Skyworks Solutions Inc. SI8235BD-C-ISR

Overview

SI8235BD-C-ISR from Silicon Labs is a dual-channel isolated gate driver IC with 4.0 A peak output current per channel, 5 kVRMS input-to-output isolation (SOIC-16 wide-body package), 60 ns max propagation delay, and operation from –40 to +125 °C. It serves as a high-reliability replacement for optocoupler-based gate drives in industrial inverters and motor control systems requiring reinforced insulation and high CMTI.

For engineers reviewing the SI8235BD-C-ISR datasheet, SI8235BD-C-ISR pinout, SI8235BD-C-ISR application, or SI8235BD-C-ISR equivalent, key selection criteria include its dual independent isolated outputs, programmable dead time capability (via external resistor), 45 kV/µs common-mode transient immunity, and compatibility with 12–24 V gate drive supplies for SiC/MOSFET/IGBT switching up to 8 MHz.

Technical Context

The SI8235BD-C-ISR implements RF-based on/off keying across a silicon isolation barrier-eliminating LED aging and temperature drift issues of optocouplers. Its dual-channel architecture provides fully independent input-to-output isolation paths, enabling separate ground domains for each output stage without shared reference constraints.

Unlike HS/LS variants (e.g., SI8233), the SI8235BD-C-ISR lacks overlap protection and programmable dead time circuitry; it operates as a true dual driver with immediate output response (no internal dead time) and TTL-compatible inputs with 400 mV hysteresis. Input-side supply range is 2.7–5.5 V; output-side supplies support 6.5–24 V per channel.

Key Specifications

Pinout & Package

SI8235BD-C-ISR is housed in a RoHS-compliant SOIC-16 wide-body package (10.3 mm × 10.3 mm, 2.3 mm height) with creepage/clearance ≥8.0 mm and reinforced insulation certified to IEC 60950-1, IEC 60601-1, and VDE 0884-5.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Compared with Si8235AD-C-ISR and ADuM4223BRIZ, the SI8235BD-C-ISR delivers superior isolation integrity (5 kVRMS vs. 2.5 kVRMS), higher CMTI (45 vs. 35 kV/µs), and AEC-Q100 qualification-making it the optimal choice for safety-critical industrial and automotive traction inverter designs requiring long-term reliability and regulatory compliance.

Availability

SI8235BD-C-ISR is available at Aetrix Electronics and suitable for industrial motor drives, solar inverters, and EV onboard chargers requiring stable component supply, long-lifecycle availability, and traceable sourcing from authorized channels.

Supply support for SI8235BD-C-ISR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Silicon Labs is a fabless semiconductor company specializing in precision timing, isolation, and mixed-signal ICs for industrial, automotive, and communications markets.

The Si823x product line was engineered to replace optocouplers in high-reliability gate drive applications-delivering superior timing accuracy, lifetime stability, and noise immunity using proprietary silicon RF isolation technology.

FAQ

What is the maximum switching frequency supported by the SI8235BD-C-ISR?

The SI8235BD-C-ISR supports up to 8 MHz switching frequency, enabled by its 60 ns maximum propagation delay, <12 ns rise/fall times (at CL = 200 pF), and 45 kV/µs common-mode transient immunity. This makes the SI8235BD-C-ISR suitable for high-frequency SiC and GaN-based power converters where precise edge timing and noise resilience are critical.

Does the SI8235BD-C-ISR include built-in dead time or overlap protection?

No, the SI8235BD-C-ISR does not include internal dead time generation or overlap protection circuitry. As a dual-driver variant (per Table 9), it provides immediate, independent output response to input signals-unlike HS/LS versions (e.g., SI8233/SI8234). Dead time must be implemented externally via controller logic or gate-drive transformer timing.

What safety certifications apply to the SI8235BD-C-ISR?

The SI8235BD-C-ISR holds UL 1577 recognition (5000 Vrms, 1 min), CSA Component Acceptance Notice 5A (IEC 60950-1, 61010-1, 60601-1), VDE certification to IEC 60747-5-5 and EN 60950-1, and CQC approval to GB4943.1. These cover reinforced insulation up to 600 Vrms working voltage and validate its use in medical, industrial, and grid-connected equipment.

Can the SI8235BD-C-ISR drive both N-channel and P-channel MOSFETs?

Yes-the SI8235BD-C-ISR outputs are non-inverting, rail-to-rail drivers capable of sourcing and sinking up to 4.0 A peak current. When configured with appropriate external gate resistors and level-shifted supplies, it can drive high-side P-channel MOSFETs or low-side N-channel devices. Its independent output grounds (GNDA/GNDB) allow flexible topology implementation including source-referenced high-side drive.

What is the recommended decoupling capacitance for the SI8235BD-C-ISR power supplies?

Silicon Labs recommends placing low-ESR capacitors as close as possible to each VDD pin: 1 µF ceramic + 10–100 µF bulk (e.g., tantalum or polymer) on VDDI, and 1 µF ceramic + 10 µF bulk on each of VDDA and VDDB. This minimizes high-frequency noise coupling and ensures stable gate drive under dynamic load conditions, especially at >1 MHz switching frequencies.