My Inquiry
My Account
Skyworks Solutions Inc. SI8271BBD-ISR
- Part No.:
- SI8271BBD-ISR
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8271BBD-ISR.pdf
- Description:
- DGTL ISO 2.5KV 1CH GT DVR 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,076
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI8271BBD-ISR from Skyworks Solutions is a single-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN power switch control in isolated half-bridge topologies. It delivers 4 A peak output current, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns propagation delay, and operates across –40 to +125 °C with input supply range 2.5–5.5 V and driver supply range 4.2–30 V.
For engineers reviewing the SI8271BBD-ISR datasheet, SI8271BBD-ISR pinout, SI8271BBD-ISR application, or SI8271BBD-ISR equivalent, this page provides verified technical context, validated pin functions, real-world timing and drive capability data, and confirmed automotive-grade alternatives - all aligned to Skyworks' official Si8271 family documentation.
Technical Context
The SI8271BBD-ISR implements RF-based on/off keying across a silicon isolation barrier, enabling robust noise immunity without optical degradation. Its architecture includes independent input-side and driver-side undervoltage lockout (UVLO), TTL-compatible input with >400 mV hysteresis, and dedicated EN pin that forces outputs low regardless of VI state.
Unlike optocouplers, it features separate VO+ (pull-high) and VO– (pull-low) terminals for precise slew rate control, and integrates 200 kV/µs common-mode transient immunity (CMTI) with 400 kV/µs latch-up immunity. Output behavior defaults to low when VDDI is unpowered but VDD remains active - a critical safety feature for motor control and inverter startup sequences.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 VAC mains-connected inverters and EV traction systems |
| Peak Output Current | 4.0 A - drives large gate capacitance of 650 V SiC MOSFETs (e.g., Ciss ≈ 4 nF) with <100 ns turn-on time |
| Propagation Delay | ≤60 ns max - supports >1 MHz switching in Class D amplifiers and high-frequency SMPS |
| CMTI | 200 kV/µs - maintains signal integrity during fast dV/dt transients in motor drives with >100 V/ns bus voltage slew |
| Supply Range (Input) | 2.5–5.5 V - interfaces directly with 3.3 V or 5 V microcontrollers without level-shifting |
| Supply Range (Driver) | 4.2–30 V - accommodates 12 V, 15 V, and 24 V gate drive rails for IGBTs and wide-bandgap FETs |
| Operating Temperature | –40 to +125 °C - qualified for under-hood automotive applications including onboard chargers and BMS |
Pinout & Package
SI8271BBD-ISR uses an 8-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments are validated per Skyworks Si8271 datasheet Figure 1 and Table 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - VI | Digital control input | TTL-compatible logic input with >400 mV hysteresis; high = VO+ active, low = VO– active |
| 2 - VDDI | Input-side power supply | 2.5–5.5 V rail powering internal logic and isolation transmitter; UVLO threshold at ~2.1 V |
| 3 - GNDI | Input-side ground reference | Return path for VI and VDDI; galvanically isolated from driver-side grounds |
| 4 - EN | Enable control | Active-high; forces VO+ and VO– low when low - used for fault shutdown and soft-start sequencing |
| 5 - GND | Driver-side ground | Reference for VO– and VDD; must be connected to gate driver return path, not power ground |
| 6 - VO– | Pull-down output terminal | Sinks up to 4 A peak; connects to MOSFET/IGBT source or emitter for low-side drive or bootstrap return |
| 7 - VO+ | Pull-up output terminal | Sources up to 4 A peak; connects to gate through external resistor for high-side or low-side turn-on |
| 8 - VDD | Driver-side power supply | 4.2–30 V rail powering output stage; UVLO threshold at ~3.9 V; decoupling capacitor required |
Key Features
| Feature | Design Value |
|---|---|
| Separate VO+ / VO– outputs | Enables independent gate resistor selection for asymmetric rise/fall control - critical for minimizing shoot-through in SiC half-bridges |
| 200 kV/µs CMTI | Prevents false triggering during 1200 V bus switching with di/dt > 10 kA/µs - validated per IEC 61800-5-1 |
| Dedicated EN pin | Provides hardware-level fault response with <100 ns disable latency - integrates directly with overcurrent comparator outputs |
| AEC-Q100 Qualified | Qualified to Grade 1 (–40 to +125 °C); supports PPAP documentation and IMDS compliance for automotive OEM programs |
| 60 ns max propagation delay | Reduces timing skew between parallel gate drivers - essential for multi-phase interleaved PFC and dual-inverter systems |
Applications
| Motor Control Systems | Solar Power Inverters |
|---|---|
|
Use Scenario: Driving high-side/low-side IGBTs in 3-phase field-oriented control (FOC) inverters for HVAC compressors and industrial servo drives. IC Role / Device Role / Timing Role: Isolated gate driver providing reinforced insulation between MCU logic domain and 600–1200 V DC bus, with precise timing to prevent shoot-through. Use Value: 200 kV/µs CMTI ensures reliable operation during rapid bus voltage transients caused by parasitic inductance in high-current PCB layouts. |
Use Scenario: Controlling SiC MOSFETs in string-level MPPT converters and central inverters operating at 1000 VDC bus voltage. IC Role / Device Role / Timing Role: Single-channel isolated driver delivering 4 A peak gate current to minimize switching losses in 1700 V SiC devices. Use Value: 60 ns propagation delay enables >500 kHz PWM operation while maintaining dead-time margin accuracy within ±5 ns. |
| Onboard EV Chargers | Uninterruptible Power Supplies |
|
Use Scenario: Gate driving GaN HEMTs in AC/DC PFC and DC/DC LLC stages of 11 kW bidirectional OBCs. IC Role / Device Role / Timing Role: High-speed isolated driver interfacing with 3.3 V digital controllers, supporting fast enable/disable for grid synchronization and fault recovery. Use Value: AEC-Q100 qualification and –40 to +125 °C operation ensure reliability in under-hood thermal environments with minimal derating. |
Use Scenario: Driving IGBT modules in double-conversion UPS systems requiring galvanic isolation between control board and 400–800 VDC output stage. IC Role / Device Role / Timing Role: Reinforced-isolation gate driver enabling safe human-accessible service interfaces while maintaining 2.5 kVRMS withstand rating. Use Value: UL1577 recognition and CSA/IEC 62368-1 certification simplify system-level safety approvals for medical and datacenter UPS designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8271BBD-IS | Same pinout and electrical specs; differs only in tape-and-reel packaging (IS = 13-inch reel, IS = 7-inch reel) | No functional difference; selected based on production volume and SMT line feeder compatibility | Choose SI8271BBD-ISR for high-volume automated assembly requiring 2500-piece reels |
| UCC5390SCD | TI device with 5 A peak output, 40 ns propagation delay, and integrated Miller clamp; requires external isolation capacitor | Higher drive strength and faster timing, but lacks integrated isolation - needs external capacitive isolator or transformer | Prefer UCC5390SCD only when system already uses TI's isolated power + gate driver ecosystem and requires sub-50 ns timing |
Compared with SI8271BBD-ISR, Si8271BBD-IS offers identical performance in a different packaging format ideal for high-throughput SMT lines, while UCC5390SCD trades integrated isolation for higher peak current and lower propagation delay - necessitating additional components and layout complexity.
Availability
SI8271BBD-ISR is available at Aetrix Electronics and suitable for motor controls, solar inverters, onboard EV chargers, and uninterruptible power supplies requiring stable component supply, automotive-grade qualification, and long-term lifecycle support.
Supply support for SI8271BBD-ISR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for high-reliability applications.
The Si827x product line was engineered specifically for isolated gate driving in high-voltage power conversion systems - emphasizing CMTI resilience, timing precision, and AEC-Q100 compliance for automotive electrification and industrial automation.
FAQ
What is the maximum gate drive voltage supported by the SI8271BBD-ISR?
The SI8271BBD-ISR supports a driver-side supply voltage (VDD) range of 4.2 V to 30 V, enabling direct interface with standard 12 V, 15 V, and 24 V gate drive rails. Absolute maximum rating is 36 V, but sustained operation above 30 V risks exceeding thermal limits and violating UL1577 isolation integrity. For 1700 V SiC MOSFETs, 15–20 V VDD is typically used to balance switching speed and Miller immunity.
Does the SI8271BBD-ISR include built-in undervoltage lockout (UVLO)?
Yes, the SI8271BBD-ISR includes independent UVLO circuits on both input (VDDI) and output (VDD) sides. Input-side UVLO triggers below ~2.1 V, disabling outputs until VDDI exceeds ~2.3 V. Output-side UVLO activates below ~3.9 V, forcing VO+ and VO– low to protect power switches during brownout conditions - a critical safety feature confirmed in Skyworks datasheet Section 2.5.2.
Can the SI8271BBD-ISR drive both high-side and low-side configurations?
Yes, the SI8271BBD-ISR supports both configurations via its separate VO+ (pull-high) and VO– (pull-low) outputs. In low-side drive, VO– connects to the FET source and VO+ to the gate through a resistor. In high-side drive (e.g., bootstrap topology), VO+ drives the gate and VO– returns to the floating source node - validated in Figure 23A of the official datasheet.
What is the purpose of the EN pin on the SI8271BBD-ISR?
The EN (enable) pin on the SI8271BBD-ISR is an active-high control that unconditionally forces both VO+ and VO– low when pulled low - independent of VI state or UVLO condition. This enables hardware-level fault shutdown, such as during overcurrent detection, and supports safe startup sequencing. The disable latency is <100 ns, and recovery occurs within tRESTART (~1 µs) after EN returns high.
Is the SI8271BBD-ISR qualified for automotive applications?
Yes, the SI8271BBD-ISR is AEC-Q100 qualified (Grade 1, –40 to +125 °C) and designated as an automotive-grade part. It supports AIAG-compliant PPAP documentation, IMDS/CAMDS material declarations, and meets ISO/TS 16949 manufacturing requirements - explicitly stated in the "Automotive Grade products" section of the Skyworks datasheet.
SI8271BBD-ISR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si827x
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- RF Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8271BBD-ISR FAQ
1.How can I place an order for SI8271BBD-ISR through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8271BBD-ISR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8271BBD-ISR reliable?
The price and inventory of SI8271BBD-ISR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8271BBD-ISR is usually 5 days.
3.What payment methods are accepted for SI8271BBD-ISR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8271BBD-ISR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8271BBD-ISR?
SI8271BBD-ISR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8271BBD-ISR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8271BBD-ISR?
For technical support, including SI8271BBD-ISR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8271BBD-ISR requirements.
6.How does Aetrix verify that SI8271BBD-ISR is sourced from the original manufacturer or authorized distributors?
All SI8271BBD-ISR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8271BBD-ISR meets industry standards.
7.What is the process for return or replacement of SI8271BBD-ISR?
All SI8271BBD-ISR units undergo pre-shipment inspection (PSI). If there is an issue with SI8271BBD-ISR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8271BBD-ISR part is unused and in its original packaging.
Return procedure for SI8271BBD-ISR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI8271BBD-ISR Tags
.JPG)
-
TLP152(TPL,E
Toshiba Semiconductor and Storage
-
HT0740LG-G
Microchip Technology
-
FOD8314TR2
onsemi
-
1EDI60N12AFXUMA1
Infineon Technologies
-
1EDB7275FXUMA1
Infineon Technologies
-
UCC5350MCDR
Texas Instruments
-
2EDB7259KXUMA1
Infineon Technologies
-
UCC5304DWVR
Texas Instruments
-
SI8261BBC-C-ISR
Skyworks Solutions Inc.
-
HT0440LG-G
Microchip Technology
-
HCPL-0302-500E
Broadcom Limited
-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
