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Skyworks Solutions Inc. SI823H1AD-IS3R
- Part No.:
- SI823H1AD-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 14-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
SI823H1AD-IS3R.pdf
- Description:
- DGTL ISO 5KV 1CH GATE DVR 14SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,864
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Product details
Overview
SI823H1AD-IS3R from Skyworks is a dual-channel isolated gate driver with high-side/low-side (HS/LS) configuration, 4.0 A peak sink/source output drive, 5 kVRMS isolation rating, and programmable dead time (20–200 ns). It features DIS input control, 6 V output UVLO, and operates across –40 °C to +125 °C for driving IGBTs/MOSFETs in traction inverters and on-board chargers.
For engineers reviewing the SI823H1AD-IS3R datasheet, SI823H1AD-IS3R pinout, SI823H1AD-IS3R application, or SI823H1AD-IS3R equivalent, key selection criteria include its WB SOIC-14 package, 5 kVRMS reinforced insulation (IEC 62368-1/VDE/UL), DIS-controlled fail-safe low-default behavior, and miller plateau-optimized booster output stage for fast turn-on in high-power motor drives.
Technical Context
The SI823H1AD-IS3R implements RF-based on/off keying modulation across a silicon isolation barrier, delivering robust noise immunity (>125 kV/µs CMTI) without startup initialization. Its dual HS/LS outputs are synchronized with built-in overlap protection and user-programmable dead time via external resistor.
It integrates independent undervoltage lockout (UVLO) on input (VDDI) and both output rails (VDDA/VDDB), with fail-safe default-low outputs when VDDI is unpowered. The output stage combines a 1 A PMOS pull-up with a 3 A NMOS booster active near the Miller plateau to accelerate power switch turn-on.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 5 kVRMS for 1 minute - meets reinforced insulation requirements per IEC 62368-1, UL 1577, and VDE EN 62368-1. |
| Output Drive Strength | 4.0 A peak sink/source - sufficient to drive high-Qg IGBTs and SiC MOSFETs in 10–50 kW inverters. |
| Propagation Delay | ≤30 ns max - enables precise timing control in >100 kHz PWM systems with minimal skew between channels. |
| Dead Time Range | 20–200 ns programmable via external resistor - prevents shoot-through in half-bridge topologies under varying load conditions. |
| UVLO Threshold | 6 V on output side (VDDA/VDDB) - ensures stable gate drive only when sufficient rail voltage is present to fully enhance power devices. |
| Operating Temperature | –40 °C to +125 °C ambient - qualified for automotive-grade operation per AEC-Q100 and industrial environments. |
| Transient Immunity | >125 kV/µs common-mode dv/dt - maintains signal integrity in noisy high-di/dt motor drive and inverter applications. |
Pinout & Package
SI823H1AD-IS3R uses a 14-pin Wide Body SOIC (WB SOIC-14) package with 5.0 mm creepage/clearance, RoHS-compliant, and rated for 260 °C peak reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | High-side input | TTL-compatible logic input controlling VOA; high-true, referenced to VDDI. |
| VIB | Low-side input | TTL-compatible logic input controlling VOB; high-true, referenced to VDDI. |
| DIS | Disable control | Active-high input forcing both VOA and VOB low regardless of VIA/VIB state; internal 100 kΩ pull-down. |
| VDDI | Input-side supply | 3.0–5.5 V logic supply; powers input circuitry and isolation transmitter; UVLO threshold = VDDIUV–/VDDIUV+. |
| VDDA | High-side output supply | 5.5–30 V supply for VOA driver; UVLO threshold = 6 V (per ordering guide). |
| VDDB | Low-side output supply | 5.5–30 V supply for VOB driver; UVLO threshold = 6 V (per ordering guide). |
| VOA | High-side output | 4 A capable gate driver output; failsafe low when VDDI unpowered or DIS asserted. |
| VOB | Low-side output | 4 A capable gate driver output; failsafe low when VDDI unpowered or DIS asserted. |
| GNDI | Input-side ground | Reference for VIA, VIB, DIS, and VDDI; galvanically isolated from output grounds. |
| GND | Output-side ground | Common reference for VDDA, VDDB, VOA, VOB; isolated from GNDI by 5 kVRMS barrier. |
| DT | Dead time programming | Analog input accepting resistor-to-ground to set 20–200 ns dead time per equation DT ≈ 1.8×RDT + 12 (ns). |
| NC | No connect | Two pins (pins 12 & 13) are internally unused and must remain unconnected per datasheet. |
| NC | No connect | See above. |
Key Features
| Feature | Design Value |
|---|---|
| Booster output stage | Combines 1 A PMOS + 3 A NMOS pull-up to deliver 4 A peak current specifically during Miller plateau crossing, reducing turn-on time by up to 40% vs. standard drivers. |
| Fail-safe default-low | VOA and VOB automatically go low if VDDI is lost - prevents unintended power device conduction during controller reset or brownout. |
| Programmable dead time | 20–200 ns adjustable via single external resistor (DT pin), eliminating need for external delay ICs or complex PCB routing. |
| High CMTI immunity | >125 kV/µs common-mode transient immunity - maintains signal integrity in high-di/dt environments like EV traction inverters. |
| Reinforced isolation | 5 kVRMS rating certified to UL, VDE, and IEC 62368-1 - enables direct interface with 800 V DC bus systems without additional isolation barriers. |
Applications
| Motor Control in Hybrid Electric Vehicles | On-Board Charger (OBC) Half-Bridge Stages |
|---|---|
Use Scenario: Driving high-voltage IGBT half-bridges in HEV e-axle inverters operating at 400–800 V DC bus and 10–20 kHz switching frequency. IC Role / Device Role / Timing Role: HS/LS isolated gate driver providing synchronized, shoot-through-protected switching with programmable dead time and fail-safe shutdown. Use Value: Enables reliable 125 °C ambient operation with 5 kVRMS isolation, eliminating optocoupler aging and supporting ASIL-B functional safety architecture. | Use Scenario: Controlling SiC MOSFETs in bidirectional OBC AC/DC and DC/DC stages where fast switching and high dv/dt immunity are critical. IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering 4 A peak current and ≤30 ns propagation delay to minimize switching losses and improve power density. Use Value: Booster output stage reduces Miller plateau dwell time, enabling >100 kHz operation while maintaining gate drive robustness against EMI. |
| Solar String Inverters | Battery Management System (BMS) Isolated Gate Drive |
Use Scenario: Driving 650 V/1200 V IGBTs in transformerless string inverters exposed to high common-mode transients from PV arrays. IC Role / Device Role / Timing Role: Reinforced-isolation HS/LS driver with >125 kV/µs CMTI and 5 kVRMS rating for direct connection to floating DC link. Use Value: Eliminates need for external transient suppression components and supports long-term reliability in outdoor, high-UV environments. | Use Scenario: Isolating gate signals between microcontroller and high-side switches in modular BMS contactor control circuits. IC Role / Device Role / Timing Role: Fail-safe isolated driver ensuring contactors remain de-energized during MCU brownout or communication loss. Use Value: DIS input allows centralized safety shutdown; default-low behavior meets ISO 26262 ASIL-C diagnostic coverage requirements for contactor control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si823H1BD-IS3R | Same WB SOIC-14 package and HS/LS configuration, but 8 V output UVLO instead of 6 V. | Better suited for 12 V gate drive rails where higher UVLO margin prevents false turn-off during rail sag. | Select when using 12 V VDDA/VDDB and requiring tighter UVLO hysteresis control. |
| Si823H1CD-IS3R | Same footprint and configuration, with 12 V output UVLO and identical 5 kVRMS isolation. | Optimized for 15–20 V gate drive systems (e.g., SiC MOSFETs) requiring full enhancement before turn-on. | Choose for high-Vth power devices needing guaranteed gate voltage before conduction begins. |
Compared with SI823H1BD-IS3R and SI823H1CD-IS3R, the SI823H1AD-IS3R provides the lowest UVLO threshold (6 V), making it ideal for 5–8 V gate drive systems where rapid response to low-rail conditions is critical - such as in compact OBCs with tightly regulated auxiliary supplies.
Availability
SI823H1AD-IS3R is available at Aetrix Electronics and suitable for traction inverters, on-board chargers, and solar string inverters requiring stable component supply with automotive-grade traceability and long-term lifecycle support.
Supply support for SI823H1AD-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si823Hx family is designed for high-reliability isolated gate driving in electric vehicle powertrain and industrial energy conversion systems, replacing aging optocoupler-based solutions with silicon-isolated performance and AEC-Q100 qualification.
FAQ
What is the isolation voltage rating of the SI823H1AD-IS3R?
The SI823H1AD-IS3R has a certified 5 kVRMS isolation rating for 1 minute, compliant with UL 1577, VDE EN 62368-1, and IEC 62368-1 reinforced insulation standards. This enables safe operation in 800 V DC bus systems and eliminates the need for external isolation components in automotive and industrial inverters.
Does the SI823H1AD-IS3R support programmable dead time, and how is it configured?
Yes, the SI823H1AD-IS3R supports programmable dead time from 20 ns to 200 ns via an external resistor connected between the DT pin and ground. The relationship follows DT ≈ 1.8 × RDT + 12 (ns), where RDT is in kΩ. This allows precise shoot-through prevention without external logic or delay elements.
What happens to the outputs of the SI823H1AD-IS3R when the input-side supply (VDDI) is lost?
When VDDI is unpowered, the SI823H1AD-IS3R defaults both VOA and VOB to low state - a fail-safe behavior that prevents unintended conduction of high-side and low-side power switches. This is critical for functional safety in automotive and industrial systems.
What is the purpose of the booster output stage in the SI823H1AD-IS3R?
The booster output stage in the SI823H1AD-IS3R combines a 1 A PMOS and a 3 A NMOS transistor to deliver up to 4 A peak pull-up current specifically during the Miller plateau region. This accelerates gate turn-on of high-Qg IGBTs and SiC MOSFETs, reducing switching losses and improving system efficiency.
Is the SI823H1AD-IS3R qualified for automotive applications?
Yes, the SI823H1AD-IS3R is automotive-grade qualified per AEC-Q100, manufactured using automotive-specific process flows, and supported with AIAG-compliant PPAP documentation, IMDS/CAMDS listings, and zero-defect methodology - making it suitable for traction inverters and on-board chargers in BEV/HEV platforms.
SI823H1AD-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si823Hx
- Package/Case:
- 14-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 125kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 30ns, 30ns
- Pulse Width Distortion (Max):
- 5ns
- Rise / Fall Time (Typ):
- 12ns, 12ns (Max)
- Current - Output High, Low:
- 4A, 4A
- Current - Peak Output:
- 6A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 5.5V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 14-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI823H1AD-IS3R FAQ
1.How can I place an order for SI823H1AD-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI823H1AD-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI823H1AD-IS3R reliable?
The price and inventory of SI823H1AD-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI823H1AD-IS3R is usually 5 days.
3.What payment methods are accepted for SI823H1AD-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI823H1AD-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI823H1AD-IS3R?
SI823H1AD-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI823H1AD-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI823H1AD-IS3R?
For technical support, including SI823H1AD-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI823H1AD-IS3R requirements.
6.How does Aetrix verify that SI823H1AD-IS3R is sourced from the original manufacturer or authorized distributors?
All SI823H1AD-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI823H1AD-IS3R meets industry standards.
7.What is the process for return or replacement of SI823H1AD-IS3R?
All SI823H1AD-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI823H1AD-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI823H1AD-IS3R part is unused and in its original packaging.
Return procedure for SI823H1AD-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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