Skyworks Solutions Inc. SI823H3BD-IS3R

Overview

SI823H3BD-IS3R from Skyworks is a dual-channel, high-side/low-side isolated gate driver with independent VIA/VIB inputs, 8 V UVLO, DIS control, deglitch filtering, and programmable 20–200 ns dead time. It delivers 4.0 A peak sink/source drive into power MOSFETs/IGBTs, supports 3.0–5.5 V input VDD and up to 30 V output supply, and operates across –40 °C to +125 °C in industrial motor control and isolated DC-DC converters.

For engineers reviewing the SI823H3BD-IS3R datasheet, SI823H3BD-IS3R pinout, SI823H3BD-IS3R application, or SI823H3BD-IS3R equivalent, key selection criteria include its 5 kVRMS reinforced isolation (UL/IEC/VDE certified), 30 ns max propagation delay, 125 kV/µs CMTI, WB SOIC-14 package, and fail-safe default-low behavior during input-side power loss.

Technical Context

The SI823H3BD-IS3R implements RF-based on/off keying across a silicon isolation barrier-enabling robust noise immunity without startup initialization. Its dual-channel architecture supports independent high-side and low-side switching with built-in overlap protection, eliminating external logic for shoot-through prevention.

Each channel features a two-stage output stage: a standard PMOS pull-up (1 A DC) plus an NMOS booster transistor delivering up to +3 A peak current during the Miller plateau region, enabling fast turn-on of high-Qg power switches. The DIS pin forces both outputs low unconditionally, while deglitch circuitry filters transient noise on both input and isolated output sides.

Key Specifications

Pinout & Package

SI823H3BD-IS3R is housed in a 14-pin Wide Body SOIC (WB SOIC-14) package with 5.0 mm creepage/clearance, RoHS-compliant, and rated for 260 °C peak reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Compared with SI823H3AD-IS3 and SI823H3CD-IS3, the SI823H3BD-IS3R provides intermediate 8 V UVLO - balancing early fault detection against false triggering in mid-range gate drive systems, while retaining full compatibility with WB SOIC-14 layout, 5 kVRMS isolation, and deglitch-enabled noise resilience.

Availability

SI823H3BD-IS3R is available at Aetrix Electronics and suitable for industrial motor control, solar inverters, and on-board chargers requiring stable component supply, long-term lifecycle support, and AEC-Q100-aligned reliability.

Supply support for SI823H3BD-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.

The Si823Hx family was designed specifically for high-reliability isolated gate driving in power conversion and motor control, replacing optocouplers with silicon-isolated drivers offering superior CMTI, timing accuracy, and lifetime stability.

FAQ

What is the isolation voltage rating of the SI823H3BD-IS3R?

The SI823H3BD-IS3R is rated for 5 kVRMS isolation for 1 minute, certified to UL 1577, IEC 62368-1, VDE EN 62368-1, and CQC GB4943.1 standards. This reinforced insulation rating applies to the WB SOIC-14 package variant and supports safe operation in 1000 V AC mains-connected equipment and high-voltage DC systems like solar inverters and EV chargers. SI823H3BD-IS3R meets creepage and clearance requirements for Pollution Degree 2 environments.

Does the SI823H3BD-IS3R support programmable dead time, and how is it configured?

Yes, the SI823H3BD-IS3R supports resistor-programmable dead time from 20 ns to 200 ns. Configuration is done by connecting an external resistor (RDT) between the DT pin and ground. The relationship follows DT (ns) ≈ 1.8 × RDT (kΩ) + 12. This feature is active only on rising edges when both VIA and VIB are high, ensuring overlap protection in half-bridge configurations without affecting single-switch operation. SI823H3BD-IS3R implements this using on-chip timing circuitry synchronized to the RF carrier.

What happens to the outputs of the SI823H3BD-IS3R if the input-side supply (VDDI) is lost?

When VDDI falls below its UVLO threshold, the SI823H3BD-IS3R enters fail-safe mode: both VOA and VOB are forced low regardless of VIA/VIB states or DIS pin condition. This behavior prevents unintended turn-on of power switches during controller reset or supply fault. The SI823H3BD-IS3R maintains this default-low state until VDDI recovers above the UVLO+ threshold and completes the tSTART startup delay (~1 µs typical). No external pull-down resistors are needed.

How does the deglitch feature function in the SI823H3BD-IS3R?

The SI823H3BD-IS3R includes dual deglitch circuits-one on the input side before modulation and one on the isolated output side after demodulation-each providing ~50 ns pulse rejection. This suppresses ESD-induced glitches, EMI spikes, and board-level noise that could cause false switching. The deglitch is always enabled in SI823H3BD-IS3R (as indicated by "Yes" in Table 1.1) and requires no configuration. SI823H3BD-IS3R's deglitch design ensures clean edge transitions even in high-noise motor drive or inverter environments.

What is the maximum recommended operating temperature for the SI823H3BD-IS3R?

The SI823H3BD-IS3R is specified for continuous operation from –40 °C to +125 °C ambient temperature. Its internal thermal shutdown activates at >150 °C junction temperature, forcing VOA/VOB low to protect downstream power devices. The WB SOIC-14 package provides adequate thermal dissipation for 4 A peak drive at ≤50% duty cycle in standard FR-4 PCBs with 2 oz copper and minimal copper pour. SI823H3BD-IS3R's temperature coefficient for propagation delay is <±50 ps/°C, ensuring timing stability across its full range.