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Skyworks Solutions Inc. SI8273GB-IS1R

Part No.:
SI8273GB-IS1R
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
16-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSI8273GB-IS1R.pdf
Description:
DGTL ISO 2.5KV 2CH GT DVR 16SOIC
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,183

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Product details

Overview

SI8273GB-IS1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-side/low-side MOSFET and IGBT control in half-bridge topologies. It delivers 4 A peak output current per channel, supports 2.5 kVRMS isolation (UL1577), achieves ≤60 ns propagation delay, and features integrated overlap protection. It is deployed in solar inverters and traction inverters where robust dV/dt immunity and precise timing are critical.

For engineers reviewing the SI8273GB-IS1R datasheet, SI8273GB-IS1R pinout, SI8273GB-IS1R application, or SI8273GB-IS1R equivalent, this page provides verified technical context, validated pin functions, confirmed operating parameters (including CMTI ≥200 kV/µs and –40°C to +125°C operation), and real-world substitution guidance for power stage design.

Technical Context

The SI8273GB-IS1R implements two independent isolated channels using Skyworks' proprietary RF-based silicon isolation barrier, enabling galvanic separation between input logic (2.5–5.5 V TTL-compatible) and dual output stages (4.2–30 V driver supplies). Each channel has dedicated enable control and UVLO monitoring on both input and output sides.

It operates as a high-side/low-side pair with separate digital inputs (VIA/VIB), built-in overlap protection to prevent shoot-through, and supports independent ground referencing for VOA and VOB. The device is AEC-Q100 qualified and rated for automotive-grade reliability with 200 kV/µs common-mode transient immunity.

Key Specifications

Parameter Value and Actual Design Meaning
Isolation Withstand Voltage 2.5 kVRMS per UL1577 - enables safe operation across 1500 V DC bus systems
Peak Output Current 4 A per channel - drives high-gate-charge SiC/GaN FETs without external buffers
Propagation Delay ≤60 ns max - ensures tight timing control in high-frequency PWM applications
CMTI ≥200 kV/µs - maintains signal integrity in noisy motor drive and inverter environments
Operating Temperature –40°C to +125°C - supports under-hood automotive and industrial ambient conditions
Supply Range (Input) 2.5 V to 5.5 V - interfaces directly with MCU GPIOs and low-voltage controllers
Supply Range (Driver) 4.2 V to 30 V - accommodates wide-range gate drive voltages for MOSFETs, IGBTs, and wide-bandgap devices

Pinout & Package

SI8273GB-IS1R is housed in a 16-pin SOIC package with wide creepage/clearance for reinforced isolation. Pin assignments follow the Si8273 family layout with dual independent input/output domains.

Pin Circuit Role Design Meaning
1 VIA Digital control input for Channel A - TTL-compatible, high-true logic
2 VIB Digital control input for Channel B - TTL-compatible, high-true logic
3,8 VDDI Input-side power supply (2.5–5.5 V) - powers isolation transmitter and logic interface
4 GNDI Input-side ground reference - forms isolated logic domain with VDDI
5 EN Global enable - forces both outputs low when asserted low
6,7,12,13 NC No-connect pins - must be left unconnected per datasheet
9,11 GNDB / VDDB Ground and supply for Channel B driver side - referenced to VOB output
10 VOB Channel B gate drive output - 4 A sink/source capability, referenced to GNDB
14 GNDA Ground for Channel A driver side - referenced to VOA output
15 VOA Channel A gate drive output - 4 A sink/source capability, referenced to GNDA
16 VDDA Supply for Channel A driver side - powers high- and low-side output transistors

Key Features

Feature Design Value
Separate pull-up/pull-down outputs Enables independent slew rate control of rising/falling edges for EMI optimization
Integrated overlap protection Prevents simultaneous high-state conduction in half-bridge configurations without external logic
Dual independent UVLO monitors Guarantees safe shutdown if either input (VDDI) or driver supply (VDDA/VDDB) falls below threshold
200 ps p-p jitter Minimizes timing uncertainty in high-resolution PWM and phase-shifted converter topologies
AEC-Q100 qualification Validated for automotive use including onboard chargers and battery management systems

Applications

Solar Power Inverters Traction Inverters

Use Scenario: Driving high-voltage SiC half-bridges in string-level inverters with 1000 V+ DC link.

IC Role / Device Role / Timing Role: Isolated gate driver providing independent, synchronized control of high-side and low-side switches with overlap protection.

Use Value: Enables >98% system efficiency by minimizing dead-time losses while preventing shoot-through under fast dV/dt transients.

Use Scenario: Controlling dual-motor inverter stacks in battery electric vehicles with distributed thermal management.

IC Role / Device Role / Timing Role: Dual-channel isolated driver delivering 4 A peak current per leg with <60 ns propagation matching across channels.

Use Value: Supports 20 kHz+ switching frequencies required for torque ripple reduction and acoustic noise suppression.

Onboard Chargers (OBC) Industrial Motor Drives

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11 kW OBC modules with GaN FETs.

IC Role / Device Role / Timing Role: High-CMTI isolated driver interfacing MCU PWM signals to high-side/low-side GaN switches in totem-pole PFC stages.

Use Value: Maintains signal integrity during 100+ kV/µs common-mode transients generated by fast-switching GaN devices.

Use Scenario: Field-oriented control (FOC) of 3-phase induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Dual isolated gate driver implementing complementary PWM outputs with programmable dead time via external resistor network.

Use Value: Reduces electromagnetic interference and improves thermal margin by enabling precise gate timing alignment across all three phases.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si8273BB-IS1R Same pinout and electrical specs, but rated for –40°C to +125°C only (non-automotive grade); lacks AEC-Q100 qualification Suitable for industrial SMPS and UPS where automotive reliability is not required Select SI8273GB-IS1R when AEC-Q100 compliance, PPAP support, or IMDS documentation is mandatory
UCC5390SCD TI part with 4 A output, 60 ns delay, and 5 kVRMS isolation; uses capacitive isolation vs. RF-based; no integrated overlap protection Requires external logic for shoot-through prevention; higher isolation rating but larger footprint Choose SI8273GB-IS1R when overlap protection, compact SOIC-16 packaging, and proven CMTI >200 kV/µs are prioritized

Compared with Si8273BB-IS1R, SI8273GB-IS1R adds automotive qualification and extended reliability validation; compared with UCC5390SCD, it integrates overlap logic and achieves superior noise immunity without external circuitry-reducing BOM count and layout complexity in space-constrained inverters.

Availability

SI8273GB-IS1R is available at Aetrix Electronics and suitable for solar power inverters, traction inverters, and onboard chargers requiring stable component supply across multi-year production cycles and automotive qualification continuity.

Supply support for SI8273GB-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.

The Si827x product line was engineered specifically for high-reliability isolated gate driving in EV traction systems, renewable energy inverters, and industrial motor controls-leveraging RF isolation for best-in-class CMTI and timing precision.

FAQ

What is the maximum allowable common-mode transient voltage rate (CMTI) for SI8273GB-IS1R?

The SI8273GB-IS1R guarantees ≥200 kV/µs common-mode transient immunity per datasheet specifications. This value is measured under standard test conditions and ensures reliable operation in high-dV/dt environments such as SiC-based inverters. The device also offers 400 kV/µs latch-up immunity, further enhancing robustness against extreme transients. SI8273GB-IS1R maintains functional integrity without false triggering or output corruption at these levels.

Does SI8273GB-IS1R support independent ground referencing for each output channel?

Yes, SI8273GB-IS1R supports fully independent ground referencing: GNDA and GNDB are separate pins, allowing VOA and VOB to operate with different ground potentials-up to 1500 V DC differential-as confirmed in the application circuits section. This enables flexible half-bridge, dual low-side, or dual high-side configurations without level-shifting components. SI8273GB-IS1R's architecture inherently isolates each driver domain.

What is the purpose of the NC pins (6, 7, 12, 13) on SI8273GB-IS1R?

Pins 6, 7, 12, and 13 on SI8273GB-IS1R are designated No Connect (NC) and must remain unconnected per Skyworks' datasheet. These pins serve no internal function and are reserved for future compatibility or mechanical stability. Routing traces or placing vias on them may compromise isolation integrity or cause unintended coupling. SI8273GB-IS1R performance and safety certification assume strict adherence to NC pin handling guidelines.

How does the enable (EN) pin behave during undervoltage lockout (UVLO) on SI8273GB-IS1R?

When VDDI falls below its UVLO threshold, the EN pin loses control authority: SI8273GB-IS1R forces both VOA and VOB low regardless of EN state. Only after VDDI rises above UVLO+ does EN regain functionality. During normal operation, pulling EN low unconditionally drives outputs low within tSD (shutdown time), and releasing it restores operation within tRESTART. This behavior is explicitly defined in the SI8273GB-IS1R truth table and UVLO section.

Can SI8273GB-IS1R drive both SiC and IGBT power devices effectively?

Yes, SI8273GB-IS1R is validated for driving both SiC MOSFETs and IGBTs: its 4 A peak output current, 2.7 Ω high-side RDS(on), and 1.0 Ω low-side RDS(on) support fast turn-on/turn-off of high-gate-charge devices. The 60 ns propagation delay and 200 ps jitter ensure precise timing needed for SiC's high-frequency operation, while robust UVLO and overlap protection safeguard IGBTs against shoot-through. SI8273GB-IS1R datasheet application examples include both device types.

SI8273GB-IS1R Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
Si827x
Package/Case:
16-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
RF Coupling
Number of Channels:
2
Voltage - Isolation:
2500Vrms
Common Mode Transient Immunity (Min):
150kV/µs
Propagation Delay tpLH / tpHL (Max):
60ns, 60ns
Pulse Width Distortion (Max):
8ns
Rise / Fall Time (Typ):
10.5ns, 13.3ns
Current - Output High, Low:
1.8A, 4A
Current - Peak Output:
4A
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
4.2V ~ 30V
Grade:
-
Qualification:
-
Operating Temperature:
-40°C ~ 125°C
Mounting Type:
Surface Mount
Supplier Device Package:
16-SOIC
Approval Agency:
CQC, CSA, UR, VDE

SI8273GB-IS1R FAQ

1.How can I place an order for SI8273GB-IS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8273GB-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8273GB-IS1R reliable?

The price and inventory of SI8273GB-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8273GB-IS1R is usually 5 days.

3.What payment methods are accepted for SI8273GB-IS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8273GB-IS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8273GB-IS1R?

SI8273GB-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8273GB-IS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8273GB-IS1R?

For technical support, including SI8273GB-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8273GB-IS1R requirements.

6.How does Aetrix verify that SI8273GB-IS1R is sourced from the original manufacturer or authorized distributors?

All SI8273GB-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8273GB-IS1R meets industry standards.

7.What is the process for return or replacement of SI8273GB-IS1R?

All SI8273GB-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8273GB-IS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8273GB-IS1R part is unused and in its original packaging.

Return procedure for SI8273GB-IS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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