Skyworks Solutions Inc. SI8235BB-AS1R

Overview

SI8235BB-AS1R from Skyworks Solutions is a dual-channel isolated gate driver IC with 4.0 A peak output current per channel, 2.5 kVRMS input-to-output isolation, and SOIC-16 narrow-body package. It features independent TTL-compatible inputs (VIA/VIB), no internal dead time, and operates across –40°C to +125°C for driving high-side/low-side MOSFETs or IGBTs in half-bridge inverters.

For engineers reviewing the SI8235BB-AS1R datasheet, SI8235BB-AS1R pinout, SI8235BB-AS1R application, or SI8235BB-AS1R equivalent, this page delivers verified specifications, automotive-grade qualification status (AEC-Q100), isolation barrier performance, UVLO thresholds, and real-world use context for power electronics design validation and BOM selection.

Technical Context

The SI8235BB-AS1R implements two fully isolated driver channels using Skyworks' proprietary silicon RF-based isolation barrier, enabling operation with separate or common grounds on output sides. Each channel supports independent logic-level inputs (VIA/VIB) and delivers up to 4.0 A peak source/sink current at VDDA/VDDB = 12 V, with propagation delay ≤30 ns (H→L/L→H) and rise/fall times ≤10 ns under 100 pF load.

It lacks programmable dead time and overlap protection-features reserved for HS/LS variants like SI8233/34-making it suitable for synchronous rectification, dual-switch topologies, or independently controlled gate drives where timing coordination is handled externally. UVLO thresholds are fixed at 8 V (rising) and 7 V (falling) on all supply rails (VDDI, VDDA, VDDB).

Key Specifications

Pinout & Package

SOIC-16 narrow-body package (7.5 mm × 5.3 mm × 2.35 mm), RoHS-compliant, 260 °C peak reflow profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Compared with SI8235BD-AS, SI8235BB-AS1R trades 2.5 kVRMS isolation for narrower SOIC-16 packaging and lower unit cost-ideal for cost-sensitive 800 V systems. Against UCC5390SCDR, it omits Miller clamping but delivers superior thermal stability and AEC-Q100 production traceability for automotive OEM programs.

Availability

SI8235BB-AS1R is available at Aetrix Electronics and suitable for motor control systems, solar inverters, battery management systems, and onboard chargers requiring stable component supply across automotive and industrial production cycles.

Supply support for SI8235BB-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for wireless, automotive, and industrial markets.

The Si823x family was designed specifically for high-reliability isolated gate driving in electric vehicle powertrains and renewable energy systems, leveraging proprietary silicon RF isolation to replace aging optocoupler-based architectures.

FAQ

What is the isolation voltage rating of the SI8235BB-AS1R?

The SI8235BB-AS1R has a certified 2.5 kVRMS input-to-output isolation rating per UL1577, validated for one-minute withstand testing. This rating supports reinforced insulation per IEC 62368-1 in 1000 VDC system-level applications such as solar inverters and EV battery chargers. The isolation barrier uses Skyworks' monolithic silicon RF technology-not optocouplers or capacitive coupling-and maintains integrity across –40°C to +125°C.

Does the SI8235BB-AS1R include programmable dead time?

No, the SI8235BB-AS1R does not include programmable dead time or overlap protection circuitry. As a dual-driver variant (not HS/LS), it provides direct, immediate mapping from VIA/VIB inputs to VOA/VOB outputs with no internal delay. Dead time must be implemented externally via controller logic or gate drive waveform shaping. This differs from SI8233/34 HS/LS variants, which integrate DT pins and overlap recovery.

What are the UVLO thresholds for SI8235BB-AS1R supply rails?

The SI8235BB-AS1R specifies identical undervoltage lockout thresholds across all three supply domains: VDDI, VDDA, and VDDB each have a rising threshold of 8.0 V ±0.3 V and a falling threshold of 7.0 V ±0.3 V. When any supply falls below its UVLO threshold, the corresponding output (VOA or VOB) is forced low until the rail recovers and remains above threshold for tSTART (≥10 µs). Input-side UVLO also disables both outputs regardless of output-side supply status.

Is the SI8235BB-AS1R qualified for automotive applications?

Yes, the SI8235BB-AS1R is an automotive-grade part, indicated by the "-AS" suffix and full AEC-Q100 Grade 1 qualification (–40°C to +125°C). It is manufactured using automotive-specific process flows, supported by AIAG-compliant PPAP documentation, IMDS/CAMDS material declarations, and zero-defect statistical controls throughout wafer fabrication, assembly, and test. The "R" suffix denotes tape-and-reel packaging for SMT production.

Can SI8235BB-AS1R drive SiC MOSFETs directly?

Yes, the SI8235BB-AS1R can directly drive commercial 650 V and 1200 V SiC MOSFETs. Its 4.0 A peak source/sink current, <10 ns rise/fall times into 1 nF load, and <30 ns propagation delay meet the dynamic gate drive requirements of devices like C3M0065090D or SCT3040KL. For optimal performance, pair with low-inductance gate loop layout and 10–22 Ω series gate resistors to dampen ringing without compromising switching speed.