Skyworks Solutions Inc. SI8275BBD-AS1R

Overview

SI8275BBD-AS1R from Skyworks Solutions is a dual-channel isolated gate driver IC designed for high-reliability MOSFET/IGBT/SiC/GaN FET drive in half-bridge and dual-switch topologies. It delivers 4 A peak output current per channel, supports 4.2–30 V driver supply, features 60 ns max propagation delay, 200 kV/µs CMTI, and operates across –40 to +125 °C. It is used in solar inverters, traction inverters, and onboard chargers where robust isolation and precise timing are critical.

For engineers reviewing the SI8275BBD-AS1R datasheet, SI8275BBD-AS1R pinout, SI8275BBD-AS1R application, or SI8275BBD-AS1R equivalent, this page provides verified technical context, validated pin functions, confirmed dual-driver operation without overlap protection, real-world automotive-grade qualification (AEC-Q100), and direct alternative part comparisons - all grounded in Skyworks' official Si827x family documentation.

Technical Context

The SI8275BBD-AS1R implements two independent isolated gate driver channels using Skyworks' proprietary RF-based silicon isolation barrier, delivering 2.5 kVRMS withstand voltage per UL1577. Each channel has separate input (VIA/VIB), output (VOA/VOB), and supply rails (VDDA/VDDB, GNDA/GNDB), enabling operation with split or floating grounds.

It lacks programmable dead time and overlap protection - unlike Si8273/Si8274 - and operates as a true dual driver: both outputs respond directly and independently to their respective inputs, with no internal cross-coupling or state arbitration. UVLO monitoring is implemented separately on VDDI, VDDA, and VDDB.

Key Specifications

Pinout & Package

SI8275BBD-AS1R is housed in a 16-pin SOIC package with creepage/clearance optimized for reinforced isolation. Pin assignments follow the Si8275 configuration: dual independent inputs (VIA, VIB), dual isolated outputs (VOA, VOB), dedicated supplies per side (VDDI, VDDA, VDDB), and separate grounds (GNDI, GNDA, GNDB).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual isolated gate driver applications.

Compared with SI8275BBD-AS1R, Si8275BD-AS1R offers identical performance with minor packaging differentiation, while UCC5390SCD trades automotive qualification and superior noise immunity for lower system-level BOM cost - making SI8275BBD-AS1R the preferred choice for ISO 26262-aligned traction and charging systems.

Availability

SI8275BBD-AS1R is available at Aetrix Electronics and suitable for solar power inverters, EV traction systems, and onboard chargers requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.

Supply support for SI8275BBD-AS1R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Skyworks Solutions is a global semiconductor company specializing in analog and mixed-signal connectivity solutions, with leadership in RF, isolation, and precision timing technologies.

The Si827x product line was engineered specifically for high-reliability isolated gate driving in automotive and industrial power conversion, emphasizing dV/dt immunity, timing accuracy, and AEC-Q100 compliance from wafer to final test.

FAQ

What is the isolation rating of the SI8275BBD-AS1R?

The SI8275BBD-AS1R provides 2.5 kVRMS withstand voltage per UL1577 for one minute, achieved via Skyworks' proprietary silicon RF isolation technology. This rating applies across the full operating temperature range (–40 to +125 °C) and supports reinforced insulation in systems with up to 1000 V DC bus voltages. The isolation barrier is certified to VDE 60747-17 (basic insulation) and CSA 62368-1.

Does the SI8275BBD-AS1R support programmable dead time?

No, the SI8275BBD-AS1R does not support programmable dead time. Unlike the Si8274 variant, it implements dual independent driver channels with no internal overlap protection or DT pin. Dead time must be generated externally by the controller. This architecture allows full flexibility in timing relationships between VOA and VOB, including simultaneous switching or arbitrary phase offsets.

What is the function of the EN pin on the SI8275BBD-AS1R?

The EN (Enable) pin on the SI8275BBD-AS1R is an active-high control that globally disables both output channels: when pulled low, VOA and VOB are forced low regardless of VIA/VIB states. The device resumes normal operation within tRESTART (typ. 1 µs) after EN returns high - but only if VDDI is above its UVLO threshold. If VDDI is unpowered or in UVLO, EN has no effect.

Can SI8275BBD-AS1R drive SiC or GaN FETs?

Yes, the SI8275BBD-AS1R is explicitly designed for SiC and GaN FET gate drive. Its 4 A peak output current, 2.7 Ω high-side RDS(ON) and 1.0 Ω low-side RDS(ON), sub-60 ns propagation delay, and 200 kV/µs CMTI meet the demanding switching speed, gate charge, and noise immunity requirements of modern wide-bandgap power devices in applications like EV chargers and solar inverters.

How does UVLO work on the SI8275BBD-AS1R?

The SI8275BBD-AS1R implements independent UVLO circuits on VDDI, VDDA, and VDDB. If VDDI falls below its UVLO threshold (VDDIUV–), both outputs go low and remain low until VDDI rises above VDDIUV+. Similarly, if VDDA drops below VDDAUV–, VOA is forced low independently - VOB remains unaffected. This per-rail monitoring ensures fail-safe behavior even during partial power loss.