Skyworks Solutions Inc. SI8275AB-IMR

Overview

SI8275AB-IMR from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN power switch control in half-bridge and dual-switch topologies. It delivers 4 A peak output current per channel, supports 4.2–30 V driver supply voltage, features independent VIA/VIB digital inputs, and provides 2.5 kVRMS isolation with 200 kV/µs CMTI - enabling robust operation in solar inverters and motor drives.

For engineers reviewing the SI8275AB-IMR datasheet, SI8275AB-IMR pinout, SI8275AB-IMR application, or SI8275AB-IMR equivalent, this page delivers verified technical context, exact pin functions for SOIC-16 packaging, real-world timing and drive capability specs, automotive-grade AEC-Q100 qualification status, and two validated alternative parts with documented functional and application differences.

Technical Context

The SI8275AB-IMR implements two independent isolated gate driver channels using Skyworks' proprietary RF-based silicon isolation barrier, supporting up to 2.5 kVRMS withstand voltage per UL1577. Each channel includes dedicated UVLO monitoring on its driver supply (VDDA/VDDB) and input supply (VDDI), with independent fault response.

It operates with TTL-compatible inputs (VIA/VIB) having >400 mV hysteresis, delivers 60 ns max propagation delay, 200 ps p-p jitter, and separate pull-up/pull-down outputs (VOA/VOB) for precise slew rate control - all without requiring external dead-time programming or overlap protection logic.

Key Specifications

Pinout & Package

SI8275AB-IMR is housed in a 16-pin SOIC package with wide creepage/clearance for reinforced isolation. Pin assignments are defined per Table 2 of the official datasheet for Si8273/75 variants.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Compared with Si8275AD-IMR, SI8275AB-IMR provides 15 ns lower propagation delay critical for >1 MHz SiC designs; versus UCC5390SCD, it delivers 33% higher CMTI and true dual-supply flexibility essential for high-voltage battery systems.

Availability

SI8275AB-IMR is available at Aetrix Electronics and suitable for solar power inverters, EV onboard chargers, and industrial motor control systems requiring stable component supply, automotive-grade reliability, and high-noise immunity.

Supply support for SI8275AB-IMR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si827x family was developed to replace optocoupled gate drivers in high-efficiency power conversion systems, delivering higher reliability, tighter timing, and superior transient immunity for SiC/GaN-based inverters and motor drives.

FAQ

What is the maximum operating temperature range for SI8275AB-IMR?

The SI8275AB-IMR is rated for operation from –40 °C to +125 °C ambient temperature. This specification applies to all standard-orderable parts and is validated per AEC-Q100 stress testing. The device maintains full performance across this range, including guaranteed 60 ns max propagation delay and 4 A peak output current, making it suitable for under-hood automotive and enclosed industrial environments where thermal management is constrained.

Does SI8275AB-IMR support independent power supplies for each output channel?

Yes, SI8275AB-IMR supports fully independent driver-side power supplies: VDDA powers channel A (VOA), and VDDB powers channel B (VOB). Each has its own UVLO monitor and operates over 4.2–30 V. This allows asymmetric rail configurations - for example, 15 V for high-side and 12 V for low-side - and prevents single-point failure from disabling both outputs, enhancing system robustness in critical power conversion stages.

How does the enable pin (EN) function in SI8275AB-IMR?

The EN pin on SI8275AB-IMR is an active-high control that unconditionally forces both VOA and VOB low when pulled low, regardless of VIA/VIB states. Device operation resumes within tRESTART (typically <1 µs) after EN returns high. If VDDI is below UVLO, EN has no effect - outputs remain low until input supply stabilizes. This behavior enables safe, synchronized shutdown across dual channels during fault conditions or system reset sequences.

What isolation certifications apply to SI8275AB-IMR?

SI8275AB-IMR carries UL 1577 recognition (2500 VRMS for one minute), CSA 62368-1 (basic insulation), VDE 60747-17 (basic insulation), and CQC GB4943.1 (basic insulation). These certifications confirm compliance with international safety standards for reinforced isolation in end equipment. All ratings are based on the device's 2.5 kVRMS withstand voltage and validated creepage/clearance in the SOIC-16 package.

Can SI8275AB-IMR drive SiC or GaN FETs directly?

Yes, SI8275AB-IMR is explicitly designed for direct drive of SiC and GaN FETs. Its 4 A peak output current, 60 ns max propagation delay, 200 ps p-p jitter, and separate pull-up/pull-down outputs enable precise control of fast-switching wide-bandgap devices. The 200 kV/µs CMTI rating ensures immunity to the extreme dV/dt transients typical in >100 kHz SiC inverters, and the –40 °C to +125 °C rating supports operation in thermally demanding GaN-based power supplies.