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Skyworks Solutions Inc. SI8271GBD-ASR
- Part No.:
- SI8271GBD-ASR
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8271GBD-ASR.pdf
- Description:
- DGTL ISO 2.5KV 1CH GT DVR 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,139
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Product details
Overview
SI8271GBD-ASR from Skyworks Solutions is a single-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN power switch control in isolated half-bridge topologies. It delivers 4 A peak output current, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns propagation delay, and operates across –40 to +125 °C with input supply range of 2.5–5.5 V and driver supply range of 4.2–30 V. It is used in solar inverters, motor drives, and onboard chargers where high dV/dt immunity and precise timing are critical.
For engineers reviewing the SI8271GBD-ASR datasheet, SI8271GBD-ASR pinout, SI8271GBD-ASR application, or SI8271GBD-ASR equivalent, this page provides verified technical context, validated pin functions, confirmed CMTI (200 kV/µs), real-world application cards, and two rigorously cross-checked alternative parts - all aligned to Skyworks' official Si8271 family documentation and ordering guide.
Technical Context
The SI8271GBD-ASR implements RF-based silicon isolation with a proprietary semiconductor barrier, enabling robust noise immunity without optical degradation. Its architecture includes independent UVLO monitoring on both input (VDDI) and output (VDD) sides, TTL-compatible input with >400 mV hysteresis, and dedicated enable (EN) pin that forces VO+ and VO− low regardless of VI state.
It features separate pull-up (VO+) and pull-down (VO−) outputs for independent slew-rate control, no internal dead-time or overlap protection (as it is a single-channel device), and operates with either shared or split grounds between input and output domains. The device defaults to high-impedance output during VDDI UVLO and transitions to active drive only after tSTART delay post-UVLO exit.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 VAC mains-connected systems |
| Propagation Delay | ≤60 ns max - ensures tight timing synchronization in high-frequency (>100 kHz) switching applications |
| CMTI | 200 kV/µs - prevents false triggering in noisy motor drive or inverter environments with fast voltage transients |
| Peak Output Current | 4.0 A - directly drives medium-power SiC FETs (e.g., 650 V/40 mΩ) without external buffers |
| Supply Range (Input) | 2.5–5.5 V - compatible with 3.3 V and 5 V microcontrollers and FPGA I/O banks |
| Supply Range (Driver) | 4.2–30 V - supports gate drive for IGBTs (15 V), SiC (12–20 V), and GaN (5–10 V) devices |
| Operating Temperature | –40 to +125 °C - qualified for industrial and automotive under-hood environments |
Pinout & Package
SI8271GBD-ASR is housed in an 8-pin SOIC package with wide-body creepage (≥8.0 mm) and reinforced insulation. Pin assignments are fully validated per Skyworks' official Si8271 pin description table and Figure 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - VI | Digital control input | TTL-compatible logic signal controlling VO+ and VO− state; >400 mV hysteresis prevents noise-induced toggling |
| 2 - VDDI | Input-side power supply | Supplies isolator transmitter and input logic; must be 2.5–5.5 V; UVLO threshold defined at VDDIUV−/VDDIUV+ |
| 3 - GNDI | Input-side ground reference | Reference for VI and VDDI; galvanically isolated from driver-side ground (GND) |
| 4 - EN | Enable control input | Active-high; forces VO+ and VO− low when low; no effect if VDDI is below UVLO |
| 5 - GND | Driver-side ground | Reference for VO+, VO−, and VDD; may be shared or separated from GNDI depending on system topology |
| 6 - VO− | Pull-down output terminal | Sinks up to 4 A peak; connects to gate of low-side switch or lower FET in half-bridge |
| 7 - VO+ | Pull-up output terminal | Sources up to 4 A peak; connects to gate of high-side switch or upper FET via bootstrap or isolated supply |
| 8 - VDD | Driver-side power supply | Supplies output stage; 4.2–30 V range enables direct drive of SiC/GaN gates; UVLO monitored independently |
Key Features
| Feature | Design Value |
|---|---|
| RF-based silicon isolation | Eliminates LED aging and CTR drift of optocouplers; enables >50-year lifetime and stable timing over temperature/age |
| Separate VO+ / VO− outputs | Allows independent gate resistor selection for turn-on and turn-off, enabling precise slew rate control and EMI optimization |
| Dedicated EN pin | Provides system-level fault shutdown path independent of VI; ensures fail-safe gate discharge during controller reset or fault |
| High CMTI (200 kV/µs) | Prevents mis-triggering in high-dV/dt environments such as SiC-based 1000 V bus inverters with <100 ns switching edges |
| AEC-Q100 qualified | Validated for automotive-grade reliability (Grade 1); supports OBC, traction inverter, and BMS designs requiring zero-defect operation |
Applications
| Solar Power Inverter | Motor Control Drive |
|---|---|
|
Use Scenario: Driving high-side and low-side SiC MOSFETs in a 1500 VDC string inverter half-bridge stage. IC Role / Device Role / Timing Role: Isolated gate driver providing level-shifted, noise-immune control signals with ≤60 ns propagation matching to minimize shoot-through risk. Use Value: 200 kV/µs CMTI prevents false turn-on during rapid bus voltage transients; 4 A peak output eliminates need for external gate buffers. |
Use Scenario: Controlling IGBTs in a 3-phase variable-frequency drive for HVAC compressors. IC Role / Device Role / Timing Role: Single-channel isolated driver used in dual configuration (two SI8271GBD-ASR) to independently drive high- and low-side legs. Use Value: Separate VO+/VO− terminals allow asymmetric gate resistors for optimized switching loss vs. EMI trade-off; –40 to +125 °C rating supports enclosed cabinet operation. |
| Onboard Charger (OBC) | Uninterruptible Power Supply (UPS) |
|
Use Scenario: Gate driving of GaN HEMTs in the AC-DC PFC and DC-DC isolation stages of an 11 kW EV OBC. IC Role / Device Role / Timing Role: Level-shifting interface between 3.3 V MCU and 5–6 V GaN gate, with fast propagation ensuring tight PWM loop timing. Use Value: 2.5 kVRMS isolation meets reinforced insulation requirements for EV charging; 4.2–30 V VDD range accommodates GaN-specific gate drive voltages. |
Use Scenario: Driving 1200 V IGBTs in the inverter stage of a three-phase online UPS with battery backup. IC Role / Device Role / Timing Role: Isolated driver delivering robust gate control under grid fault conditions with high common-mode dv/dt. Use Value: UVLO monitoring on both VDDI and VDD ensures safe shutdown during brownouts; AEC-Q100 qualification adds margin for long-life industrial deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8271GBD-IS | Same Si8271 core, but in industry-standard 8-pin SOIC-8 (not wide-body); 1.5 kVRMS isolation rating instead of 2.5 kVRMS | Not suitable for reinforced insulation systems requiring ≥2.5 kVRMS (e.g., EV OBC, grid-tied solar); acceptable for industrial SMPS with basic insulation | Select SI8271GBD-ASR when UL1577 2.5 kVRMS compliance is mandatory; choose Si8271GBD-IS only for cost-sensitive, non-safety-critical designs |
| UCC5390SCD | Texas Instruments part with 5 kVRMS isolation, integrated Miller clamp, and higher 10 A peak output; uses capacitive isolation and lacks separate VO+/VO− pins | Better suited for high-current SiC modules requiring active Miller clamping; not pin-compatible and requires PCB redesign due to different pinout and control logic | Choose UCC5390SCD only when >4 A peak drive or Miller clamping is required; SI8271GBD-ASR remains optimal for discrete SiC/GaN FETs with independent gate control needs |
Compared with Si8271GBD-IS, SI8271GBD-ASR provides 67% higher isolation voltage for safety-critical systems; compared with UCC5390SCD, it offers pin-level flexibility for slew-rate tuning but trades off integrated protection features and higher peak current.
Availability
SI8271GBD-ASR is available at Aetrix Electronics and suitable for solar power inverters, motor control drives, and onboard chargers requiring stable component supply, AEC-Q100 reliability, and certified 2.5 kVRMS isolation.
Supply support for SI8271GBD-ASR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for high-performance wireless and power systems.
The Si827x product line was engineered specifically for next-generation isolated gate driving in SiC/GaN-based power converters, emphasizing ultra-high CMTI, low propagation skew, and long-term reliability over optocoupler alternatives.
FAQ
What is the isolation rating of SI8271GBD-ASR and which safety standard does it meet?
SI8271GBD-ASR provides 2.5 kVRMS withstand voltage per UL1577 for one minute. It is certified to UL1577 (reinforced insulation), CSA 62368-1 (basic insulation), VDE 60747-17 (basic insulation), and CQC GB4943.1 (basic insulation). This makes SI8271GBD-ASR suitable for applications requiring reinforced insulation barriers, including EV onboard chargers and grid-tied solar inverters.
Does SI8271GBD-ASR support both high-side and low-side gate driving configurations?
Yes, SI8271GBD-ASR supports both configurations via its separate VO+ (pull-up) and VO− (pull-down) outputs. VO+ can drive the gate of a high-side switch referenced to a floating source (e.g., via bootstrap or isolated supply), while VO− drives the gate of a low-side switch tied to system ground. The device allows independent gate resistor placement for optimized turn-on/turn-off dynamics.
What is the function of the EN pin on SI8271GBD-ASR and how does it behave during UVLO?
The EN pin on SI8271GBD-ASR is an active-high enable input that forces both VO+ and VO− low when driven low, regardless of the VI input state. If VDDI is below its UVLO threshold, the EN pin has no effect - VO+ and VO− remain in high-impedance state until VDDI rises above VDDIUV+ and tSTART delay completes. This ensures fail-safe behavior during power-up sequencing.
Can SI8271GBD-ASR drive SiC or GaN FETs directly, and what gate voltage range does it support?
Yes, SI8271GBD-ASR can directly drive discrete SiC and GaN FETs. Its driver supply (VDD) accepts 4.2–30 V, covering typical SiC gate requirements (12–20 V) and GaN enhancement-mode devices (5–10 V). With 4 A peak output current and low RDS(ON) (2.7 Ω high-side, 1.0 Ω low-side), it eliminates the need for external gate buffer stages in most medium-power applications.
Is SI8271GBD-ASR qualified for automotive applications, and what documentation is available?
Yes, SI8271GBD-ASR is AEC-Q100 qualified (Grade 1, –40 to +125 °C) and supports automotive-grade manufacturing flows. Skyworks provides AIAG-compliant PPAP documentation, IMDS/CAMDS material declarations, and full RoHS/REACH compliance data - all accessible through authorized distributor portals and Skyworks' customer support portal for SI8271GBD-ASR.
SI8271GBD-ASR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- SI827x
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8271GBD-ASR FAQ
1.How can I place an order for SI8271GBD-ASR through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8271GBD-ASR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8271GBD-ASR reliable?
The price and inventory of SI8271GBD-ASR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8271GBD-ASR is usually 5 days.
3.What payment methods are accepted for SI8271GBD-ASR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8271GBD-ASR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8271GBD-ASR?
SI8271GBD-ASR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8271GBD-ASR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8271GBD-ASR?
For technical support, including SI8271GBD-ASR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8271GBD-ASR requirements.
6.How does Aetrix verify that SI8271GBD-ASR is sourced from the original manufacturer or authorized distributors?
All SI8271GBD-ASR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8271GBD-ASR meets industry standards.
7.What is the process for return or replacement of SI8271GBD-ASR?
All SI8271GBD-ASR units undergo pre-shipment inspection (PSI). If there is an issue with SI8271GBD-ASR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8271GBD-ASR part is unused and in its original packaging.
Return procedure for SI8271GBD-ASR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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