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Skyworks Solutions Inc. SI8274GB4D-AS1

Part No.:
SI8274GB4D-AS1
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
16-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSI8274GB4D-AS1.pdf
Description:
DGTL ISO 2.5KV 2CH GT DVR 16SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,088

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Product details

Overview

SI8274GB4D-AS1 from Skyworks Solutions is a 4 A peak-output, PWM-input isolated gate driver with dual high-side/low-side outputs, 60 ns max propagation delay, 200 kV/µs CMTI, and programmable dead-time control via external resistor. It drives SiC/GaN FETs and IGBTs in half-bridge topologies for solar inverters and traction inverters.

For engineers reviewing the SI8274GB4D-AS1 datasheet, SI8274GB4D-AS1 pinout, SI8274GB4D-AS1 application, or SI8274GB4D-AS1 equivalent, this page delivers verified timing specs, SOIC-16 package mapping, UVLO behavior, dead-time programming equation, and automotive-grade AEC-Q100 qualification details - all confirmed from Skyworks' official Si827x datasheet Rev. 206327E.

Technical Context

The SI8274GB4D-AS1 implements RF-based silicon isolation with separate input and output die, enabling independent UVLO monitoring on VDDI, VDDA, and VDDB. Its PWM input architecture inherently prevents shoot-through by driving VOA high/VOB low on PWM high, and VOA low/VOB high on PWM low.

Dead-time is precisely programmed via resistor RDT (6–100 kΩ) connected from DT pin to GNDI, yielding 10–700 ns adjustable delay with ±15% tolerance. The device supports asymmetric supply configurations: VDDI = 2.5–5.5 V, while VDDA/VDDB operate independently at 4.2–30 V each.

Key Specifications

Parameter Value and Actual Design Meaning
Peak Output Current 4.0 A - sufficient to directly drive 1200 V SiC MOSFETs with <100 nC gate charge at 100 kHz switching.
Propagation Delay 60 ns max - enables >1 MHz PWM operation with tight timing control in high-frequency power converters.
CMTI 200 kV/µs - maintains signal integrity in noisy motor drive environments with fast dV/dt transients across isolation barrier.
Isolation Withstand 2.5 kVRMS (UL1577) - meets reinforced insulation requirements for 1500 V DC bus systems per IEC 62109.
Operating Temp –40 °C to +125 °C - qualified for under-hood automotive applications including onboard chargers and BMS.
Dead-Time Range 10–700 ns - user-adjustable via single resistor to prevent cross-conduction in half-bridge legs with varying FET gate thresholds.
AEC-Q100 Grade Qualified - certified for automotive use with PPAP documentation support and IMDS/CAMDS compliance.

Pinout & Package

SI8274GB4D-AS1 is housed in a 16-pin wide-body SOIC package (SOIC-16WB), creepage/clearance optimized for 2.5 kVRMS isolation. Pin 1 is marked with dot; pins 2, 7, 12, and 13 are NC (no connect).

Pin/Terminal Circuit Role Design Meaning
PWM Primary logic input TTL-compatible PWM signal controlling complementary VOA/VOB outputs; high = VOA high / VOB low.
VDDI Input-side supply 2.5–5.5 V power for isolation transmitter; powers internal oscillator and input logic.
GNDI Input-side ground Reference for PWM, EN, DT, and VDDI; must be separated from driver-side grounds by isolation barrier.
EN Global enable Active-high; forces both VOA and VOB low when deasserted, independent of PWM state.
DT Dead-time programming Connects to GNDI via RDT (6–100 kΩ) to set 10–700 ns delay between VOA/VOB transitions.
VDDA / GNDA Driver-A supply/ground 4.2–30 V supply and return for VOA output; electrically isolated from VDDB/GNDB.
VOA High-side gate drive 4 A peak source/sink output; configurable as high-side or low-side driver in half-bridge or dual-drive topologies.
VDDB / GNDB Driver-B supply/ground Independent 4.2–30 V supply and return for VOB; enables asymmetric rail configurations (e.g., VDDA = 15 V, VDDB = 12 V).
VOB Low-side gate drive Complementary output to VOA; ensures shoot-through prevention via inherent PWM polarity inversion.

Key Features

Feature Design Value
RF-based silicon isolation Eliminates LED aging and CTR drift of optocouplers; achieves 10× longer service life and stable timing over temperature/age.
Separate pull-up/pull-down outputs Enables independent slew-rate control of rising/falling edges via external gate resistors on VOA/VOB.
Dedicated enable pin Provides hardware-level fault response: asserts within tSD (≤100 ns) to force safe shutdown during system-level faults.
Programmable dead time Resistor-tuned delay avoids cross-conduction without requiring external logic or microcontroller intervention.
Automotive-grade qualification AEC-Q100 Grade 1 certification with PPAP-ready documentation and IMDS/CAMDS material declarations.

Applications

Solar Power Inverter Traction Inverter

Use Scenario: Driving high-voltage SiC half-bridges in string inverters handling up to 1500 V DC bus.

IC Role / Device Role / Timing Role: Isolated PWM-to-gate driver providing shoot-through protection and 60 ns timing precision across isolation barrier.

Use Value: Enables >99% efficiency at 100 kHz switching with 200 kV/µs CMTI immunity to PV array transients.

Use Scenario: Controlling dual IGBT modules in EV traction inverters operating at –40 °C to +125 °C ambient.

IC Role / Device Role / Timing Role: AEC-Q100-qualified isolated gate driver delivering 4 A peak current with programmable dead time for torque ripple reduction.

Use Value: Supports ASIL-B functional safety architecture via independent UVLO on VDDA/VDDB and hardware EN pin.

Onboard Charger (OBC) Battery Management System (BMS)

Use Scenario: Bidirectional AC/DC conversion in 11 kW OBCs using interleaved totem-pole PFC and LLC resonant stages.

IC Role / Device Role / Timing Role: Dual isolated driver managing synchronous rectification and high-side switching with precise dead-time tuning.

Use Value: Reduces gate drive losses by 35% vs. optocoupler-based solutions due to lower RDS(ON) (1.0 Ω low-side).

Use Scenario: Isolating gate signals in modular battery pack contactor drivers and cell-balancing switches.

IC Role / Device Role / Timing Role: Reinforced-isolation driver enabling safe 1000 V+ potential separation between control MCU and HV battery stack.

Use Value: Meets UL 1577 2.5 kVRMS and VDE 60747-17 basic insulation standards for functional safety in battery disconnect units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si8274AB4D-AS1 Same SOIC-16 package and pinout; differs only in CMTI rating (150 kV/µs vs. 200 kV/µs) and lack of AEC-Q100 qualification. Targeted at industrial SMPS and UPS where automotive reliability is not required. Select when cost sensitivity outweighs need for highest noise immunity or automotive certification.
UCC5390SCDR Texas Instruments part; 4 A output, 45 ns propagation delay, but uses capacitive isolation and lacks programmable dead time. Used in high-speed GaN designs where minimal delay dominates over shoot-through margin control. Choose when sub-50 ns timing is critical and external dead-time generation is acceptable.

Compared with SI8274GB4D-AS1, Si8274AB4D-AS1 offers identical functionality at lower cost but reduced noise immunity and no automotive qualification, while UCC5390SCDR trades programmable dead time for faster propagation - making SI8274GB4D-AS1 optimal for automotive and solar inverters demanding both robustness and precise overlap control.

Availability

SI8274GB4D-AS1 is available at Aetrix Electronics and suitable for solar power inverters, traction inverters, onboard chargers, and battery management systems requiring stable component supply across extended product lifecycles.

Supply support for SI8274GB4D-AS1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and timing technologies for high-reliability applications.

The Si827x product line was designed specifically for isolated gate driving in high-voltage power conversion systems, emphasizing CMTI resilience, AEC-Q100 compliance, and flexible dead-time control for SiC/GaN adoption in automotive and renewable energy markets.

FAQ

What is the maximum dead-time range achievable with SI8274GB4D-AS1?

The SI8274GB4D-AS1 supports programmable dead time from 10 ns to 700 ns, set by connecting a resistor RDT (6–100 kΩ) between the DT pin and GNDI. The exact value follows DT = 2.02 × RDT + 7.77 (for 10–200 ns) or DT = 6.06 × RDT + 3.84 (for 20–700 ns), as specified in the Skyworks Si827x datasheet Rev. 206327E. This allows precise shoot-through mitigation across diverse FET technologies.

Does SI8274GB4D-AS1 require external components for basic operation?

Yes - SI8274GB4D-AS1 requires external bypass capacitors (0.1 µF || 10 µF) on VDDI, VDDA, and VDDB pins, placed within 2 mm of respective pins. A 0.1 µF ceramic capacitor must also be placed in parallel with RDT on the DT pin for noise immunity. No external level shifters or optocouplers are needed, as isolation and level translation are integrated.

How does SI8274GB4D-AS1 handle undervoltage conditions on its power supplies?

SI8274GB4D-AS1 implements independent UVLO on VDDI, VDDA, and VDDB. If VDDI drops below VDDIUV–, outputs go Hi-Z; if VDDA or VDDB falls below their respective UVLO thresholds, corresponding VOA or VOB is forced low. This ensures fail-safe behavior during brownouts - a key requirement validated in AEC-Q100 testing for automotive use cases.

Can SI8274GB4D-AS1 drive both high-side and low-side switches in a half-bridge without additional circuitry?

Yes - SI8274GB4D-AS1 is explicitly designed for half-bridge gate driving: VOA and VOB provide complementary outputs driven by a single PWM input, with inherent overlap protection and user-programmable dead time. Its isolated dual-supply architecture (VDDA/GNDA and VDDB/GNDB) eliminates need for bootstrap diodes or floating supplies in high-side configurations.

What safety certifications does SI8274GB4D-AS1 hold?

SI8274GB4D-AS1 is UL 1577 recognized (2.5 kVRMS for 1 minute), CSA 62368-1 certified (basic insulation), VDE 60747-17 compliant (basic insulation), and CQC GB4943.1 approved. All certifications apply to the SOIC-16WB package variant and are documented in Skyworks' official compliance reports for the Si827x family.

SI8274GB4D-AS1 Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
SI827x
Package/Case:
16-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Active
Technology:
RF Coupling
Number of Channels:
2
Voltage - Isolation:
2500Vrms
Common Mode Transient Immunity (Min):
200kV/µs
Propagation Delay tpLH / tpHL (Max):
105ns, 75ns
Pulse Width Distortion (Max):
47ns
Rise / Fall Time (Typ):
10.5ns, 13.3ns
Current - Output High, Low:
1.8A, 4A
Current - Peak Output:
4A
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
4.2V ~ 30V
Grade:
Automotive
Qualification:
AEC-Q100
Operating Temperature:
-40°C ~ 125°C
Mounting Type:
Surface Mount
Supplier Device Package:
16-SOIC
Approval Agency:
CQC, CSA, UL, VDE

SI8274GB4D-AS1 FAQ

1.How can I place an order for SI8274GB4D-AS1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8274GB4D-AS1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8274GB4D-AS1 reliable?

The price and inventory of SI8274GB4D-AS1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8274GB4D-AS1 is usually 5 days.

3.What payment methods are accepted for SI8274GB4D-AS1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8274GB4D-AS1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8274GB4D-AS1?

SI8274GB4D-AS1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8274GB4D-AS1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8274GB4D-AS1?

For technical support, including SI8274GB4D-AS1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8274GB4D-AS1 requirements.

6.How does Aetrix verify that SI8274GB4D-AS1 is sourced from the original manufacturer or authorized distributors?

All SI8274GB4D-AS1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8274GB4D-AS1 meets industry standards.

7.What is the process for return or replacement of SI8274GB4D-AS1?

All SI8274GB4D-AS1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8274GB4D-AS1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8274GB4D-AS1 part is unused and in its original packaging.

Return procedure for SI8274GB4D-AS1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SI8274GB4D-AS1 Tags

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