My Inquiry
My Account
Skyworks Solutions Inc. SI8271GB-ASR
- Part No.:
- SI8271GB-ASR
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8271GB-ASR.pdf
- Description:
- DGTL ISO 2.5KV 1CH GT DVR 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,258
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI8271GB-ASR from Skyworks Solutions is a single-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN power switch control in high-dV/dt environments. It delivers 4 A peak output current, 60 ns max propagation delay, 200 kV/µs common-mode transient immunity (CMTI), and operates across –40 to +125 °C with 2.5–5.5 V input supply and 4.2–30 V driver supply - enabling robust half-bridge gate drive in solar inverters and motor drives.
For engineers reviewing the SI8271GB-ASR datasheet, SI8271GB-ASR pinout, SI8271GB-ASR application, or SI8271GB-ASR equivalent, this page provides verified technical context, exact pin functions, real-world timing and isolation specs, automotive-grade qualification status (AEC-Q100), and validated alternative options for isolated gate drive design.
Technical Context
The SI8271GB-ASR implements RF-based silicon isolation with a proprietary semiconductor barrier, delivering 2.5 kVRMS withstand voltage per UL1577 and eliminating LED aging and temperature drift issues inherent in optocouplers. Its architecture features independent pull-up (VO+) and pull-down (VO–) outputs for precise slew rate control and integrated undervoltage lockout (UVLO) on both input (VDDI) and output (VDD) sides.
It supports TTL-compatible digital input (VI) with >400 mV hysteresis and a dedicated enable (EN) pin that forces outputs low unconditionally. Unlike dual or PWM variants (Si8273/Si8274), the SI8271GB-ASR has no overlap protection or dead-time programmability - its single-input logic directly maps VI state to VO+/VO– complementary drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS (UL1577, 1 min) - enables reinforced insulation in 1000 V DC bus systems |
| Peak Output Current | 4.0 A - sufficient to drive high-gate-charge SiC FETs (e.g., 100 nC Qg) at ≤100 kHz |
| Propagation Delay | 60 ns max - ensures tight timing control in high-frequency LLC and PFC topologies |
| CMTI | 200 kV/µs - prevents false triggering during fast-switching transients in traction inverters |
| Supply Range | VDDI: 2.5–5.5 V; VDD: 4.2–30 V - supports direct interface with 3.3 V/5 V controllers and 12–24 V gate bias rails |
| Operating Temperature | –40 to +125 °C - qualified for under-hood automotive and industrial ambient conditions |
| AEC-Q100 Grade | Qualified - meets stress test requirements for automotive power electronics (Grade 1) |
Pinout & Package
SI8271GB-ASR is housed in an 8-pin SOIC package with gull-wing leads, creepage/clearance optimized for reinforced isolation. Pin 1 (VI) is marked by a dot; pins are arranged with input-side (1–4) and output-side (5–8) grouped separately across the isolation barrier.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (VI) | Digital control input | TTL-compatible signal controlling VO+ (high) and VO– (low) states; >400 mV hysteresis rejects noise |
| 2 (VDDI) | Input-side power supply | Supplies isolator transmitter; must be 2.5–5.5 V; UVLO triggers if <2.1 V (typ) |
| 3 (GNDI) | Input-side ground reference | Return path for VI and VDDI; galvanically isolated from output ground (Pin 5) |
| 4 (EN) | Enable control | Active-high; forces VO+ and VO– low when low - used for fault shutdown or soft-start sequencing |
| 5 (GND) | Output-side ground | Reference for VO+, VO–, and VDD; must be connected to gate driver return path, not controller ground |
| 6 (VO–) | Pull-down output | Sinks up to 4 A; drives gate low during turn-off; ROL = 1.0 Ω (typ) minimizes Miller plateau time |
| 7 (VO+) | Pull-up output | Sources up to 4 A; drives gate high during turn-on; ROH = 2.7 Ω (typ) balances switching speed and EMI |
| 8 (VDD) | Output-side power supply | Supplies gate driver stage; 4.2–30 V range supports 12 V, 15 V, or 20 V gate bias for SiC/GaN devices |
Key Features
| Feature | Design Value |
|---|---|
| RF-based silicon isolation | Eliminates LED degradation; guarantees stable CMTI and timing over 15+ years life vs. optocouplers |
| Separate VO+ / VO– outputs | Enables independent optimization of turn-on and turn-off gate resistors for EMI and shoot-through trade-offs |
| Dedicated EN pin | Provides system-level fault response without requiring controller firmware intervention or reset cycles |
| High dV/dt immunity | 200 kV/µs CMTI ensures reliable operation in 1500 V DC bus inverters with fast SiC switching edges |
| AEC-Q100 qualification | Validated for automotive onboard chargers and battery management systems with zero defect PPAP support |
Applications
| Solar Power Inverter | Industrial Motor Drive |
|---|---|
Use Scenario: Driving high-side IGBTs in three-phase NPC inverters with 1000 V DC link and 20 kHz switching. IC Role / Device Role / Timing Role: Isolated gate driver providing level-shifted, noise-immune control of upper-leg switches with precise 60 ns timing alignment. Use Value: 200 kV/µs CMTI prevents false turn-on during bus transients; 4 A peak current reduces external gate resistor heating and layout parasitics. |
Use Scenario: Controlling 750 V SiC MOSFETs in servo amplifier half-bridges operating at 80 kHz with <100 ns dead time. IC Role / Device Role / Timing Role: Single-channel isolated driver delivering matched rise/fall times and sub-100 ps jitter for accurate PWM fidelity. Use Value: Low 200 ps p-p jitter maintains PWM resolution at high frequencies; wide 4.2–30 V VDD supports 15 V gate bias for robust SiC threshold margin. |
| Onboard Charger (OBC) | Uninterruptible Power Supply (UPS) |
Use Scenario: Gate driving of GaN HEMTs in bidirectional AC/DC PFC stages with 650 V AC input and 400 V DC output. IC Role / Device Role / Timing Role: High-speed isolated driver enabling <50 ns propagation delay and fast 10 ns rise/fall for GaN switching. Use Value: 2.5 kVRMS isolation meets reinforced insulation requirements for EV charging safety standards (IEC 62109); –40 to +125 °C rating covers under-hood thermal cycling. |
Use Scenario: Driving parallel IGBT modules in 30 kVA UPS inverters with 600 V DC bus and 50/60 Hz fundamental output. IC Role / Device Role / Timing Role: Robust isolated driver handling high peak currents and long-term reliability under continuous conduction mode. Use Value: 4 A peak output sustains gate drive during short-circuit events; AEC-Q100 qualification ensures field failure rates <10 FIT in 24/7 operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8271BB-ASR | Same pinout and electrical specs, but rated for –40 to +105 °C (not AEC-Q100 qualified) | Not suitable for automotive under-hood use; limited to industrial/commercial ambient | Select only if AEC-Q100 and extended temperature are not required - lower cost for non-automotive designs |
| UCC5390SCD | TI's 4 A isolated driver with 35 kV/µs CMTI, 45 ns propagation delay, and integrated Miller clamp | Lacks separate VO+/VO– outputs; uses single push-pull output with internal clamping | Prefer when Miller clamping is mandatory for SiC/GaN; accept reduced CMTI margin and different layout constraints |
Compared with SI8271GB-ASR, Si8271BB-ASR offers identical functionality at lower temperature grade and cost, while UCC5390SCD trades CMTI and output flexibility for integrated protection features - making SI8271GB-ASR optimal where dV/dt immunity and independent gate control are critical.
Availability
SI8271GB-ASR is available at Aetrix Electronics and suitable for solar power inverters, electric vehicle onboard chargers, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability.
Supply support for SI8271GB-ASR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global leader in analog and mixed-signal semiconductors, specializing in RF, isolation, timing, and power management solutions for high-performance wireless and power systems.
The Si827x family was engineered specifically for next-generation isolated gate drive in SiC/GaN-based power converters - prioritizing ultra-high CMTI, precise timing, and automotive qualification without optical compromises.
FAQ
What is the isolation voltage rating of the SI8271GB-ASR?
The SI8271GB-ASR is rated for 2.5 kVRMS withstand voltage per UL1577 for one minute, meeting reinforced insulation requirements for 1000 V DC bus applications. This rating is validated across the full temperature range (–40 to +125 °C) and applies to the 8-pin SOIC package's internal silicon dioxide isolation barrier - not dependent on external creepage distance.
Does the SI8271GB-ASR support dual-output or PWM input configurations?
No. The SI8271GB-ASR is strictly a single-channel, single-digital-input (VI) isolated gate driver. It does not support PWM inputs, dual outputs, or overlap protection - those features belong to other members of the Si827x family (e.g., Si8274 for PWM, Si8273 for high-side/low-side). Its VO+ and VO– outputs operate complementarily based solely on the VI logic state.
What is the purpose of the EN pin on the SI8271GB-ASR?
The EN (enable) pin on the SI8271GB-ASR is an active-high control that unconditionally forces both VO+ and VO– outputs low when pulled low - regardless of VI state or supply conditions. This provides hardware-level fault shutdown capability, essential for overcurrent or overtemperature protection circuits in inverters and motor drives using SI8271GB-ASR.
Can the SI8271GB-ASR drive SiC or GaN FETs effectively?
Yes. The SI8271GB-ASR delivers 4 A peak source/sink current, 60 ns max propagation delay, and 200 kV/µs CMTI - all critical for driving high-speed SiC and GaN FETs. Its separate VO+ and VO– outputs allow independent gate resistor selection to optimize switching speed and EMI, while the 4.2–30 V VDD range supports standard 15 V or 20 V gate bias needed for robust SiC threshold margin.
Is the SI8271GB-ASR qualified for automotive applications?
Yes. The SI8271GB-ASR is fully AEC-Q100 qualified (Grade 1: –40 to +125 °C), manufactured using automotive-specific process flows, and supported with AIAG-compliant PPAP documentation. It is explicitly intended for automotive applications including onboard chargers, battery management systems, and traction inverters - confirmed in Skyworks' official ordering guide and datasheet.
SI8271GB-ASR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- SI827x
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- RF Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8271GB-ASR FAQ
1.How can I place an order for SI8271GB-ASR through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8271GB-ASR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8271GB-ASR reliable?
The price and inventory of SI8271GB-ASR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8271GB-ASR is usually 5 days.
3.What payment methods are accepted for SI8271GB-ASR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8271GB-ASR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8271GB-ASR?
SI8271GB-ASR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8271GB-ASR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8271GB-ASR?
For technical support, including SI8271GB-ASR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8271GB-ASR requirements.
6.How does Aetrix verify that SI8271GB-ASR is sourced from the original manufacturer or authorized distributors?
All SI8271GB-ASR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8271GB-ASR meets industry standards.
7.What is the process for return or replacement of SI8271GB-ASR?
All SI8271GB-ASR units undergo pre-shipment inspection (PSI). If there is an issue with SI8271GB-ASR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8271GB-ASR part is unused and in its original packaging.
Return procedure for SI8271GB-ASR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI8271GB-ASR Tags
.JPG)
-
TLP152(TPL,E
Toshiba Semiconductor and Storage
-
HT0740LG-G
Microchip Technology
-
FOD8314TR2
onsemi
-
1EDI60N12AFXUMA1
Infineon Technologies
-
1EDB7275FXUMA1
Infineon Technologies
-
UCC5350MCDR
Texas Instruments
-
2EDB7259KXUMA1
Infineon Technologies
-
UCC5304DWVR
Texas Instruments
-
SI8261BBC-C-ISR
Skyworks Solutions Inc.
-
HT0440LG-G
Microchip Technology
-
HCPL-0302-500E
Broadcom Limited
-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
