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Skyworks Solutions Inc. SI8275AB-AS1R
- Part No.:
- SI8275AB-AS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8275AB-AS1R.pdf
- Description:
- LINEAR IC
- Quantity:
- Payment:
- Shipping:
Inventory:4,632
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Product details
Overview
SI8275AB-AS1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN half-bridge and dual-switch applications. It delivers 4 A peak output current per channel, supports 4.2–30 V driver supply voltage, features 60 ns max propagation delay, 200 kV/µs common-mode transient immunity (CMTI), and operates across –40 to +125 °C. It is used in solar inverters and motor drives where independent high-side/low-side control with robust isolation is required.
For engineers reviewing the SI8275AB-AS1R datasheet, SI8275AB-AS1R pinout, SI8275AB-AS1R application, or SI8275AB-AS1R equivalent, key selection considerations include dual independent digital inputs (VIA/VIB), separate driver supplies (VDDA/VDDB), no overlap protection or dead-time programmability, SOIC-16 package with 2.5 kVRMS isolation, and AEC-Q100 qualification for automotive-grade reliability.
Technical Context
The SI8275AB-AS1R implements two independent RF-based isolation channels using Skyworks' proprietary silicon isolation barrier, each supporting up to 2.5 kVRMS withstand voltage per UL1577. Each channel includes dedicated UVLO monitoring on its driver supply (VDDA and VDDB) and input supply (VDDI), ensuring safe operation during power sequencing.
It uses TTL-compatible inputs with >400 mV hysteresis and provides separate pull-up/pull-down outputs (VOA/VOB) for precise slew-rate control. Unlike Si8273/Si8274 variants, it lacks overlap protection logic and dead-time programming - enabling fully independent, non-interlocked dual-channel drive for asymmetric topologies or dual low-side configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in industrial and automotive systems requiring basic safety compliance. |
| Peak Output Current | 4 A per channel - sufficient to directly drive medium-power SiC/GaN FETs without external buffers in <10 kW inverters. |
| Propagation Delay | 60 ns max - ensures tight timing alignment between dual channels for synchronous switching in interleaved or parallel converters. |
| CMTI | 200 kV/µs - maintains signal integrity in high-dV/dt environments such as 1500 V DC-link solar inverters and traction drives. |
| Supply Range | VDDI: 2.5–5.5 V; VDDA/VDDB: 4.2–30 V - allows flexible MCU-level logic interfacing and wide-range gate drive voltage tuning (e.g., 12 V for IGBTs, 15 V for SiC). |
| Operating Temperature | –40 to +125 °C - qualified for under-hood automotive use and industrial ambient conditions without derating. |
| AEC-Q100 Grade | Qualified - meets stress test requirements for automotive electronics including temperature cycling, HTOL, and ESD (HBM 3.5 kV). |
Pinout & Package
SI8275AB-AS1R is housed in a 16-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments follow the Si8273/75 layout per datasheet Figure 2 and Table 2.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | VIA, VIB | Independent TTL-compatible digital inputs - control VOA and VOB separately; no inter-channel logic coupling. |
| 3, 8 | VDDI | Shared input-side power supply - powers both isolation transmitters and EN logic; must be decoupled locally. |
| 4 | GNDI | Input-side reference ground - forms isolation barrier boundary; requires separate plane from GNDA/GNDB. |
| 5 | EN | Global enable - forces both VOA and VOB low when asserted; active-high, referenced to GNDI. |
| 9, 11 | GNDB, VDDB | Driver B side ground and supply - electrically isolated from A side; supports independent floating biasing. |
| 10 | VOB | Driver B output - push-pull structure with 1.0 Ω ROL and 2.7 Ω ROH - optimized for fast turn-on/turn-off of power FET gates. |
| 14, 16 | GNDA, VDDA | Driver A side ground and supply - fully isolated from B side; enables true galvanic separation in dual-output topologies. |
| 15 | VOA | Driver A output - identical electrical specs to VOB; allows symmetrical dual low-side, dual high-side, or split half-bridge configurations. |
| 6, 7, 12, 13 | NC | No-connect pins - must remain unconnected; not internally bonded or tested. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent isolation channels | Enables asymmetric drive schemes - e.g., one channel for high-side SiC FET, another for low-side IGBT - without shared timing constraints. |
| Separate VDDA/VDDB and GNDA/GNDB supplies | Supports fully floating operation of each output stage - critical for multi-level converters and transformerless PV inverters. |
| 4 A peak sink/source per channel | Drives gate charges up to ~100 nC at 15 V without external buffers - reduces BOM count in 3–10 kW power stages. |
| 200 kV/µs CMTI with 2.5 kVRMS isolation | Prevents false triggering in 1500 V DC-link systems with fast-switching SiC devices (dv/dt > 50 V/ns). |
| AEC-Q100 qualified with –40 to +125 °C operation | Validated for automotive onboard chargers and battery management systems requiring zero-defect reliability over 15-year lifetime. |
Applications
| Solar Power Inverter | Motor Control Drive |
|---|---|
|
Use Scenario: Dual-channel isolated drive for IGBT half-bridge in string inverters with 1000–1500 V DC-link. IC Role / Device Role: SI8275AB-AS1R provides independent gate control for high-side and low-side IGBTs, with separate VDDA/VDDB supplies enabling bootstrap-free high-side operation. Use Value: Eliminates need for auxiliary isolated supplies or complex level-shifting circuits while maintaining 200 kV/µs noise immunity during rapid DC-link transients. |
Use Scenario: Dual low-side gate drive in 3-phase PMSM servo drives with discrete current sensing. IC Role / Device Role: SI8275AB-AS1R drives all three low-side switches (U/V/W) via two channels plus one spare, with shared VDDI and independent GNDA/GNDB for noise isolation. Use Value: Reduces PCB area and component count versus three single-channel isolators while preserving channel-to-channel timing skew <1 ns. |
| Onboard Charger (OBC) | Battery Management System (BMS) |
|
Use Scenario: Isolated gate drive for AC/DC and DC/DC stages in bi-directional OBCs with SiC MOSFETs. IC Role / Device Role: SI8275AB-AS1R controls primary-side SiC switches and secondary-side synchronous rectifiers using separate isolated domains. Use Value: Enables compact, high-efficiency 11 kW OBC designs meeting ISO 6469-3 functional safety requirements through certified 2.5 kVRMS isolation. |
Use Scenario: Isolated gate drive for contactor control and pre-charge circuits in high-voltage EV battery packs (400–800 V). IC Role / Device Role: SI8275AB-AS1R drives high-side NMOS contactor drivers and low-side pre-charge FETs with independent UVLO monitoring per channel. Use Value: Ensures fail-safe open-circuit behavior during supply faults - VOA/VOB default low if VDDA or VDDB drops below UVLO threshold. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8273AD-AS1R | Includes hardware overlap protection logic; same SOIC-16 package and pinout except DT/EN pin reassignment. | Required for half-bridge topologies where shoot-through prevention is mandatory; not suitable for independent dual-switch control. | Select SI8275AB-AS1R when full channel independence is needed; choose Si8273AD-AS1R only when interlocked high-side/low-side timing is required. |
| ISO5852SMDWR | Texas Instruments part with 5.7 kVRMS isolation, 2.5 A peak output, and integrated Miller clamp; different SOIC-16 pinout and higher propagation delay (100 ns). | Preferred for ultra-high-isolation applications (e.g., medical or grid-tie inverters) but lacks independent dual supplies and AEC-Q100 qualification. | SI8275AB-AS1R offers superior CMTI (200 vs. 100 kV/µs), higher peak current (4 vs. 2.5 A), and automotive qualification - critical for EV traction systems. |
Compared with Si8273AD-AS1R, SI8275AB-AS1R trades overlap protection for full channel autonomy - enabling novel topologies like dual active bridge or asymmetrical half-bridge. Against ISO5852SMDWR, it delivers higher drive strength and automotive-grade reliability at lower propagation latency, though with reduced isolation rating.
Availability
SI8275AB-AS1R is available at Aetrix Electronics and suitable for solar power inverters, EV onboard chargers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant performance.
Supply support for SI8275AB-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.
The Si827x product line was engineered specifically for high-reliability isolated gate driving in power conversion systems - emphasizing dV/dt immunity, timing precision, and automotive-grade robustness over optocoupler alternatives.
FAQ
What is the isolation rating and certification status of the SI8275AB-AS1R?
The SI8275AB-AS1R provides 2.5 kVRMS withstand voltage per UL1577, with VDE 60747-17, CSA 62368-1, and CQC GB4943.1 certifications for basic insulation. It is rated for reinforced insulation in end-equipment meeting IEC 62368-1 and IEC 60747-17 requirements. These certifications apply directly to the SI8275AB-AS1R device as shipped, not just the family.
Does the SI8275AB-AS1R support programmable dead time or overlap protection?
No. The SI8275AB-AS1R is a dual independent driver with no hardware overlap protection or dead-time programmability - unlike Si8273 or Si8274 variants. Its truth table (Table 5) confirms that VIA and VIB operate fully independently, allowing simultaneous high states on VOA and VOB. This makes SI8275AB-AS1R appropriate for dual low-side, dual high-side, or asymmetrical topologies where interlock is managed externally.
What are the supply voltage requirements for the SI8275AB-AS1R inputs and outputs?
The SI8275AB-AS1R requires VDDI = 2.5–5.5 V for the input side (pins 3,8), and separate driver supplies: VDDA = 4.2–30 V (pin 16) and VDDB = 4.2–30 V (pin 11). Each driver supply has independent UVLO thresholds - VDDAUV+ = 4.0 V typical, VDDBUV+ = 4.0 V typical - and both must exceed their respective thresholds for corresponding outputs (VOA/VOB) to function.
How does the enable (EN) pin function on the SI8275AB-AS1R?
The EN pin (pin 5) is an active-high, input-side control signal referenced to GNDI. When EN = low, both VOA and VOB are forced low regardless of VIA/VIB states. Device operation resumes within tRESTART ≤ 1 µs after EN returns high, provided VDDI is above UVLO. If VDDI is below UVLO, EN has no effect - VOA/VOB remain low until VDDI stabilizes.
Is the SI8275AB-AS1R pin-compatible with other Si827x family members?
No. SI8275AB-AS1R shares the SOIC-16 package and pin numbering with Si8273/Si8274, but pin functions differ: EN is on pin 5 (same), but DT is absent and pins 6/7/12/13 are NC in SI8275AB-AS1R - whereas Si8274 uses pin 6 for DT and pins 2/7/12/13 as NC. Direct substitution without schematic and layout review will cause functional failure.
SI8275AB-AS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si827x
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Capacitive Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8275AB-AS1R FAQ
1.How can I place an order for SI8275AB-AS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8275AB-AS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8275AB-AS1R reliable?
The price and inventory of SI8275AB-AS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8275AB-AS1R is usually 5 days.
3.What payment methods are accepted for SI8275AB-AS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8275AB-AS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8275AB-AS1R?
SI8275AB-AS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8275AB-AS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8275AB-AS1R?
For technical support, including SI8275AB-AS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8275AB-AS1R requirements.
6.How does Aetrix verify that SI8275AB-AS1R is sourced from the original manufacturer or authorized distributors?
All SI8275AB-AS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8275AB-AS1R meets industry standards.
7.What is the process for return or replacement of SI8275AB-AS1R?
All SI8275AB-AS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8275AB-AS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8275AB-AS1R part is unused and in its original packaging.
Return procedure for SI8275AB-AS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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