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Skyworks Solutions Inc. SI8275ABD-IS1R
- Part No.:
- SI8275ABD-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8275ABD-IS1R.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,598
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Product details
Overview
SI8275ABD-IS1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN FET control in half-bridge and dual-switch topologies. It delivers 4 A peak output current per channel, supports 4.2–30 V driver supply, features 60 ns max propagation delay, 200 kV/µs common-mode transient immunity (CMTI), and operates across –40 to +125 °C. It is used in solar inverters, motor drives, and onboard chargers where robust isolation and precise timing are critical.
For engineers reviewing the SI8275ABD-IS1R datasheet, SI8275ABD-IS1R pinout, SI8275ABD-IS1R application, or SI8275ABD-IS1R equivalent, key selection criteria include dual independent digital inputs (VIA/VIB), no overlap protection or dead-time programmability (distinguishing it from Si8273/Si8274), SOIC-16 package with 2.5 kVRMS UL1577 isolation, and AEC-Q100 qualification for automotive-grade reliability.
Technical Context
The SI8275ABD-IS1R implements two independent RF-based isolation channels using Skyworks' proprietary silicon isolation barrier-enabling 2.5 kVRMS withstand voltage and eliminating LED aging or CTR drift found in optocouplers. Each channel features separate input-to-output signal paths with dedicated UVLO monitoring on both input (VDDI) and each output supply (VDDA/VDDB).
It operates as a true dual driver: VIA controls VOA, VIB controls VOB, with no inter-channel logic coupling or built-in overlap protection. Outputs default low during UVLO and support flexible grounding-VOA/VOB may reference same or isolated grounds, enabling high-side, low-side, or dual low-side configurations without external level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 VAC systems and meets basic insulation requirements per IEC 62368-1/VDE 60747-17. |
| Peak Output Current | 4 A per channel - sufficient to directly drive high-gate-charge SiC/GaN FETs (e.g., 100 nC Qg) at >100 kHz with <10 Ω gate resistance. |
| Propagation Delay | 60 ns max - ensures tight timing control in high-frequency power converters, minimizing dead-time uncertainty and improving efficiency. |
| CMTI | 200 kV/µs - prevents false triggering in noisy high-dV/dt environments such as traction inverters or industrial motor drives. |
| Supply Range | VDDI: 2.5–5.5 V; VDDA/VDDB: 4.2–30 V - allows direct interfacing with 3.3 V/5 V controllers and flexible gate drive voltages (e.g., 12 V, 15 V, 20 V). |
| Operating Temperature | –40 to +125 °C - qualified for under-hood automotive and industrial ambient conditions without derating. |
| AEC-Q100 Grade | Qualified - meets stress test requirements for automotive electronics, including HTOL, TC, and ESD (HBM 3.5 kV, CDM 2 kV). |
Pinout & Package
SI8275ABD-IS1R is housed in a 16-pin wide-body SOIC package (SOIC-16WB) with creepage/clearance optimized for reinforced isolation. Pin assignments follow the Si8273/75 layout per datasheet Figure 2 and Table 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | VIA, VIB | Independent TTL-compatible logic inputs - high-true; each controls its respective output (VOA/VOB) without cross-talk or overlap logic. |
| 3, 8 | VDDI | Input-side power supply - powers isolation transmitter and logic interface; must be 2.5–5.5 V with local 0.1 µF + 1 µF decoupling. |
| 4 | GNDI | Input-side ground reference - forms isolation barrier boundary; must be separated from driver-side grounds by ≥8 mm creepage. |
| 5 | EN | Global enable - pulls both VOA and VOB low when asserted low; inactive if VDDI is below UVLO threshold (~2.3 V). |
| 6, 7, 12, 13 | NC | No-connect pins - electrically isolated; must remain unconnected and unstubbed to preserve CMTI and isolation integrity. |
| 9, 11 | GNDB, VDDB | Driver B side ground and supply - independent of A-side; enables floating high-side drive or split-rail configurations up to 1500 V DC potential difference. |
| 10 | VOB | Gate drive output B - 4 A sink/source capable; connects directly to gate of Q2 in half-bridge or second switch in dual-drive topology. |
| 14 | GNDA | Driver A side ground - galvanically isolated from GNDB; required for true dual-isolated operation (e.g., dual high-side drivers). |
| 15 | VOA | Gate drive output A - identical specs to VOB; drives Q1 gate with matched timing and drive strength for balanced switching. |
| 16 | VDDA | Driver A side supply - powers VOA output stage; must be 4.2–30 V and decoupled locally with low-ESR capacitor. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent gate drivers | Two fully isolated channels (VIA→VOA, VIB→VOB) with no shared logic or timing constraints - enables asymmetric PWM, phase-shifted control, or redundancy schemes. |
| Skyworks silicon isolation | RF-based barrier delivering 2.5 kVRMS UL1577 rating, 200 kV/µs CMTI, and <200 ps p-p jitter - eliminates optocoupler aging and improves long-term timing stability. |
| Separate supply domains | VDDI, VDDA, VDDB each monitored by independent UVLO - prevents partial operation; outputs go low if any supply drops below threshold (e.g., VDDAUV– ≈ 3.8 V). |
| TTL-compatible inputs with hysteresis | >400 mV input hysteresis - rejects noise on control lines in electrically harsh environments (e.g., near IGBT switching nodes or busbars). |
| Robust output stage | ROH = 2.7 Ω, ROL = 1.0 Ω - low RDS(ON) minimizes gate drive loss and enables fast turn-on/turn-off even with high gate charge devices. |
Applications
| Solar Power Inverter | Onboard Charger (OBC) |
|---|---|
|
Use Scenario: Driving high-side and low-side SiC MOSFETs in a 3-phase T-type inverter stage operating at 100 kHz switching frequency with 1200 V DC-link. IC Role / Device Role / Timing Role: SI8275ABD-IS1R provides isolated, synchronized gate drive signals to upper and lower switches in each leg, ensuring shoot-through prevention via independent control and fast propagation. Use Value: 60 ns max delay and 200 kV/µs CMTI prevent misfiring during rapid bus transients; dual supplies (VDDA/VDDB) allow independent optimization of high-side bootstrap and low-side ground-referenced drive voltages. |
Use Scenario: Controlling dual interleaved LLC resonant converter half-bridges in an 11 kW EV onboard charger, requiring precise timing and reinforced isolation between primary and secondary sides. IC Role / Device Role / Timing Role: SI8275ABD-IS1R serves as the isolated gate driver for both half-bridge legs, with VIA/VIB accepting phase-shifted PWM from MCU and delivering matched drive strength to GaN HEMTs. Use Value: AEC-Q100 qualification and –40 to +125 °C operation ensure reliability in under-hood thermal cycling; SOIC-16 package supports automated optical inspection and high-volume SMT assembly. |
| Motor Control Drive | Battery Management System (BMS) |
|
Use Scenario: Driving three half-bridge modules in a field-oriented controlled PMSM drive for industrial automation, where EMI immunity and thermal stability are critical. IC Role / Device Role / Timing Role: SI8275ABD-IS1R isolates MCU GPIOs from motor phase terminals and delivers 4 A peak current to rapidly charge/discharge 50 nC gate capacitances at 20 kHz PWM. Use Value: Separate pull-up/pull-down capability (via VOA/VOB sourcing/sinking) enables optimal gate resistor selection for EMI vs. switching loss trade-offs; low jitter preserves encoder-based current loop timing accuracy. |
Use Scenario: Isolating gate drive signals for active balancing FETs in a high-voltage battery pack (up to 900 V), where functional safety and long-term isolation integrity are mandated. IC Role / Device Role / Timing Role: SI8275ABD-IS1R provides reinforced isolation between microcontroller domain and high-voltage cell-string switching circuits, meeting ASIL-B functional safety requirements via design assurance. Use Value: 2.5 kVRMS isolation and VDE 60747-17 certification satisfy reinforced insulation requirements for HV battery systems; dual-channel independence avoids single-point failure in multi-string balancing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8273ABD-IS1R | Includes hardware overlap protection logic; identical pinout and isolation specs but adds automatic shoot-through prevention when VIA=VIB=high. | Preferred for half-bridge applications where software-level overlap control is undesirable or unreliable. | Select Si8273ABD-IS1R only if overlap protection is required; SI8275ABD-IS1R offers greater flexibility for non-complementary or phase-shifted control schemes. |
| ADUM4223BRIZ | Analog Devices part with 4 A output, 5.7 kVRMS isolation, but slower 85 ns propagation delay and lower 100 kV/µs CMTI; uses iCoupler capacitive isolation. | Used where higher isolation voltage is prioritized over timing precision or EMI immunity. | Choose ADUM4223BRIZ only if system requires >5 kVRMS working voltage; SI8275ABD-IS1R provides superior timing and noise immunity for high-frequency SiC/GaN designs. |
Compared with Si8273ABD-IS1R and ADUM4223BRIZ, SI8275ABD-IS1R uniquely balances ultra-fast timing (60 ns), industry-leading CMTI (200 kV/µs), and dual independent control-making it optimal for high-efficiency, high-density power stages where timing fidelity and noise resilience are non-negotiable.
Availability
SI8275ABD-IS1R is available at Aetrix Electronics and suitable for solar inverters, onboard chargers, and industrial motor drives requiring stable component supply, AEC-Q100 compliance, and long-lifecycle availability in SOIC-16 packaging.
Supply support for SI8275ABD-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and timing technologies for high-performance power and communications systems.
The Si827x product line was engineered specifically for isolated gate driving in next-generation power electronics-emphasizing silicon-based isolation reliability, high-speed timing, and automotive-grade robustness for SiC/GaN adoption.
FAQ
What is the isolation voltage rating of SI8275ABD-IS1R?
SI8275ABD-IS1R is rated for 2.5 kVRMS withstand voltage per UL1577 for one minute. This applies to the isolation barrier between input (VDDI/GNDI) and each output side (VDDA/GNDA and VDDB/GNDB). It also meets basic insulation requirements per VDE 60747-17 and CSA 62368-1, making it suitable for reinforced insulation in systems up to 1000 VAC working voltage.
Does SI8275ABD-IS1R include built-in overlap protection or dead-time control?
No, SI8275ABD-IS1R does not include hardware overlap protection or programmable dead time. Unlike Si8273ABD-IS1R (which has overlap logic) or Si8274ABD-IS1R (which supports dead-time resistor programming), SI8275ABD-IS1R provides two fully independent gate drivers-VIA controls VOA, VIB controls VOB-with no inter-channel logic. Dead time must be implemented externally in the controller PWM generation.
What are the supply voltage requirements for SI8275ABD-IS1R?
SI8275ABD-IS1R requires three independent supplies: VDDI (2.5–5.5 V) for the input side, VDDA (4.2–30 V) for driver A, and VDDB (4.2–30 V) for driver B. Each supply must be locally decoupled with 0.1 µF ceramic + 1 µF bulk capacitor. UVLO thresholds are ~2.3 V (VDDI) and ~3.8 V (VDDA/VDDB); outputs go low if any supply falls below its respective UVLO threshold.
Can SI8275ABD-IS1R drive both high-side and low-side switches in a half-bridge configuration?
Yes, SI8275ABD-IS1R can drive both high-side and low-side switches in a half-bridge. VOA can drive the high-side FET (e.g., using bootstrap or isolated DC/DC for VDDA), while VOB drives the low-side FET referenced to power ground. Its independent supply domains (VDDA/GNDA and VDDB/GNDB) and 1500 V DC inter-channel voltage capability (per datasheet Figure 24) support this configuration without additional level-shifting circuitry.
Is SI8275ABD-IS1R qualified for automotive applications?
Yes, SI8275ABD-IS1R is AEC-Q100 qualified (Grade 1: –40 to +125 °C) and designated as an automotive-grade part. It supports AIAG-compliant PPAP documentation, IMDS/CAMDS reporting, and is manufactured using automotive-specific process flows to ensure low defectivity and long-term reliability in automotive powertrain and charging systems.
SI8275ABD-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si827x
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- RF Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 200kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 75ns, 75ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.2V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UL, VDE
SI8275ABD-IS1R FAQ
1.How can I place an order for SI8275ABD-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8275ABD-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8275ABD-IS1R reliable?
The price and inventory of SI8275ABD-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8275ABD-IS1R is usually 5 days.
3.What payment methods are accepted for SI8275ABD-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8275ABD-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8275ABD-IS1R?
SI8275ABD-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8275ABD-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8275ABD-IS1R?
For technical support, including SI8275ABD-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8275ABD-IS1R requirements.
6.How does Aetrix verify that SI8275ABD-IS1R is sourced from the original manufacturer or authorized distributors?
All SI8275ABD-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8275ABD-IS1R meets industry standards.
7.What is the process for return or replacement of SI8275ABD-IS1R?
All SI8275ABD-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8275ABD-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8275ABD-IS1R part is unused and in its original packaging.
Return procedure for SI8275ABD-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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