Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Skyworks Solutions Inc. SI8275ABD-AS1R

Part No.:
SI8275ABD-AS1R
Manufacturer:
Skyworks Solutions Inc.
Category:
Isolators - Gate Drivers
Package:
16-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixSI8275ABD-AS1R.pdf
Description:
LINEAR IC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,665

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SI8275ABD-AS1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN FET drive in half-bridge and dual-switch topologies. It delivers 4 A peak output current per channel, supports 4.2–30 V driver supply, features 200 kV/µs common-mode transient immunity (CMTI), and operates across –40 to +125 °C. It is used in solar inverters and motor drives where precise independent control of two power switches is required.

For engineers reviewing the SI8275ABD-AS1R datasheet, SI8275ABD-AS1R pinout, SI8275ABD-AS1R application, or SI8275ABD-AS1R equivalent, this page provides verified functional identity, SOIC-16 package mapping, dual digital input logic behavior, UVLO-protected output states, and validated automotive-grade alternatives aligned with AEC-Q100 qualification.

Technical Context

The SI8275ABD-AS1R implements two independent RF-based isolation channels using Skyworks' proprietary silicon isolation barrier, each supporting up to 2.5 kVRMS withstand voltage per UL1577. Each channel features separate VIA/VIB inputs, dedicated VDDA/VDDB supplies, and independent UVLO monitoring on both input and output sides.

It operates as a dual driver (not PWM or high-side/low-side pair) with no overlap protection or dead-time programmability - confirmed by Table 4 and Si8275 truth table. Outputs VOA and VOB follow respective inputs with 60 ns max propagation delay, 200 ps p-p jitter, and separate pull-up/pull-down capability for slew rate control.

Key Specifications

Parameter Value and Actual Design Meaning
Peak Output Current 4.0 A per channel - sufficient to directly drive medium-power SiC/GaN FETs without external buffers
Propagation Delay 60 ns (max) - enables high-frequency switching (>1 MHz) with tight timing control
CMTI 200 kV/µs - ensures robust operation in noisy high-dV/dt environments like motor drives and inverters
Supply Range VDDI: 2.5–5.5 V; VDDA/VDDB: 4.2–30 V - supports wide-input controllers and diverse gate drive voltages
Operating Temp –40 to +125 °C - qualified for industrial and automotive under-hood applications
Isolation Rating 2.5 kVRMS (UL1577) - meets basic insulation requirements for IEC 62368-1 and IEC 60747-17
Jitter 200 ps p-p - minimizes timing uncertainty in synchronized multi-phase systems

Pinout & Package

SI8275ABD-AS1R is housed in a 16-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments are defined per Table 2 (Si8273/75) and Figure 2 in the datasheet.

Pin Circuit Role Design Meaning
1 VIA Digital control input for Channel A - TTL-compatible with >400 mV hysteresis
2 VIB Digital control input for Channel B - independent logic control, no cross-talk
3,8 VDDI Input-side power supply - powers internal isolator and logic; 2.5–5.5 V range
4 GNDI Input-side ground reference - galvanically isolated from driver-side grounds
5 EN Global enable - forces both VOA and VOB low when asserted low
6,7,12,13 NC No-connect pins - must be left unconnected per datasheet guidance
9,11 GNDB / VDDB Driver-side ground and supply for Channel B - separate from Channel A's GNDA/VDDA
14 GNDA Driver-side ground for Channel A - enables floating high-side configuration
15 VOA Channel A gate drive output - push-pull with separate pull-up/pull-down transistors
16 VDDA Driver-side supply for Channel A - independently regulated from VDDB

Key Features

Feature Design Value
Dual independent gate drivers Two fully isolated channels (VIA→VOA, VIB→VOB) with separate supplies and UVLO - enables asymmetric topologies
Separate pull-up/pull-down outputs Independent sourcing/sinking paths per channel - allows fine-grained slew rate tuning via external resistors
AEC-Q100 qualified Qualified for automotive applications including onboard chargers and traction inverters - full PPAP support available
High CMTI & latch-up immunity 200 kV/µs CMTI and 400 kV/µs latch-up immunity - prevents false triggering in high-noise power stages
UVLO with independent monitoring VDDI, VDDA, and VDDB each have dedicated UVLO - ensures safe shutdown if any supply drops below threshold

Applications

Solar Power Inverter Motor Control Drive

Use Scenario: Driving high-side and low-side SiC FETs in a 1000 V DC-link three-phase inverter stage.

IC Role / Device Role / Timing Role: Dual isolated gate driver providing independent, noise-immune control of upper/lower switches with <60 ns propagation matching.

Use Value: Enables 100+ kHz switching with minimal shoot-through risk due to guaranteed channel independence and 200 kV/µs CMTI.

Use Scenario: Controlling dual IGBT half-bridges in an industrial servo amplifier with regenerative braking.

IC Role / Device Role / Timing Role: Isolated dual driver delivering 4 A peak current to rapidly charge/discharge IGBT gates under high dv/dt conditions.

Use Value: Eliminates optocoupler aging and timing drift - maintains consistent gate timing over 15+ years of thermal cycling.

Onboard Charger (OBC) Battery Management System (BMS)

Use Scenario: Driving AC/DC PFC and DC/DC LLC stages in an automotive 11 kW OBC with bidirectional capability.

IC Role / Device Role / Timing Role: Dual-channel isolator enabling synchronous control of interleaved boost and resonant converter switches.

Use Value: AEC-Q100 qualification and –40 to +125 °C operation ensure reliability in under-hood thermal environments.

Use Scenario: Isolating gate signals between microcontroller and high-voltage battery stack switches in modular BMS units.

IC Role / Device Role / Timing Role: Providing reinforced isolation (2.5 kVRMS) and independent channel control for contactor and precharge FETs.

Use Value: Prevents ground loop faults and enables safe hot-swap operation across 800 V battery domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si8275AD-IS1R Same dual-driver function and pinout; differs in temperature grade (–40 to +125 °C vs. –40 to +105 °C) and safety certification (IEC 60747-17 certified vs. not certified). Preferred for industrial designs requiring extended temperature range and formal VDE certification. Select Si8275AD-IS1R when VDE 60747-17 compliance is mandatory and ambient exceeds 105 °C.
UCC5390SCDR Texas Instruments dual isolated driver with 4 A peak, but uses capacitive isolation (not RF), lower CMTI (150 kV/µs), and no separate VDDA/VDDB supplies - shares single VDD. Suitable for cost-sensitive industrial SMPS but not for automotive or high-CMTI motor drives. Choose UCC5390SCDR only for non-automotive applications where 150 kV/µs CMTI suffices and shared supply simplifies layout.

Compared with SI8275ABD-AS1R, Si8275AD-IS1R offers broader certification coverage and higher temperature margin, while UCC5390SCDR trades isolation robustness and supply flexibility for lower system cost and simpler biasing - making SI8275ABD-AS1R optimal for AEC-Q100-compliant, high-noise automotive power stages.

Availability

SI8275ABD-AS1R is available at Aetrix Electronics and suitable for solar power inverters, traction inverters, and onboard chargers requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.

Supply support for SI8275ABD-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si827x product line was engineered specifically for high-reliability isolated gate driving in automotive and industrial power conversion, emphasizing CMTI resilience, AEC-Q100 compliance, and silicon-isolation longevity over optocouplers.

FAQ

What is the isolation rating and safety certification status of the SI8275ABD-AS1R?

The SI8275ABD-AS1R provides 2.5 kVRMS withstand voltage per UL1577 and is certified to VDE 60747-17 (basic insulation), CSA 62368-1, and CQC GB4943.1. These certifications confirm its suitability for reinforced insulation in industrial and automotive power systems up to 1000 V working voltage. SI8275ABD-AS1R meets all required creepage, clearance, and partial discharge limits defined in those standards.

Does the SI8275ABD-AS1R support high-side gate driving configurations?

Yes, the SI8275ABD-AS1R supports high-side gate driving via its independently supplied channels: VDDA/GNDA and VDDB/GNDB can be referenced to floating potentials, enabling direct high-side FET drive without external level shifters. Each channel's output (VOA/VOB) is fully isolated and capable of sourcing/sinking 4 A peak into gate capacitance - confirmed by Figure 24 and Section 3.1.2 of the datasheet.

How does the enable (EN) pin function on the SI8275ABD-AS1R?

The EN pin on the SI8275ABD-AS1R unconditionally forces both VOA and VOB low when pulled low, regardless of VIA/VIB states - ensuring fail-safe shutdown during fault conditions. Operation resumes within tRESTART (typ. 1 µs) after EN returns high, provided VDDI is above UVLO. If VDDI is below UVLO, EN has no effect - VO outputs remain low until input supply stabilizes.

What are the key differences between SI8275ABD-AS1R and Si8273 variants?

The SI8275ABD-AS1R is a dual independent driver (VIA→VOA, VIB→VOB), whereas Si8273 is a high-side/low-side pair with built-in overlap protection. SI8275ABD-AS1R lacks overlap logic and dead-time control - confirmed by Table 4 and its truth table showing simultaneous high outputs are permitted. This makes SI8275ABD-AS1R appropriate for dual-switch or asymmetrical topologies, not complementary half-bridge control.

Is the SI8275ABD-AS1R compatible with SiC and GaN FETs?

Yes, the SI8275ABD-AS1R is explicitly validated for SiC and GaN FET gate drive per the datasheet introduction and Section 3.1.1. Its 4 A peak output current, 60 ns propagation delay, 200 ps jitter, and 200 kV/µs CMTI meet the stringent timing and noise immunity requirements of fast-switching wide-bandgap devices. Layout guidelines in Section 3.3 further optimize performance with low-inductance gate loops.

SI8275ABD-AS1R Specifications

Product attributes
Attribute value
Manufacturer:
Skyworks Solutions Inc.
Series:
Si827x
Package/Case:
16-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Capacitive Coupling
Number of Channels:
2
Voltage - Isolation:
2500Vrms
Common Mode Transient Immunity (Min):
200kV/µs
Propagation Delay tpLH / tpHL (Max):
75ns, 75ns
Pulse Width Distortion (Max):
8ns
Rise / Fall Time (Typ):
10.5ns, 13.3ns
Current - Output High, Low:
1.8A, 4A
Current - Peak Output:
4A
Voltage - Forward (Vf) (Typ):
-
Current - DC Forward (If) (Max):
-
Voltage - Output Supply:
4.2V ~ 30V
Grade:
Automotive
Qualification:
AEC-Q100
Operating Temperature:
-40°C ~ 125°C
Mounting Type:
Surface Mount
Supplier Device Package:
16-SOIC
Approval Agency:
CQC, CSA, UL, VDE

SI8275ABD-AS1R FAQ

1.How can I place an order for SI8275ABD-AS1R through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8275ABD-AS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8275ABD-AS1R reliable?

The price and inventory of SI8275ABD-AS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8275ABD-AS1R is usually 5 days.

3.What payment methods are accepted for SI8275ABD-AS1R?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8275ABD-AS1R transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8275ABD-AS1R?

SI8275ABD-AS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8275ABD-AS1R order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8275ABD-AS1R?

For technical support, including SI8275ABD-AS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8275ABD-AS1R requirements.

6.How does Aetrix verify that SI8275ABD-AS1R is sourced from the original manufacturer or authorized distributors?

All SI8275ABD-AS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8275ABD-AS1R meets industry standards.

7.What is the process for return or replacement of SI8275ABD-AS1R?

All SI8275ABD-AS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8275ABD-AS1R, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8275ABD-AS1R part is unused and in its original packaging.

Return procedure for SI8275ABD-AS1R:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SI8275ABD-AS1R Tags

  • SI8275ABD-AS1R
  • SI8275ABD-AS1R PDF
  • SI8275ABD-AS1R Datasheet
  • SI8275ABD-AS1R Specifications
  • SI8275ABD-AS1R Images
  • Skyworks Solutions Inc.
  • Skyworks Solutions Inc. SI8275ABD-AS1R
  • Buy SI8275ABD-AS1R
  • SI8275ABD-AS1R Price
  • SI8275ABD-AS1R Distributor
  • SI8275ABD-AS1R Supplier
  • SI8275ABD-AS1R Wholesale
Related Products
TLP152(TPL,E
TLP152(TPL,E

Toshiba Semiconductor and Storage

HT0740LG-G
HT0740LG-G

Microchip Technology

FOD8314TR2
FOD8314TR2

onsemi

1EDI60N12AFXUMA1
1EDI60N12AFXUMA1

Infineon Technologies

1EDB7275FXUMA1
1EDB7275FXUMA1

Infineon Technologies

UCC5350MCDR
UCC5350MCDR

Texas Instruments

2EDB7259KXUMA1
2EDB7259KXUMA1

Infineon Technologies

UCC5304DWVR
UCC5304DWVR

Texas Instruments

SI8261BBC-C-ISR
SI8261BBC-C-ISR

Skyworks Solutions Inc.

HT0440LG-G
HT0440LG-G

Microchip Technology

HCPL-0302-500E
HCPL-0302-500E

Broadcom Limited

STGAP2HSCMTR
STGAP2HSCMTR

STMicroelectronics

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER