ns.