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Skyworks Solutions Inc. SI8273DB-AS1R
- Part No.:
- SI8273DB-AS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8273DB-AS1R.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,414
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Product details
Overview
SI8273DB-AS1R from Skyworks Solutions is a dual-channel, high-side/low-side isolated gate driver IC designed for half-bridge MOSFET/IGBT/SiC power stage control. It delivers 4 A peak output current per channel, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns propagation delay, and features built-in overlap protection. It is used in solar inverters, motor drives, and onboard chargers where robust dV/dt immunity and precise timing are critical.
For engineers reviewing the SI8273DB-AS1R datasheet, SI8273DB-AS1R pinout, SI8273DB-AS1R application, or SI8273DB-AS1R equivalent, key selection considerations include its SOIC-16 package with dual independent digital inputs (VIA/VIB), separate driver supplies (VDDA/VDDB), programmable dead-time capability via external resistor (on compatible variants), and AEC-Q100 qualification for automotive-grade reliability.
Technical Context
The SI8273DB-AS1R implements two independent RF-based isolation channels using Skyworks' proprietary silicon isolation barrier, enabling 200 kV/µs common-mode transient immunity (CMTI) and 400 kV/µs latch-up immunity. Each channel includes dedicated UVLO monitoring on both input (VDDI) and output (VDDA/VDDB) sides, ensuring safe operation during supply sequencing.
It operates with TTL-compatible inputs (≥400 mV hysteresis), supports input supply range of 2.5–5.5 V and driver supply range of 4.2–30 V per side, and provides separate pull-up/pull-down outputs (VOA/VOB) for slew-rate control and gate drive flexibility in high-frequency switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 VAC systems and meets basic insulation requirements per IEC 62368-1, VDE 60747-17. |
| Peak Output Current | 4.0 A per channel - sufficient to directly drive high-gate-charge SiC FETs and IGBTs without external buffers in <100 kHz applications. |
| Propagation Delay | ≤60 ns max - ensures tight timing alignment between high-side and low-side gate signals, reducing shoot-through risk in half-bridge configurations. |
| CMTI | 200 kV/µs min - maintains signal integrity in noisy high-dV/dt environments such as motor drives and traction inverters. |
| Supply Range (Input) | 2.5–5.5 V - compatible with 3.3 V and 5 V microcontrollers and FPGA I/O without level-shifting. |
| Supply Range (Driver) | 4.2–30 V per side - supports wide-range gate biasing for MOSFETs (10–15 V), IGBTs (15–20 V), and SiC FETs (12–20 V). |
| Operating Temperature | –40 °C to +125 °C - qualified for industrial and automotive under-hood environments without derating. |
| AEC-Q100 Grade | Qualified - meets stress test requirements for automotive electronics, including temperature cycling, HTOL, and ESD (HBM 3.5 kV). |
Pinout & Package
SI8273DB-AS1R is housed in a 16-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments follow the Si8273 family layout, with dedicated input-side (VIA, VIB, VDDI, GNDI, EN) and driver-side (VOA, VOB, VDDA, GNDA, VDDB, GNDB) terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | VIA / VIB | Independent TTL-compatible logic inputs controlling high-side (VOA) and low-side (VOB) outputs respectively. |
| 3, 8 | VDDI | Input-side power supply (2.5–5.5 V); powers isolation transmitter and input logic. |
| 4 | GNDI | Input-side reference ground; must be isolated from driver-side grounds. |
| 5 | EN | Active-high enable pin; forces both outputs low when deasserted, supporting safe shutdown sequences. |
| 9, 11 | GNDB / VDDB | Low-side driver ground and supply (4.2–30 V); referenced to Q2 source in half-bridge. |
| 10 | VOB | Low-side gate drive output; actively pulls gate low (1.0 Ω ROL) and high (2.7 Ω ROH). |
| 14, 16 | GNDA / VDDA | High-side driver ground and supply (4.2–30 V); typically bootstrapped in half-bridge configurations. |
| 15 | VOA | High-side gate drive output; same drive strength as VOB, supports bootstrap or isolated supply topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent digital inputs (VIA/VIB) | Enables asymmetric PWM control, phase-shifted operation, and independent fault handling per channel. |
| Built-in overlap protection | Prevents simultaneous conduction in high-side/low-side pairs by forcing one output low during input contention (VIA = VIB = high). |
| Separate pull-up/pull-down outputs | Allows independent optimization of turn-on and turn-off slew rates via external gate resistors on VOA/VOB. |
| UVLO on all supplies (VDDI, VDDA, VDDB) | Guarantees safe default-low output state if any supply drops below threshold, eliminating shoot-through during brownout. |
| 200 ps p-p jitter | Minimizes timing uncertainty across temperature and voltage, critical for multi-phase interleaved converters requiring sub-100 ns synchronization. |
Applications
| Solar Power Inverter | Automotive Onboard Charger (OBC) |
|---|---|
|
Use Scenario: Driving high-voltage half-bridge SiC modules in DC–AC conversion stages with >100 kHz switching frequency. IC Role / Device Role / Timing Role: Isolated gate driver providing independent, synchronized control of high-side and low-side switches with overlap protection and fast propagation. Use Value: Enables >98% system efficiency by minimizing dead-time losses while preventing shoot-through under fast dV/dt transients (>100 kV/µs) from transformer leakage. |
Use Scenario: Controlling bidirectional AC–DC and DC–DC power stages in 11 kW OBCs with thermal constraints in engine bay mounting. IC Role / Device Role / Timing Role: AEC-Q100-qualified isolated driver delivering 4 A peak current to SiC MOSFET gates at –40 °C to +125 °C ambient. Use Value: Eliminates optocoupler aging and CMTI limitations, sustaining reliable gate drive over 15-year vehicle lifetime under repeated thermal cycling. |
| Industrial Motor Drive | Uninterruptible Power Supply (UPS) |
|
Use Scenario: Gate driving 650 V IGBTs in three-phase VFDs operating in dusty, high-humidity factory environments. IC Role / Device Role / Timing Role: High-noise-immunity isolated driver with separate VDDA/VDDB supplies enabling floating high-side operation in bootstrapped topologies. Use Value: Maintains clean switching edges despite 200 kV/µs transients induced by long motor cables, reducing EMI filter size and cost. |
Use Scenario: Driving parallel MOSFETs in high-current battery charging and inverter legs of 3-phase online UPS systems. IC Role / Device Role / Timing Role: Dual-channel isolated driver with matched propagation delay (<5 ns skew) ensuring balanced current sharing across paralleled devices. Use Value: Prevents current imbalance and thermal runaway during 10 ms overload events by maintaining precise gate timing across all phases. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8273BB-AS1R | Same pinout and specs, but rated for –55 °C to +125 °C (ZS suffix) and includes deglitch circuit (15 ns added propagation delay). | Required for extended-temperature automotive or military applications where noise immunity outweighs minimal timing penalty. | Select Si8273BB-AS1R only if system-level EMC testing confirms need for 15 ns deglitching; otherwise SI8273DB-AS1R offers optimal timing performance. |
| UCC5390SCD | TI part with 4 A output, 3.75 kVRMS isolation, but uses capacitive isolation and lacks built-in overlap protection; requires external logic for shoot-through prevention. | Suitable for cost-sensitive industrial designs where external dead-time control is already implemented in MCU firmware. | Choose UCC5390SCD only when leveraging existing MCU-based dead-time generation; SI8273DB-AS1R reduces firmware complexity and improves fault resilience. |
Compared with Si8273BB-AS1R, SI8273DB-AS1R trades extended temperature range and deglitching for lower propagation delay and simpler timing design; versus UCC5390SCD, it delivers integrated overlap protection and higher CMTI without external components-reducing BOM count and improving system-level reliability in high-noise power stages.
Availability
SI8273DB-AS1R is available at Aetrix Electronics and suitable for solar inverters, automotive onboard chargers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.
Supply support for SI8273DB-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies for high-reliability applications.
The Si827x product line was engineered specifically for isolated gate driving in high-efficiency power conversion systems, combining silicon-based isolation with precision timing, robust noise immunity, and automotive-grade reliability.
FAQ
What is the maximum recommended switching frequency for SI8273DB-AS1R in a half-bridge configuration?
The SI8273DB-AS1R supports switching frequencies up to 2 MHz in optimized layouts, but practical limits depend on gate charge, external RG, and supply stability. At 100 kHz with 100 nC SiC FETs and 10 Ω gate resistors, typical rise/fall times are <25 ns. For >500 kHz operation, ensure VDDA/VDDB decoupling uses ≥10 µF low-ESR tantalum + 0.1 µF ceramic placed within 2 mm of pins 14/16 and 9/11. SI8273DB-AS1R's 60 ns max propagation delay and 200 ps jitter make it suitable for multi-phase interleaved designs requiring tight timing alignment.
Does SI8273DB-AS1R require external dead-time programming resistors like the Si8274 series?
No, SI8273DB-AS1R does not require an external dead-time resistor. Unlike the Si8274 (PWM-input variant), the SI8273DB-AS1R uses dual independent inputs (VIA/VIB) and implements hardware-based overlap protection that automatically prevents simultaneous high states. This eliminates shoot-through risk without external components or timing calibration. SI8273DB-AS1R's truth table (Table 5) confirms that when VIA = VIB = high, both VOA and VOB go low-ensuring fail-safe behavior without dead-time programming.
Can SI8273DB-AS1R drive both high-side and low-side switches using the same ground reference?
Yes, SI8273DB-AS1R supports single-ground operation: VOA and VOB can both reference the same GNDA/GNDB net when used in low-side-only or dual low-side configurations. However, for half-bridge use, GNDA must float relative to GNDB (e.g., via bootstrap capacitor), as VDDA and VDDB are electrically isolated supplies. The device's architecture allows VOA and VOB to operate with up to 1500 V dc potential difference between their respective grounds-verified in Figure 24 and Section 3.1.2. SI8273DB-AS1R's isolation barrier ensures no current flows between input and driver sides, regardless of ground topology.
What safety certifications apply to SI8273DB-AS1R, and what insulation level do they represent?
SI8273DB-AS1R is UL 1577 recognized (2500 VRMS for 1 minute), CSA certified to IEC 62368-1 (basic insulation), VDE certified to IEC 60747-17 (basic insulation), and CQC approved to GB4943.1 (basic insulation). These approvals confirm 2.5 kVRMS withstand voltage across the isolation barrier, qualifying it for reinforced insulation in functional safety applications up to 1000 VAC mains-connected equipment. All certifications are documented in the official Skyworks Certificate of Conformance for SI8273DB-AS1R, with test reports available upon request.
How does the enable (EN) pin behave during undervoltage lockout (UVLO) on the input supply (VDDI)?
When VDDI falls below its UVLO threshold (VDDIUV– ≈ 2.1 V), the SI8273DB-AS1R enters input-side UVLO and forces both VOA and VOB low-regardless of EN pin state. The EN pin has no effect during VDDI UVLO; only restoration of VDDI above VDDIUV+ (≈2.3 V) re-enables normal operation after tSTART (~10 µs). This behavior is specified in Section 2.5.4 and ensures fail-safe shutdown during controller power loss. SI8273DB-AS1R's EN pin functions only when VDDI is stable and within specification, making it ideal for coordinated system-level reset sequences.
SI8273DB-AS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- SI827x
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- RF Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8273DB-AS1R FAQ
1.How can I place an order for SI8273DB-AS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8273DB-AS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8273DB-AS1R reliable?
The price and inventory of SI8273DB-AS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8273DB-AS1R is usually 5 days.
3.What payment methods are accepted for SI8273DB-AS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8273DB-AS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8273DB-AS1R?
SI8273DB-AS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8273DB-AS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8273DB-AS1R?
For technical support, including SI8273DB-AS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8273DB-AS1R requirements.
6.How does Aetrix verify that SI8273DB-AS1R is sourced from the original manufacturer or authorized distributors?
All SI8273DB-AS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8273DB-AS1R meets industry standards.
7.What is the process for return or replacement of SI8273DB-AS1R?
All SI8273DB-AS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8273DB-AS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8273DB-AS1R part is unused and in its original packaging.
Return procedure for SI8273DB-AS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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