My Inquiry
My Account
Skyworks Solutions Inc. SI8273GB-AS1R
- Part No.:
- SI8273GB-AS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8273GB-AS1R.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,635
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI8273GB-AS1R from Skyworks Solutions is a dual-channel, high-side/low-side isolated gate driver IC designed for half-bridge power stage control in high-voltage switching systems. It delivers 4 A peak output current per channel, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns propagation delay, and features built-in overlap protection - enabling robust SiC and GaN FET drive in solar inverters and traction inverters.
For engineers reviewing the SI8273GB-AS1R datasheet, SI8273GB-AS1R pinout, SI8273GB-AS1R application, or SI8273GB-AS1R equivalent, key selection criteria include its dual independent digital inputs (VIA/VIB), separate pull-up/pull-down outputs for slew rate tuning, 200 kV/µs CMTI immunity, and AEC-Q100 qualification for automotive-grade reliability in high-dV/dt environments.
Technical Context
The SI8273GB-AS1R implements two independent RF-modulated isolation channels with semiconductor-based barriers, each driving a dedicated high-side/low-side pair (VOA/GNDA and VOB/GNDB). Its logic-side input supply (VDDI: 2.5–5.5 V) is galvanically separated from dual driver supplies (VDDA/VDDB: 4.2–30 V), supporting asymmetric rail configurations and ground-referenced or floating output stages.
It integrates per-channel undervoltage lockout (UVLO) monitoring on both input and output sides, programmable dead-time-free overlap protection triggered by simultaneous high inputs (VIA = VIB = H), and an active-low EN pin that forces both outputs low within tSD. Startup behavior holds outputs low until all supplies exceed UVLO thresholds and tSTART elapses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 V DC bus systems |
| Peak Output Current | 4.0 A per channel - sufficient to directly drive 1000 V SiC MOSFETs with <10 nC gate charge |
| Propagation Delay | ≤60 ns max - ensures tight timing control in >100 kHz PWM applications |
| CMTI Immunity | 200 kV/µs - prevents false triggering during fast dV/dt transients in motor drives |
| Supply Range (Input) | 2.5–5.5 V - compatible with 3.3 V and 5 V microcontrollers without level shifting |
| Supply Range (Driver) | 4.2–30 V per side - supports 12 V, 15 V, and 24 V gate drive rails independently |
| Operating Temperature | –40 °C to +125 °C - qualified for under-hood automotive and industrial ambient conditions |
| Timing Jitter | 200 ps p-p - minimizes phase error in synchronized multi-phase inverter topologies |
Pinout & Package
SI8273GB-AS1R is housed in a 16-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments follow the Si8273 family layout with dedicated input, enable, and dual-output power domains.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | VIA, VIB | Independent TTL-compatible logic inputs - control VOA and VOB separately for flexible half-bridge sequencing |
| 3, 8 | VDDI | Input-side power supply - powers isolation transmitter and logic interface at 2.5–5.5 V |
| 4 | GNDI | Input-side reference ground - must be isolated from driver-side grounds |
| 5 | EN | Active-low enable - forces VOA/VOB low regardless of inputs when asserted |
| 6, 7, 12, 13 | NC | No-connect pins - left unconnected per datasheet; no internal function |
| 9, 11 | GNDB, VDDB | Low-side driver ground and supply - forms isolated power domain for VOB output stage |
| 10 | VOB | Low-side gate drive output - sinks/source up to 4 A with ROL = 1.0 Ω |
| 14 | GNDA | High-side driver ground - referenced to source of high-side FET; requires bootstrap or isolated supply |
| 15 | VOA | High-side gate drive output - sources up to 4 A with ROH = 2.7 Ω; supports floating operation |
| 16 | VDDA | High-side driver supply - powers VOA stage; typically tied to bootstrap capacitor voltage |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent digital inputs | Enables asymmetric PWM control and custom dead-time insertion via external logic |
| Separate pull-up/pull-down outputs | Allows independent optimization of turn-on/turn-off slew rates to reduce EMI and voltage overshoot |
| Overlap protection | Hardware-level prevention of shoot-through during VIA=VIB=H condition - no firmware dependency |
| AEC-Q100 qualified | Validated for automotive use including temperature cycling, HTOL, and ESD (HBM 3.5 kV, CDM 2 kV) |
| 200 kV/µs CMTI | Ensures reliable operation in high-noise motor drives and inverters with >10 kV/µs common-mode transients |
| Wide driver supply range | Supports 4.2–30 V per output side - accommodates 12 V gate drivers for IGBTs and 15–20 V for SiC/GaN FETs |
Applications
| Solar Power Inverter | Traction Inverter |
|---|---|
Use Scenario: Driving high-voltage half-bridge SiC modules in string inverters with 1500 V DC bus. IC Role / Device Role / Timing Role: Isolated gate driver providing independent control of high-side and low-side switches with precise timing and shoot-through protection. Use Value: 4 A peak drive current and 60 ns propagation delay enable >50 kHz switching with minimal dead-time penalty and reduced conduction loss. |
Use Scenario: Controlling dual half-bridges in electric vehicle traction inverters operating at 800 V battery systems. IC Role / Device Role / Timing Role: AEC-Q100 qualified isolated driver delivering robust gate control under high dV/dt and thermal stress. Use Value: 200 kV/µs CMTI and –40 °C to +125 °C operation ensure reliable gate drive during rapid torque transients and under-hood thermal cycling. |
| Onboard Charger (OBC) | Battery Management System (BMS) |
Use Scenario: Bidirectional AC/DC and DC/DC conversion in automotive OBCs using interleaved totem-pole PFC and CLLC resonant stages. IC Role / Device Role / Timing Role: Dual-channel isolated driver managing synchronous rectification and high-frequency switching with overlap protection. Use Value: Separate VDDA/VDDB supplies allow independent biasing of primary and secondary side gates, improving efficiency in bidirectional topologies. |
Use Scenario: Isolating gate signals between MCU and high-side precharge/discharge FETs in high-voltage battery packs (up to 900 V). IC Role / Device Role / Timing Role: Reinforced-isolation driver enabling safe, fast switching of contactor control FETs with fault-safe shutdown. Use Value: EN pin integration allows centralized hardware disable of all gate outputs during overvoltage or thermal faults - critical for ASIL-B compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated dual gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8273BB-AS1R | Same pinout and specs, but rated for –40 °C to +105 °C (not AEC-Q100 qualified) | Suitable for industrial SMPS and UPS where automotive qualification is unnecessary | Select SI8273GB-AS1R for automotive systems requiring AEC-Q100; choose Si8273BB-AS1R for cost-sensitive industrial designs |
| ADUM4223BRIZ | 2.5 kVRMS isolation, 4 A peak, but only 35 ns propagation delay and no overlap protection logic | Requires external logic for shoot-through prevention; better suited for ultra-low-latency servo drives | Choose SI8273GB-AS1R when hardware-enforced overlap protection and automotive qualification are mandatory |
Compared with Si8273BB-AS1R, SI8273GB-AS1R adds AEC-Q100 qualification and extended temperature support, while versus ADUM4223BRIZ it trades marginal propagation delay for integrated shoot-through protection and higher CMTI - making it optimal for safety-critical automotive inverters.
Availability
SI8273GB-AS1R is available at Aetrix Electronics and suitable for solar inverters, traction inverters, onboard chargers, and battery management systems requiring stable component supply across automotive and industrial design cycles.
Supply support for SI8273GB-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global leader in analog and mixed-signal semiconductors, specializing in RF, isolation, and precision timing technologies for high-performance wireless and power systems.
The Si827x product line was engineered specifically for high-reliability isolated gate driving in next-generation power converters using wide-bandgap FETs - emphasizing noise immunity, timing accuracy, and automotive-grade robustness.
FAQ
What is the isolation rating and certification status of the SI8273GB-AS1R?
The SI8273GB-AS1R provides 2.5 kVRMS isolation per UL1577, with certifications including UL recognition, CSA 62368-1 (basic insulation), VDE 60747-17, and CQC GB4943.1. It meets reinforced insulation requirements for functional safety in systems up to 1000 V DC bus voltage. All certifications apply directly to the SI8273GB-AS1R device as shipped, not just the Si827x family.
Does the SI8273GB-AS1R support independent high-side and low-side gate drive voltages?
Yes, the SI8273GB-AS1R supports fully independent driver supplies: VDDA/GNDA for the high-side output (VOA) and VDDB/GNDB for the low-side output (VOB), each adjustable from 4.2 V to 30 V. This enables optimized gate biasing - such as 18 V for SiC turn-on and 12 V for IGBT saturation - without shared supply constraints. The SI8273GB-AS1R datasheet confirms separate UVLO monitoring per supply rail.
How does overlap protection work in the SI8273GB-AS1R, and is it configurable?
The SI8273GB-AS1R implements hardware-based overlap protection that automatically forces both VOA and VOB low when VIA and VIB are simultaneously high - preventing shoot-through without software intervention. This behavior is fixed and non-configurable, as defined in Table 5 of the SI8273GB-AS1R datasheet. Recovery occurs within 7 µs after one input returns low.
What is the maximum recommended switching frequency when using the SI8273GB-AS1R?
The SI8273GB-AS1R supports switching frequencies up to 2 MHz in practical designs, limited primarily by external gate resistor selection and FET gate charge rather than driver bandwidth. Its 60 ns max propagation delay and 200 ps p-p jitter enable clean operation at 500 kHz–1 MHz in SiC-based inverters. The SI8273GB-AS1R electrical characteristics table specifies timing parameters valid across the full –40 °C to +125 °C range.
Is the SI8273GB-AS1R pin-compatible with other Si827x variants like the Si8274 or Si8275?
No, the SI8273GB-AS1R is not pin-compatible with Si8274 (PWM-input) or Si8275 (dual independent driver) variants. While all share the 16-pin SOIC package, pin functions differ significantly - e.g., Si8274 uses Pin 1 for PWM and Pins 2/7/12/13 as NC, whereas SI8273GB-AS1R assigns Pins 1/2 to VIA/VIB and Pins 6/7/12/13 as NC. Direct substitution would cause functional failure without PCB redesign.
SI8273GB-AS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- SI827x
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- RF Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8273GB-AS1R FAQ
1.How can I place an order for SI8273GB-AS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8273GB-AS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8273GB-AS1R reliable?
The price and inventory of SI8273GB-AS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8273GB-AS1R is usually 5 days.
3.What payment methods are accepted for SI8273GB-AS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8273GB-AS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8273GB-AS1R?
SI8273GB-AS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8273GB-AS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8273GB-AS1R?
For technical support, including SI8273GB-AS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8273GB-AS1R requirements.
6.How does Aetrix verify that SI8273GB-AS1R is sourced from the original manufacturer or authorized distributors?
All SI8273GB-AS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8273GB-AS1R meets industry standards.
7.What is the process for return or replacement of SI8273GB-AS1R?
All SI8273GB-AS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8273GB-AS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8273GB-AS1R part is unused and in its original packaging.
Return procedure for SI8273GB-AS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI8273GB-AS1R Tags
.JPG)
-
TLP152(TPL,E
Toshiba Semiconductor and Storage
-
HT0740LG-G
Microchip Technology
-
FOD8314TR2
onsemi
-
1EDI60N12AFXUMA1
Infineon Technologies
-
1EDB7275FXUMA1
Infineon Technologies
-
UCC5350MCDR
Texas Instruments
-
2EDB7259KXUMA1
Infineon Technologies
-
UCC5304DWVR
Texas Instruments
-
SI8261BBC-C-ISR
Skyworks Solutions Inc.
-
HT0440LG-G
Microchip Technology
-
HCPL-0302-500E
Broadcom Limited
-
STGAP2HSCMTR
STMicroelectronics
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
