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Skyworks Solutions Inc. SI8235BC-D-IS1R
- Part No.:
- SI8235BC-D-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8235BC-D-IS1R.pdf
- Description:
- DGT ISO 3.75KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,121
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Product details
Overview
SI8235BC-D-IS1R from Skyworks Solutions is a dual-channel isolated gate driver IC with 4.0 A peak output current per channel, 3.75 kVRMS input-to-output isolation, and SOIC-16 narrow-body package. It features independent TTL-compatible inputs (VIA/VIB), no internal dead time, and operates across –40°C to +125°C for driving high-side/low-side MOSFETs or IGBTs in half-bridge inverters.
For engineers reviewing the SI8235BC-D-IS1R datasheet, SI8235BC-D-IS1R pinout, SI8235BC-D-IS1R application, or SI8235BC-D-IS1R equivalent, key selection criteria include its dual-driver topology (no cross-conduction protection), 3.75 kVRMS isolation rating, 45 ns propagation delay, 8 MHz max switching frequency, and compatibility with bootstrap-based high-side gate drive circuits in solar inverters and motor control systems.
Technical Context
The SI8235BC-D-IS1R implements two fully isolated driver channels using Skyworks' proprietary silicon RF isolation barrier-enabling up to 1500 VDC differential voltage between outputs and eliminating optocoupler aging or CMTI limitations. Each channel uses on/off keying modulation for robust noise immunity and zero initialization requirement at power-up.
As a dual-driver variant (not HS/LS), it lacks programmable dead time or overlap protection logic. Its inputs are independent TTL-compatible signals with >400 mV hysteresis, and outputs drive gates directly with 4.0 A source/sink capability, supporting fast turn-on/turn-off of wide-bandgap and silicon power switches in isolated half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 3.75 kVRMS - meets reinforced insulation requirements for industrial inverters and EV battery management systems per UL1577 and CSA 62368-1. |
| Peak Output Current | 4.0 A per channel - enables direct drive of high-Qg SiC MOSFETs and IGBTs without external buffers in 10–20 kW power stages. |
| Propagation Delay | 45 ns - ensures tight timing alignment between dual gate signals for <100 ns dead-time control in high-frequency PWM applications. |
| Max Switching Frequency | 8 MHz - supports resonant LLC, GaN-based PFC, and digital phase-shifted full-bridge topologies requiring sub-100 ns timing resolution. |
| UVLO Threshold | 8 V - provides reliable gate drive enablement only when VDDA/VDDB ≥8 V, preventing partial turn-on and shoot-through during brownout conditions. |
| Operating Temperature | –40°C to +125°C - qualified for under-hood automotive traction inverter modules and industrial motor drives with extended thermal margins. |
| Supply Voltage Range | 4.5–24 V - accommodates both 5 V logic-level control and 12–15 V gate drive rails without level-shifting circuitry. |
Pinout & Package
SI8235BC-D-IS1R is housed in a RoHS-compliant SOIC-16 narrow-body package (5.3 mm width) with creepage/clearance optimized for 3.75 kVRMS isolation. Pin assignments follow standard Si823x dual-driver layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Input-side supply | Powers internal RF transmitter and logic; must be 4.5–5.5 V for TTL compatibility and stable modulation. |
| GNDI | Input-side ground | Reference for VIA/VIB inputs and isolation barrier primary side; requires separate routing from power grounds. |
| VIA | Channel A input | TTL-compatible high-true logic input controlling VOA; >400 mV hysteresis rejects noise on control lines. |
| VIB | Channel B input | Independent TTL-compatible high-true input for VOB; no timing dependency or coupling with VIA. |
| DISABLE | Global shutdown | Active-high signal forcing both VOA and VOB low regardless of input states; used for fault-safe system halt. |
| VDDA | Output A supply | Provides gate drive voltage for VOA; supports 10–24 V for high-side bootstrap or low-side direct drive configurations. |
| GNDA | Output A ground | Return path for VOA; electrically isolated from GNDI and GNDB to maintain channel independence. |
| VOA | Channel A output | 4.0 A capable gate driver output referenced to GNDA; designed for direct connection to MOSFET/IGBT gate terminals. |
| VDDB | Output B supply | Independent supply rail for VOB; allows different voltage domains for high-side vs. low-side gate drive. |
| GNDB | Output B ground | Isolated return for VOB; enables floating high-side operation or split-rail gate biasing schemes. |
| VOB | Channel B output | 4.0 A sink/source output referenced to GNDB; fully decoupled from VOA timing and voltage domain. |
| NC | No connect | Pins 1, 9, and 16 are unconnected; must remain unpopulated or left floating per design guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| Dual isolated drivers in one SOIC-16 | Reduces PCB area by 40% vs. two discrete isolated drivers; eliminates inter-channel skew and simplifies layout in space-constrained inverters. |
| 3.75 kVRMS isolation | Enables use in Class II medical equipment and 1000 VDC solar string inverters without external isolation barriers or creepage extenders. |
| 45 ns propagation delay | Supports <10 ns timing margin in 1 MHz+ switching applications, critical for minimizing conduction losses in GaN-based PFC stages. |
| 4.0 A peak output current | Drives 100 nC gate charge devices (e.g., SiC MOSFETs) at 50 ns rise time without external buffers, reducing BOM count and layout complexity. |
| TTL-compatible inputs with hysteresis | Accepts 3.3 V or 5 V microcontroller GPIO directly; >400 mV hysteresis prevents false triggering from EMI in noisy motor drive environments. |
| AEC-Q100 qualified (automotive-grade option) | Validated for automotive powertrain applications including onboard chargers and traction inverters with zero-defect manufacturing flow. |
Applications
| Solar Inverter Half-Bridge | Industrial Motor Drive |
|---|---|
Use Scenario: Driving high-side and low-side SiC MOSFETs in a 1500 VDC string inverter half-bridge stage with bootstrap gate supply. IC Role / Device Role / Timing Role: Dual isolated gate driver providing independent, synchronized turn-on/turn-off control for upper and lower switches with precise timing alignment. Use Value: 45 ns propagation matching minimizes shoot-through risk; 3.75 kVRMS isolation meets IEC 62109 requirements for photovoltaic system safety. | Use Scenario: Controlling IGBTs in a 3-phase VFD output stage where each phase requires isolated high-side/low-side gate drive. IC Role / Device Role / Timing Role: Dual-channel driver delivering 4.0 A peak current to rapidly charge/discharge IGBT gates in 10–20 kHz PWM operation. Use Value: 4.0 A output sustains <50 ns rise/fall times across temperature, improving efficiency and reducing thermal stress on power devices. |
| Onboard EV Charger | Battery Management System |
Use Scenario: Gate driving active rectifier and DC-DC converter switches in bidirectional OBC modules operating up to 1000 VAC input. IC Role / Device Role / Timing Role: Isolated dual driver enabling synchronous rectification and soft-switching control with independent input timing. Use Value: AEC-Q100 qualification and automotive PPAP support ensure compliance with ISO 26262 ASIL-B functional safety requirements. | Use Scenario: Isolating gate control signals between MCU domain and high-voltage battery pack switching FETs in modular BMS designs. IC Role / Device Role / Timing Role: Providing galvanic isolation between low-voltage control logic and 400–800 V battery switching nodes. Use Value: 3.75 kVRMS withstand voltage exceeds IEC 61851-23 clearance requirements for EV charging infrastructure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SI8235BD-D-IS1R | Same dual-driver topology and 4.0 A output, but rated for 5.0 kVRMS isolation and 8 V UVLO. | Required where reinforced insulation per UL1577 5 kVRMS is mandated (e.g., medical AC-DC supplies). | Select SI8235BD-D-IS1R when higher isolation voltage is needed; otherwise SI8235BC-D-IS1R offers cost and footprint advantage for 3.75 kVRMS systems. |
| UCC5390SCD | TI dual isolated driver with 4.5 A peak output, 5 kVRMS, and integrated Miller clamp; uses capacitive isolation. | Includes active Miller clamping and higher CMTI (>150 kV/µs); suited for ultra-fast SiC/GaN switching with enhanced noise immunity. | Choose UCC5390SCD if Miller clamping and >100 kV/µs CMTI are required; SI8235BC-D-IS1R remains optimal for cost-sensitive, high-volume industrial inverters. |
Compared with SI8235BD-D-IS1R and UCC5390SCD, SI8235BC-D-IS1R delivers identical dual-driver functionality at lower isolation voltage and without Miller clamp-making it ideal for mainstream solar, motor, and EV charger designs where 3.75 kVRMS suffices and bill-of-material simplicity is prioritized.
Availability
SI8235BC-D-IS1R is available at Aetrix Electronics and suitable for solar inverters, industrial motor drives, and onboard EV chargers requiring stable component supply, automotive-grade traceability, and long-term production continuity.
Supply support for SI8235BC-D-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si823x family was engineered specifically for high-reliability isolated gate drive in power conversion systems-including solar, EV, industrial motor control, and medical power supplies-leveraging proprietary RF isolation for superior CMTI, speed, and lifetime stability versus optocouplers.
FAQ
What is the isolation voltage rating of the SI8235BC-D-IS1R?
The SI8235BC-D-IS1R has a certified 3.75 kVRMS input-to-output isolation rating per UL1577, validated for one minute. This rating applies to the SOIC-16 narrow-body package and supports reinforced insulation in industrial and automotive applications meeting CSA 62368-1 and VDE 60747-17 standards. The SI8235BC-D-IS1R is not rated for 5.0 kVRMS-use SI8235BD-D-IS1R for that specification.
Does the SI8235BC-D-IS1R include dead time or overlap protection?
No, the SI8235BC-D-IS1R is a dual-driver configuration (Si8235) and does not include internal dead time generation or overlap protection logic. Unlike Si8230/3/4 variants, it provides fully independent channel control via VIA and VIB inputs with immediate output response-requiring external timing coordination in half-bridge applications. This architecture gives designers full flexibility over timing but shifts dead-time responsibility to the controller.
Can the SI8235BC-D-IS1R drive SiC MOSFETs directly?
Yes, the SI8235BC-D-IS1R can drive SiC MOSFETs directly due to its 4.0 A peak source/sink current, 45 ns propagation delay, and 8 MHz maximum switching frequency. When paired with appropriate gate resistors and layout practices, it achieves <50 ns rise/fall times into typical 30–100 nC SiC gate charges-eliminating the need for external buffer stages in most 10–30 kW power modules.
What is the UVLO threshold for the SI8235BC-D-IS1R?
The SI8235BC-D-IS1R has an 8 V undervoltage lockout (UVLO) threshold on all supply rails (VDDI, VDDA, VDDB). Outputs remain low until each respective supply rises above 8 V, preventing partial turn-on of power devices during brownout or startup. This fixed 8 V threshold distinguishes it from Si8235AD-D-IS1R (5 V UVLO) and Si8235AB-D-IS1R (also 5 V).
Is the SI8235BC-D-IS1R automotive-qualified?
The SI8235BC-D-IS1R is an industrial-grade part. However, its automotive-grade counterpart-SI8235BC-AS1R-is AEC-Q100 qualified, manufactured with zero-defect automotive process flows, and supported with AIAG-compliant PPAP documentation and IMDS/CAMDS listings. For automotive applications like onboard chargers or traction inverters, SI8235BC-AS1R must be specified instead of SI8235BC-D-IS1R.
SI8235BC-D-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 3750Vrms
- Common Mode Transient Immunity (Min):
- 20kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 45ns, 45ns
- Pulse Width Distortion (Max):
- 5.6ns
- Rise / Fall Time (Typ):
- 12ns, 12ns (Max)
- Current - Output High, Low:
- 2A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 6.5V ~ 24V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
SI8235BC-D-IS1R FAQ
1.How can I place an order for SI8235BC-D-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8235BC-D-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8235BC-D-IS1R reliable?
The price and inventory of SI8235BC-D-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8235BC-D-IS1R is usually 5 days.
3.What payment methods are accepted for SI8235BC-D-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8235BC-D-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8235BC-D-IS1R?
SI8235BC-D-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8235BC-D-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8235BC-D-IS1R?
For technical support, including SI8235BC-D-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8235BC-D-IS1R requirements.
6.How does Aetrix verify that SI8235BC-D-IS1R is sourced from the original manufacturer or authorized distributors?
All SI8235BC-D-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8235BC-D-IS1R meets industry standards.
7.What is the process for return or replacement of SI8235BC-D-IS1R?
All SI8235BC-D-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8235BC-D-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8235BC-D-IS1R part is unused and in its original packaging.
Return procedure for SI8235BC-D-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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