Skyworks Solutions Inc. SI8238BD-C-ISR

Overview

SI8238BD-C-ISR from Silicon Labs is a dual-channel isolated gate driver with 4.0 A peak output current per channel, 5 kVRMS input-to-output isolation (SOIC-16 wide-body package), 60 ns max propagation delay, and programmable dead time control. It serves as a high-reliability replacement for optocoupler-based gate drive in industrial inverters and motor control systems requiring reinforced insulation and AEC-Q100 qualification.

For engineers reviewing the SI8238BD-C-ISR datasheet, SI8238BD-C-ISR pinout, SI8238BD-C-ISR application, or SI8238BD-C-ISR equivalent, this page delivers verified specifications, SOIC-16 wide-body package mapping, dual-driver functional context, safety-certified isolation performance, and real-world design value for IGBT/MOSFET gate driving under high CMTI conditions.

Technical Context

The SI8238BD-C-ISR implements RF-based on/off keying across a silicon isolation barrier to deliver two independent, galvanically isolated output channels-each capable of sourcing 4.0 A and sinking 4.0 A peak current. Its architecture supports separate input-side (VDDI) and dual driver-side (VDDA/VDDB) supplies, enabling operation with up to 24 V on each driver rail and –40°C to +125°C ambient range.

It features integrated overlap protection, programmable dead time via external resistor (70–900 ns range), TTL-compatible inputs with 400 mV hysteresis, and transient immunity exceeding 45 kV/µs. Unlike HS/LS variants (e.g., SI8233), SI8238BD-C-ISR uses independent VIA/VIB inputs without PWM logic or internal cross-conduction prevention-requiring external timing coordination.

Key Specifications

Pinout & Package

SI8238BD-C-ISR is housed in a RoHS-compliant SOIC-16 wide-body package (10.3 mm × 7.5 mm, 2.65 mm height) with creepage/clearance ≥8.0 mm and 5 kVRMS isolation rating. Pin 1 is marked with a dot; pin numbering follows standard SOIC convention (counterclockwise from top-left corner).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Compared with Si8235AD-C-ISR, SI8238BD-C-ISR adds programmable dead time and overlap protection for safer synchronous rectification; compared with ISO5852SMDWR, it offers simpler biasing and lower propagation delay but no Miller clamp-making it optimal for space-constrained industrial inverters needing precise timing control without added external components.

Availability

SI8238BD-C-ISR is available at Aetrix Electronics and suitable for motor control systems, solar inverters, industrial UPS, and plasma display drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SI8238BD-C-ISR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Silicon Labs is a fabless semiconductor company specializing in precision timing, isolation, and mixed-signal ICs for industrial, automotive, and communications markets.

The Si823x product line delivers robust, high-speed isolated gate drivers targeting high-efficiency power conversion systems where reliability, CMTI, and safety certification are critical design requirements.

FAQ

What is the maximum switching frequency supported by the SI8238BD-C-ISR?

The SI8238BD-C-ISR supports up to 8 MHz switching frequency, enabled by its ≤60 ns maximum propagation delay and ≤12 ns rise/fall times (CL = 200 pF). This allows use in high-frequency resonant converters and GaN-based power supplies where timing precision directly impacts efficiency and EMI performance. The SI8238BD-C-ISR achieves this while maintaining 45 kV/µs CMTI and 5 kVRMS isolation integrity.

Does the SI8238BD-C-ISR include built-in undervoltage lockout (UVLO) protection?

Yes, the SI8238BD-C-ISR includes independent UVLO circuits on both input (VDDI) and output (VDDA/VDDB) supplies. VDDI UVLO triggers at 3.6 V (rising) / 3.3 V (falling); VDDA/VDDB UVLO thresholds are selectable (5 V, 8 V, 10 V, or 12.5 V) via part number variant. These protections disable outputs safely during brownout conditions, preventing partial gate drive that could damage power switches. The SI8238BD-C-ISR implements hysteresis to avoid oscillation near threshold.

Can the SI8238BD-C-ISR drive SiC MOSFETs directly?

Yes, the SI8238BD-C-ISR can drive discrete SiC MOSFETs directly due to its 4.0 A peak source/sink current, low output impedance (RON(SINK) = 1.0 Ω, RON(SOURCE) = 2.7 Ω), and fast 12 ns rise/fall times. It supports gate drive voltages up to 24 V, compatible with common SiC gate thresholds (2.5–4 V) and recommended turn-on/turn-off voltages (15–20 V / –5 V). Layout best practices (short traces, local decoupling) are required to maintain SI8238BD-C-ISR's 45 kV/µs CMTI performance with fast-switching SiC devices.

What safety certifications apply to the SI8238BD-C-ISR?

The SI8238BD-C-ISR holds UL 1577 (5000 Vrms, 1 min), CSA Component Notice 5A (IEC 60950-1, 61010-1, 60601-1), VDE IEC 60747-5-5 and EN 60950-1 (reinforced insulation), and CQC GB4943.1 certifications. These validate its 5 kVRMS isolation rating in SOIC-16 wide-body packaging for use in medical, industrial, and renewable energy equipment requiring reinforced insulation. Certification test data confirms compliance across all rated working voltages up to 600 VRMS.

How is dead time programmed on the SI8238BD-C-ISR?

Dead time on the SI8238BD-C-ISR is programmed using an external resistor (RDT) connected between the DT pin and VDDI. Values from 6 kΩ to 220 kΩ yield dead times from 70 ns to 900 ns, respectively. The SI8238BD-C-ISR uses this resistor to set an internal timer that enforces minimum off-time between VOA and VOB transitions-preventing shoot-through in synchronous rectifiers and half-bridge configurations. No additional circuitry or configuration registers are required.