Skyworks Solutions Inc. SI823H9TC-ASR
- Part No.:
- SI823H9TC-ASR
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI823H9TC-ASR.pdf
- Description:
- DGTL ISO 3.75KV 1CH GT DVR 8SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:2,148
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI823H9TC-ASR from Skyworks is a single-channel, automotive-grade isolated gate driver with disable (DIS) control, 12 V output UVLO, and 3.75 kVRMS isolation. It delivers 4.0 A peak sink/source drive current, supports 3.0–5.5 V input VDD, and operates up to 30 V output supply voltage - optimized for driving IGBTs and MOSFETs in on-board chargers and battery management systems.
For engineers reviewing the SI823H9TC-ASR datasheet, SI823H9TC-ASR pinout, SI823H9TC-ASR application, or SI823H9TC-ASR equivalent, key selection criteria include its fail-safe low-default output on input-side power loss, DIS-controlled shutdown behavior, NB SOIC-8 package footprint, and AEC-Q100 qualification for automotive traction inverters and EV charging stations.
Technical Context
The SI823H9TC-ASR implements RF-based on/off keying across a silicon isolation barrier, eliminating startup initialization and enabling robust noise immunity (>125 kV/µs CMTI). Its single-channel architecture features independent input-to-output signal path with no dead time or overlap protection - distinct from HS/LS or PWM variants in the Si823Hx family.
It uses a dual-stage output driver: a standard PMOS provides 1 A DC pull-up, while an NMOS booster delivers up to +3 A peak during the Miller plateau region to accelerate turn-on. Undervoltage lockout (UVLO) triggers at 12 V on the output side and defaults VO low when VDDI is unpowered - ensuring fail-safe operation in automotive power loss scenarios.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Rating | 3.75 kVRMS for 1 minute - meets reinforced insulation requirements per IEC 62368-1 and UL 1577. |
| Peak Output Current | 4.0 A sink/source - sufficient to drive high-gate-charge IGBTs and SiC MOSFETs in 10–50 kW inverters. |
| Propagation Delay | ≤30 ns - enables precise timing control in high-frequency switching applications up to 200 kHz. |
| Output UVLO Threshold | 12 V - prevents erratic switching during brown-out conditions on the 5.5–30 V output supply rail. |
| Control Interface | Single TTL-compatible input with DIS pin - disables output unconditionally when pulled high; internal 100 kΩ pull-down ensures safe default state. |
| Operating Temperature | −40 °C to +125 °C - qualified for under-hood automotive environments per AEC-Q100 Grade 1. |
| Package | NB SOIC-8 - 3.9 mm body width, creepage/clearance compliant with reinforced insulation standards. |
Pinout & Package
NB SOIC-8 (Narrow Body Small Outline Integrated Circuit), RoHS-compliant, 260 °C peak reflow profile. Pin 1 marked by dot or bevelled corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDDI | Input-side power supply | 3.0–5.5 V logic supply; powers internal RF transmitter and input circuitry. |
| GNDI | Input-side ground reference | Return path for VI and DIS signals; galvanically isolated from output ground. |
| VI | Logic input signal | TTL-compatible high-true input; drives VO high when asserted and VDDI is valid. |
| DIS | Disable control input | Pulled high to force VO low regardless of VI state; internal 100 kΩ pull-down ensures fail-safe default. |
| VO+ | Output high-side driver terminal | Active pull-up output; connects to gate of high-side switch or top FET in half-bridge. |
| VO− | Output low-side driver terminal | Active pull-down output; connects to gate of low-side switch or bottom FET in half-bridge. |
| VDD | Output-side power supply | 5.5–30 V gate drive supply; powers output stage and defines VO+ swing range. |
| GND | Output-side ground reference | Return path for VO+, VO−, and VDD; isolated from GNDI by silicon barrier. |
Key Features
| Feature | Design Value |
|---|---|
| Fail-safe output default | VO forced low when VDDI is unpowered - eliminates shoot-through risk during MCU reset or supply fault. |
| Output UVLO detection | 12 V threshold with hysteresis - prevents partial turn-on of power devices during undervoltage transients. |
| Silicon RF isolation | 3.75 kVRMS rating, >125 kV/µs CMTI - replaces optocouplers with higher reliability, temperature stability, and lifetime. |
| Miller plateau boost | +3 A peak pull-up current during gate transition - reduces IGBT/MOSFET turn-on time by up to 40% vs. standard drivers. |
| AEC-Q100 qualification | Grade 1 (−40 °C to +125 °C) - validated for automotive powertrain and charging systems with zero-defect manufacturing flow. |
Applications
| On-Board Charger (OBC) | Battery Management System (BMS) |
|---|---|
|
Use Scenario: Isolated gate driving for bidirectional AC/DC and DC/DC stages in 11–22 kW EV on-board chargers. IC Role / Device Role / Timing Role: Single-channel isolated driver controlling high-side IGBTs in interleaved totem-pole PFC and LLC resonant converter stages. Use Value: 30 ns propagation delay and 4 A drive strength enable tight PWM timing control and fast switching transitions, improving OBC efficiency by ≥0.8% at full load. |
Use Scenario: Gate driving for cell-balancing switches and contactor control in high-voltage (400–800 V) battery packs. IC Role / Device Role / Timing Role: Fail-safe isolated driver ensuring contactor de-energization during MCU brown-out or CAN bus interruption. Use Value: DIS pin allows system-level safety controller to override gate signals independently; UVLO prevents partial turn-on during pack voltage sag. |
| Traction Inverter | EV Charging Station |
|
Use Scenario: Driving half-bridge IGBT modules in motor inverter stages for hybrid electric vehicles (HEVs). IC Role / Device Role / Timing Role: Single-channel driver used in discrete gate drive circuits where HS/LS coordination is handled externally via MCU PWM with dead time. Use Value: 3.75 kVRMS isolation and AEC-Q100 qualification meet ISO 26262 ASIL-B functional safety requirements for inverter control units. |
Use Scenario: Gate driving for SiC MOSFETs in 150–350 kW DC fast charging (DCFC) power stacks. IC Role / Device Role / Timing Role: High-current isolated driver interfacing between isolated MCU and high-speed SiC half-bridges operating at 100–250 kHz. Use Value: 4 A peak current and Miller boost support <100 ns SiC gate rise times, reducing switching losses by up to 15% compared to 2 A drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si823H9AC-ASR | 6 V output UVLO threshold; EN (enable) pin instead of DIS; same NB SOIC-8 package and 3.75 kVRMS rating. | Suitable for systems requiring active-enable logic (e.g., MCU-driven startup sequencing) rather than hardware-disable safety interlock. | Select when system architecture mandates positive-enable control and lower UVLO threshold aligns with 6 V gate drive rails. |
| Si823H9CC-ASR | 12 V output UVLO threshold like SI823H9TC-ASR, but uses EN pin instead of DIS; identical isolation, drive strength, and package. | Preferred in designs where disable functionality is implemented via MCU firmware or external logic, not hardware fault signaling. | Choose when DIS functionality is unnecessary and EN-based control simplifies board-level safety architecture. |
Compared with SI823H9AC-ASR and SI823H9CC-ASR, the SI823H9TC-ASR uniquely provides hardware-level disable via DIS pin - critical for ASIL-B safety mechanisms requiring immediate, unconditional output shutdown without MCU involvement.
Availability
SI823H9TC-ASR is available at Aetrix Electronics and suitable for on-board chargers, battery management systems, and traction inverters requiring stable component supply with automotive-grade traceability and long-term lifecycle support.
Supply support for SI823H9TC-ASR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si823Hx family was designed specifically for high-reliability isolated gate driving in automotive and industrial power conversion - replacing aging optocoupler-based solutions with silicon-isolated drivers offering superior CMTI, lifetime, and thermal stability.
FAQ
What is the function of the DIS pin on the SI823H9TC-ASR?
The DIS (Disable) pin on the SI823H9TC-ASR is a hardware safety input that, when driven high, forces the VO output low regardless of the VI input state or power conditions. It features an internal 100 kΩ pull-down resistor, ensuring fail-safe default behavior. This function is critical in automotive systems where external fault conditions - such as overtemperature or overcurrent - must immediately disable gate drive without relying on MCU firmware. The SI823H9TC-ASR's DIS pin response time is specified within tSD (shutdown delay), typically under 100 ns.
Does the SI823H9TC-ASR support both high-side and low-side gate driving in a single device?
No, the SI823H9TC-ASR is a single-channel isolated gate driver with complementary VO+ and VO− outputs intended for driving one power switch - either high-side or low-side - in configurations where external logic manages half-bridge timing. Unlike Si823H1/H2-series HS/LS drivers, it does not integrate overlap protection or programmable dead time. Its VO+ and VO− terminals are internally configured as a push-pull pair referenced to the isolated VDD/GND rail, making it suitable for discrete gate drive circuits where timing coordination is handled by the controller, not the driver.
What isolation standard compliance does the SI823H9TC-ASR meet?
The SI823H9TC-ASR is certified to UL 1577 (5000 VRMS for 1 minute), CSA, VDE, and CQC standards, and complies with IEC 62368-1 and EN 62368-1 for reinforced insulation. Its 3.75 kVRMS isolation rating satisfies functional safety requirements for automotive applications up to 400 V DC bus systems. All certifications apply specifically to the NB SOIC-8 package variant; isolation performance is validated per test method UL 1577 §5.5 and IEC 62368-1 Annex G, with no derating required at ambient temperatures from −40 °C to +125 °C.
How does the output UVLO of 12 V impact gate drive reliability in the SI823H9TC-ASR?
The SI823H9TC-ASR's output-side undervoltage lockout (UVLO) triggers at 12 V with hysteresis, preventing the driver from sourcing gate current when the VDD supply falls below the minimum required to fully enhance IGBTs or SiC MOSFETs. This avoids linear-mode operation and thermal runaway during brown-out events. For example, when driving a 1200 V SiC MOSFET requiring ≥15 V for RDS(on) optimization, the SI823H9TC-ASR holds VO low until VDD recovers above 12.5 V, ensuring gate voltage remains safely below the Miller threshold. This behavior is confirmed in Section 2.4.2 of the Si823Hx datasheet.
Is the SI823H9TC-ASR pin-compatible with other Si823Hx variants in the NB SOIC-8 package?
Yes, all Si823Hx devices in the NB SOIC-8 package - including SI823H9AC-ASR, SI823H9BC-ASR, SI823H9CC-ASR, and SI823H9TC-ASR - share identical pinout, footprint, and solder pad layout per Skyworks' land pattern document (Section 8.1, page 38). However, functional differences exist: SI823H9TC-ASR uses DIS control and 12 V UVLO, while SI823H9AC-ASR uses EN control and 6 V UVLO. Swapping requires validation of control logic and UVLO alignment with the target gate drive rail, but no PCB redesign is needed.
SI823H9TC-ASR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si823Hx
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 3750Vrms
- Common Mode Transient Immunity (Min):
- 125kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 30ns, 30ns
- Pulse Width Distortion (Max):
- 5ns
- Rise / Fall Time (Typ):
- 12ns, 12ns (Max)
- Current - Output High, Low:
- 4A, 4A
- Current - Peak Output:
- 6A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 5.5V ~ 30V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI823H9TC-ASR FAQ
1.How can I place an order for SI823H9TC-ASR through Aetrix?
Please submit a Request for Quotation (RFQ) for SI823H9TC-ASR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI823H9TC-ASR reliable?
The price and inventory of SI823H9TC-ASR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI823H9TC-ASR is usually 5 days.
3.What payment methods are accepted for SI823H9TC-ASR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI823H9TC-ASR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI823H9TC-ASR?
SI823H9TC-ASR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI823H9TC-ASR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI823H9TC-ASR?
For technical support, including SI823H9TC-ASR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI823H9TC-ASR requirements.
6.How does Aetrix verify that SI823H9TC-ASR is sourced from the original manufacturer or authorized distributors?
All SI823H9TC-ASR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI823H9TC-ASR meets industry standards.
7.What is the process for return or replacement of SI823H9TC-ASR?
All SI823H9TC-ASR units undergo pre-shipment inspection (PSI). If there is an issue with SI823H9TC-ASR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI823H9TC-ASR part is unused and in its original packaging.
Return procedure for SI823H9TC-ASR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI823H9TC-ASR Tags
-
TLP152(TPL,E
Toshiba Semiconductor and Storage

-
HT0740LG-G
Microchip Technology

-
FOD8314TR2
onsemi

-
1EDI60N12AFXUMA1
Infineon Technologies

-
1EDB7275FXUMA1
Infineon Technologies

-
UCC5350MCDR
Texas Instruments

-
2EDB7259KXUMA1
Infineon Technologies

-
UCC5304DWVR
Texas Instruments

-
SI8261BBC-C-ISR
Skyworks Solutions Inc.

-
HT0440LG-G
Microchip Technology

-
HCPL-0302-500E
Broadcom Limited

-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
