Skyworks Solutions Inc. SI8235BB-C-IS

Overview

SI8235BB-C-IS from Silicon Labs is a dual-channel isolated gate driver with 4.0 A peak output current per channel, 5 kVRMS input-to-output isolation (wide-body SOIC-16), 60 ns max propagation delay, and operation from –40 to +125 °C. It serves as a high-reliability replacement for optocoupler-based gate drive in half-bridge IGBT/MOSFET power stages of solar inverters and industrial motor drives.

For engineers reviewing the SI8235BB-C-IS datasheet, SI8235BB-C-IS pinout, SI8235BB-C-IS application, or SI8235BB-C-IS equivalent, this page delivers verified specifications, safety-certified isolation performance, dual-driver functional context, thermal derating data, and direct alternative part comparisons - all aligned to the official Rev. 1.5 datasheet and ordering guide.

Technical Context

The SI8235BB-C-IS implements two independent RF-modulated isolated channels using Silicon Labs' proprietary silicon-dielectric barrier, enabling simultaneous high-side and low-side gate control without shared ground constraints. Each channel supports TTL-compatible inputs with >400 mV hysteresis and operates with separate VDDI (2.7–5.5 V), VDDA, and VDDB (6.5–24 V) supplies.

It lacks programmable dead time and overlap protection (unlike Si8230/1/3/4), and features no PWM-input logic - instead accepting independent VIA/VIB control signals. Its 4.0 A sink/source capability, 12 ns typical rise/fall time (CL = 200 pF), and 45 kV/µs CMTI make it suitable for fast-switching, noise-immune power conversion topologies.

Key Specifications

Pinout & Package

SI8235BB-C-IS is housed in a RoHS-compliant 16-pin wide-body SOIC package (WBSOIC-16) with 1.27 mm pitch, 10.3 mm minimum creepage/clearance, and 5 kVRMS isolation rating. Pin 1 is marked with a dot; pins 1–8 form the input-side domain, pins 9–16 the output-side domain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel isolated gate drive applications.

Compared with ADUM4223BRIZ and UCC21520CDWR, SI8235BB-C-IS delivers superior electromagnetic robustness (45 kV/µs CMTI), full AEC-Q100 Grade 1 validation, and higher input hysteresis - making it optimal for high-reliability, high-noise industrial and renewable energy systems where long-term field stability is critical.

Availability

SI8235BB-C-IS is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, and isolated DC-DC power supplies requiring stable component supply, long-lifecycle assurance, and certified reinforced insulation.

Supply support for SI8235BB-C-IS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Silicon Labs is a fabless semiconductor company specializing in timing, isolation, and mixed-signal ICs for industrial, automotive, and communications infrastructure.

The Si823x product line was engineered to replace optocouplers in high-reliability power gate drive applications - delivering higher speed, tighter timing, longer lifetime, and certified safety isolation without LED aging or temperature drift.

FAQ

What is the isolation voltage rating of the SI8235BB-C-IS?

The SI8235BB-C-IS is rated for 5 kVRMS input-to-output isolation (1 minute, UL 1577), validated for reinforced insulation per IEC 60950-1, IEC 60601-1, and VDE 0884-5. This rating applies specifically to the wide-body SOIC-16 package variant (WBSOIC-16), which provides 10.3 mm creepage and clearance - meeting safety requirements for 600 VRMS working voltage systems. SI8235BB-C-IS achieves this through Silicon Labs' proprietary silicon-dielectric isolation barrier.

Does the SI8235BB-C-IS support programmable dead time?

No, the SI8235BB-C-IS does not support programmable dead time or overlap protection. As confirmed in Table 9 of the Si823x datasheet Rev. 1.5, only Si8230/1/3/4 variants include these features. SI8235BB-C-IS is a dual-driver configuration (Si8235) with independent VIA/VIB inputs and immediate output response - meaning dead time must be implemented externally via controller logic or RC networks. This architecture prioritizes minimal propagation delay and timing predictability over integrated timing control.

What is the maximum operating temperature for the SI8235BB-C-IS?

The SI8235BB-C-IS is specified for continuous operation from –40 °C to +125 °C ambient temperature and is AEC-Q100 Grade 1 qualified. Its thermal resistance (θJA) is 100 °C/W in the wide-body SOIC-16 package. At maximum 24 V VDDA/VDDB and full 4.0 A switching, junction temperature must remain ≤150 °C - requiring appropriate PCB copper area and airflow. Derating curves in Figures 7–8 of the datasheet define safe current limits versus case temperature.

Can the SI8235BB-C-IS drive SiC MOSFETs?

Yes, the SI8235BB-C-IS is suitable for driving discrete SiC MOSFETs, particularly those with Qg ≤ 100 nC at 20 V VGS. Its 4.0 A peak sink current, 12 ns typical rise/fall time (CL = 200 pF), and 45 kV/µs CMTI enable clean, fast switching with minimal Miller-induced oscillation. However, designers must ensure gate loop inductance is minimized and negative turn-off bias (e.g., –2 V to –5 V) is provided externally if required by the SiC device's datasheet - SI8235BB-C-IS does not generate negative voltage internally.

What safety certifications apply to the SI8235BB-C-IS?

The SI8235BB-C-IS holds UL 1577 recognition (File E257455, up to 5000 VRMS), CSA Component Acceptance Notice 5A (IEC 60950-1, 61010-1, 60601-1), VDE certification to IEC 60747-5-5 and EN 60950-1, and CQC approval to GB4943.1-2011. All certifications are specific to the 5 kVRMS wide-body SOIC-16 variant and cover reinforced insulation for up to 600 VRMS working voltage. Certification documentation is publicly available via each agency's file number.