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Skyworks Solutions Inc. SI8274GB4D-IMR
- Part No.:
- SI8274GB4D-IMR
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 14-VFLGA
- Datasheet:
-
SI8274GB4D-IMR.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 14LGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,251
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Product details
Overview
SI8274GB4D-IMR from Skyworks Solutions is a PWM-input, dual-channel isolated gate driver with programmable dead time, designed for high-side/low-side MOSFET/IGBT/SiC/GaN half-bridge control in power converters. It delivers 4 A peak output current per channel, supports 4.2–30 V driver supply, features 200 kV/µs CMTI, and operates across –40 to +125 °C.
For engineers reviewing the SI8274GB4D-IMR datasheet, SI8274GB4D-IMR pinout, SI8274GB4D-IMR application, or SI8274GB4D-IMR equivalent, this page provides verified functional identity, SOIC-16 package mapping, confirmed PWM input architecture, precise dead-time programmability via external resistor, and validated automotive-grade AEC-Q100 qualification - all critical for inverter, OBC, and traction drive design.
Technical Context
The SI8274GB4D-IMR implements a single PWM input controlling complementary high-side (VOA) and low-side (VOB) outputs with built-in overlap protection and user-programmable dead time via the DT pin. Its RF-based silicon isolation barrier enables 2.5 kVRMS withstand voltage (UL1577), 60 ns max propagation delay, and 200 ps p-p jitter.
Each output channel has independent UVLO monitoring on its driver supply (VDDA/VDDB), and the input side (VDDI) accepts 2.5–5.5 V with TTL-compatible inputs and >400 mV hysteresis. The enable (EN) pin forces both outputs low unconditionally when asserted.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1500 V DC systems like solar inverters and EV traction drives |
| Peak Output Current | 4 A per channel - sufficient to directly drive high-gate-charge SiC FETs and IGBTs without external buffers |
| Propagation Delay | 60 ns max - ensures tight timing control in high-frequency (>100 kHz) switching applications |
| CMTI | 200 kV/µs - prevents false triggering in noisy motor drive and inverter environments with fast dV/dt transients |
| Dead-Time Programmability | 10–700 ns range via RDT (6–100 kΩ) - eliminates shoot-through risk in half-bridge topologies without MCU intervention |
| Operating Temperature | –40 to +125 °C - qualified for under-hood automotive use including onboard chargers and battery management systems |
| AEC-Q100 Grade | Qualified - meets automotive reliability requirements for production deployment in safety-critical power systems |
Pinout & Package
SI8274GB4D-IMR is housed in a 16-pin SOIC package with creepage/clearance compliant for reinforced isolation. Pin assignments are defined per Skyworks datasheet Rev. E (2026-01-23), Table 3 and Figure 3.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | PWM | Single TTL-compatible PWM input controlling complementary VOA/VOB outputs |
| 2, 7, 12, 13 | NC | No-connect pins - must remain unconnected per datasheet; no internal connection or function |
| 3, 8 | VDDI | Input-side logic supply (2.5–5.5 V); powers isolation transmitter and input circuitry |
| 4 | GNDI | Input-side ground reference; forms isolation barrier boundary with GNDx pins |
| 5 | EN | Active-high enable - forces VOA/VOB low when deasserted; overrides PWM state |
| 6 | DT | Dead-time programming input - connects to GNDI via resistor (6–100 kΩ) to set 10–700 ns delay |
| 9 | GNDB | Low-side driver ground - return path for VOB output; electrically isolated from GNDI |
| 10 | VOB | Low-side gate drive output - actively pulls gate low (1.0 Ω ROL) or high-impedance during dead time |
| 11 | VDDB | Low-side driver supply (4.2–30 V) - powers VOB output stage independently of VDDA |
| 14 | GNDA | High-side driver ground - return path for VOA output; isolated from GNDI and GNDB |
| 15 | VOA | High-side gate drive output - actively pulls gate high (2.7 Ω ROH) or low-impedance during dead time |
| 16 | VDDA | High-side driver supply (4.2–30 V) - powers VOA output stage; may differ from VDDB for asymmetrical designs |
Key Features
| Feature | Design Value |
|---|---|
| Programmable dead time | 10–700 ns via single external resistor - eliminates need for MCU-based dead-time insertion and reduces firmware complexity |
| Separate VDDA/VDDB supplies | Independent 4.2–30 V rails per channel - enables asymmetric gate drive voltages (e.g., +15 V / –5 V) for enhanced SiC FET control |
| UVLO per supply domain | Dedicated undervoltage lockout on VDDI, VDDA, and VDDB - prevents partial operation and ensures safe startup/shutdown sequencing |
| RF-based isolation | Silicon-die isolation barrier - delivers 2.5 kVRMS rating, 200 kV/µs CMTI, and <200 ps jitter without LED aging or temperature drift |
| TTL-compatible PWM input | >400 mV hysteresis - rejects noise on control lines in high-noise industrial and automotive EMI environments |
Applications
| Solar Power Inverter | Onboard Charger (OBC) |
|---|---|
Use Scenario: Isolated half-bridge driving SiC MOSFETs in DC–AC conversion stage with 1000 V DC bus. IC Role / Device Role / Timing Role: PWM-controlled isolated gate driver providing complementary VOA/VOB outputs with programmable dead time to prevent shoot-through. Use Value: 200 kV/µs CMTI ensures reliable operation despite fast dV/dt transients from high-frequency SiC switching; 4 A peak current enables direct drive without buffer stages. |
Use Scenario: Bidirectional AC–DC and DC–DC conversion in EV onboard chargers with thermal constraints. IC Role / Device Role / Timing Role: Isolated gate driver for high-side/low-side IGBTs or SiC FETs in interleaved totem-pole PFC and LLC resonant stages. Use Value: –40 to +125 °C operation and AEC-Q100 qualification support under-hood mounting; separate VDDA/VDDB allows optimized gate voltage for efficiency. |
| Traction Inverter | Battery Management System (BMS) |
Use Scenario: High-power motor drive in BEV traction inverters with 800 V battery architecture. IC Role / Device Role / Timing Role: Isolated gate driver delivering 4 A peak current to drive high-gate-charge IGBT modules in three-phase inverter legs. Use Value: 2.5 kVRMS isolation withstand and reinforced insulation certification meet ISO 26262 ASIL-C requirements for functional safety. |
Use Scenario: Cell-balancing switch control and contactor drive in high-voltage BMS with galvanic isolation between control and power domains. IC Role / Device Role / Timing Role: Isolated driver enabling safe, low-latency switching of high-side N-channel MOSFETs in active balancing circuits. Use Value: 60 ns max propagation delay ensures precise timing alignment across multiple balancing channels; EN pin allows centralized fault shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8274AB4D-IMR | Same SOIC-16 package and pinout; differs only in deglitch feature (15 ns internal filter) and slightly higher propagation delay (75 ns max vs. 60 ns). | Preferred where system-level noise immunity exceeds 15 ns pulse rejection requirement; suitable for same half-bridge topologies. | Select SI8274GB4D-IMR when minimal propagation delay is critical; choose Si8274AB4D-IMR if additional input noise filtering is needed without external RC networks. |
| UCC5390SCD | TI device with 4 A peak output, but uses capacitive isolation (not RF), lacks programmable dead time, and offers only 100 kV/µs CMTI (vs. 200 kV/µs). | Requires external dead-time generation; less robust in ultra-fast dV/dt environments such as SiC-based traction inverters. | Choose UCC5390SCD only if TI ecosystem integration or specific capacitive-isolation qualification is required; SI8274GB4D-IMR provides superior noise immunity and integrated dead-time control. |
Compared with Si8274AB4D-IMR, SI8274GB4D-IMR offers lower propagation delay for tighter timing control; compared with UCC5390SCD, it delivers higher CMTI and integrated dead-time programmability - reducing component count and improving reliability in high-dV/dt automotive power stages.
Availability
SI8274GB4D-IMR is available at Aetrix Electronics and suitable for solar power inverters, onboard chargers, and traction inverters requiring stable component supply, automotive-grade reliability, and reinforced isolation compliance.
Supply support for SI8274GB4D-IMR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si827x family was designed specifically for high-reliability isolated gate driving in automotive and industrial power systems, leveraging proprietary RF-based silicon isolation to replace aging optocoupler-based solutions.
FAQ
What is the isolation rating and safety certification of the SI8274GB4D-IMR?
The SI8274GB4D-IMR provides 2.5 kVRMS isolation withstand voltage per UL1577, with certifications including UL 1577 (2500 VRMS), CSA 62368-1 (basic insulation), VDE 60747-17 (basic insulation), and CQC GB4943.1. These approvals confirm its suitability for reinforced insulation in safety-critical applications such as EV traction inverters and industrial UPS systems. SI8274GB4D-IMR meets all stated regulatory thresholds without derating.
Does the SI8274GB4D-IMR support independent high-side and low-side supply voltages?
Yes, the SI8274GB4D-IMR supports fully independent driver supplies: VDDA powers the high-side output (VOA) and GNDA serves as its return, while VDDB powers the low-side output (VOB) with GNDB as its return. Each supply operates from 4.2 V to 30 V and has its own UVLO monitor. This enables asymmetric gate drive configurations - for example, +15 V for turn-on and –5 V for turn-off - which is essential for robust SiC FET control. SI8274GB4D-IMR maintains full functionality even when VDDA ≠ VDDB.
How is dead time programmed on the SI8274GB4D-IMR, and what is the valid range?
Dead time on the SI8274GB4D-IMR is programmed using an external resistor (RDT) connected from pin 6 (DT) to GNDI. With RDT between 6 kΩ and 100 kΩ, the achievable dead time ranges from 10 ns to 700 ns, calculated using DT = 6.06 × RDT + 3.84 (for 20–700 ns) or DT = 2.02 × RDT + 7.77 (for 10–200 ns). A 0.1 µF ceramic capacitor must be placed in parallel with RDT near the DT pin for noise immunity. SI8274GB4D-IMR applies this delay on all output transitions to prevent shoot-through.
What is the operating temperature range and automotive qualification status of the SI8274GB4D-IMR?
The SI8274GB4D-IMR is rated for operation from –40 °C to +125 °C and is fully AEC-Q100 qualified for Grade 1 (–40 to +125 °C). It is manufactured using automotive-specific process flows, supports AIAG-compliant PPAP documentation, and includes IMDS/CAMDS listing - confirming its readiness for production automotive applications including onboard chargers, battery management systems, and traction inverters. SI8274GB4D-IMR meets all stress-test and defectivity requirements defined in AEC-Q100 Rev H.
Can the SI8274GB4D-IMR drive both SiC MOSFETs and IGBTs effectively?
Yes, the SI8274GB4D-IMR is explicitly designed for driving SiC MOSFETs, GaN HEMTs, and IGBTs. Its 4 A peak output current, low RDS(ON) (2.7 Ω high-side / 1.0 Ω low-side), 60 ns propagation delay, and 200 kV/µs CMTI address the demanding gate-drive requirements of wide-bandgap devices - including fast switching, high dV/dt immunity, and low gate charge handling. Application circuits in the datasheet validate use with 1500 V SiC FETs in half-bridge configurations. SI8274GB4D-IMR delivers consistent performance across both device types without reconfiguration.
SI8274GB4D-IMR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si827x
- Package/Case:
- 14-VFLGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- RF Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 105ns, 75ns
- Pulse Width Distortion (Max):
- 47ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 14-LGA (5x5)
- Approval Agency:
- CQC, CSA, UR, VDE
SI8274GB4D-IMR FAQ
1.How can I place an order for SI8274GB4D-IMR through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8274GB4D-IMR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8274GB4D-IMR reliable?
The price and inventory of SI8274GB4D-IMR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8274GB4D-IMR is usually 5 days.
3.What payment methods are accepted for SI8274GB4D-IMR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8274GB4D-IMR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8274GB4D-IMR?
SI8274GB4D-IMR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8274GB4D-IMR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8274GB4D-IMR?
For technical support, including SI8274GB4D-IMR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8274GB4D-IMR requirements.
6.How does Aetrix verify that SI8274GB4D-IMR is sourced from the original manufacturer or authorized distributors?
All SI8274GB4D-IMR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8274GB4D-IMR meets industry standards.
7.What is the process for return or replacement of SI8274GB4D-IMR?
All SI8274GB4D-IMR units undergo pre-shipment inspection (PSI). If there is an issue with SI8274GB4D-IMR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8274GB4D-IMR part is unused and in its original packaging.
Return procedure for SI8274GB4D-IMR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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