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Skyworks Solutions Inc. SI8271GBD-ISR
- Part No.:
- SI8271GBD-ISR
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8271GBD-ISR.pdf
- Description:
- DGTL ISO 2.5KV 1CH GT DVR 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,303
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Product details
Overview
SI8271GBD-ISR from Skyworks Solutions is a single-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN power switch control in high-noise, high-dV/dt environments. It delivers 4 A peak output current, 60 ns max propagation delay, 200 kV/µs common-mode transient immunity (CMTI), and operates across –40 to +125 °C with input supply range 2.5–5.5 V and driver supply 4.2–30 V. It is used in solar inverters, motor drives, and onboard chargers where robust isolation and precise timing are critical.
For engineers reviewing the SI8271GBD-ISR datasheet, SI8271GBD-ISR pinout, SI8271GBD-ISR application, or SI8271GBD-ISR equivalent, this page provides verified technical context, validated pin functions, confirmed operating parameters, real-world application mappings, and two rigorously cross-checked alternative parts - all derived exclusively from Skyworks' official Si827x family documentation and ordering guide.
Technical Context
The SI8271GBD-ISR implements a single-channel RF-based silicon isolation architecture with a dedicated VI control input and EN enable pin. Its internal UVLO monitors both input-side (VDDI) and output-side (VDD) supplies independently, forcing VO+ and VO– low during undervoltage conditions.
It features separate pull-up (VO+) and pull-down (VO–) outputs for independent slew-rate control, TTL-compatible input with >400 mV hysteresis, and no overlap protection or dead-time programmability - consistent with its single-driver configuration per Table 4 of the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 VAC systems and meets basic insulation requirements per IEC 62368-1/VDE 60747-17. |
| Peak Output Current | 4.0 A - sufficient to directly drive high-gate-charge SiC and GaN FETs without external buffers in half-bridge topologies. |
| Propagation Delay | 60 ns (max) - supports switching frequencies up to 2 MHz in hard-switched converters with tight timing margins. |
| CMTI | 200 kV/µs - ensures reliable operation in high-di/dt motor drives and inverters with fast voltage transients across isolation barrier. |
| Supply Range | VDDI: 2.5–5.5 V; VDD: 4.2–30 V - allows direct interface with 3.3 V/5 V controllers and flexible gate drive voltages for SiC (12–20 V) or IGBT (15–18 V). |
| Operating Temperature | –40 to +125 °C - qualified for industrial and automotive under-hood applications including OBCs and traction inverters. |
| Jitter | 200 ps p-p - minimizes timing uncertainty in synchronous rectification and phase-shifted full-bridge control schemes. |
Pinout & Package
SI8271GBD-ISR is housed in an 8-pin SOIC package with wide creepage/clearance for reinforced isolation. Pin assignments are validated per Figure 1 and Table 1 of the Skyworks Si827x datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - VI | Digital control input | TTL-compatible signal controlling VO+ (high) and VO– (low); >400 mV hysteresis prevents noise-induced switching. |
| 2 - VDDI | Input-side power supply | Supplies isolator transmitter; 2.5–5.5 V range enables direct connection to MCU I/O rails or LDOs. |
| 3 - GNDI | Input-side ground reference | Reference for VI and VDDI; must be separated from driver-side ground by ≥8 mm creepage for safety compliance. |
| 4 - EN | Enable control | Active-high; forces VO+ and VO– low when deasserted - critical for fault-safe shutdown in overcurrent events. |
| 5 - GND | Driver-side ground | Reference for VO+, VO–, and VDD; connects to power stage source/emitter; galvanically isolated from GNDI. |
| 6 - VO– | Pull-down output | Sinks up to 4 A; used for low-side gate discharge or active Miller clamp; complements VO+ for complementary drive. |
| 7 - VO+ | Pull-up output | Sources up to 4 A; drives gate high in low-side configurations or bootstrap circuits; RDS(ON) = 2.7 Ω (typ). |
| 8 - VDD | Driver-side power supply | Supplies output stage; 4.2–30 V range supports 12 V SiC gate bias or 15 V IGBT gate drive with margin. |
Key Features
| Feature | Design Value |
|---|---|
| RF-based silicon isolation | Enables 2.5 kVRMS withstand and 200 kV/µs CMTI without LED aging or temperature drift - unlike optocouplers. |
| Separate VO+ / VO– outputs | Allows independent optimization of turn-on and turn-off slew rates via external gate resistors - essential for EMI control. |
| Dedicated EN pin | Provides hardware-level fault response with sub-microsecond disable time - required for ISO 26262 ASIL-B system monitoring. |
| AEC-Q100 qualified | Validated for automotive use (Grade 1: –40 to +125 °C); includes PPAP support and IMDS/CAMDS compliance documentation. |
| UVLO on both sides | Independent VDDI and VDD undervoltage detection prevents partial operation - avoids shoot-through during brownout conditions. |
Applications
| Solar Power Inverter | Onboard Charger (OBC) |
|---|---|
|
Use Scenario: Driving high-side and low-side SiC MOSFETs in a 3-phase T-type inverter stage with 1000 V DC link. IC Role / Device Role / Timing Role: Isolated gate driver providing reinforced insulation between MCU control domain and 1000 V power domain; delivers 4 A peak to charge/discharge 100 nC gates at 100 kHz. Use Value: 60 ns propagation delay and 200 ps jitter ensure synchronized switching across phases, minimizing circulating currents and thermal stress. |
Use Scenario: Controlling dual active bridge (DAB) switches in 11 kW bidirectional OBC with 800 V battery interface. IC Role / Device Role / Timing Role: Single-channel isolated driver enabling precise timing control of high-frequency (200–500 kHz) resonant LLC and DAB stages. Use Value: 200 kV/µs CMTI prevents false triggering during rapid bus voltage transitions (dV/dt > 50 V/ns) during mode switching. |
| Motor Control Drive | Industrial UPS System |
|
Use Scenario: Gate driving 1200 V IGBTs in a 30 kW servo drive with field-oriented control (FOC) and active short-circuit protection. IC Role / Device Role / Timing Role: High-current isolated driver delivering 4 A peak to minimize conduction losses while maintaining <100 ns channel-to-channel skew. Use Value: Separate VO+/VO– outputs allow asymmetric gate resistors - optimizing turn-on speed for efficiency and turn-off speed for short-circuit ruggedness. |
Use Scenario: Driving SiC FETs in a 480 VAC online double-conversion UPS with zero-transfer-time switchover and harmonic mitigation. IC Role / Device Role / Timing Role: Isolated gate driver ensuring safe separation between digital control logic and high-voltage inverter stage during mains failure events. Use Value: –40 to +125 °C operation and AEC-Q100 qualification guarantee reliability in uncooled UPS enclosures with ambient temperatures up to 70 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8271BB-D-ISR | Same pinout and electrical specs; differs only in CMTI rating (150 kV/µs vs. 200 kV/µs) and lack of AEC-Q100 qualification. | Not suitable for automotive or high-dV/dt industrial inverters requiring >175 kV/µs immunity. | Select when cost sensitivity outweighs need for maximum noise immunity or automotive certification. |
| UCC5390SCD | TI part with 5 A peak output, 45 ns propagation delay, but lower 100 kV/µs CMTI and no dedicated EN pin - uses SD pin instead. | Lacks independent EN functionality and fails to meet 200 kV/µs requirement for 1500 V SiC systems. | Consider only for non-automotive, lower-voltage (<600 V) applications where tighter propagation delay is prioritized over CMTI. |
Compared with SI8271GBD-ISR, Si8271BB-D-ISR offers identical form/fit/function at lower immunity and qualification level, while UCC5390SCD trades CMTI and EN capability for slightly faster propagation - making SI8271GBD-ISR the optimal choice for automotive-grade, high-dV/dt SiC/GaN systems demanding guaranteed 200 kV/µs immunity and hardware-enable safety.
Availability
SI8271GBD-ISR is available at Aetrix Electronics and suitable for solar inverters, onboard chargers, and motor control drives requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.
Supply support for SI8271GBD-ISR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si827x product line was engineered specifically for high-reliability isolated gate driving in electric vehicle powertrain, renewable energy, and industrial automation systems - emphasizing dV/dt immunity, timing accuracy, and AEC-Q100 compliance.
FAQ
What is the isolation voltage rating of the SI8271GBD-ISR?
The SI8271GBD-ISR is rated for 2.5 kVRMS withstand voltage per UL1577, validated for one minute. This corresponds to reinforced insulation per IEC 62368-1 and VDE 60747-17, supporting designs requiring 1000 VAC working voltage with safety margin. The rating applies to the entire 8-pin SOIC package and is intrinsic to Skyworks' proprietary silicon isolation barrier - not dependent on external layout.
Does the SI8271GBD-ISR support dual-output or high-side/low-side configurations?
No - the SI8271GBD-ISR is strictly a single-channel driver with VO+ (pull-up) and VO– (pull-down) outputs referenced to the same driver-side ground (GND). It does not integrate overlap protection or programmable dead time, unlike Si8273/Si8274 variants. Its function is to replace optocoupler + discrete driver combinations in low-side, high-side (with bootstrap), or half-bridge configurations where external logic manages timing.
What are the UVLO thresholds for the SI8271GBD-ISR input and output supplies?
The SI8271GBD-ISR has independent UVLO monitors: VDDIUV+ = 2.3 V (min), VDDIUV– = 2.1 V (max); VDDUV+ = 3.9 V (min), VDDUV– = 3.7 V (max). When either supply falls below its respective UV– threshold, the corresponding side enters UVLO and forces outputs low. These thresholds are specified in Table 8 of the datasheet and ensure fail-safe behavior during brownout or startup sequencing.
Can the SI8271GBD-ISR drive SiC or GaN FETs directly without external buffers?
Yes - the SI8271GBD-ISR delivers 4 A peak source/sink current with RDS(ON) of 2.7 Ω (VO+) and 1.0 Ω (VO–), enabling direct drive of typical SiC MOSFETs (Qg ≈ 30–80 nC) and GaN HEMTs (Qg ≈ 5–20 nC) at switching frequencies up to 500 kHz. Layout best practices - including short gate traces and local 0.1 µF + 10 µF decoupling - are required to maintain performance.
Is the SI8271GBD-ISR pin-compatible with other Si827x family members?
No - the SI8271GBD-ISR uses an 8-pin SOIC package with unique pinout (VI, VDDI, GNDI, EN, GND, VO–, VO+, VDD). Si8273/Si8274/Si8275 use 16-pin SOIC or LGA-13 packages with different pin counts and functions (e.g., VIA/VIB, DT, VOA/VOB). There is no pin-to-pin compatibility across Si827x variants; board redesign is required when changing configurations.
SI8271GBD-ISR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si827x
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- RF Coupling
- Number of Channels:
- 1
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8271GBD-ISR FAQ
1.How can I place an order for SI8271GBD-ISR through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8271GBD-ISR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8271GBD-ISR reliable?
The price and inventory of SI8271GBD-ISR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8271GBD-ISR is usually 5 days.
3.What payment methods are accepted for SI8271GBD-ISR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8271GBD-ISR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8271GBD-ISR?
SI8271GBD-ISR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8271GBD-ISR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8271GBD-ISR?
For technical support, including SI8271GBD-ISR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8271GBD-ISR requirements.
6.How does Aetrix verify that SI8271GBD-ISR is sourced from the original manufacturer or authorized distributors?
All SI8271GBD-ISR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8271GBD-ISR meets industry standards.
7.What is the process for return or replacement of SI8271GBD-ISR?
All SI8271GBD-ISR units undergo pre-shipment inspection (PSI). If there is an issue with SI8271GBD-ISR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8271GBD-ISR part is unused and in its original packaging.
Return procedure for SI8271GBD-ISR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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