Skyworks Solutions Inc. SI823H3CD-IS3R

Overview

SI823H3CD-IS3R from Skyworks is a high-voltage, dual-channel isolated gate driver with high-side/low-side (HS/LS) configuration, 12 V UVLO threshold, DIS input control, deglitch filtering, and 20–200 ns programmable dead time. It delivers 4.0 A peak sink/source drive into power MOSFETs or IGBTs, supports 5 kVRMS isolation, and operates across –40 °C to +125 °C in WB SOIC-14 packaging. It is used in traction inverters and on-board chargers requiring robust noise immunity and fail-safe default-low outputs.

For engineers reviewing the SI823H3CD-IS3R datasheet, SI823H3CD-IS3R pinout, SI823H3CD-IS3R application, or SI823H3CD-IS3R equivalent, key selection criteria include its 12 V UVLO, DIS-enabled safety shutdown, deglitch noise rejection, 5 kVRMS reinforced insulation per IEC 62368-1, and WB SOIC-14 thermal performance in automotive-grade power stages.

Technical Context

The SI823H3CD-IS3R implements RF-based silicon isolation with a semiconductor barrier, enabling 125 kV/µs CMTI and 30 ns max propagation delay. Its dual HS/LS output stage features independent UVLO monitoring per channel and built-in overlap protection to prevent shoot-through during switching transitions.

It uses a dual-stage pull-up architecture: a standard PMOS provides 1 A DC pull-up, while an NMOS booster delivers up to +3 A peak current during the Miller plateau region for faster turn-on. The DIS pin forces both outputs low unconditionally when high, with tSD shutdown timing and tRESTART recovery after deassertion.

Key Specifications

Pinout & Package

SI823H3CD-IS3R is housed in a 14-pin Wide Body SOIC (WB SOIC-14) package with creepage/clearance optimized for 5 kVRMS isolation and industrial/automotive high-voltage systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Compared with SI823H3BD-IS3 and SI823H3AD-IS3, the SI823H3CD-IS3R provides higher UVLO headroom for 20 V gate drive rails in 800 V systems, reducing false trips during transient load steps while maintaining identical safety features, timing accuracy, and thermal performance in WB SOIC-14.

Availability

SI823H3CD-IS3R is available at Aetrix Electronics and suitable for traction inverters, on-board chargers, battery management systems, and solar central inverters requiring stable component supply with automotive-grade traceability and long-term lifecycle support.

Supply support for SI823H3CD-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global leader in analog and mixed-signal semiconductors, specializing in RF, timing, and isolation technologies for high-reliability applications.

The Si823Hx family was designed specifically for automotive and industrial high-power switching systems, delivering silicon-isolated gate drivers with best-in-class CMTI, low propagation delay, and integrated safety features like deglitch, DIS control, and fail-safe outputs.

FAQ

What is the isolation voltage rating of the SI823H3CD-IS3R?

The SI823H3CD-IS3R has a certified 5 kVRMS isolation rating for 1 minute per UL 1577 and IEC 62368-1, achieved using Skyworks' proprietary silicon RF isolation technology. This rating applies to the WB SOIC-14 package variant and supports reinforced insulation in automotive and industrial high-voltage systems. The SI823H3CD-IS3R maintains this isolation across its full operating temperature range of –40 °C to +125 °C.

Does the SI823H3CD-IS3R support programmable dead time, and how is it configured?

Yes, the SI823H3CD-IS3R supports 20–200 ns programmable dead time via an external resistor (RDT) connected from the DT pin to ground. The relationship is DT ≈ 1.8 × RDT + 12 (ns), where RDT is in kΩ. This feature is implemented in hardware and requires no firmware or external logic. The SI823H3CD-IS3R applies dead time only on rising edges when both inputs are active, preventing shoot-through in half-bridge configurations without adding latency to single-edge transitions.

How does the deglitch feature function in the SI823H3CD-IS3R?

The SI823H3CD-IS3R integrates dual deglitch circuits - one on the input side (VIA/VIB) and one on the output side (after isolation) - each applying a fixed time window to reject narrow noise pulses. Per the datasheet, this suppresses transients shorter than ~20 ns, preventing false switching in high-EMI environments like traction inverters. The deglitch is always enabled in SI823H3CD-IS3R and cannot be disabled, ensuring consistent noise immunity without design trade-offs.

What happens to the outputs of the SI823H3CD-IS3R when the input-side supply (VDDI) is lost?

When VDDI falls below its UVLO threshold, the SI823H3CD-IS3R forces both VOA and VOB outputs to a low state - a fail-safe condition that prevents unintended turn-on of external power switches. This behavior is guaranteed even if VDDA and VDDB remain powered. The SI823H3CD-IS3R maintains this default-low state until VDDI recovers above the UVLO+ threshold and completes the tSTART startup delay, ensuring deterministic power-up sequencing in automotive systems.

Is the SI823H3CD-IS3R qualified for automotive applications, and what certifications does it hold?

Yes, the SI823H3CD-IS3R is AEC-Q100 qualified (Grade 1, –40 °C to +125 °C) and manufactured using Skyworks' automotive-specific process flows with zero-defect methodology. It carries UL 1577, CSA, VDE, and CQC safety certifications for 5 kVRMS reinforced insulation, and supports AIAG-compliant PPAP documentation, IMDS, and CAMDS listings - all confirmed for the "-AS3" automotive-grade suffix variant of the SI823H3CD-IS3R.