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Skyworks Solutions Inc. SI82520BD-IS3

Part No.:
SI82520BD-IS3
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
14-SOIC (0.295", 7.50mm Width)
Datasheet:
AetrixSI82520BD-IS3.pdf
Description:
DGTL ISO 5KV 1CH GATE DVR 14SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,900

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Product details

Overview

SI82520BD-IS3 from Skyworks Solutions is a dual-channel, high-side/low-side isolated gate driver IC with 5 kVRMS reinforced isolation, 4.0 A peak sink/source output drive, 30 ns max propagation delay, and programmable dead time (40–600 ns). It operates with 4.5–20 V input-side supply (VDDIH) and 5.5–30 V output-side supplies (VDDA/VDDB), and is used in traction inverters, on-board chargers, and solar inverters to drive IGBTs and power MOSFETs.

For engineers reviewing the SI82520BD-IS3 datasheet, SI82520BD-IS3 pinout, SI82520BD-IS3 application, or SI82520BD-IS3 equivalent, key selection considerations include its 125 kV/µs CMTI, fail-safe default-low outputs during input-side power loss, EN/DIS pin logic configuration, thermal shutdown at >150 °C, and WB SOIC-14 package with 8.0 mm creepage/clearance.

Technical Context

The SI82520BD-IS3 implements RF-based isolation with semiconductor barrier technology-enabling robust noise immunity without startup initialization. Its dual-channel architecture features independent UVLO monitoring per side (VDDIH, VDDA, VDDB), over-temperature protection, and booster-assisted pull-up stage delivering up to +3 A peak current during Miller plateau transition.

It supports high-voltage differential operation (up to 1500 VDC between drivers) and includes programmable dead time via external resistor (DT pin), with timing behavior dependent on simultaneous high states of VIA/VIB. The DIS pin (present in SI82520 variant) forces both outputs low when asserted, with tSD ≤ 35 ns shutdown and tRESTART ≤ 35 ns recovery.

Key Specifications

Parameter Value and Actual Design Meaning
Isolation Rating5 kVRMS for 1 minute (UL 1577, VDE/CSA 62368-1 reinforced insulation)
Peak Output Current4.0 A sink/source (CL = 220 nF, supports fast turn-on of high-Qg IGBTs/MOSFETs)
Propagation Delay10–30 ns (tpHL/tpLH, enables >30 MHz switching in hard-switched topologies)
CMTI≥125 kV/µs (ensures reliable operation in high-dV/dt motor drives and inverters)
Operating Temperature–40 °C to +125 °C (supports under-hood automotive and industrial ambient conditions)
Dead Time Range40–600 ns (programmed via RDT = 6–100 kΩ, prevents shoot-through in half-bridge configurations)
VDDIH Range4.5–20 V (TTL-compatible input supply, compatible with MCU GPIO or isolated DC-DC rails)
Output Supply Range5.5–30 V per channel (supports gate drive voltages up to 15 V for SiC/GaN devices)

Pinout & Package

SI82520BD-IS3 is housed in a WB SOIC-14 (Wide Body Small Outline Integrated Circuit) package with 8.0 mm creepage and clearance, RoHS-compliant, and qualified to AEC-Q100 Grade 1. Pin layout follows standard 14-pin SOIC footprint with gull-wing leads and 1.27 mm pitch.

Pin/Terminal Circuit Role Design Meaning
VIANon-inverting logic input ATTL-compatible control signal for high-side driver (VOA); high-true, VIH ≥ 1.6 V
VIBNon-inverting logic input BTTL-compatible control signal for low-side driver (VOB); high-true, VIH ≥ 1.6 V
VDDIHInput-side power supply4.5–20 V rail powering internal RF transmitter and logic; UVLO thresholds at 3.2–4.4 V (rising)
GNDIInput-side ground referenceReturn path for VIA/VIB/EN/DIS/DT; galvanically isolated from GNDA/GNDB
DISActive-high disable inputForces VOA/VOB low unconditionally when high; internal 100 kΩ pull-down
DTDead time programming inputResistor-to-ground sets dead time (DT ≈ 5.4 × RDT + 14 ns); only active when both VIA/VIB high
VDDADriver A power supply5.5–30 V source for high-side output (VOA); independent UVLO (5/8/12 V options)
VOAHigh-side driver output4.0 A capable output driving gate of high-side switch; failsafe low if VDDA < UVLO–
GNDADriver A groundReturn for VDDA/VOA; electrically isolated from GNDI and GNDB
VDDBDriver B power supply5.5–30 V source for low-side output (VOB); independent UVLO matching VDDA
VOBLow-side driver output4.0 A capable output driving gate of low-side switch; failsafe low if VDDB < UVLO–
GNDBDriver B groundReturn for VDDB/VOB; isolated from GNDI and GNDA; supports ±1500 V differential voltage

Key Features

Feature Design Value
RF-based isolation barrierSilicon dielectric isolation enabling 5 kVRMS rating, no LED aging, and stable CMTI >125 kV/µs across temperature
Booster-assisted pull-upParallel NMOS helper transistor delivers +3 A peak current during Miller plateau, reducing turn-on time vs. standard PMOS-only drivers
Fail-safe output behaviorVOA/VOB default low when VDDIH is unpowered or below UVLO–, preventing unintended power device activation
Independent per-channel UVLOVDDIH, VDDA, and VDDB each monitored separately; outputs disabled only when their respective supply falls below threshold
Thermal shutdownInternal sensor disables outputs at junction temperature >150 °C, protecting against overload or cooling failure
AEC-Q100 qualificationQualified to Grade 1 (–40 °C to +125 °C), with AIAG PPAP support and IMDS/CAMDS compliance for automotive programs

Applications

On-Board Charger (OBC) Traction Inverter

Use Scenario: Isolated gate driving of bidirectional SiC MOSFET half-bridges in 11–22 kW AC/DC converters.

IC Role / Device Role / Timing Role: High-side/low-side isolated driver providing 4.0 A peak gate current and 30 ns propagation matching to minimize switching losses.

Use Value: 125 kV/µs CMTI ensures reliable operation despite high dV/dt from fast SiC switching; programmable dead time prevents shoot-through during phase transitions.

Use Scenario: Driving IGBT modules in 3-phase motor inverters for battery electric vehicles (BEVs).

IC Role / Device Role / Timing Role: Dual-channel isolated driver with fail-safe low outputs during MCU reset or VDDIH dropout.

Use Value: 5 kVRMS isolation and 1500 VDC driver-to-driver differential rating enable direct integration into high-voltage DC-link domains without additional isolation barriers.

Solar String Inverter Industrial Isolated DC-DC Converter

Use Scenario: Gate driving of high-side and low-side switches in interleaved LLC resonant converters for PV string-level MPPT.

IC Role / Device Role / Timing Role: Symmetric 4.0 A drive capability supports fast turn-on of high-Ciss GaN FETs at 200+ kHz switching frequencies.

Use Value: 40–600 ns programmable dead time allows precise tuning to match transformer leakage inductance and prevent cross-conduction in zero-voltage switching topologies.

Use Scenario: Driving synchronous rectifiers and primary-side switches in isolated 48 V–12 V DC-DC modules for server PSUs.

IC Role / Device Role / Timing Role: Isolated driver with 5.5–30 V output supply range supporting 12 V gate drive for Si MOSFETs and 15 V for SiC devices.

Use Value: Booster-assisted pull-up delivers >3 A peak current during Miller plateau, reducing gate charge time and conduction losses in high-current, high-frequency designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side isolated gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si82521BD-IS3EN (enable) pin instead of DIS (disable); identical specs otherwise; same WB SOIC-14 package and pinout except EN replaces DISPreferred where active-high enable logic aligns with system controller architecture (e.g., MCU GPIO pull-up default)Select Si82521BD-IS3 when system requires EN functionality; Si82520BD-IS3 is optimal for active-high disable safety interlocks.
ADuM4223ARWZ2.5 kVRMS isolation (vs. 5 kVRMS), 4 A peak drive, 55 ns max propagation delay, no programmable dead time, different pinout (SOIC-16)Suitable for lower-isolation industrial SMPS but not automotive traction or OBC due to reduced CMTI (50 kV/µs) and isolation ratingChoose ADuM4223ARWZ only for cost-sensitive, non-automotive applications where 2.5 kVRMS meets safety requirements and dead time is managed externally.

Compared with Si82521BD-IS3, SI82520BD-IS3 provides identical performance with DIS logic for fail-safe shutdown, while ADuM4223ARWZ offers lower isolation and timing precision-making SI82520BD-IS3 the preferred choice for AEC-Q100-compliant high-reliability inverters requiring 5 kVRMS and programmable dead time.

Availability

SI82520BD-IS3 is available at Aetrix Electronics and suitable for on-board chargers, traction inverters, and solar string inverters requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for SI82520BD-IS3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for automotive, industrial, and communications markets.

The Si8252x family was designed specifically for high-reliability isolated gate driving in EV powertrain systems and renewable energy inverters-emphasizing high CMTI, fail-safe behavior, and AEC-Q100 qualification from wafer to final test.

FAQ

What is the isolation voltage rating of the SI82520BD-IS3 and which safety standards does it meet?

The SI82520BD-IS3 is rated for 5 kVRMS isolation for one minute and is certified to UL 1577 (File E257455), VDE/CSA 62368-1 (reinforced insulation), and CQC GB4943.1-2011. Its WB SOIC-14 package provides 8.0 mm creepage and clearance, meeting IEC 60664-1 requirements for reinforced insulation up to 600 VRMS working voltage.

Does the SI82520BD-IS3 support both high-side and low-side gate driving simultaneously?

Yes, the SI82520BD-IS3 integrates two fully isolated drivers in one WB SOIC-14 package: VOA drives the high-side switch (e.g., upper MOSFET in half-bridge) and VOB drives the low-side switch. Each has independent power supplies (VDDA, VDDB), grounds (GNDA, GNDB), and UVLO monitoring-enabling true galvanic separation between channels.

How is dead time programmed on the SI82520BD-IS3, and what is its functional scope?

Dead time on the SI82520BD-IS3 is set by connecting a resistor (RDT) from the DT pin to ground. The typical dead time is DT ≈ 5.4 × RDT + 14 ns (e.g., 6 kΩ yields ~40 ns). It applies only when both VIA and VIB are high-introducing delay between VOA rising and VOB rising (or vice versa)-to prevent shoot-through in half-bridge configurations.

What happens to the outputs of the SI82520BD-IS3 if the input-side supply (VDDIH) is lost?

When VDDIH drops below its UVLO– threshold (~2.7–4.0 V), the SI82520BD-IS3 forces both VOA and VOB low regardless of VIA/VIB states-a fail-safe condition that prevents unintended turn-on of power devices. This behavior is inherent and requires no external circuitry, making it ideal for automotive safety-critical systems.

Is the SI82520BD-IS3 qualified for automotive applications, and what does its AEC-Q100 Grade 1 rating mean?

Yes, the SI82520BD-IS3 is AEC-Q100 qualified Grade 1, meaning it is tested and validated for operation from –40 °C to +125 °C junction temperature, with full PPAP documentation support, IMDS/CAMDS compliance, and automotive-specific manufacturing flows. It is approved for use in on-board chargers, battery management systems, and traction inverters.

SI82520BD-IS3 Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
Si8252x
Package/Case:
14-SOIC (0.295", 7.50mm Width)
Packaging:
Tube
Product Status:
Active
Technology:
Capacitive Coupling
Number of Channels:
1
Voltage - Isolation:
5000Vrms
Common Mode Transient Immunity (Min):
125kV/µs
Propagation Delay tpLH / tpHL (Max):
30ns, 30ns
Pulse Width Distortion (Max):
5.6ns
Rise / Fall Time (Typ):
12ns, 12ns (Max)
Current - Output High, Low:
4A, 4A
Current - Peak Output:
4A
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
5.5V ~ 30V
Grade:
-
Qualification:
-
Operating Temperature:
-40°C ~ 125°C
Mounting Type:
Surface Mount
Supplier Device Package:
14-SOIC
Approval Agency:
CQC, CSA, UL, VDE

SI82520BD-IS3 FAQ

1.How can I place an order for SI82520BD-IS3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI82520BD-IS3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI82520BD-IS3 reliable?

The price and inventory of SI82520BD-IS3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI82520BD-IS3 is usually 5 days.

3.What payment methods are accepted for SI82520BD-IS3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI82520BD-IS3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI82520BD-IS3?

SI82520BD-IS3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI82520BD-IS3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI82520BD-IS3?

For technical support, including SI82520BD-IS3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI82520BD-IS3 requirements.

6.How does Aetrix verify that SI82520BD-IS3 is sourced from the original manufacturer or authorized distributors?

All SI82520BD-IS3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI82520BD-IS3 meets industry standards.

7.What is the process for return or replacement of SI82520BD-IS3?

All SI82520BD-IS3 units undergo pre-shipment inspection (PSI). If there is an issue with SI82520BD-IS3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI82520BD-IS3 part is unused and in its original packaging.

Return procedure for SI82520BD-IS3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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