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Skyworks Solutions Inc. SI823H5BD-IS3
- Part No.:
- SI823H5BD-IS3
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 14-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
SI823H5BD-IS3.pdf
- Description:
- DGTL ISO 5KV 2CH GATE DVR 14SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,122
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Product details
Overview
SI823H5BD-IS3 from Skyworks is a dual-channel isolated gate driver with independent input control (VIA/VIB), 4.0 A peak sink/source output drive, 8 V UVLO threshold, and enable (EN) logic. It features silicon-based isolation rated at 5 kVRMS for 1 minute, operates across –40 °C to +125 °C, and is packaged in WB SOIC-14. It drives power MOSFETs and IGBTs in high-reliability industrial motor control and isolated DC-DC power supplies.
For engineers reviewing the SI823H5BD-IS3 datasheet, SI823H5BD-IS3 pinout, SI823H5BD-IS3 application, or SI823H5BD-IS3 equivalent, this page delivers verified specifications, functional architecture, package layout, real-world use cases, and validated alternative options - all grounded in Skyworks' official Si823Hx family documentation and ordering guide.
Technical Context
The SI823H5BD-IS3 implements two independent isolated channels using RF-based on/off keying modulation across a proprietary silicon isolation barrier - not optical coupling - enabling 30 ns max propagation delay, >125 kV/µs CMTI, and minimal temperature/aging drift. Each channel supports TTL-compatible inputs and failsafe low-default outputs when input-side power (VDDI) is absent.
It uses a dual-stage output driver architecture: a standard PMOS provides baseline 1 A pull-up, while an NMOS booster delivers up to +3 A extra current during the Miller plateau region to accelerate power switch turn-on. No dead time or deglitch functionality is included, as confirmed by its "N/A" dead time setting and "No" deglitch flag in Table 1.1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 5 kVRMS for 1 minute - enables reinforced insulation per IEC 62368-1 and UL 1577, suitable for mains-connected industrial systems. |
| Output Drive Strength | 4.0 A peak sink/source - sufficient to rapidly charge/discharge gate capacitance of high-power MOSFETs and IGBTs up to 1200 V class. |
| Propagation Delay | ≤30 ns - ensures tight timing control in high-frequency switching applications such as 100+ kHz inverters and resonant converters. |
| UVLO Threshold | 8 V on VDDA/VDDB - prevents erratic output behavior during brown-out conditions; hysteresis ensures stable re-enable above 8.5 V. |
| Operating Temperature | –40 °C to +125 °C ambient - qualified for under-hood automotive and industrial environments without derating. |
| Input Supply Range | 3.0–5.5 V on VDDI - compatible with standard MCU GPIO and isolated digital controllers without level-shifting. |
| Package | WB SOIC-14 - wide-body footprint improves creepage/clearance for 5 kVRMS isolation; RoHS-compliant, 260 °C reflow rated. |
Pinout & Package
SI823H5BD-IS3 is housed in a 14-pin Wide Body SOIC (WB SOIC-14) package with 1.27 mm pitch, 10.3 mm body width, and ≥8.3 mm creepage/clearance - optimized for reinforced isolation. Pin functions are defined per Skyworks' official Pin Descriptions section (page 30) and top-level block diagram (page 26).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Input-side supply | 3.0–5.5 V power for logic and isolation transmitter; internal UVLO monitors this rail. |
| GNDI | Input-side ground | Reference for VIA, VIB, EN, and VDDI; galvanically isolated from output side. |
| VIA | Channel A input | TTL-compatible high-true logic input; controls VOA independently of VIB. |
| VIB | Channel B input | TTL-compatible high-true logic input; controls VOB independently of VIA. |
| EN | Enable control | Active-high enable: drives both VOA and VOB low when pulled low; internal 100 kΩ pull-down. |
| VDDA | Output A supply | 5.5–30 V drive supply for VOA; UVLO protection active if voltage drops below 8 V. |
| GND | Output common ground | Reference for VOA, VOB, VDDA, VDDB; tied to power switch source/emitter. |
| VOA | Channel A output | 4 A capable push-pull output; defaults low during VDDI UVLO or EN = low. |
| VDDB | Output B supply | 5.5–30 V drive supply for VOB; UVLO protection active if voltage drops below 8 V. |
| VOB | Channel B output | 4 A capable push-pull output; defaults low during VDDI UVLO or EN = low. |
| NC | No connect | Pins 1, 2, 13, and 14 are internally unused and must remain unconnected per datasheet. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent isolated channels | Enables fully decoupled control of two discrete power switches - e.g., half-bridge upper/lower devices or dual-phase synchronous rectifiers - without shared timing constraints. |
| Silicon RF isolation barrier | Delivers 5 kVRMS isolation with >125 kV/µs CMTI and 30 ns max propagation delay - outperforming optocouplers in noise immunity and speed while eliminating LED aging concerns. |
| Booster-assisted output stage | Combines 1 A PMOS + 3 A NMOS pull-up to deliver transient current surge during Miller plateau crossing - reducing gate turn-on time by up to 40% vs. conventional drivers. |
| Fail-safe low-default outputs | VOA and VOB automatically assert low when VDDI is unpowered or in UVLO - preventing unintended power switch conduction during system startup or fault recovery. |
| Industrial temperature range | Rated from –40 °C to +125 °C ambient with no derating - validated for continuous operation in motor drives, solar inverters, and industrial SMPS where thermal margin is critical. |
Applications
| Motor Control Half-Bridge | Isolated DC-DC Gate Driver |
|---|---|
Use Scenario: Driving high-side and low-side IGBTs in a 3-phase inverter for HVAC compressors or industrial pumps. IC Role / Device Role / Timing Role: Dual-channel isolated gate driver providing independent, synchronized, and noise-immune control of upper/lower switches in each leg. Use Value: 5 kVRMS isolation and >125 kV/µs CMTI prevent false triggering from high dv/dt bus transients; 4 A drive strength ensures <100 ns turn-on for 1200 V IGBTs. |
Use Scenario: Controlling primary-side MOSFETs in an isolated flyback or forward converter with secondary-side feedback. IC Role / Device Role / Timing Role: Isolated interface between controller IC and power switch, replacing optocoupler + discrete driver combos. Use Value: Single-chip integration reduces board area by 40%; 30 ns propagation delay enables >500 kHz switching with precise duty cycle fidelity. |
| Solar Microinverter Gate Control | Industrial PLC Output Stage |
Use Scenario: Driving back-to-back MOSFETs in bidirectional AC-coupled microinverter H-bridges for residential PV systems. IC Role / Device Role / Timing Role: Dual isolated driver delivering independent gate signals with fail-safe default-low behavior during grid loss or controller reset. Use Value: –40 °C to +125 °C rating supports outdoor enclosure operation; 8 V UVLO prevents partial turn-on during input undervoltage events. |
Use Scenario: Providing isolated, high-current gate drive for solid-state relays or SSR modules in programmable logic controller output cards. IC Role / Device Role / Timing Role: Robust interface between low-voltage logic and 24–48 V DC load switching circuits requiring reinforced insulation. Use Value: WB SOIC-14 package meets IEC 61000-4-5 surge immunity requirements; EN pin allows centralized safety shutdown across multiple channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si823H5AB-IS3 | Same WB SOIC-14 package and dual-VIA/VIB configuration, but 6 V UVLO threshold instead of 8 V. | Better suited for lower-voltage gate drive rails (e.g., 6–12 V VDDA/VDDB); less margin against brown-out in 15–30 V systems. | Select when system VDDA/VDDB nominal is ≤12 V and tighter UVLO hysteresis is acceptable. |
| Si823H5CB-IS3 | Same WB SOIC-14 package and dual-VIA/VIB configuration, but 12 V UVLO threshold instead of 8 V. | Required for higher-voltage gate drive (e.g., 15–30 V VDDA/VDDB); avoids premature UVLO trip during transient dips. | Select when VDDA/VDDB nominal is ≥15 V or system experiences frequent 10–12 V excursions. |
Compared with SI823H5AB-IS3 and SI823H5CB-IS3, the SI823H5BD-IS3 offers optimal UVLO headroom for 12–15 V gate drive systems - balancing noise immunity against false shutdown risk - while retaining identical timing, isolation, and thermal performance across the Si823H5x dual-driver variant set.
Availability
SI823H5BD-IS3 is available at Aetrix Electronics and suitable for industrial motor control, isolated DC-DC power supplies, and solar microinverter designs requiring stable component supply, long-term lifecycle support, and AEC-Q100-aligned reliability.
Supply support for SI823H5BD-IS3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si823Hx family was designed specifically to replace aging optocoupler-based gate drivers in high-reliability power conversion systems - delivering superior CMTI, propagation delay consistency, and lifetime stability through monolithic silicon isolation.
FAQ
What is the isolation voltage rating of the SI823H5BD-IS3?
The SI823H5BD-IS3 is rated for 5 kVRMS isolation for 1 minute per UL 1577 and IEC 62368-1 reinforced insulation standards. This rating applies to the WB SOIC-14 package and is validated across the full operating temperature range of –40 °C to +125 °C. The isolation barrier uses Skyworks' proprietary silicon RF technology, not optocoupling.
Does the SI823H5BD-IS3 support programmable dead time?
No, the SI823H5BD-IS3 does not support programmable dead time. Per Table 1.1 in the Si823Hx Ordering Guide, its Dead Time Setting is explicitly listed as "N/A". Dead time functionality is only present in HS/LS or PWM-configured variants (e.g., Si823H1x, Si823H2x, Si823H4x), not in dual-independent-input variants like SI823H5BD-IS3.
What happens to the outputs of the SI823H5BD-IS3 when input power is lost?
When VDDI falls below its UVLO threshold (or is unpowered), both VOA and VOB default to low state - a fail-safe behavior confirmed in Table 2.3 and Section 2.4.2 of the datasheet. This prevents unintended turn-on of external power switches during controller power loss, brown-out, or reset sequences.
Can the SI823H5BD-IS3 drive 1200 V SiC MOSFETs?
Yes, the SI823H5BD-IS3 can drive 1200 V SiC MOSFETs. Its 4.0 A peak sink/source output, 30 ns propagation delay, and >125 kV/µs CMTI meet the dynamic gate drive and noise immunity requirements of fast-switching SiC devices. VDDA/VDDB supports up to 30 V, sufficient for recommended 15–20 V SiC gate bias.
Is the SI823H5BD-IS3 automotive-qualified?
The SI823H5BD-IS3 is an industrial-grade part (suffix "-IS3"), but an automotive-grade equivalent - SI823H5BD-AS3 - is available and AEC-Q100 qualified. Both share identical electrical specs and WB SOIC-14 packaging; the AS3 version undergoes additional automotive process controls, PPAP documentation, and IMDS/CAMDS compliance per Skyworks' ordering guide.
SI823H5BD-IS3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si823Hx
- Package/Case:
- 14-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 5000Vrms
- Common Mode Transient Immunity (Min):
- 125kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 30ns, 30ns
- Pulse Width Distortion (Max):
- 5ns
- Rise / Fall Time (Typ):
- 12ns, 12ns (Max)
- Current - Output High, Low:
- 4A, 4A
- Current - Peak Output:
- 6A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 5.5V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 14-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI823H5BD-IS3 FAQ
1.How can I place an order for SI823H5BD-IS3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI823H5BD-IS3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI823H5BD-IS3 reliable?
The price and inventory of SI823H5BD-IS3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI823H5BD-IS3 is usually 5 days.
3.What payment methods are accepted for SI823H5BD-IS3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI823H5BD-IS3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI823H5BD-IS3?
SI823H5BD-IS3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI823H5BD-IS3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI823H5BD-IS3?
For technical support, including SI823H5BD-IS3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI823H5BD-IS3 requirements.
6.How does Aetrix verify that SI823H5BD-IS3 is sourced from the original manufacturer or authorized distributors?
All SI823H5BD-IS3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI823H5BD-IS3 meets industry standards.
7.What is the process for return or replacement of SI823H5BD-IS3?
All SI823H5BD-IS3 units undergo pre-shipment inspection (PSI). If there is an issue with SI823H5BD-IS3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI823H5BD-IS3 part is unused and in its original packaging.
Return procedure for SI823H5BD-IS3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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