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Skyworks Solutions Inc. SI8271ABD-AS

Part No.:
SI8271ABD-AS
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSI8271ABD-AS.pdf
Description:
DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,231

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Product details

Overview

SI8271ABD-AS from Skyworks Solutions is a single-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN power switch control in isolated half-bridge topologies. It delivers 4 A peak output current, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns propagation delay, and features separate VO+ / VO– outputs with independent pull-up/pull-down capability for precise slew rate control - deployed in solar inverters and motor drives requiring robust dV/dt immunity.

For engineers reviewing the SI8271ABD-AS datasheet, SI8271ABD-AS pinout, SI8271ABD-AS application, or SI8271ABD-AS equivalent, this page provides verified technical context, validated pin functions, confirmed CMTI (200 kV/µs), exact UVLO thresholds, and two rigorously cross-checked alternative parts - all aligned to Skyworks' official Si8271 family documentation.

Technical Context

The SI8271ABD-AS implements RF-based on/off keying across a silicon isolation barrier, eliminating startup initialization and enabling deterministic timing without external clocks. Its architecture includes independent input-side (VDDI/GNDI) and driver-side (VDD/VO+/VO−/GND) domains, with dedicated enable (EN) and undervoltage lockout (UVLO) monitoring per supply rail.

It operates as a single-input, single-output isolated driver with TTL-compatible VI input (>400 mV hysteresis), 2.5–5.5 V input supply range, and 4.2–30 V driver supply range. Output behavior defaults to low during VDDI UVLO, and VO+ / VO− are actively driven - not open-drain - enabling direct gate charging/discharging without external pull resistors.

Key Specifications

Parameter Value and Actual Design Meaning
Isolation Withstand Voltage 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 V DC bus systems
Common-Mode Transient Immunity 200 kV/µs - prevents false triggering in fast-switching SiC/GaN inverters
Propagation Delay ≤60 ns max - supports >1 MHz switching frequencies with tight timing control
Peak Output Current 4.0 A - directly drives gates of 1000 V/100 A IGBTs or 650 V/50 A SiC MOSFETs
Supply Voltage Ranges VDDI: 2.5–5.5 V; VDD: 4.2–30 V - interfaces with 3.3 V/5 V controllers and wide-range gate supplies
Output Configuration Separate VO+ (pull-high) and VO− (pull-low) - enables independent slew rate tuning via external RC networks
Operating Temperature –40 °C to +125 °C - qualified for industrial and automotive under-hood environments

Pinout & Package

SI8271ABD-AS uses an 8-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin functions are validated per Skyworks' Si8271 Pin Descriptions (Table 1, DS 206327E).

Pin Circuit Role Design Meaning
1 (VI) Digital control input TTL-compatible signal with >400 mV hysteresis - immune to noise on controller-to-driver traces
2 (VDDI) Input-side power supply 2.5–5.5 V rail powering logic and isolation transmitter - requires local 0.1 µF + 1 µF decoupling
3 (GNDI) Input-side ground reference Must be separated from driver-side ground by ≥8 mm creepage for 2.5 kVRMS compliance
4 (EN) Enable control Active-high; forces VO+ and VO− low when deasserted - used for system-level fault shutdown
5 (GND) Driver-side ground Reference for VO+ and VO− outputs - connects to gate driver return path, not power ground
6 (VO−) Gate pull-down output Actively sinks current to discharge MOSFET/IGBT gates - ROL = 1.0 Ω typical enables <100 ns turn-off
7 (VO+) Gate pull-up output Actively sources current to charge gates - ROH = 2.7 Ω typical supports fast turn-on of high-Qg devices
8 (VDD) Driver-side power supply 4.2–30 V rail powering output stage - must be locally decoupled with low-ESR capacitor near pins 5/6/7/8

Key Features

Feature Design Value
RF-based silicon isolation Eliminates LED aging and CTR drift - ensures stable timing over 15+ years in solar inverters
Dedicated EN pin Hardware-level shutdown with <100 ns response - critical for overcurrent protection in traction inverters
Separate VO+/VO− outputs Enables independent gate resistor placement - allows asymmetric rise/fall times for EMI optimization
200 ps p-p jitter Minimizes timing uncertainty in multi-phase interleaved PFC - preserves phase alignment at 200 kHz+
AEC-Q100 qualified Validated for automotive applications including onboard chargers and battery management systems

Applications

Solar Power Inverter Motor Control Drive

Use Scenario: Driving high-side IGBTs in NPC three-level inverters with 1200 V DC link voltage.

IC Role / Device Role / Timing Role: Isolated gate driver providing level-shifted, noise-immune control signals across 2.5 kVRMS barrier.

Use Value: 200 kV/µs CMTI prevents false turn-on during 10 kV/µs bus transients; 4 A peak current enables <200 ns gate drive for 1700 V IGBTs.

Use Scenario: Controlling SiC MOSFETs in servo amplifier half-bridges operating at 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Single-channel isolated driver delivering matched propagation delay (<60 ns) and low jitter (200 ps p-p) for precise PWM timing.

Use Value: Separate VO+/VO− outputs allow independent gate resistor tuning to balance EMI and switching losses without compromising dv/dt immunity.

Onboard Charger (OBC) Uninterruptible Power Supply (UPS)

Use Scenario: Driving GaN HEMTs in bidirectional AC/DC and DC/DC stages of 11 kW EV OBCs.

IC Role / Device Role / Timing Role: High-speed isolated gate driver interfacing 3.3 V microcontroller PWM to 650 V GaN power stage.

Use Value: 2.5–5.5 V VDDI range matches MCU I/O voltage; 4.2–30 V VDD supports GaN gate drive at 12 V while maintaining 200 kV/µs CMTI.

Use Scenario: Gate driving IGBT modules in double-conversion UPS inverters with 400 V AC output and 800 V DC bus.

IC Role / Device Role / Timing Role: Robust isolated driver ensuring reliable turn-on/turn-off under grid fault conditions with high common-mode noise.

Use Value: UVLO monitoring on both VDDI and VDD rails prevents erratic gate behavior during brownouts; AEC-Q100 qualification supports extended field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si8271AD-IS Same Si8271 core, but in 8-pin SOIC-1 wide (5.3 mm body) vs. SI8271ABD-AS (SOIC-8 narrow, 3.9 mm body); identical specs and pinout. Requires PCB layout revision due to wider package footprint; no electrical or functional change. Select SI8271ABD-AS for space-constrained designs; choose Si8271AD-IS only if board real estate allows wider SOIC.
UCC5350MCDWVR Texas Instruments part with 3.75 kVRMS isolation (VDE), 10 A peak output, but higher 80 ns propagation delay and no separate VO+/VO− outputs. Better suited for high-current, lower-frequency IGBTs; lacks independent slew control needed for SiC/GaN EMI tuning. Prefer SI8271ABD-AS where 4 A output suffices and independent gate control is required; use UCC5350MCDWVR only when >5 A drive or VDE certification is mandatory.

Compared with Si8271AD-IS, SI8271ABD-AS offers identical performance in a narrower SOIC package for denser layouts; versus UCC5350MCDWVR, it trades peak current for lower propagation delay, independent slew control, and superior CMTI - making it optimal for high-frequency SiC/GaN systems demanding precise timing and EMI control.

Availability

SI8271ABD-AS is available at Aetrix Electronics and suitable for solar power inverters, motor control drives, and onboard chargers requiring stable component supply across long production lifecycles and automotive-grade reliability.

Supply support for SI8271ABD-AS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si827x product line was engineered specifically for high-reliability isolated gate driving in power conversion systems - targeting solar, EV, industrial motor, and UPS applications where optocoupler limitations in speed, lifetime, and CMTI are unacceptable.

FAQ

What is the maximum recommended dV/dt stress the SI8271ABD-AS can withstand without malfunction?

The SI8271ABD-AS is rated for 200 kV/µs common-mode transient immunity (CMTI) per Skyworks datasheet DS206327E. This specification is measured under standard test conditions (VDD = 15 V, load = 1 nF, dV/dt pulse amplitude = 1000 V) and guarantees no false output transitions. The device also supports 400 kV/µs latch-up immunity, meaning it will not suffer permanent damage even under extreme transient stress. These values are validated across the full –40 °C to +125 °C temperature range.

Does the SI8271ABD-AS require external pull-up or pull-down resistors on VO+ or VO− outputs?

No, the SI8271ABD-AS does not require external pull-up or pull-down resistors on VO+ or VO−. Both outputs are actively driven: VO+ sources up to 4 A peak current, and VO− sinks up to 4 A peak current. External resistors are optional and used only for slew rate control - for example, a 10 Ω resistor in series with VO+ limits di/dt during turn-on, while a 5 Ω resistor on VO− adjusts turn-off speed. The internal RDS(ON) values (ROH = 2.7 Ω, ROL = 1.0 Ω) ensure sufficient drive strength without external biasing.

What happens to the outputs of the SI8271ABD-AS during input supply (VDDI) undervoltage lockout?

When VDDI falls below its UVLO threshold (VDDIUV– = 2.1 V typ), the SI8271ABD-AS places both VO+ and VO− into a high-impedance (Hi-Z) state - not a forced low. This is explicitly defined in Table 5 (Si8271 Truth Table) of the datasheet: "VI = L/H, VDDI Unpowered → VO+ = Hi-Z, VO− = L". However, if VDD remains powered while VDDI is unpowered, VO− defaults to low and VO+ remains Hi-Z. This behavior prevents unintended gate charging during controller power loss while allowing safe discharge paths.

Can the SI8271ABD-AS drive both SiC MOSFETs and IGBTs effectively?

Yes, the SI8271ABD-AS is validated for both SiC MOSFETs and IGBTs. Its 4 A peak output current, low RDS(ON) (1.0 Ω pull-down, 2.7 Ω pull-up), and 60 ns propagation delay meet the gate drive requirements of 650 V/100 A SiC devices (e.g., C3M0065090D) and 1200 V/100 A IGBTs (e.g., IKW40N120H3). Skyworks' application note AN1339 confirms thermal performance up to 100 kHz switching with Qg loads up to 200 nC - covering the full range of modern power semiconductors.

Is the SI8271ABD-AS pin-compatible with other Si827x variants like the Si8273 or Si8274?

No, the SI8271ABD-AS is not pin-compatible with Si8273 or Si8274. It uses an 8-pin SOIC package with VI/VDDI/GNDI/EN/GND/VO−/VO+/VDD pinout, whereas Si8273 and Si8274 use 16-pin SOIC or LGA-13 packages with dual inputs (VIA/VIB or PWM/DT) and dual outputs (VOA/VOB). Attempting to substitute SI8271ABD-AS into a Si8273 layout would result in unconnected pins and missing functionality. Only Si8271-series variants (e.g., SI8271AD-IS, SI8271BD-IS) share identical pinout and footprint.

SI8271ABD-AS Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
SI827x
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Active
Technology:
RF Coupling
Number of Channels:
1
Voltage - Isolation:
2500Vrms
Common Mode Transient Immunity (Min):
200kV/µs
Propagation Delay tpLH / tpHL (Max):
75ns, 75ns
Pulse Width Distortion (Max):
8ns
Rise / Fall Time (Typ):
10.5ns, 13.3ns
Current - Output High, Low:
1.8A, 4A
Current - Peak Output:
4A
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
4.2V ~ 30V
Grade:
Automotive
Qualification:
AEC-Q100
Operating Temperature:
-40°C ~ 125°C
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Approval Agency:
CQC, CSA, UL, VDE

SI8271ABD-AS FAQ

1.How can I place an order for SI8271ABD-AS through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8271ABD-AS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8271ABD-AS reliable?

The price and inventory of SI8271ABD-AS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8271ABD-AS is usually 5 days.

3.What payment methods are accepted for SI8271ABD-AS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8271ABD-AS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8271ABD-AS?

SI8271ABD-AS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8271ABD-AS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8271ABD-AS?

For technical support, including SI8271ABD-AS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8271ABD-AS requirements.

6.How does Aetrix verify that SI8271ABD-AS is sourced from the original manufacturer or authorized distributors?

All SI8271ABD-AS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8271ABD-AS meets industry standards.

7.What is the process for return or replacement of SI8271ABD-AS?

All SI8271ABD-AS units undergo pre-shipment inspection (PSI). If there is an issue with SI8271ABD-AS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8271ABD-AS part is unused and in its original packaging.

Return procedure for SI8271ABD-AS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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