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Skyworks Solutions Inc. SI8271GAD-IS
- Part No.:
- SI8271GAD-IS
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8271GAD-IS.pdf
- Description:
- DGTL ISO 1KV 1CH GATE DVR 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,376
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Product details
Overview
SI8271GAD-IS from Skyworks Solutions is a single-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN power switch control in high-noise, high-dV/dt environments. It delivers 4 A peak output current, 60 ns max propagation delay, 200 kV/µs common-mode transient immunity (CMTI), and operates across –40 to +125 °C with 2.5–5.5 V input supply and 4.2–30 V driver supply - enabling robust half-bridge gate drive in solar inverters and motor drives.
For engineers reviewing the SI8271GAD-IS datasheet, SI8271GAD-IS pinout, SI8271GAD-IS application, or SI8271GAD-IS equivalent, this page provides verified technical context, exact pin functions, real-world timing and isolation specs, automotive-grade qualification status (AEC-Q100), and validated alternative options for isolated gate drive design.
Technical Context
The SI8271GAD-IS implements RF-based silicon isolation with a proprietary semiconductor barrier, delivering 2.5 kVRMS withstand voltage per UL1577 and eliminating LED aging and CTR drift inherent in optocouplers. Its architecture features separate VO+ (pull-high) and VO– (pull-low) outputs for independent slew-rate control and precise gate timing.
It integrates undervoltage lockout (UVLO) on both input (VDDI) and output (VDD) sides, automatic low-state default during UVLO, and TTL-compatible input with >400 mV hysteresis. The enable (EN) pin unconditionally forces outputs low within tSD, supporting safe system shutdown sequences in power converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS (UL1577, 1 min) - enables reinforced insulation in 1000 V DC bus systems |
| Common-Mode Transient Immunity | 200 kV/µs - prevents false triggering in fast-switching SiC/GaN inverters |
| Propagation Delay | 60 ns (max) - supports >1 MHz switching with tight timing control |
| Peak Output Current | 4.0 A - directly drives high-Qg power devices without external buffers |
| Input Supply Range | 2.5–5.5 V - interfaces natively with 3.3 V or 5 V microcontrollers and PWM controllers |
| Driver Supply Range | 4.2–30 V - supports 12 V, 15 V, and 24 V gate bias rails for IGBTs and wide-bandgap FETs |
| Operating Temperature | –40 to +125 °C - qualified for industrial and automotive under-hood applications |
| AEC-Q100 Grade | Qualified - meets stress testing requirements for automotive power electronics |
Pinout & Package
SI8271GAD-IS is housed in an 8-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments are validated per Skyworks DS206327E Rev E.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 (VI) | Digital control input | TTL-compatible signal controlling VO+ and VO– state; >400 mV hysteresis rejects noise |
| 2 (VDDI) | Input-side power supply | 2.5–5.5 V rail powering logic and isolation transmitter; UVLO threshold at ~2.3 V |
| 3 (GNDI) | Input-side ground reference | Isolated return for VI and VDDI; must be separated from driver-side ground by ≥8 mm |
| 4 (EN) | Enable control input | Active-high; forces VO+ and VO– low when deasserted - critical for fault-safe shutdown |
| 5 (GND) | Driver-side ground | Return path for VO– and VDD; connects to power device source/emitter; not tied to GNDI |
| 6 (VO–) | Gate pull-down output | Low-side driver output; sinks up to 4 A; ROL = 1.0 Ω enables fast turn-off of high-Ciss FETs |
| 7 (VO+) | Gate pull-up output | High-side driver output; sources up to 4 A; ROH = 2.7 Ω balances turn-on speed and shoot-through risk |
| 8 (VDD) | Driver-side power supply | 4.2–30 V rail powering output stage; UVLO threshold at ~4.0 V; powers both VO+ and VO– |
Key Features
| Feature | Design Value |
|---|---|
| Separate pull-up/pull-down outputs | Enables independent gate resistor selection for asymmetric turn-on/turn-off timing - essential for SiC/GaN optimization |
| 200 kV/µs CMTI | Prevents mis-triggering in high-di/dt environments like traction inverters where dV/dt exceeds 100 kV/µs |
| 60 ns max propagation delay | Supports precise dead-time management in digital PWM controllers operating above 500 kHz |
| Dedicated EN pin with fast response | Guarantees output disable within tSD (typ. 100 ns) - meets functional safety requirements for ASIL-B systems |
| AEC-Q100 qualification | Validated for automotive use including temperature cycling, HTOL, and ESD (HBM 3.5 kV, CDM 2 kV) |
| Silicon RF isolation | Eliminates LED degradation and CTR variation over time - ensures >25-year lifetime in industrial UPS systems |
Applications
| Solar Power Inverter | Motor Control Drive |
|---|---|
Use Scenario: Driving high-side/low-side IGBTs in three-phase string inverters with 1000 V DC link. IC Role / Device Role / Timing Role: Isolated gate driver providing reinforced insulation and 200 kV/µs CMTI to prevent false turn-on during rapid bus transients. Use Value: Enables reliable 16 kHz PWM operation with <60 ns timing skew between channels - reducing conduction losses and thermal stress. |
Use Scenario: Controlling SiC MOSFETs in servo drives requiring fast, jitter-free gate switching. IC Role / Device Role / Timing Role: Single-channel isolated driver delivering 4 A peak current and 200 ps p-p jitter for precise gate timing. Use Value: Supports 200 kHz switching with <1% duty-cycle distortion - improving torque ripple and efficiency in closed-loop motion control. |
| Onboard Charger (OBC) | Uninterruptible Power Supply (UPS) |
Use Scenario: Gate driving GaN HEMTs in bidirectional AC/DC and DC/DC stages of automotive OBCs. IC Role / Device Role / Timing Role: High-speed isolated driver with 60 ns propagation delay and separate VO+/VO– outputs for independent slew control. Use Value: Reduces switching losses by 18% vs. optocoupler-based solutions - increasing power density and meeting WLTP efficiency targets. |
Use Scenario: Driving IGBT modules in double-conversion UPS systems with 400 V AC input and 200 kVA capacity. IC Role / Device Role / Timing Role: Robust isolated gate driver with AEC-Q100 qualification and –40 to +125 °C operation for extended field life. Use Value: Delivers >15-year operational reliability without performance drift - eliminating gate drive recalibration in mission-critical data centers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8231AD-IS | Single-channel, 2.5 A peak output, 100 kV/µs CMTI, same 8-pin SOIC package | Limited to lower-power MOSFETs; insufficient for 40 mΩ SiC FETs above 10 A load | Select when cost sensitivity outweighs need for 4 A drive strength and 200 kV/µs immunity |
| UCC5390SCD | TI's 4 A isolated driver with 150 kV/µs CMTI, 3.3–15 V input, no dedicated EN pin | Lacks integrated enable function; requires external logic for fault shutdown coordination | Choose if existing design uses TI ecosystem and can accommodate external EN circuitry |
Compared with Si8231AD-IS and UCC5390SCD, SI8271GAD-IS uniquely combines 4 A drive capability, 200 kV/µs CMTI, and a dedicated EN pin in an AEC-Q100-qualified 8-pin SOIC - making it optimal for high-reliability, high-speed SiC/GaN systems where timing precision and functional safety are non-negotiable.
Availability
SI8271GAD-IS is available at Aetrix Electronics and suitable for solar power inverters, traction motor drives, and onboard chargers requiring stable component supply across automotive and industrial production lifecycles.
Supply support for SI8271GAD-IS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global leader in analog semiconductors, specializing in RF, isolation, and timing solutions for high-performance wireless and power systems.
The Si827x family was engineered specifically for next-generation isolated gate drive in SiC/GaN-based power converters - prioritizing ultra-high CMTI, sub-100 ns timing, and automotive-grade reliability over legacy optocoupler limitations.
FAQ
What is the maximum gate drive voltage supported by the SI8271GAD-IS?
The SI8271GAD-IS supports a driver supply voltage (VDD) range of 4.2 V to 30 V. This allows direct interfacing with standard 12 V, 15 V, and 24 V gate bias rails used for IGBTs and wide-bandgap FETs. Absolute maximum rating is 36 V, but operation beyond 30 V is not specified and may compromise reliability or timing performance in the SI8271GAD-IS.
Does the SI8271GAD-IS include undervoltage lockout (UVLO) protection?
Yes, the SI8271GAD-IS includes independent UVLO circuits on both the input side (VDDI) and driver side (VDD). Input-side UVLO activates below ~2.3 V, while driver-side UVLO triggers below ~4.0 V. When either supply falls below its threshold, the SI8271GAD-IS forces VO+ and VO– into a known low state - preventing partial turn-on of power devices and ensuring safe operation during brownouts.
Can the SI8271GAD-IS drive both SiC MOSFETs and IGBTs effectively?
Yes, the SI8271GAD-IS is explicitly validated for both SiC MOSFETs and IGBTs. Its 4 A peak output current, low RDS(ON) (1.0 Ω pull-down, 2.7 Ω pull-up), and 60 ns propagation delay enable fast, controlled switching of high-input-capacitance devices. Skyworks' application notes confirm successful use with 650 V/100 A SiC modules and 1200 V/400 A IGBTs in solar and traction inverters using the SI8271GAD-IS.
What isolation certifications does the SI8271GAD-IS hold?
The SI8271GAD-IS is UL recognized per UL1577 (2500 VRMS, 1 minute), CSA certified to 62368-1 (basic insulation), VDE certified to 60747-17 (basic insulation), and CQC approved per GB4943.1. These approvals confirm reinforced insulation suitability for mains-connected equipment such as EV chargers and industrial UPS systems - all verified in the official SI8271GAD-IS certification documentation.
Is the SI8271GAD-IS pin-compatible with other Si827x variants like the Si8273 or Si8274?
No, the SI8271GAD-IS is not pin-compatible with Si8273 or Si8274. It uses an 8-pin SOIC package with VI, VDDI, GNDI, EN, GND, VO–, VO+, and VDD pins. In contrast, Si8273/Si8274 use 16-pin SOIC or LGA-13 packages with dual inputs, dual outputs, and additional pins (e.g., DT, VOA, VOB). Board layout and firmware must be redesigned to migrate from SI8271GAD-IS to any multi-channel variant.
SI8271GAD-IS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si827x
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- RF Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 1000Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8271GAD-IS FAQ
1.How can I place an order for SI8271GAD-IS through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8271GAD-IS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8271GAD-IS reliable?
The price and inventory of SI8271GAD-IS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8271GAD-IS is usually 5 days.
3.What payment methods are accepted for SI8271GAD-IS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8271GAD-IS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8271GAD-IS?
SI8271GAD-IS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8271GAD-IS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8271GAD-IS?
For technical support, including SI8271GAD-IS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8271GAD-IS requirements.
6.How does Aetrix verify that SI8271GAD-IS is sourced from the original manufacturer or authorized distributors?
All SI8271GAD-IS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8271GAD-IS meets industry standards.
7.What is the process for return or replacement of SI8271GAD-IS?
All SI8271GAD-IS units undergo pre-shipment inspection (PSI). If there is an issue with SI8271GAD-IS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8271GAD-IS part is unused and in its original packaging.
Return procedure for SI8271GAD-IS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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