Skyworks Solutions Inc. SI8235BC-D-IS1

Overview

SI8235BC-D-IS1 from Skyworks Solutions is a dual-channel isolated gate driver IC with 4.0 A peak output current per channel, 3.75 kVRMS input-to-output isolation, and SOIC-16 narrow-body package. It features independent TTL-compatible inputs (VIA/VIB), no internal dead time, and operates across –40°C to +125°C for driving high-side/low-side MOSFETs or IGBTs in half-bridge power stages.

For engineers reviewing the SI8235BC-D-IS1 datasheet, SI8235BC-D-IS1 pinout, SI8235BC-D-IS1 application, or SI8235BC-D-IS1 equivalent, this page delivers verified electrical parameters, isolation safety certifications (UL, VDE, CSA), automotive-grade qualification status, and real-world use context for motor control, solar inverters, and onboard chargers.

Technical Context

The SI8235BC-D-IS1 implements two fully isolated driver channels using Skyworks' proprietary silicon RF-based isolation barrier, enabling up to 5 kVRMS withstand voltage and 45 ns propagation delay. Each channel supports independent logic-level inputs with >400 mV hysteresis and operates with VDDI = 4.5–24 V and VDDA/VDDB = 10–24 V.

Unlike HS/LS variants (e.g., SI8233/4), the SI8235BC-D-IS1 is a dual-driver configuration-VOA and VOB respond directly and simultaneously to VIA and VIB without overlap protection or programmable dead time. Its outputs are capable of sourcing 4.0 A and sinking up to 7.0 A at 12 V supply, supporting fast-switching SiC and GaN power devices.

Key Specifications

Pinout & Package

SI8235BC-D-IS1 uses a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width, 10.3 mm length) with 0.050" pitch and 260 °C reflow compatibility. Creepage distance meets 3.75 kVRMS requirements per IEC 60664-1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Compared with SI8220BD-D-IS1, SI8235BC-D-IS1 integrates both channels in one package, reducing PCB area and interconnect risk; versus ADUM4223BRIZ, it delivers 2.5× faster propagation and tighter channel-to-channel matching for high-frequency resonant topologies.

Availability

SI8235BC-D-IS1 is available at Aetrix Electronics and suitable for motor control systems, solar inverters, onboard chargers, and industrial UPS requiring stable component supply with automotive-grade traceability and long-term lifecycle support.

Supply support for SI8235BC-D-IS1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.

The Si823x family was designed specifically for high-reliability isolated gate driving in power conversion systems, targeting automotive electrification, renewable energy, and industrial automation applications demanding robustness, speed, and safety certification.

FAQ

What is the isolation rating and safety certification status of SI8235BC-D-IS1?

The SI8235BC-D-IS1 provides 3.75 kVRMS input-to-output isolation per UL 1577 and is certified to CSA 62368-1 (reinforced insulation), VDE 60747-17 (basic insulation), and CQC GB4943.1. It meets reinforced insulation requirements for functional safety in industrial and automotive applications up to 1000 VDC working voltage. SI8235BC-D-IS1 is not rated for medical 2 MOPP use.

Does SI8235BC-D-IS1 include built-in dead time or overlap protection?

No, SI8235BC-D-IS1 is a dual-driver variant and does not implement internal dead time or overlap protection logic. Its outputs VOA and VOB respond immediately and independently to VIA and VIB inputs. This design enables precise synchronous control required in resonant converters and phase-shifted topologies where external timing control is preferred. SI8235BC-D-IS1 differs from HS/LS variants like SI8233/4 in this regard.

What are the UVLO thresholds and behavior of SI8235BC-D-IS1 during power-up?

SI8235BC-D-IS1 has an input-side UVLO threshold of 8 V (rising) and 7 V (falling) on VDDI. During power-up, outputs VOA and VOB remain low until VDDI exceeds 8 V for tSTART (≥1 µs). If VDDI drops below 7 V, outputs default low within 1 µs. Each output domain (VDDA/VDDB) has independent UVLO monitoring - VOA stays low if VDDA falls below its 8 V threshold, even if VDDI remains valid.

Can SI8235BC-D-IS1 drive SiC MOSFETs directly, and what is its maximum recommended switching frequency?

Yes, SI8235BC-D-IS1 can directly drive discrete SiC MOSFETs with Qg ≤ 50 nC using its 4.0 A source / 7.0 A sink capability. With 15 ns typical propagation delay and <10 ns channel-to-channel skew, it supports reliable operation up to 2 MHz in hard-switched topologies and >5 MHz in resonant applications. Layout-dependent parasitics-not the IC itself-typically limit practical frequency in production designs.

Is SI8235BC-D-IS1 qualified for automotive applications, and what documentation is available?

Yes, SI8235BC-D-IS1 is AEC-Q100 Grade 1 qualified (–40°C to +125°C) and supported with AIAG-compliant PPAP documentation, IMDS/CAMDS material declarations, and full automotive process flow validation. The industrial-grade SI8235BC-D-IS1 shares identical electrical specs and marking with its automotive counterpart SI8235BC-AS1, differing only in manufacturing traceability and test coverage.