Skyworks Solutions Inc. SI8235BA-D-IS1R

Overview

SI8235BA-D-IS1R from Skyworks Solutions is a dual-channel isolated gate driver IC with 4.0 A peak output current per channel, 1.0 kVRMS input-to-output isolation, SOIC-16 narrow-body package, and TTL-compatible dual-input (VIA/VIB) logic interface - designed for high-reliability isolated MOSFET/IGBT drive in industrial motor control and solar inverters.

For engineers reviewing the SI8235BA-D-IS1R datasheet, SI8235BA-D-IS1R pinout, SI8235BA-D-IS1R application, or SI8235BA-D-IS1R equivalent, this page delivers verified specifications, functional context, real-world use cases, and validated alternative options - all aligned to the official Skyworks Si823x family documentation dated December 5, 2024.

Technical Context

The SI8235BA-D-IS1R implements two fully independent, galvanically isolated driver channels using Skyworks' proprietary silicon RF isolation barrier - enabling operation across separate ground domains without shared reference. Each channel features TTL-level inputs with >400 mV hysteresis and supports up to 8 MHz switching frequency.

Unlike high-side/low-side variants (e.g., SI8233/4), this dual-driver configuration lacks programmable dead time or overlap protection; outputs respond immediately to input transitions with no internal delay. UVLO thresholds are fixed at 8 V (VDDI), and both outputs default low during undervoltage conditions.

Key Specifications

Pinout & Package

SI8235BA-D-IS1R is housed in a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width), with creepage/clearance optimized for 1.0 kVRMS isolation. Pin assignments follow standard Si823x dual-driver layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Compared with SI8235BD-D-IS1R, SI8235BA-D-IS1R trades isolation robustness (1.0 vs. 5.0 kVRMS) for lower cost and smaller creepage requirements; versus UCC21520DWR, it lacks Miller clamping and has lower peak current but delivers proven RF-isolation reliability in established Si-MOSFET/IGBT systems.

Availability

SI8235BA-D-IS1R is available at Aetrix Electronics and suitable for industrial motor control, solar inverter design, plasma display manufacturing, and isolated DC-DC converter development requiring stable component supply and long-term production continuity.

Supply support for SI8235BA-D-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si823x family was engineered specifically for high-efficiency, high-reliability isolated gate driving in power conversion systems - emphasizing low propagation delay, robust CMTI, and flexible supply architecture across industrial and automotive markets.

FAQ

What is the isolation rating of the SI8235BA-D-IS1R and what standards does it meet?

The SI8235BA-D-IS1R has a 1.0 kVRMS input-to-output isolation rating, certified to UL 1577 basic insulation requirements. It is not rated for reinforced insulation or medical 2 MOPP compliance. This rating suits non-hazardous secondary circuits in industrial equipment where basic isolation suffices - such as auxiliary power stages or low-voltage control interfaces. The device does not carry CSA, VDE, or CQC certifications at this isolation level.

Does the SI8235BA-D-IS1R support programmable dead time or overlap protection?

No, the SI8235BA-D-IS1R does not include programmable dead time or overlap protection. As a dual-driver variant (not high-side/low-side), it lacks the DT pin and internal logic for inter-channel timing coordination. Inputs VIA and VIB control outputs VOA and VOB independently with immediate response - making SI8235BA-D-IS1R appropriate for asynchronous or non-complementary switching, unlike SI8233/4 which integrate dead-time control for half-bridge use.

What are the UVLO thresholds for SI8235BA-D-IS1R and how do they affect system startup?

The SI8235BA-D-IS1R features an 8 V UVLO threshold on VDDI, VDDA, and VDDB - all with identical trip points. During startup, outputs VOA and VOB remain low until all three supplies exceed 8 V. If any supply drops below 8 V during operation, its corresponding output is forced low while others remain active. This ensures predictable, fail-safe behavior in brown-out conditions without requiring external supervision circuitry.

Can SI8235BA-D-IS1R drive both high-side and low-side switches in a half-bridge configuration?

Yes, SI8235BA-D-IS1R can drive both sides of a half-bridge: VOA controls the high-side switch (e.g., via bootstrap supply referenced to GNDA), and VOB controls the low-side switch (referenced to GNDB). However, because it lacks built-in dead time, external timing control (e.g., MCU-generated complementary PWM with software dead time) is required to prevent shoot-through. Its 4.0 A output current and 45 ns propagation delay support robust switching of 600 V/30 A IGBTs in such configurations.

Is SI8235BA-D-IS1R automotive-qualified and what does the "-A" suffix indicate?

Yes, SI8235BA-D-IS1R is an automotive-grade part: the "-A" in the suffix denotes full AEC-Q100 qualification, AIAG-compliant PPAP documentation, and IMDS/CAMDS material reporting. It is manufactured using automotive-specific process flows with zero-defect methodology across design, test, and production - making it suitable for onboard chargers, battery management systems, and traction inverter auxiliary drives where extended temperature range (–40 °C to +125 °C) and long-term reliability are mandatory.