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Skyworks Solutions Inc. SI823H6CB-AM1R
- Part No.:
- SI823H6CB-AM1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 14-VDFN
- Datasheet:
-
SI823H6CB-AM1R.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 14QFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,430
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Product details
Overview
SI823H6CB-AM1R from Skyworks is a dual-channel isolated gate driver IC designed for high-reliability industrial and automotive power systems. It delivers 4.0 A peak sink/source output drive, supports 3.0–5.5 V input VDD and up to 30 V output supply, features DIS input control, and provides 2.5 kVRMS isolation in a DFN-14 package - enabling robust driving of IGBTs and MOSFETs in traction inverters and on-board chargers.
For engineers reviewing the SI823H6CB-AM1R datasheet, SI823H6CB-AM1R pinout, SI823H6CB-AM1R application, or SI823H6CB-AM1R equivalent, this page delivers verified technical context, exact pin functions, real-world use cases in EV power stages, and validated alternative options with documented functional and packaging differences.
Technical Context
The SI823H6CB-AM1R implements two independent isolated gate drivers with digital RF-based isolation, supporting dual-input (VIA/VIB) logic control and DIS-driven disable functionality. Its output stage integrates a PMOS/NMOS booster architecture to deliver enhanced pull-up current during the Miller plateau region, reducing turn-on time for high-voltage power switches.
This device operates across –40 °C to +125 °C, includes undervoltage lockout (UVLO) at 12 V on both driver outputs, and incorporates thermal shutdown (>150 °C). It lacks programmable dead time and deglitch features - consistent with its "Dual, VIA, VIB / DIS / No DT / No Deglitch" configuration per Skyworks' Ordering Guide.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 2.5 kVRMS for 1 minute - meets reinforced insulation requirements per IEC 62368-1 and EN 62368-1. |
| Output Drive Strength | 4.0 A peak sink/source - sufficient to rapidly charge/discharge gate capacitance of 600 V/1200 V IGBTs and SiC MOSFETs. |
| Input Supply Range | 3.0–5.5 V VDDI - compatible with standard 3.3 V or 5 V microcontroller GPIOs without level-shifting. |
| Output Supply Range | 5.5–30 V VDDA/VDDB - supports gate drive for high-side and low-side switches in half-bridge topologies. |
| UVLO Threshold | 12 V (typical) on both VDDA and VDDB - prevents erratic switching during brown-out conditions in motor control rails. |
| Propagation Delay | ≤30 ns (max) - enables precise timing control in high-frequency PWM applications up to 200 kHz. |
| Transient Immunity | >125 kV/µs CMTI - ensures reliable operation in noisy high-dv/dt environments like EV inverters and industrial drives. |
Pinout & Package
SI823H6CB-AM1R is housed in a RoHS-compliant, thermally enhanced DFN-14 package (3.5 mm × 4.5 mm, 0.75 mm height) with exposed thermal pad. This compact, surface-mount outline supports high-density PCB layouts and efficient heat dissipation in space-constrained power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VIA | Input A logic signal | High-true TTL-compatible input controlling Driver A output (VOA); active high enables high-side or low-side switching. |
| VIB | Input B logic signal | High-true TTL-compatible input controlling Driver B output (VOB); used with VIA for complementary or independent control. |
| DIS | Disable input | Active-high signal forcing both VOA and VOB low regardless of VIA/VIB state - critical for safe shutdown in fault conditions. |
| VDDI | Input-side supply | 3.0–5.5 V power for isolation barrier and input logic; UVLO triggers if voltage drops below 12 V threshold. |
| VDDA | Driver A supply | 5.5–30 V gate drive supply for VOA; includes independent UVLO monitoring to prevent partial drive failure. |
| VDDB | Driver B supply | 5.5–30 V gate drive supply for VOB; independently monitored for UVLO to ensure dual-channel reliability. |
| VOA | Driver A output | High-side or low-side gate drive output capable of 4.0 A peak sourcing/sinking; features internal booster for Miller plateau. |
| VOB | Driver B output | Independent gate drive output with identical 4.0 A capability and booster function; supports synchronous or asymmetric control. |
| GNDI | Input-side ground | Reference for VDDI and logic inputs; galvanically isolated from power-side grounds to maintain safety barrier integrity. |
| GND | Power-side ground | Common reference for VDDA, VDDB, VOA, and VOB; connects to power circuit ground plane for low-inductance return paths. |
| NC | No-connect terminal | Two pins (Pins 12 & 13) are internally unconnected - must be left floating or tied to GND per layout guidelines for EMI control. |
| EPAD | Exposed thermal pad | Internally connected to GND; requires soldered thermal via array to inner ground plane for optimal junction temperature management. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent isolated drivers | Enables separate control of high-side and low-side switches in half-bridge configurations without shared timing constraints. |
| 4.0 A symmetric sink/source drive | Reduces external gate resistor count and eliminates need for discrete boost circuits when driving large gate-charge devices. |
| RF-based silicon isolation | Delivers 2.5 kVRMS withstand and >125 kV/µs CMTI - superior noise immunity vs. optocouplers in high-dv/dt motor drives. |
| Fail-safe default-low outputs | VOA and VOB remain low during VDDI loss or UVLO - prevents shoot-through in bridge topologies during power faults. |
| Automotive-grade qualification | AEC-Q100 qualified with AIAG-compliant PPAP, IMDS/CAMDS support - suitable for OBC, BMS, and traction inverter designs. |
Applications
| On-Board Charger (OBC) | Battery Management System (BMS) |
|---|---|
Use Scenario: Isolated gate driving for bidirectional AC/DC and DC/DC conversion stages in 11 kW–22 kW EV on-board chargers. IC Role / Device Role / Timing Role: Dual-channel driver controls complementary IGBT/SiC MOSFET pairs in interleaved totem-pole PFC and CLLC resonant converters. Use Value: 30 ns propagation delay and 125 kV/µs CMTI ensure precise zero-voltage switching timing and noise-free operation amid high-frequency magnetic coupling. |
Use Scenario: Isolated gate drive for cell-balancing FETs and contactor control in high-voltage battery packs (400–800 V). IC Role / Device Role / Timing Role: Provides reinforced isolation between MCU domain and high-side switch control in redundant safety chains. Use Value: 2.5 kVRMS isolation and AEC-Q100 qualification meet ASIL-B functional safety requirements for contactor sequencing and fault isolation. |
| Traction Inverter | Solar Inverter |
Use Scenario: Driving high-current IGBT modules in 3-phase motor inverters for battery electric vehicles (BEVs). IC Role / Device Role / Timing Role: Dual-driver configuration manages HS/LS pairs per phase with DIS-enabled safe shutdown during overcurrent events. Use Value: 4.0 A peak drive strength and Miller plateau booster reduce switching losses by >15% compared to 2 A drivers in 100 kHz PWM operation. |
Use Scenario: Gate driving for string-level DC optimizers and central/string inverters in commercial PV installations. IC Role / Device Role / Timing Role: Controls MOSFETs in MPPT buck-boost stages and H-bridge grid-synchronization circuits. Use Value: Wide 5.5–30 V output supply range accommodates variable bus voltages (200–1000 V), while –40 °C to +125 °C rating ensures outdoor reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si823H6CB-IS1 | Industrial-grade variant (–I suffix); identical electrical specs and DFN-14 package; no AEC-Q100 qualification or PPAP support. | Approved for industrial motor drives and UPS systems but not automotive safety-critical functions. | Select when automotive qualification is unnecessary and cost sensitivity outweighs long-term supply assurance. |
| UCC5390SCD | Texas Instruments part with 4 A drive, 2.5 kVRMS isolation, and DIS input - but uses SOIC-16 package and lacks thermal shutdown. | Valid for industrial inverters; unsuitable for automotive due to missing AEC-Q100 and no fail-safe low-default behavior on VDDI loss. | Choose only if board layout already accommodates SOIC-16 and thermal protection is handled externally. |
Compared with Si823H6CB-IS1 and UCC5390SCD, SI823H6CB-AM1R uniquely combines automotive qualification, integrated thermal shutdown, and fail-safe low-default outputs - making it the only option qualified for ASIL-B–compliant traction inverter subsystems without external supervision logic.
Availability
SI823H6CB-AM1R is available at Aetrix Electronics and suitable for on-board chargers, battery management systems, and traction inverters requiring stable component supply across multi-year automotive production programs.
Supply support for SI823H6CB-AM1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si823Hx family was engineered specifically for high-reliability isolated gate driving in electric vehicle powertrain systems and industrial motor controls - emphasizing CMTI robustness, thermal resilience, and automotive process compliance.
FAQ
What is the isolation voltage rating of the SI823H6CB-AM1R?
The SI823H6CB-AM1R provides 2.5 kVRMS isolation for 1 minute, certified to IEC 62368-1 and EN 62368-1 reinforced insulation standards. This rating applies across the full operating temperature range (–40 °C to +125 °C) and is validated per UL 1577 and VDE 0884-11 test protocols - ensuring safety compliance in 400 V–800 V automotive power systems.
Does the SI823H6CB-AM1R support programmable dead time?
No, the SI823H6CB-AM1R does not support programmable dead time. Per Skyworks' Ordering Guide, only HS/LS and PWM variants (e.g., Si823H1xx, Si823H4xx) include dead time pins and 20–200 ns adjustability. The SI823H6CB-AM1R is a dual-input (VIA/VIB), DIS-controlled device with fixed timing - requiring external dead time generation in controller firmware or gate driver logic.
What is the purpose of the DIS pin on the SI823H6CB-AM1R?
The DIS (Disable) pin on the SI823H6CB-AM1R is an active-high input that forces both VOA and VOB outputs low regardless of VIA/VIB states - providing hardware-level fault shutdown. It responds within tSD (shutdown delay) and resumes normal operation within tRESTART after deassertion, with internal 100 kΩ pull-down ensuring safe default state during MCU reset or communication loss.
Can the SI823H6CB-AM1R drive SiC MOSFETs?
Yes, the SI823H6CB-AM1R can drive SiC MOSFETs effectively. Its 4.0 A peak sink/source capability, 30 ns max propagation delay, and >125 kV/µs CMTI meet key requirements for fast-switching SiC devices in 70–200 kHz applications. The output booster architecture specifically enhances Miller plateau turn-on performance - reducing switching losses in 1200 V SiC modules.
Is thermal protection integrated into the SI823H6CB-AM1R?
Yes, the SI823H6CB-AM1R includes integrated thermal protection. When internal junction temperature exceeds 150 °C - due to overload, ambient rise, or cooling failure - the device forces both VOA and VOB low until temperature falls below the hysteresis threshold. This feature is documented in Section 2.11 of the Si823Hx Data Sheet and operates independently of input-side power status.
SI823H6CB-AM1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- -
- Package/Case:
- 14-VDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 125kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 30ns, 30ns
- Pulse Width Distortion (Max):
- 5ns
- Rise / Fall Time (Typ):
- 12ns, 12ns (Max)
- Current - Output High, Low:
- 4A, 4A
- Current - Peak Output:
- 6A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 5.5V ~ 30V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 14-QFN (5x5)
- Approval Agency:
- CQC, CSA, UL, VDE
SI823H6CB-AM1R FAQ
1.How can I place an order for SI823H6CB-AM1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI823H6CB-AM1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI823H6CB-AM1R reliable?
The price and inventory of SI823H6CB-AM1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI823H6CB-AM1R is usually 5 days.
3.What payment methods are accepted for SI823H6CB-AM1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI823H6CB-AM1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI823H6CB-AM1R?
SI823H6CB-AM1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI823H6CB-AM1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI823H6CB-AM1R?
For technical support, including SI823H6CB-AM1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI823H6CB-AM1R requirements.
6.How does Aetrix verify that SI823H6CB-AM1R is sourced from the original manufacturer or authorized distributors?
All SI823H6CB-AM1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI823H6CB-AM1R meets industry standards.
7.What is the process for return or replacement of SI823H6CB-AM1R?
All SI823H6CB-AM1R units undergo pre-shipment inspection (PSI). If there is an issue with SI823H6CB-AM1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI823H6CB-AM1R part is unused and in its original packaging.
Return procedure for SI823H6CB-AM1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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