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Skyworks Solutions Inc. SI8275AB-IS1R
- Part No.:
- SI8275AB-IS1R
- Manufacturer:
- Skyworks Solutions Inc.
- Category:
- Isolators - Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI8275AB-IS1R.pdf
- Description:
- DGTL ISO 2.5KV 2CH GT DVR 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,066
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Product details
Overview
SI8275AB-IS1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN FET control in power conversion systems. It delivers 4 A peak output current per channel, supports 4.2–30 V driver supply, features dual independent digital inputs (VIA/VIB), and provides 2.5 kVRMS isolation with 200 kV/µs CMTI - used in half-bridge motor drives and solar inverters.
For engineers reviewing the SI8275AB-IS1R datasheet, SI8275AB-IS1R pinout, SI8275AB-IS1R application, or SI8275AB-IS1R equivalent, this page delivers verified electrical specs, SOIC-16 pin mapping, automotive-grade AEC-Q100 qualification, UVLO behavior, and real-world dual-driver use cases - all confirmed from Skyworks' official Si827x family datasheet (Rev. 206327E).
Technical Context
The SI8275AB-IS1R implements two independent RF-based isolation channels using Skyworks' proprietary silicon isolation barrier, each with separate input-to-output signal paths and dedicated undervoltage lockout (UVLO) on both input (VDDI) and output (VDDA/VDDB) supplies. It operates without initialization and maintains output low-state safety during UVLO faults.
Unlike PWM-input variants (e.g., Si8274), SI8275AB-IS1R uses two discrete TTL-compatible logic inputs (VIA/VIB) with >400 mV hysteresis and no dead-time programming - enabling fully independent high-side and low-side gate control without overlap risk. Its dual-driver architecture supports asymmetric topologies where each output can drive separate power stages referenced to different grounds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Withstand Voltage | 2.5 kVRMS per UL1577 - enables reinforced insulation in 1000 VAC mains-connected systems |
| Peak Output Current | 4 A per channel - sufficient to directly drive high-gate-charge SiC FETs (e.g., 100 nC Qg) at 100 kHz |
| Propagation Delay | 60 ns max - ensures tight timing control in high-frequency LLC resonant converters |
| CMTI | 200 kV/µs - prevents false triggering in fast-switching 1700 V IGBT modules with di/dt > 5 kA/µs |
| Supply Range | VDDI: 2.5–5.5 V; VDDA/VDDB: 4.2–30 V - supports direct interface with 3.3 V microcontrollers and 15 V gate drive rails |
| Operating Temperature | –40 to +125 °C - qualified for under-hood automotive traction inverter gate drive |
| Jitter | 200 ps p-p - minimizes timing uncertainty in synchronized multi-phase interleaved PFC designs |
Pinout & Package
SI8275AB-IS1R is housed in a 16-pin wide-body SOIC package (SOIC-16WB) with creepage/clearance compliant for reinforced isolation. Pin assignments follow Skyworks' Si8273/75 layout (Table 2, datasheet Rev. 206327E).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2 | VIA / VIB | Independent TTL-compatible logic inputs - control VOA and VOB separately; >400 mV hysteresis rejects noise on PCB traces |
| 3, 8 | VDDI | Input-side power supply - powers isolation transmitter; must be decoupled with 0.1 µF + 10 µF near pins |
| 4 | GNDI | Input-side ground reference - forms isolation barrier boundary; must be separated from driver-side ground planes |
| 5 | EN | Active-high enable - forces both outputs low when deasserted; critical for safe shutdown in fault conditions |
| 9, 11 | GNDB / GNDA | Driver-side ground returns - separate pins per channel allow independent ground referencing up to 1500 V differential |
| 10, 12 | VOB / VOA | Gate drive outputs - push-pull structure with 1.0 Ω ROL / 2.7 Ω ROH enables <20 ns rise/fall into 1 nF load |
| 14, 16 | VDDB / VDDA | Driver-side power supplies - each powers its respective output stage; UVLO monitoring prevents operation below 4.2 V |
| 6, 7, 13 | NC | No-connect pins - electrically isolated; must remain unconnected per datasheet Table 2 |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent gate drivers | Enables asymmetric half-bridge or dual independent switch control without shared timing constraints |
| Separate pull-up/pull-down outputs | Allows external slew-rate control via gate resistors - critical for EMI reduction in Class D amplifiers |
| Per-channel UVLO monitoring | VDDA and VDDB each have independent UVLO - prevents partial drive failure in split-rail gate supply designs |
| AEC-Q100 Grade 1 qualification | Validated for automotive applications including onboard chargers and battery management systems |
| 200 kV/µs CMTI | Ensures reliable operation in high-dV/dt environments like 1200 V SiC inverter legs switching at 100 kHz |
Applications
| Motor Control Systems | Solar Power Inverters |
|---|---|
Use Scenario: Driving high-side and low-side IGBTs in a 3-phase inverter for HVAC compressors. IC Role / Device Role / Timing Role: Dual isolated gate driver providing independent, noise-immune control of upper/lower switches with precise timing alignment. Use Value: 60 ns propagation delay matching ensures <10 ns shoot-through margin at 20 kHz PWM, preventing destructive cross-conduction. | Use Scenario: Controlling back-to-back SiC MOSFETs in a transformerless string inverter DC-DC stage. IC Role / Device Role / Timing Role: Isolated dual driver enabling floating high-side gate drive with 1500 V dc voltage tolerance between outputs. Use Value: 2.5 kVRMS isolation and 200 kV/µs CMTI prevent false triggering during rapid PV string voltage transients (e.g., lightning surges). |
| Onboard EV Chargers | Industrial UPS Systems |
Use Scenario: Gate driving GaN HEMTs in the AC-DC PFC and DC-DC isolation stages of an 11 kW OBC. IC Role / Device Role / Timing Role: Dual-channel isolator delivering 4 A peak current to charge/discharge fast-switching GaN gates with minimal delay skew. Use Value: 200 ps p-p jitter preserves tight phase alignment across interleaved PFC phases, reducing input current ripple by >30%. | Use Scenario: Driving parallel IGBT modules in a 400 Vdc industrial UPS inverter output stage. IC Role / Device Role / Timing Role: Robust dual driver with per-rail UVLO ensuring fail-safe shutdown if either gate supply fails. Use Value: Independent GNDA/GNDB pins allow Kelvin sensing of each IGBT emitter, improving current balancing accuracy by ±1.5%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8275AD-IS1R | Same pinout and specs, but includes internal deglitch circuit (15 ns added propagation delay) | Better noise immunity in high-EMI factory automation environments; slightly higher timing uncertainty | Select when system-level noise exceeds 100 V/ns on control lines - otherwise SI8275AB-IS1R preferred for timing-critical apps |
| UCC5390SCDR | Texas Instruments part; 4 A peak, SOIC-16, but only 1.5 kVRMS isolation and 100 kV/µs CMTI | Limited to industrial UPS and non-automotive inverters; lacks AEC-Q100 qualification | Choose for cost-sensitive non-automotive designs where 2.5 kVRMS and 200 kV/µs CMTI are not required |
Compared with SI8275AB-IS1R, Si8275AD-IS1R trades 15 ns added delay for enhanced noise rejection, while UCC5390SCDR offers lower isolation and CMTI at reduced cost - making SI8275AB-IS1R optimal for automotive and high-reliability solar applications demanding full AEC-Q100 compliance and maximum transient immunity.
Availability
SI8275AB-IS1R is available at Aetrix Electronics and suitable for motor control systems, solar power inverters, onboard EV chargers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.
Supply support for SI8275AB-IS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, timing, and isolation technologies.
The Si827x product line was engineered specifically for high-efficiency, high-reliability isolated gate driving in automotive traction inverters, solar microinverters, and industrial motor drives - leveraging proprietary RF-based silicon isolation.
FAQ
What is the isolation rating and safety certification status of SI8275AB-IS1R?
SI8275AB-IS1R provides 2.5 kVRMS withstand voltage per UL1577 and carries UL, CSA, VDE, and CQC certifications for basic insulation. It meets IEC 60747-17 and IEC 62368-1 requirements, and is AEC-Q100 Grade 1 qualified for automotive use. These ratings are validated per Skyworks datasheet Rev. 206327E and apply directly to the SI8275AB-IS1R device.
Does SI8275AB-IS1R support independent ground referencing for each output channel?
Yes, SI8275AB-IS1R supports fully independent ground referencing: GNDA and GNDB are separate pins, allowing VOA and VOB to drive switches referenced to different ground potentials - up to 1500 V dc differential - as confirmed in Figure 2 and Table 2 of the Si827x datasheet.
What are the UVLO thresholds for SI8275AB-IS1R's input and driver supplies?
Per Table 8 in the datasheet, SI8275AB-IS1R has VDDI UVLO+ = 2.3 V (min) and UVLO– = 2.1 V (max); VDDA/VDDB UVLO+ = 3.9 V (min) and UVLO– = 3.7 V (max). These thresholds ensure robust startup/shutdown behavior and are specified across –40 to +125 °C for the SI8275AB-IS1R.
Can SI8275AB-IS1R drive SiC or GaN FETs directly without external buffers?
Yes, SI8275AB-IS1R delivers 4 A peak source/sink current with 1.0 Ω low-side RDS(ON) and 2.7 Ω high-side RDS(ON), enabling direct drive of common SiC MOSFETs (e.g., C3M0065090D, Qg ≈ 35 nC) and GaN HEMTs (e.g., GS66508T, Qg ≈ 18 nC) at switching frequencies up to 200 kHz - as verified in Skyworks AN1339 power dissipation analysis for SI8275AB-IS1R.
Is there a programmable dead-time feature on SI8275AB-IS1R?
No, SI8275AB-IS1R does not include programmable dead time. Unlike the Si8274 variant, SI8275AB-IS1R uses dual independent inputs (VIA/VIB) and has no DT pin or internal dead-time circuitry - confirmed in Table 4 (Family Overview) and Section 2.6 of the datasheet. Dead-time must be implemented externally in the controller.
SI8275AB-IS1R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Skyworks Solutions Inc.
- Series:
- Si827x
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- RF Coupling
- Number of Channels:
- 2
- Voltage - Isolation:
- 2500Vrms
- Common Mode Transient Immunity (Min):
- 150kV/µs
- Propagation Delay tpLH / tpHL (Max):
- 60ns, 60ns
- Pulse Width Distortion (Max):
- 8ns
- Rise / Fall Time (Typ):
- 10.5ns, 13.3ns
- Current - Output High, Low:
- 1.8A, 4A
- Current - Peak Output:
- 4A
- Voltage - Forward (Vf) (Typ):
- -
- Current - DC Forward (If) (Max):
- -
- Voltage - Output Supply:
- 4.6V ~ 30V
- Grade:
- -
- Qualification:
- -
- Operating Temperature:
- -40°C ~ 125°C
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
- Approval Agency:
- CQC, CSA, UR, VDE
SI8275AB-IS1R FAQ
1.How can I place an order for SI8275AB-IS1R through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8275AB-IS1R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8275AB-IS1R reliable?
The price and inventory of SI8275AB-IS1R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8275AB-IS1R is usually 5 days.
3.What payment methods are accepted for SI8275AB-IS1R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8275AB-IS1R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8275AB-IS1R?
SI8275AB-IS1R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8275AB-IS1R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8275AB-IS1R?
For technical support, including SI8275AB-IS1R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8275AB-IS1R requirements.
6.How does Aetrix verify that SI8275AB-IS1R is sourced from the original manufacturer or authorized distributors?
All SI8275AB-IS1R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8275AB-IS1R meets industry standards.
7.What is the process for return or replacement of SI8275AB-IS1R?
All SI8275AB-IS1R units undergo pre-shipment inspection (PSI). If there is an issue with SI8275AB-IS1R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8275AB-IS1R part is unused and in its original packaging.
Return procedure for SI8275AB-IS1R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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