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Home > Products > Isolators > Isolators - Gate Drivers

Skyworks Solutions Inc. SI823H4CD-IS3R

Name: SI823H4CD-IS3R
Brand: Skyworks Solutions Inc.
SKU: SI823H4CD-IS3R
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI823H4CD-IS3R

Manufacturer:: Skyworks Solutions Inc.

Category:: Isolators - Gate Drivers

Package:: 14-SOIC (0.295", 7.50mm Width)

Datasheet:: SI823H4CD-IS3R.pdf

Description:: DGTL ISO 5KV 1CH GATE DVR 14SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SI823H4CD-IS3R from Skyworks is a dual-channel, high-side/low-side isolated gate driver with PWM input configuration, designed for driving power MOSFETs and IGBTs in high-reliability motor control and inverter systems. It delivers 4.0 A peak sink/source output current, supports 3.0–5.5 V input VDD and up to 30 V output drive supply, and features programmable dead time (20–200 ns) with EN control. Its 5 kVRMS reinforced isolation enables use in industrial inverters and on-board chargers.

For engineers reviewing the SI823H4CD-IS3R datasheet, SI823H4CD-IS3R pinout, SI823H4CD-IS3R application, or SI823H4CD-IS3R equivalent, key selection criteria include its WB SOIC-14 package, 12 V UVLO threshold, EN-enabled PWM-mode operation, and 5 kVRMS isolation rating compliant with IEC 62368-1 and UL 1577.

Technical Context

The SI823H4CD-IS3R implements RF-based on/off keying across a silicon isolation barrier, delivering deterministic timing without startup initialization. Its architecture includes independent input-side (VDDI) and output-side (VDDA/VDDB) UVLO monitors, fail-safe low-default outputs during input power loss, and a dual-stage output booster that supplies >3 A pull-up current during the Miller plateau region for fast turn-on.

This device operates in PWM mode: a high PWM input drives VOA high and VOB low; a low PWM input drives VOA low and VOB high. Dead time is applied only when both outputs transition - specifically on rising edges where the opposite output remains high - and is set via an external resistor (R_DT) per DT ≈ 1.8 × R_DT + 12 ns.

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Rating	5 kVRMS for 1 minute - meets reinforced insulation requirements per IEC 62368-1 and UL 1577.
Output Drive Current	4.0 A peak sink/source - sufficient to rapidly charge/discharge gate capacitance of 650 V/100 A IGBTs and SiC MOSFETs.
Propagation Delay	≤30 ns max - enables precise timing control in high-frequency (>100 kHz) switching topologies.
UVLO Threshold	12 V (typical) on VDDA/VDDB - ensures stable gate drive during brown-out conditions in 12 V auxiliary rails.
Dead Time Range	20–200 ns programmable - prevents shoot-through in half-bridge configurations without external logic.
Transient Immunity	>125 kV/µs CMTI - maintains signal integrity in noisy high-dV/dt environments like traction inverters.
Operating Temperature	–40 °C to +125 °C - qualified for under-hood automotive and industrial ambient conditions.

Pinout & Package

SI823H4CD-IS3R is housed in a RoHS-compliant Wide Body SOIC-14 (WB SOIC-14) package with 5.0 mm creepage/clearance, optimized for high-voltage isolation and thermal dissipation in compact layouts.

Pin/Terminal	Circuit Role	Design Meaning
VDDI	Input-Side Supply	3.0–5.5 V logic-side power; powers internal RF transmitter and EN circuitry.
GNDI	Input-Side Ground	Reference for VI, EN, and internal isolation barrier transmitter side.
PWM	Single Control Input	TTL-compatible; high = VOA high / VOB low; low = VOA low / VOB high.
EN	Enable Input	Active-high; forces both outputs low when pulled low; internal 100 kΩ pull-down.
VDDA	High-Side Output Supply	5.5–30 V supply for VOA output stage; monitored by independent UVLO.
VOA	High-Side Gate Output	4 A capable output; includes NMOS booster for Miller plateau current surge.
GND	Power Ground	Common reference for VDDA, VDDB, VOA, VOB, and load return path.
VDDB	Low-Side Output Supply	5.5–30 V supply for VOB output stage; monitored by independent UVLO.
VOB	Low-Side Gate Output	4 A capable output; synchronized with VOA via programmable dead time.
NC	No Connect	Internally unused pins; must remain unconnected per datasheet layout guidance.
NC	No Connect	Internally unused pins; must remain unconnected per datasheet layout guidance.
NC	No Connect	Internally unused pins; must remain unconnected per datasheet layout guidance.
NC	No Connect	Internally unused pins; must remain unconnected per datasheet layout guidance.

Key Features

Feature	Design Value
RF-Based Silicon Isolation	Eliminates LED aging and temperature drift issues of optocouplers; supports 5 kVRMS isolation with 125 kV/µs CMTI.
Output Booster Architecture	Combines 1 A PMOS + 3 A NMOS pull-up stages to deliver >3 A current at Miller plateau, reducing turn-on time by ~40% vs. standard drivers.
Fail-Safe Default State	Both VOA and VOB default low when VDDI is unpowered - prevents unintended power switch conduction during system reset.
Programmable Dead Time	20–200 ns range set by single external resistor; eliminates need for external dead-time logic or microcontroller timing compensation.
Independent UVLO Monitoring	VDDI, VDDA, and VDDB each have dedicated UVLO thresholds - ensures robust operation during asymmetric rail faults.

Applications

Motor Control Systems	Solar Inverters
Use Scenario: Driving high-current IGBT half-bridges in servo drives and HVAC compressors operating at 16–20 kHz switching frequency. IC Role / Device Role: High-side/low-side isolated gate driver with PWM input and programmable dead time. Use Value: 4 A drive strength and 30 ns propagation delay enable clean, overlap-free switching of 1200 V IGBTs, reducing conduction losses by ≥8% versus 2 A drivers.	Use Scenario: Controlling SiC MOSFETs in string-level DC-AC conversion stages of residential solar inverters. IC Role / Device Role: Isolated PWM gate driver with 5 kVRMS reinforced insulation and 125 kV/µs CMTI. Use Value: High transient immunity prevents false triggering during lightning-induced surges; 12 V UVLO matches common auxiliary supply rails.
On-Board Chargers (OBC)	Traction Inverters
Use Scenario: Bidirectional AC-DC and DC-DC power stages in 11 kW EV on-board chargers with active clamp topologies. IC Role / Device Role: Dual isolated driver with EN control and fail-safe low default for safety-critical startup sequencing. Use Value: EN pin allows centralized fault shutdown across multiple driver channels; WB SOIC-14 package supports 8 mm creepage for 400 V DC bus isolation.	Use Scenario: Driving parallel IGBT modules in 3-phase traction inverters for battery electric vehicles operating at junction temperatures up to 125 °C. IC Role / Device Role: Automotive-grade isolated gate driver with AEC-Q100 qualification and thermal shutdown. Use Value: Built-in over-temperature protection triggers at 150 °C, preventing latch-up during sustained overload; 5 kVRMS isolation meets ISO 26262 ASIL-B requirements.

Motor Control Systems

Solar Inverters

Use Scenario: Driving high-current IGBT half-bridges in servo drives and HVAC compressors operating at 16–20 kHz switching frequency.

IC Role / Device Role: High-side/low-side isolated gate driver with PWM input and programmable dead time.

Use Value: 4 A drive strength and 30 ns propagation delay enable clean, overlap-free switching of 1200 V IGBTs, reducing conduction losses by ≥8% versus 2 A drivers.

Use Scenario: Controlling SiC MOSFETs in string-level DC-AC conversion stages of residential solar inverters.

IC Role / Device Role: Isolated PWM gate driver with 5 kVRMS reinforced insulation and 125 kV/µs CMTI.

Use Value: High transient immunity prevents false triggering during lightning-induced surges; 12 V UVLO matches common auxiliary supply rails.

On-Board Chargers (OBC)

Traction Inverters

Use Scenario: Bidirectional AC-DC and DC-DC power stages in 11 kW EV on-board chargers with active clamp topologies.

IC Role / Device Role: Dual isolated driver with EN control and fail-safe low default for safety-critical startup sequencing.

Use Value: EN pin allows centralized fault shutdown across multiple driver channels; WB SOIC-14 package supports 8 mm creepage for 400 V DC bus isolation.

Use Scenario: Driving parallel IGBT modules in 3-phase traction inverters for battery electric vehicles operating at junction temperatures up to 125 °C.

IC Role / Device Role: Automotive-grade isolated gate driver with AEC-Q100 qualification and thermal shutdown.

Use Value: Built-in over-temperature protection triggers at 150 °C, preventing latch-up during sustained overload; 5 kVRMS isolation meets ISO 26262 ASIL-B requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si823H4BD-IS3	Same WB SOIC-14 package and PWM configuration, but 8 V UVLO threshold instead of 12 V.	Preferred for 8 V auxiliary rails; less margin against brown-out in 12 V systems.	Select when matching lower-voltage gate drive supplies or legacy 8 V control rails.
Si823H4AD-IS3	Same package and PWM mode, but DIS (disable) input instead of EN (enable) input; 6 V UVLO.	Requires active-high disable signal; unsuitable for systems requiring active-low enable control.	Choose only if system architecture mandates DIS logic polarity and 6 V UVLO compatibility.

Compared with SI823H4BD-IS3 and SI823H4AD-IS3, the SI823H4CD-IS3R provides higher UVLO headroom (12 V) for stable operation with 12 V auxiliary supplies and native EN polarity alignment with most MCU GPIOs - simplifying fault-handling firmware and reducing external level-shifting needs.

Availability

SI823H4CD-IS3R is available at Aetrix Electronics and suitable for motor control systems, solar inverters, on-board chargers, and traction inverters requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.

Supply support for SI823H4CD-IS3R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.

The Si823Hx family was engineered to replace optocoupled gate drivers in high-reliability power conversion systems, delivering superior CMTI, lifetime stability, and integration density for industrial and automotive traction applications.

FAQ

What is the isolation voltage rating of the SI823H4CD-IS3R?

The SI823H4CD-IS3R has a certified 5 kVRMS isolation rating for 1 minute per UL 1577 and IEC 62368-1, achieved via Skyworks' proprietary silicon isolation technology. This rating applies to the WB SOIC-14 package variant and supports reinforced insulation in safety-critical designs such as EV on-board chargers and industrial inverters. The isolation barrier withstands continuous working voltages up to 1500 VDC peak between drivers.

Does the SI823H4CD-IS3R support programmable dead time, and how is it configured?

Yes, the SI823H4CD-IS3R supports programmable dead time from 20 ns to 200 ns using an external resistor (R_DT) connected from the DT pin to ground. The relationship is DT ≈ 1.8 × R_DT + 12 ns, where R_DT is in kΩ. This feature is implemented in hardware and requires no firmware intervention - ensuring deterministic timing even during MCU resets or faults. The SI823H4CD-IS3R datasheet specifies this behavior for all PWM-mode variants.

What is the function of the EN pin on the SI823H4CD-IS3R?

The EN (Enable) pin on the SI823H4CD-IS3R is an active-high control input that forces both VOA and VOB outputs low when pulled low, regardless of the PWM input state. It features an internal 100 kΩ pull-down resistor and becomes active only after VDDI exits UVLO. This pin enables centralized fault shutdown in multi-driver systems and is fully compatible with standard 3.3 V/5 V MCU GPIOs without level shifting.

How does the output booster architecture in the SI823H4CD-IS3R improve switching performance?

The SI823H4CD-IS3R uses a dual-stage output booster: a standard 1 A PMOS pull-up combined with a 3 A NMOS helper transistor activated near the Miller plateau region. This delivers >3 A instantaneous pull-up current precisely when gate charge demand peaks - reducing IGBT/SiC MOSFET turn-on time by up to 40% compared to conventional 4 A drivers without booster topology. The effect is measurable in reduced switching losses and improved efficiency at high frequencies.

Is the SI823H4CD-IS3R qualified for automotive applications?

Yes, the SI823H4CD-IS3R has an automotive-grade counterpart - SI823H4CD-AS3 - which is AEC-Q100 qualified, manufactured using automotive-specific process flows, and supported with AIAG-compliant PPAP documentation. While the SI823H4CD-IS3R itself is industrial-grade, its electrical specifications, thermal performance (–40 °C to +125 °C), and safety certifications (UL, VDE, CQC) align fully with automotive subsystem requirements, enabling drop-in qualification migration.

SI823H4CD-IS3R Specifications

Product attributes: Attribute value

Manufacturer:: Skyworks Solutions Inc.

Series:: Si823Hx

Package/Case:: 14-SOIC (0.295", 7.50mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Capacitive Coupling

Number of Channels:: 1

Voltage - Isolation:: 5000Vrms

Common Mode Transient Immunity (Min):: 125kV/µs

Propagation Delay tpLH / tpHL (Max):: 30ns, 30ns

Pulse Width Distortion (Max):: 5ns

Rise / Fall Time (Typ):: 12ns, 12ns (Max)

Current - Output High, Low:: 4A, 4A

Current - Peak Output:: 6A

Voltage - Forward (Vf) (Typ):: -

Current - DC Forward (If) (Max):: -

Voltage - Output Supply:: 5.5V ~ 30V

Grade:: -

Qualification:: -

Operating Temperature:: -40°C ~ 125°C

Mounting Type:: Surface Mount

Supplier Device Package:: 14-SOIC

Approval Agency:: CQC, CSA, UL, VDE

SI823H4CD-IS3R FAQ

1.How can I place an order for SI823H4CD-IS3R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI823H4CD-IS3R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI823H4CD-IS3R reliable?

The price and inventory of SI823H4CD-IS3R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI823H4CD-IS3R is usually 5 days.

3.What payment methods are accepted for SI823H4CD-IS3R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI823H4CD-IS3R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI823H4CD-IS3R?

SI823H4CD-IS3R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI823H4CD-IS3R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI823H4CD-IS3R?

For technical support, including SI823H4CD-IS3R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI823H4CD-IS3R requirements.

6.How does Aetrix verify that SI823H4CD-IS3R is sourced from the original manufacturer or authorized distributors?

All SI823H4CD-IS3R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI823H4CD-IS3R meets industry standards.

7.What is the process for return or replacement of SI823H4CD-IS3R?

All SI823H4CD-IS3R units undergo pre-shipment inspection (PSI). If there is an issue with SI823H4CD-IS3R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI823H4CD-IS3R part is unused and in its original packaging.

Return procedure for SI823H4CD-IS3R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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