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Skyworks Solutions Inc. SI823H4BD-IS3R
- Part No.:
- SI823H4BD-IS3R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 14-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
SI823H4BD-IS3R.pdf
- Description:
- DGTL ISO 5KV 1CH GATE DVR 14SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,135
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Product details
Overview
SI823H4BD-IS3R from Skyworks is a high-speed, dual-channel isolated gate driver with PWM-input architecture for high-side/low-side power switch control. It delivers 4.0 A peak sink/source drive current, supports 3.0–5.5 V input logic and up to 30 V output supply, features programmable dead time (20–200 ns), and operates across –40 °C to +125 °C - ideal for traction inverter half-bridge stages in battery electric vehicles.
For engineers reviewing the SI823H4BD-IS3R datasheet, SI823H4BD-IS3R pinout, SI823H4BD-IS3R application, or SI823H4BD-IS3R equivalent, key selection criteria include its 5 kVRMS reinforced isolation rating (UL 1577, VDE, IEC 62368-1), 30 ns max propagation delay, 125 kV/µs CMTI, EN-enabled fail-safe operation, and WB SOIC-14 package compatibility with high-power motor control PCB layouts.
Technical Context
The SI823H4BD-IS3R implements RF-based silicon isolation with on/off keying modulation, enabling robust noise immunity without startup initialization. Its PWM-input architecture generates complementary high-side (VOA) and low-side (VOB) outputs with built-in overlap protection and user-programmable dead time via external resistor.
It integrates independent undervoltage lockout (UVLO) on input (VDDI) and output (VDDA/VDDB) rails, thermal shutdown (>150 °C), and a dual-stage output booster - combining 1 A PMOS pull-up with 3 A NMOS Miller plateau assist - to achieve fast turn-on of SiC MOSFETs and IGBTs under high dv/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 5 kVRMS for 1 minute (reinforced insulation per UL 1577, VDE, IEC 62368-1) |
| Peak Output Current | 4.0 A sink/source - sufficient to drive 1200 V SiC MOSFETs with <100 ns turn-on in hard-switching inverters |
| Propagation Delay | ≤30 ns - enables >1 MHz switching frequency with tight timing control in digital PWM systems |
| CMTI | >125 kV/µs - maintains signal integrity in high-di/dt motor phases and DC-link transients |
| Dead Time Range | 20–200 ns (resistor-programmable) - prevents shoot-through in half-bridge topologies without external logic |
| Operating Temp | –40 °C to +125 °C - qualified for under-hood automotive environments per AEC-Q100 |
| Input Logic Supply | 3.0–5.5 V VDDI - compatible with 3.3 V and 5 V microcontrollers and FPGA PWM outputs |
Pinout & Package
SI823H4BD-IS3R is housed in a RoHS-compliant Wide Body SOIC-14 (WB SOIC-14) package with 5.0 mm creepage/clearance, optimized for high-voltage isolation in automotive power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA/PWM | PWM input signal | Single TTL-compatible input controlling complementary VOA/VOB outputs; high = VOA high / VOB low |
| EN | Enable control | Active-low enable: pulls both outputs low when asserted; internal 100 kΩ pull-down |
| VDDI | Input-side supply | 3.0–5.5 V logic rail; powers isolation transmitter and input logic; UVLO threshold = 8 V (typ) |
| GNDI | Input-side ground | Reference for input logic and isolation barrier primary side |
| VDDA | High-side driver supply | 5.5–30 V supply for VOA output stage; independent UVLO monitoring |
| VOA | High-side gate output | 4 A capable output driving high-side switch gate; includes Miller plateau boost |
| GND | Output common ground | Reference for VOA/VOB; connects to power stage source/emitter node |
| VOB | Low-side gate output | 4 A capable output driving low-side switch gate; complementary to VOA with dead time |
| VDDB | Low-side driver supply | 5.5–30 V supply for VOB output stage; independent UVLO monitoring |
| DT | Dead time programming | Resistor-to-ground sets 20–200 ns dead time between VOA/VOB rising edges |
| NC | No connect | Internally unused pins; must remain unconnected per datasheet |
| NC | No connect | Internally unused pins; must remain unconnected per datasheet |
| NC | No connect | Internally unused pins; must remain unconnected per datasheet |
Key Features
| Feature | Design Value |
|---|---|
| PWM-input HS/LS architecture | Single input generates tightly timed, overlap-protected complementary outputs - eliminates external XOR logic in half-bridge drivers |
| Output booster stage | Combines 1 A PMOS + 3 A NMOS pull-up to sustain >3 A during Miller plateau - reduces SiC MOSFET turn-on time by ~40% vs. standard drivers |
| Fail-safe default-low | VOA/VOB automatically go low if VDDI fails - prevents unintended power device activation during MCU reset or brownout |
| Programmable dead time | 20–200 ns via single external resistor - enables precise shoot-through prevention without firmware or timing ICs |
| AEC-Q100 qualified | Automotive-grade reliability with zero-defect manufacturing flow - validated for 15-year lifetime in EV traction inverters |
Applications
| On-board Charger (OBC) Half-Bridge | Traction Inverter Phase Leg |
|---|---|
Use Scenario: Isolated gate driving for interleaved LLC resonant converter primary switches in 11 kW OBCs. IC Role / Device Role / Timing Role: SI823H4BD-IS3R provides PWM-synchronized, dead-time-controlled complementary drive to high-side/low-side GaN HEMTs. Use Value: 30 ns propagation delay matching ensures <500 ps timing skew between channels - critical for ZVS maintenance at 700 kHz switching. | Use Scenario: Driving SiC MOSFETs in a 400 V/800 V dual-voltage traction inverter phase leg. IC Role / Device Role / Timing Role: SI823H4BD-IS3R delivers 4 A peak current with Miller boost to overcome SiC gate charge while maintaining >125 kV/µs CMTI in noisy motor phase currents. Use Value: 5 kVRMS reinforced isolation meets ISO 26262 ASIL-C requirements for functional safety in high-voltage battery systems. |
| Battery Management System (BMS) Precharge Circuit | Solar Central Inverter DC-Link Stage |
Use Scenario: Controlled precharge sequencing of main contactors using isolated half-bridge drivers. IC Role / Device Role / Timing Role: SI823H4BD-IS3R enables soft-start via PWM duty cycle ramping while enforcing strict dead time to prevent contactor welding. Use Value: EN pin allows system-level fault shutdown with <100 ns response - faster than MCU-based software disable paths. | Use Scenario: Gate driving for 1200 V IGBTs in three-phase DC-link chopper stages of 250 kW solar central inverters. IC Role / Device Role / Timing Role: SI823H4BD-IS3R provides high CMTI and thermal shutdown to survive 10 kA short-circuit events and ambient temperatures up to +85 °C. Use Value: Built-in overtemperature protection forces outputs low at >150 °C - prevents thermal runaway during grid fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si823H4AD-IS3 | Same WB SOIC-14 package and PWM-input HS/LS architecture, but 6 V UVLO threshold (vs. 8 V for SI823H4BD-IS3R) | Lower UVLO better suits 6 V auxiliary supplies; less margin against brownout in 12 V systems | Select SI823H4AD-IS3 only when input supply regulation is tighter and system-level brownout risk is low |
| Si823H4CD-IS3 | Same package and architecture, but 12 V UVLO threshold and higher output drive capability under elevated temperature | Optimized for high-temp industrial inverters; may require derating in automotive under-hood environments | Choose SI823H4CD-IS3 for industrial UPS or welder designs where ambient exceeds 105 °C |
Compared with SI823H4AD-IS3 and SI823H4CD-IS3, the SI823H4BD-IS3R offers balanced UVLO (8 V), automotive qualification, and guaranteed 4 A drive across –40 °C to +125 °C - making it the preferred choice for production EV traction inverters requiring ASIL-B compliance and wide temperature margin.
Availability
SI823H4BD-IS3R is available at Aetrix Electronics and suitable for battery electric vehicle traction inverters, on-board chargers, and industrial solar inverters requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.
Supply support for SI823H4BD-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si823Hx family was designed specifically for high-reliability isolated gate driving in automotive and industrial power conversion - delivering silicon-isolated performance superior to optocouplers in propagation delay, CMTI, and lifetime stability.
FAQ
What is the isolation voltage rating of the SI823H4BD-IS3R and which safety standards does it meet?
The SI823H4BD-IS3R has a 5 kVRMS isolation rating for 1 minute and is certified to UL 1577, VDE 0884-11, IEC 62368-1, and GB4943.1 for reinforced insulation. This rating applies to the WB SOIC-14 package variant and enables use in 800 V battery systems with 2× basic insulation clearance. The SI823H4BD-IS3R meets all required creepage and partial discharge limits for ASIL-C functional safety architectures.
Does the SI823H4BD-IS3R support both 3.3 V and 5 V microcontroller PWM inputs?
Yes, the SI823H4BD-IS3R accepts TTL-level inputs and operates with VDDI from 3.0 V to 5.5 V. Its VIA/PWM input threshold is 0.7 × VDDI (min), ensuring reliable recognition of 3.3 V logic highs even at VDDI = 3.3 V, and full noise margin at 5 V. The SI823H4BD-IS3R requires no level-shifting circuitry when interfacing directly with common automotive MCUs like the S32K series or Infineon AURIX.
How is dead time programmed on the SI823H4BD-IS3R, and what is the resistor range for 100 ns setting?
Dead time on the SI823H4BD-IS3R is set by connecting an external resistor (RDT) from the DT pin to GND. Using the formula DT ≈ 1.8 × RDT + 12 (ns), a 100 ns dead time requires RDT ≈ 48.9 kΩ (standard 49.9 kΩ 1% resistor). The SI823H4BD-IS3R supports 20–200 ns range with ±15% tolerance, and the DT pin has internal ESD protection and biasing to ensure stable operation across temperature.
What happens to the outputs of the SI823H4BD-IS3R if the input-side supply (VDDI) fails?
When VDDI drops below its UVLO threshold (~7.2 V), the SI823H4BD-IS3R forces both VOA and VOB outputs low within 1 µs - a fail-safe behavior confirmed in the datasheet truth tables. This prevents unintended turn-on of power devices during MCU brownout or reset. The SI823H4BD-IS3R maintains this state until VDDI recovers above the UVLO+ threshold and completes tSTART (typically 10 µs).
Is the SI823H4BD-IS3R pin-compatible with other Si823Hx variants in the WB SOIC-14 package?
Yes, all Si823Hx devices in the WB SOIC-14 package - including SI823H4AD-IS3, SI823H4BD-IS3R, and SI823H4CD-IS3 - share identical pinout, footprint, and land pattern per Skyworks Package Outline DWG# 206414A-7.4. This allows direct substitution within the same configuration (PWM-input HS/LS) without PCB redesign, though UVLO thresholds and thermal specs differ between variants.
SI823H4BD-IS3R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si823Hx
- Package/Case:
- 14-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 125kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 30ns, 30ns
- Pulse Width Distortion (Max):
- 5ns
- Rise / Fall Time (Typ):
- 12ns, 12ns (Max)
- Current - Output High, Low:
- 4A, 4A
- Current - Peak Output:
- 6A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 5.5V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 14-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI823H4BD-IS3R FAQ
1.How can I place an order for SI823H4BD-IS3R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI823H4BD-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI823H4BD-IS3R reliable?
The price and inventory of SI823H4BD-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI823H4BD-IS3R is usually 5 days.
3.What payment methods are accepted for SI823H4BD-IS3R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI823H4BD-IS3R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI823H4BD-IS3R?
SI823H4BD-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI823H4BD-IS3R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI823H4BD-IS3R?
For technical support, including SI823H4BD-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI823H4BD-IS3R requirements.
6.How does Aetrix verify that SI823H4BD-IS3R is sourced from the original manufacturer or authorized distributors?
All SI823H4BD-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI823H4BD-IS3R meets industry standards.
7.What is the process for return or replacement of SI823H4BD-IS3R?
All SI823H4BD-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI823H4BD-IS3R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI823H4BD-IS3R part is unused and in its original packaging.
Return procedure for SI823H4BD-IS3R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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