Skyworks Solutions Inc. SI8273ABD-AS1R

Overview

SI8273ABD-AS1R from Skyworks Solutions is a dual-channel isolated gate driver with high-side/low-side configuration, 4 A peak output current per channel, 60 ns max propagation delay, and 200 kV/µs common-mode transient immunity (CMTI). It drives SiC/GaN/MOSFET/IGBT half-bridge power stages in automotive traction inverters and industrial solar inverters.

For engineers reviewing the SI8273ABD-AS1R datasheet, SI8273ABD-AS1R pinout, SI8273ABD-AS1R application, or SI8273ABD-AS1R equivalent, key selection criteria include overlap protection logic, dual independent digital inputs (VIA/VIB), separate VDDA/VDDB supplies, UVLO fault shutdown behavior, and SOIC-16 package compatibility with creepage/clearance requirements for 1500 V DC systems.

Technical Context

The SI8273ABD-AS1R implements two independent RF-modulated isolation channels with semiconductor-based barriers, each supporting up to 2.5 kVRMS withstand voltage per UL1577. Its input side operates at 2.5–5.5 V (TTL-compatible with >400 mV hysteresis), while driver outputs support 4.2–30 V supplies referenced to GNDA and GNDB respectively.

It features hardware-enforced overlap protection to prevent shoot-through during simultaneous high states on VIA and VIB, plus dedicated EN pin that forces both VOA and VOB low within tSD ≤ 100 ns. Each channel includes independent undervoltage lockout (UVLO) monitoring on VDDA and VDDB, with automatic low-state default when either supply falls below threshold.

Key Specifications

Pinout & Package

SI8273ABD-AS1R is housed in a 16-pin SOIC package with wide-body creepage (≥8.0 mm) and reinforced isolation barrier. Pin assignments follow the Si8273 family layout with dedicated input-side (VIA, VIB, VDDI, GNDI, EN) and driver-side (VOA, VDDA, GNDA, VOB, VDDB, GNDB) terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated dual-channel gate driver applications.

Compared with Si8273AD-AS1R, SI8273ABD-AS1R adds automotive qualification without sacrificing performance; versus UCC5390SCD, it delivers higher CMTI and built-in overlap protection-reducing design complexity and improving robustness in high-reliability power systems.

Availability

SI8273ABD-AS1R is available at Aetrix Electronics and suitable for automotive traction inverters, solar power inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SI8273ABD-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for high-performance power systems.

The Si827x product line was designed specifically for isolated gate driving in next-generation power converters using wide-bandgap semiconductors, emphasizing reliability, timing precision, and noise immunity in harsh electrical environments.

FAQ

What is the maximum allowable dV/dt stress on SI8273ABD-AS1R without causing misoperation?

The SI8273ABD-AS1R guarantees correct operation under common-mode transients up to 200 kV/µs, as verified per IEC 61000-4-4 testing. This specification applies across its full operating temperature range (–40 °C to +125 °C) and supply voltages (VDDI = 2.5–5.5 V, VDDA/VDDB = 4.2–30 V). The device uses RF modulation architecture to reject fast edge-induced coupling, making it suitable for 1500 V DC bus applications where dV/dt exceeds 100 kV/µs during switching events. SI8273ABD-AS1R maintains this immunity without external filtering components.

Does SI8273ABD-AS1R support bootstrap high-side drive configurations?

Yes, SI8273ABD-AS1R supports bootstrap high-side drive through its separate GNDA and VDDA pins. When configured as a high-side/low-side pair, VOA connects to the gate of the high-side FET while GNDA serves as its local return path-enabling operation with floating bootstrap supplies up to 30 V. The device's independent UVLO monitoring on VDDA ensures safe shutdown if bootstrap voltage collapses, and its 4 A peak output current drives typical bootstrap gate charges (e.g., 50–100 nC) at 100+ kHz without external buffers. SI8273ABD-AS1R is validated in half-bridge circuits with 1500 V DC bus ratings.

How does the overlap protection function in SI8273ABD-AS1R respond when both VIA and VIB are driven high simultaneously?

When both VIA and VIB are high, SI8273ABD-AS1R forces VOA and VOB into a low state to prevent shoot-through-a hardware-level response independent of software or external logic. This condition is detected internally and resolved within 7 µs of the input transition, after which normal operation resumes. The overlap protection is implemented in the isolation barrier logic and does not rely on propagation delay matching. SI8273ABD-AS1R maintains this behavior across all supply voltages and temperatures, ensuring fail-safe operation in fault scenarios such as controller lockup or signal corruption.

What are the minimum and maximum values for the dead-time resistor if SI8273ABD-AS1R were used with programmable dead time?

SI8273ABD-AS1R does not include a DT (dead-time) pin and therefore does not support programmable dead time. That feature is exclusive to the Si8274 series (e.g., SI8274ABD-AS1R), which has a dedicated DT pin and internal dead-time generator. SI8273ABD-AS1R provides fixed hardware overlap protection instead-eliminating shoot-through risk without requiring external resistors or timing calibration. For designs needing adjustable dead time, SI8273ABD-AS1R must be replaced with a Si8274 variant; the two families are not pin-compatible.

Is SI8273ABD-AS1R compatible with 3.3 V microcontroller logic levels?

Yes, SI8273ABD-AS1R accepts 3.3 V logic inputs on VIA and VIB because its input threshold is TTL-compatible with >400 mV hysteresis and operates over VDDI = 2.5–5.5 V. At VDDI = 3.3 V, the VIH threshold is ~2.0 V and VIL is ~0.8 V, ensuring robust recognition of standard 3.3 V CMOS outputs. No level-shifting circuitry is required. SI8273ABD-AS1R also supports 5 V controllers and maintains full timing specifications (60 ns max propagation, 200 ps jitter) across the entire input supply range-making it interoperable with mixed-voltage control architectures.